| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Algorithms for the rapid simulation of Rutherford backscattering spectra
|
Doolittle, Lawrence R.
|
|
1985
|
9 |
3 |
p. 344-351
8 p.
|
artikel
|
| 2 |
Analysis of porous silicon
|
Earwaker, L.G.
|
|
1985
|
9 |
3 |
p. 317-320
4 p.
|
artikel
|
| 3 |
Bulk analysis of LPCVD material by RBS
|
Fou, C.M.
|
|
1985
|
9 |
3 |
p. 325-328
4 p.
|
artikel
|
| 4 |
Calendar
|
|
|
1985
|
9 |
3 |
p. 355-357
3 p.
|
artikel
|
| 5 |
Coating of pellet pressing tool with 12C by ion beam deposition
|
Anttila, A.
|
|
1985
|
9 |
3 |
p. 352-353
2 p.
|
artikel
|
| 6 |
Computer analysis of random and channeled backscattering spectra
|
Kido, Yoshiaki
|
|
1985
|
9 |
3 |
p. 291-300
10 p.
|
artikel
|
| 7 |
Determination of Si/Al ratios in zeolites by proton inelastic scattering
|
Hanson, A.L.
|
|
1985
|
9 |
3 |
p. 301-305
5 p.
|
artikel
|
| 8 |
Erratum
|
|
|
1985
|
9 |
3 |
p. 354-
1 p.
|
artikel
|
| 9 |
Exposure evaluation of dosimetric films by PIXE
|
Hadjiantoniou, A.
|
|
1985
|
9 |
3 |
p. 306-310
5 p.
|
artikel
|
| 10 |
Laser sputtering
|
Kelly, Roger
|
|
1985
|
9 |
3 |
p. 329-340
12 p.
|
artikel
|
| 11 |
Low energy ion scattering study of oxygen adsorption on a Cu{100} single crystal surface
|
Hupkens, Th.M.
|
|
1985
|
9 |
3 |
p. 285-290
6 p.
|
artikel
|
| 12 |
Low energy ion scattering study of oxygen adsorption on a Cu{100} single crystal surface
|
Hupkens, Th.M.
|
|
1985
|
9 |
3 |
p. 277-284
8 p.
|
artikel
|
| 13 |
MeV ion recoil techniques in research and technology
|
Conlon, T.W.
|
|
1985
|
9 |
3 |
p. 311-315
5 p.
|
artikel
|
| 14 |
Oxygen detection by non-Rutherford proton backscattering below 2.5 MeV
|
Luomajärvi, M.
|
|
1985
|
9 |
3 |
p. 255-258
4 p.
|
artikel
|
| 15 |
Reemission measurements of surface recombination for deuterium on nickel
|
Presinger, D.
|
|
1985
|
9 |
3 |
p. 270-276
7 p.
|
artikel
|
| 16 |
Scope of NIM B
|
|
|
1985
|
9 |
3 |
p. 358-
1 p.
|
artikel
|
| 17 |
Secondary electron emission from the entrance and exit surfaces of thin carbon foils under fast ion bombardment
|
Shi, C.R.
|
|
1985
|
9 |
3 |
p. 263-269
7 p.
|
artikel
|
| 18 |
Stopping cross sections of He+ ions in bismuth
|
Kuldeep,
|
|
1985
|
9 |
3 |
p. 259-262
4 p.
|
artikel
|
| 19 |
The suppression of residual defects in silicon implanted with arsenic by rapid isothermal annealing
|
Hasenack, C.M.
|
|
1985
|
9 |
3 |
p. 341-343
3 p.
|
artikel
|
| 20 |
Use of the 16O(d, α0)14N nuclear reaction in the analysis of oxide films
|
Simpson, J.C.B.
|
|
1985
|
9 |
3 |
p. 321-324
4 p.
|
artikel
|
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