| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlN crystal growth in AlN0.8 thin films induced by Ne-bombardment
|
Kobayashi, K.
|
|
1992
|
65 |
1-4 |
p. 311-314
|
artikel
|
| 2 |
Amorphization and recrystallization of Hf-implanted LiNbO3
|
Rebouta, L.
|
|
1992
|
65 |
1-4 |
p. 256-259
|
artikel
|
| 3 |
Amorphization in Gd2Ti2O7 and CaZrTi2O7 irradiated with 3 MeV argon ions
|
Weber, W.J.
|
|
1992
|
65 |
1-4 |
p. 102-106
|
artikel
|
| 4 |
Amorphization of zirconolite: alpha-decay event damage versus krypton ion irradiation
|
Ewing, R.C.
|
|
1992
|
65 |
1-4 |
p. 319-323
|
artikel
|
| 5 |
Analytical methods for investigation of ion-implanted polymer layers
|
Leontyev, A.V.
|
|
1992
|
65 |
1-4 |
p. 438-441
|
artikel
|
| 6 |
An investigation of the structure of the F-band and envelope in LiF
|
Wood, R.A.
|
|
1992
|
65 |
1-4 |
p. 502-506
|
artikel
|
| 7 |
Application of nonequilibrium phase transition to heteropolytype structure creation
|
Pezoldt, J.
|
|
1992
|
65 |
1-4 |
p. 361-365
|
artikel
|
| 8 |
A Rutherford backscattering study of Ar- and Xe-implanted silicon carbide
|
Föhl, A.
|
|
1992
|
65 |
1-4 |
p. 335-340
|
artikel
|
| 9 |
A thin film technique applied to detect striking contrast of chemical reaction of recoil-implanted atoms to hot atom reaction inside solid systems
|
Miyakawa, A.
|
|
1992
|
65 |
1-4 |
p. 452-455
|
artikel
|
| 10 |
Author index
|
|
|
1992
|
65 |
1-4 |
p. 577-584
|
artikel
|
| 11 |
Bombardment-induced compositional change in MgAl2O4, MgO and A12O3
|
Marietta, Giovanni
|
|
1992
|
65 |
1-4 |
p. 97-101
|
artikel
|
| 12 |
Buried insulator layer formation by N+ implantation
|
Gerasimenko, N.N.
|
|
1992
|
65 |
1-4 |
p. 73-78
|
artikel
|
| 13 |
Cathodoluminescence spectra of pure LiF
|
Yang, B.
|
|
1992
|
65 |
1-4 |
p. 497-501
|
artikel
|
| 14 |
Charge states in electron irradiated low nitrided silicondioxide films
|
Rank, V.
|
|
1992
|
65 |
1-4 |
p. 232-237
|
artikel
|
| 15 |
Conferance photograph
|
|
|
1992
|
65 |
1-4 |
p. viii
|
artikel
|
| 16 |
Damage and aluminum distributions in sic during ion implantation and annealing
|
Chechenin, N.G.
|
|
1992
|
65 |
1-4 |
p. 341-344
|
artikel
|
| 17 |
Damage profiles in MgO after ion implantation
|
Friedland, E.
|
|
1992
|
65 |
1-4 |
p. 287-290
|
artikel
|
| 18 |
Defect diffusion in ion implanted glasses
|
Arnold, G.W.
|
|
1992
|
65 |
1-4 |
p. 387-391
|
artikel
|
| 19 |
Defects in alkali halides: atomic force microscopy, cluster spectroscopy, and ultrafast time resolution
|
Williams, R.T.
|
|
1992
|
65 |
1-4 |
p. IN8, 473-483
|
artikel
|
| 20 |
Detailed in situ study of ion beam-induced amorphization of zircon
|
Wang, L.M.
|
|
1992
|
65 |
1-4 |
p. 324-329
|
artikel
|
| 21 |
Direct laser synthesis of thin silicon and germanium nitride/oxynitride layers
|
Craciun, V.
|
|
1992
|
65 |
1-4 |
p. 115-118
|
artikel
|
| 22 |
Displacement damage efficiency in sapphire
|
Agnew, P.
|
|
1992
|
65 |
1-4 |
p. 305-310
|
artikel
|
| 23 |
E'1 centres in buried oxide layers formed by oxygen ion implantation into silicon
|
Barklie, R.C.
