nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A BCCD-based dosimeter for mixed radiation fields
|
Pierschel, M. |
|
1993 |
326 |
1-2 |
p. 304-309 6 p. |
artikel |
2 |
About the precision of time and amplitude measurements in drift detectors
|
Gatti, E. |
|
1993 |
326 |
1-2 |
p. 279-283 5 p. |
artikel |
3 |
A calibration bench for electro-optical characterization of CCD sensors
|
Stalio, R. |
|
1993 |
326 |
1-2 |
p. 150-153 4 p. |
artikel |
4 |
A cryogenic detector with simultaneous phonon and ionization measurement for background rejection
|
Shutt, T. |
|
1993 |
326 |
1-2 |
p. 166-171 6 p. |
artikel |
5 |
A fast low noise silicon detector for electron spectroscopy up to 1 MeV
|
Evensen, Lars |
|
1993 |
326 |
1-2 |
p. 136-143 8 p. |
artikel |
6 |
A 66 MHz, 32-channel analog memory circuit with data selection for fast silicon detectors
|
Munday, D. |
|
1993 |
326 |
1-2 |
p. 100-111 12 p. |
artikel |
7 |
An exploration of GaAs structures for solid-state detectors
|
Chmill, V.B. |
|
1993 |
326 |
1-2 |
p. 310-312 3 p. |
artikel |
8 |
Anodic oxidation as a method for low temperature passivation of silicon radiation detectors
|
Mende, G. |
|
1993 |
326 |
1-2 |
p. 16-20 5 p. |
artikel |
9 |
A novel charge sensitive preamplifier without the feedback resistor
|
Bertuccio, Giuseppe |
|
1993 |
326 |
1-2 |
p. 71-76 6 p. |
artikel |
10 |
A novel readout chip for silicon strip detectors with analog pipeline and digitally controlled analog signal processing
|
Horisberger, R. |
|
1993 |
326 |
1-2 |
p. 92-99 8 p. |
artikel |
11 |
A novel technique for fast pulse-shaping using a slow amplifier at LHC
|
Bingefors, N. |
|
1993 |
326 |
1-2 |
p. 112-119 8 p. |
artikel |
12 |
Application of wet chemical selective etch techniques to the fabrication of thin silicon detectors
|
Schmidt, B. |
|
1993 |
326 |
1-2 |
p. 21-26 6 p. |
artikel |
13 |
A study on the interstrip capacitance of double-sided silicon strip detectors
|
Yamamoto, K. |
|
1993 |
326 |
1-2 |
p. 222-227 6 p. |
artikel |
14 |
Basic characters of silicon strip detectors with double layer aluminum electrodes
|
Saito, K. |
|
1993 |
326 |
1-2 |
p. 204-208 5 p. |
artikel |
15 |
Beam test of a large area silicon drift detector
|
Vacchi, A. |
|
1993 |
326 |
1-2 |
p. 267-272 6 p. |
artikel |
16 |
Breakdown protection and long-term stabilisation for Si-detectors
|
Bischoff, A. |
|
1993 |
326 |
1-2 |
p. 27-37 11 p. |
artikel |
17 |
Calculation of the geometrical capacitance of silicon microstrip structures using a variational approach
|
Hall, G. |
|
1993 |
326 |
1-2 |
p. 228-233 6 p. |
artikel |
18 |
Characterization of high resistivity detector diodes by forward bias measurements
|
Misiakos, K. |
|
1993 |
326 |
1-2 |
p. 38-41 4 p. |
artikel |
19 |
Characterization of silicon during the fabrication of nuclear detectors by the planar process
|
Fontaine, J.Ch. |
|
1993 |
326 |
1-2 |
p. 10-15 6 p. |
artikel |
20 |
Charge transport properties of undoped SI LEC GaAs solid-state detectors
|
Beaumont, S.P. |
|
1993 |
326 |
1-2 |
p. 313-318 6 p. |
artikel |
21 |
Concepts for simplification of strip detector design and production
|
Kemmer, Josef |
|
1993 |
326 |
1-2 |
p. 209-213 5 p. |
artikel |
22 |
Defect complexes in neutron irradiated silicon detectors: evaluation and effects
|
Bruzzi, M. |
|
1993 |
326 |
1-2 |
p. 344-349 6 p. |
artikel |
23 |
Design and tests for CLEO-II silicon vertex detector
|
Alexander, J.P. |
|
1993 |
326 |
1-2 |
p. 243-250 8 p. |
artikel |
24 |
Diffusion-based silicon nuclear radiation detectors with on-chip readout circuitry
|
Wouters, S.E. |
|
1993 |
326 |
1-2 |
p. 299-303 5 p. |
artikel |
25 |
Editorial
|
|
|
1993 |
326 |
1-2 |
p. vii- 1 p. |
artikel |
26 |
Editorial Board
|
|
|
1993 |
326 |
1-2 |
p. iv- 1 p. |
artikel |
27 |
First beam test results from a monolithic silicon pixel detector
|
Snoeys, Walter |
|
1993 |
326 |
1-2 |
p. 144-149 6 p. |
artikel |
28 |
First results with the pn-CCD detector system for the XMM satellite mission
|
Bräuninger, H. |
|
1993 |
326 |
1-2 |
p. 129-135 7 p. |
artikel |
29 |
Gettering and defect engineering for a low noise CCD compatible 1.5 μm BICMOS technology
|
Ritter, G. |
|
1993 |
326 |
1-2 |
p. 3-9 7 p. |
artikel |
30 |
High resolution X-ray spectroscopy with superconducting tunnel junctions
|
