nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Absolute calibration of the 16O(α,α)16O elastic scattering resonance at 7.30–7.65 MeV and applications to oxygen depth profiling
|
Almeida, F.J.D. |
|
1993 |
82 |
3 |
p. 393-398 6 p. |
artikel |
2 |
A mechanism of ion bombardment induced ripple topography
|
Protsenko, A.N. |
|
1993 |
82 |
3 |
p. 417-420 4 p. |
artikel |
3 |
A new method to calculate the characteristics of radiation and pair production under high energies and arbitrary angles of particle incidence relative to the crystal planes
|
Tikhomirov, V.V. |
|
1993 |
82 |
3 |
p. 409-416 8 p. |
artikel |
4 |
A new parameter in the electrochemical etching of polymer track detectors
|
Sohrabi, M. |
|
1993 |
82 |
3 |
p. 442-446 5 p. |
artikel |
5 |
Calendar
|
|
|
1993 |
82 |
3 |
p. 489-491 3 p. |
artikel |
6 |
Irradiation induced texture of Ag and Fe grains in Ag/Fe multilayers
|
Liu, B.X. |
|
1993 |
82 |
3 |
p. 435-441 7 p. |
artikel |
7 |
Multiple scattering and inelasticity distortions in neutron scattering from an infinite plane slab
|
Dawidowski, J. |
|
1993 |
82 |
3 |
p. 459-464 6 p. |
artikel |
8 |
Nuclear microprobe analysis of 14N and 15N in soybean leaves
|
Massiot, P. |
|
1993 |
82 |
3 |
p. 465-473 9 p. |
artikel |
9 |
On 10Be standards and the half-life of 10Be
|
Middleton, Roy |
|
1993 |
82 |
3 |
p. 399-403 5 p. |
artikel |
10 |
On the effect of beam spatial broadening in ion microtomography (IMT) image quality
|
Bench, G.S. |
|
1993 |
82 |
3 |
p. 447-458 12 p. |
artikel |
11 |
Penetration of high energy ions in semiconductors through tracks: simulation with transport equations
|
Zaitsev, A.M. |
|
1993 |
82 |
3 |
p. 421-430 10 p. |
artikel |
12 |
Precise determination of H recoil cross sections for 1.5–3.0 MeV He ions
|
Kido, Y. |
|
1993 |
82 |
3 |
p. 474-480 7 p. |
artikel |
13 |
Single electron capture in He+ on SF6, collisions at low keV energies
|
Martínez, H. |
|
1993 |
82 |
3 |
p. 389-392 4 p. |
artikel |
14 |
Spatial localization of the buried ion-beam synthesized layer of silicon dioxide inclusions in silicon
|
Danilin, A.B. |
|
1993 |
82 |
3 |
p. 431-434 4 p. |
artikel |
15 |
Systematics of scaling of heavy ion blocking in thin silicon crystals
|
Nanal, Vandana |
|
1993 |
82 |
3 |
p. 404-408 5 p. |
artikel |
16 |
X-ray beam profile measurements with CCD detectors
|
Attaelmanan, A. |
|
1993 |
82 |
3 |
p. 481-488 8 p. |
artikel |