|
|
1992
|
65 |
1-4 |
p. 93-96
|
artikel
|
| 24 |
Editorial
|
Götz, Gerhard
|
|
1992
|
65 |
1-4 |
p. vii
|
artikel
|
| 25 |
Editorial Board
|
|
|
1992
|
65 |
1-4 |
p. vi
|
artikel
|
| 26 |
Effect of nitrogen ion bombardment on dielectric surface breakdown
|
Kwok, C.B.
|
|
1992
|
65 |
1-4 |
p. 459-462
|
artikel
|
| 27 |
Electron irradiation displacement damage in photorefractive Bi12SiO20
|
Hodgson, E.R.
|
|
1992
|
65 |
1-4 |
p. 275-277
|
artikel
|
| 28 |
Emission of organic products from the surface of frozen methane under MeV ion irradiation
|
Kaiser, R.I.
|
|
1992
|
65 |
1-4 |
p. 468-471
|
artikel
|
| 29 |
Endothelial cell adhesion to ion implanted polymers
|
Suzuki, Y.
|
|
1992
|
65 |
1-4 |
p. 142-147
|
artikel
|
| 30 |
Energy density effects in the formation of organic residues in frozen methane by MeV ions
|
Kaiser, R.I.
|
|
1992
|
65 |
1-4 |
p. 463-467
|
artikel
|
| 31 |
Energy deposition mechanisms and radiation induced reactions in PMDA-ODA polyimide
|
Iacona, Fabio
|
|
1992
|
65 |
1-4 |
p. 50-54
|
artikel
|
| 32 |
Experimental and theoretical study of anomalous implantation profiles in single crystal magnesium oxide
|
Gea, L.
|
|
1992
|
65 |
1-4 |
p. 282-286
|
artikel
|
| 33 |
Fast heavy ion induced desorption of insulators
|
Wien, K.
|
|
1992
|
65 |
1-4 |
p. IN4, 149-166
|
artikel
|
| 34 |
Focused ion beam lithography
|
Gamo, Kenji
|
|
1992
|
65 |
1-4 |
p. 40-49
|
artikel
|
| 35 |
Formation of silicon nitride layers by nitrogen implantation into Si/CoSi2 systems
|
Almonacid, L.
|
|
1992
|
65 |
1-4 |
p. 84-87
|
artikel
|
| 36 |
Halogen defect aggregation in KI irradiated between 195 K and 295 K
|
Allen, A.M.T.
|
|
1992
|
65 |
1-4 |
p. 516-520
|
artikel
|
| 37 |
Heavy ion radiation damage annealing in track recording insulators and single activation energy model
|
Virk, H.S.
|
|
1992
|
65 |
1-4 |
p. 456-458
|
artikel
|
| 38 |
High dose ion implantation effects in glasses
|
Karge, H.
|
|
1992
|
65 |
1-4 |
p. 380-383
|
artikel
|
| 39 |
High energy heavy ion irradiation damage in yttrium iron garnet
|
Costantini, J.M.
|
|
1992
|
65 |
1-4 |
p. 568-575
|
artikel
|
| 40 |
High fluence implantation in glasses: chemical interactions
|
Mazzoldi, P.
|
|
1992
|
65 |
1-4 |
p. IN6, 367-374
|
artikel
|
| 41 |
Hydroxyapatite-titanium interface reaction induced by keV electron irradiation
|
Torrisi, L.
|
|
1992
|
65 |
1-4 |
p. 139-141
|
artikel
|
| 42 |
Implantation of polymers at medium ion fluences: a spatial heterogeneity of radiation damage due to dominant electronic stopping
|
Fink, D.
|
|
1992
|
65 |
1-4 |
p. 432-437
|
artikel
|
| 43 |
Interaction of MeV ions and VUV photons with polymers and high molecular hydrocarbons
|
Mahfouz, R.M.
|
|
1992
|
65 |
1-4 |
p. 447-451
|
artikel
|
| 44 |
International committee
|
|
|
1992
|
65 |
1-4 |
p. x
|
artikel
|
| 45 |
Ion beam assisted deposition of insulating layers
|
Wolf, G.K.
|
|
1992
|
65 |
1-4 |
p. IN3, 107-114
|
artikel
|
| 46 |
Ion beam enhancement of metal-insulator adhesion
|
Baglin, J.E.E.