Kraus, H. |
|
1993 |
326 |
1-2 |
p. 172-179 8 p. |
artikel |
31 |
Limits of resolution of charge sensitive detector systems
|
Kandiah, K. |
|
1993 |
326 |
1-2 |
p. 49-62 14 p. |
artikel |
32 |
List of participants
|
|
|
1993 |
326 |
1-2 |
p. ix-x nvt p. |
artikel |
33 |
Measurement of the spatial resolution of double-sided double-metal AC-coupled silicon microstrips detectors
|
Brenner, R. |
|
1993 |
326 |
1-2 |
p. 189-197 9 p. |
artikel |
34 |
Monolithic preamplifier employing epitaxial n-channel JFETS
|
Radeka, V. |
|
1993 |
326 |
1-2 |
p. 77-81 5 p. |
artikel |
35 |
Neutron irradiation of silicon diodes at temperatures of +20°C and −20°C
|
Anghinolfi, F. |
|
1993 |
326 |
1-2 |
p. 365-372 8 p. |
artikel |
36 |
New DEPMOS applications
|
Lechner, P. |
|
1993 |
326 |
1-2 |
p. 284-289 6 p. |
artikel |
37 |
Operational characteristics of an electron-bombarded silicon-diode photomultiplier tube
|
Johansen, G.A. |
|
1993 |
326 |
1-2 |
p. 295-298 4 p. |
artikel |
38 |
Operational experience with a large detector system using silicon strip detectors with double sided readout
|
Batignani, G. |
|
1993 |
326 |
1-2 |
p. 183-188 6 p. |
artikel |
39 |
Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors
|
Laakso, M. |
|
1993 |
326 |
1-2 |
p. 214-221 8 p. |
artikel |
40 |
Performance of a liquid xenon calorimeter cell
|
Braem, A. |
|
1993 |
326 |
1-2 |
p. 325-331 7 p. |
artikel |
41 |
Performance of the multianode cylindrical silicon drift detector in the CERES NA45 experiment: first results
|
Chen, W. |
|
1993 |
326 |
1-2 |
p. 273-278 6 p. |
artikel |
42 |
Pulse shapes of silicon strip detectors as a diagnostic tool
|
Gadomski, S. |
|
1993 |
326 |
1-2 |
p. 239-242 4 p. |
artikel |
43 |
Radiation damage in detector-amplifier structures capable of signal storage
|
Beha, T. |
|
1993 |
326 |
1-2 |
p. 386-389 4 p. |
artikel |
44 |
Radiation effects on ac-coupled microstrip silicon detectors
|
Bacchetta, N. |
|
1993 |
326 |
1-2 |
p. 381-385 5 p. |
artikel |
45 |
Radiation hardness of silicon detectors for future colliders
|
Fretwurst, E. |
|
1993 |
326 |
1-2 |
p. 357-364 8 p. |
artikel |
46 |
Recent advances in the detection of optical photons with silicon photodiodes
|
Lacaita, A. |
|
1993 |
326 |
1-2 |
p. 290-294 5 p. |
artikel |
47 |
Results from double-sided silicon microstrip detector with field plate separation
|
Brenner, R. |
|
1993 |
326 |
1-2 |
p. 198-203 6 p. |
artikel |
48 |
Short channel, CMOS-compatible JFET in low noise applications
|
Buttler, W. |
|
1993 |
326 |
1-2 |
p. 63-70 8 p. |
artikel |
49 |
Silicon strip front-end using a low-noise analog CMOS process
|
Dabrowski, Wladyslaw |
|
1993 |
326 |
1-2 |
p. 82-84 3 p. |
artikel |
50 |
Strip detector for short-range particles
|
Rosenfeld, A.B. |
|
1993 |
326 |
1-2 |
p. 234-238 5 p. |
artikel |
51 |
Study of the position-sensitive detection of X-rays with a silicon drift chamber
|
Schooneveld, E.M. |
|
1993 |
326 |
1-2 |
p. 263-266 4 p. |
artikel |
52 |
Temperature effects on radiation damage to silicon detectors
|
Barberis, E. |
|
1993 |
326 |
1-2 |
p. 373-380 8 p. |
artikel |
53 |
The effect of bulk traps in proton irradiated EEV CCDs
|
Holland, A.D. |
|
1993 |
326 |
1-2 |
p. 335-343 9 p. |
artikel |
54 |
The influence of preamorphization on the properties of shallow p+ n-junctions in silicon radiation detectors
|
von Borany, J. |
|
1993 |
326 |
1-2 |
p. 42-46 5 p. |
artikel |
55 |
The pn-CCD on-chip electronics
|
Pinotti, E. |
|
1993 |
326 |
1-2 |
p. 85-91 7 p. |
artikel |
56 |
Thermal calorimeters for high resolution X-ray spectroscopy
|
McCammon, D. |
|
1993 |
326 |
1-2 |
p. 157-165 9 p. |
artikel |
57 |
The study of the possibility to use CAMEX chips in collider experiments with short bunch crossing time
|
Aulchenko, V.M. |
|
1993 |
326 |
1-2 |
p. 120-125 6 p. |
artikel |
58 |
The use of the signal current pulse shape to study the internal electric field profile and trapping effects in neutron damaged silicon detectors
|
Kraner, H.W. |
|
1993 |
326 |
1-2 |
p. 350-356 7 p. |
artikel |
59 |
Three-dimensional simulation of semiconductor devices: state of the art and prospects
|
Baccarani, G. |
|
1993 |
326 |
1-2 |
p. 253-259 7 p. |
artikel |
60 |
Timing response of CdTe detectors
|
Baldazzi, G. |
|
1993 |
326 |
1-2 |
p. 319-324 6 p. |
artikel |