|
|
1992
|
65 |
1-4 |
p. 119-128
|
artikel
|
| 47 |
Ion beam mixing of metal-ceramic interfaces
|
Perez, A.
|
|
1992
|
65 |
1-4 |
p. 129-138
|
artikel
|
| 48 |
Ion implantation effects in crystalline quartz
|
Arnold, G.W.
|
|
1992
|
65 |
1-4 |
p. IN5, 213-216
|
artikel
|
| 49 |
Ion implanted waveguides and waveguide lasers
|
Townsend, P.D.
|
|
1992
|
65 |
1-4 |
p. 243-250
|
artikel
|
| 50 |
Irradiation damage in magnetic insulators
|
Studer, F.
|
|
1992
|
65 |
1-4 |
p. 560-567
|
artikel
|
| 51 |
Irradiation effects in high temperature superconductors
|
Barbour, J.C.
|
|
1992
|
65 |
1-4 |
p. IN9, 531-538
|
artikel
|
| 52 |
Jain-Lidiard model calculations of radiation damage in sodium chloride
|
Soppe, W.J.
|
|
1992
|
65 |
1-4 |
p. 493-496
|
artikel
|
| 53 |
Kinetics of correlated annealing of radiation defects in alkali halide crystals
|
Kotomin, E.A.
|
|
1992
|
65 |
1-4 |
p. 512-515
|
artikel
|
| 54 |
Laser energy deposition in insulators
|
Geiler, H.D.
|
|
1992
|
65 |
1-4 |
p. 9-20
|
artikel
|
| 55 |
Laser induced sputtering of insulators
|
Pompe, W.
|
|
1992
|
65 |
1-4 |
p. 200-205
|
artikel
|
| 56 |
Laser irradiation effects in Si+-implanted SiO2
|
Miotello, Antonio
|
|
1992
|
65 |
1-4 |
p. 217-222
|
artikel
|
| 57 |
Lattice location of fission products in UO2 single crystals
|
Turos, A.
|
|
1992
|
65 |
1-4 |
p. 315-318
|
artikel
|
| 58 |
Low energy ion beam oxidation of silicon surfaces: ballistics, diffusion and chemistry
|
Todorov, S.S.
|
|
1992
|
65 |
1-4 |
p. 79-83
|
artikel
|
| 59 |
Measurement of cluster masses up to 107 amu arising as a result of inelastic sputtering of thin layers by ions
|
Baranov, I.A.
|
|
1992
|
65 |
1-4 |
p. 177-180
|
artikel
|
| 60 |
Measurements of the ultrasonic attenuation and velocity variation in neutron irradiated quartz for an intermediate dose of 2.6 × 1019 n/cm2
|
Keppens, V.
|
|
1992
|
65 |
1-4 |
p. 223-227
|
artikel
|
| 61 |
Microstructural characterization of iron ion implantation of silicon carbide
|
Horton, L.L.
|
|
1992
|
65 |
1-4 |
p. 345-351
|
artikel
|
| 62 |
Modelling of the formation of buried dielectric layers by ion implantation
|
Jäger, H.U.
|
|
1992
|
65 |
1-4 |
p. IN2, 67-72
|
artikel
|
| 63 |
Niobium implantation effects in BaTiO3 and SrTiO3
|
Moretti, P.
|
|
1992
|
65 |
1-4 |
p. 264-269
|
artikel
|
| 64 |
Non-equilibrium chemistry in space
|
Roessler, K.
|
|
1992
|
65 |
1-4 |
p. 55-66
|
artikel
|
| 65 |
Nonlinear index of refraction of Cu- and Pb-implanted fused silica
|
Haglund Jr., R.F.
|
|
1992
|
65 |
1-4 |
p. 405-411
|
artikel
|
| 66 |
Nonlinear optical investigation of silicon carbide surface properties
|
Galeckas, A.
|
|
1992
|
65 |
1-4 |
p. 357-360
|
artikel
|
| 67 |
On the relaxation of the photoelectric structure in ruby
|
Vladimirtsev, Yu.V.
|
|
1992
|
65 |
1-4 |
p. 291-293
|
artikel
|
| 68 |
Optical production and destruction of V2 centres in KBr-In and KBr-T1 crystals
|
Popov, A.I.
|
|
1992
|
65 |
1-4 |
p. 521-524
|
artikel
|
| 69 |
Optical properties of bismuth germanale [BGO(2:3)] waveguides formed by ion implantation
|
Mahdavi, S.M.
|
|
1992
|
65 |
1-4 |
p. 251-255
|
artikel
|
| 70 |
Optical studies of point defects induced in NaF crystals by ion implantation and X-rays
|
Kristianpoller, N.N.
|
|
1992
|
65 |
1-4 |
p. 484-487
|
artikel
|
| 71 |
Permeation of implanted deuterium through SrCeO3 (5% Yb)
|
Noriaki Matsunami,
|
|
1992
|
65 |
1-4 |
p. 278-281
|
artikel
|
| 72 |
Photodesorption and photoreactions at surfaces
|
Kreuzer, H.J.
|
|
1992
|
65 |
1-4 |
p. 181-186
|
artikel
|
| 73 |
Photograph key
|
|
|
1992
|
65 |
1-4 |
p. ix
|
artikel
|
| 74 |
Picosecond radiation induced processes in wide-gap crystals
|
Deich, Ruvin
|
|
1992
|
65 |
1-4 |
p. 525-529
|
artikel
|
| 75 |
Plastic deformation in SiO2 induced by heavy-ion irradiation
|
Benyagoub, A.
|
|
1992
|
65 |
1-4 |
p. 228-231
|
artikel
|
| 76 |
Primary and secondary mechanisms in laser-pulse sputtering
|
Kelly, Roger
|
|
1992
|
65 |
1-4 |
p. 187-199
|
artikel
|
| 77 |
Pulse radiation effects in high temperature superconductors
|
Korenev, S.A.
|
|
1992
|
65 |
1-4 |
p. 550-553
|
artikel
|
| 78 |
Radiation damage in nonmetallic solids under dense electronic excitation
|
Itoh, Noriaki
|
|
1992
|
65 |
1-4 |
p. 21-25
|
artikel
|
| 79 |
Radiation damage in nuclear materials
|
Matzke, Hj.
|
|
1992
|
65 |
1-4 |
p. 30-39
|
artikel
|
| 80 |
Radiation effects in glasses
|
Ehrt, D.
|
|
1992
|
65 |
1-4 |
p. IN1, 1-8
|
artikel
|
| 81 |
Radiation enhanced electrical breakdown in Al2O3: field effect
|
Hodgson, E.R.
|
|
1992
|
65 |
1-4 |
p. 298-300
|
artikel
|
| 82 |
Radiation enhanced solubility of calcite: implications for actinide retention
|
Dran, J.-C.
|
|
1992
|
65 |
1-4 |
p. 330-334
|
artikel
|
| 83 |
Radiation-induced amorphization in complex silicates
|
Weber, W.J.
|
|
1992
|
65 |
1-4 |
p. 88-92
|
artikel
|
| 84 |
Radiation induced degradation of Si/SiO2 structures and the nature of defects
|
Füssel, W.
|
|
1992
|
65 |
1-4 |
p. 238-242
|
artikel
|
| 85 |
Radiation induced effects in CdSSe microcrystallites embedded in glass
|
Grivickas, V.
|
|
1992
|
65 |
1-4 |
p. 397-401
|
artikel
|
| 86 |
Radiation resistant optical glasses
|
Speit, Burkhard
|
|
1992
|
65 |
1-4 |
p. 384-386
|
artikel
|
| 87 |
Secondary ion emission from YBa2 Cu 3 O 7−x
|
Kosyachkov, A.A.
|
|
1992
|
65 |
1-4 |
p. 546-549
|
artikel
|
| 88 |
Self-development of cellulose nitrate in linear and nonlinear regimes by ion irradiation
|
Moliton, J.P.
|
|
1992
|
65 |
1-4 |
p. 428-431
|
artikel
|
| 89 |
Sputtering of LiF(100) with low energetic Ne+ and Ne2+ ions
|
Wutte, D.
|
|
1992
|
65 |
1-4 |
p. 167-172
|
artikel
|
| 90 |
Sputtering of solid neon and argon by medium mass ions
|
Schou, J.
|
|
1992
|
65 |
1-4 |
p. 173-176
|
artikel
|
| 91 |
Structural defects and the state of implanted ions in silica glasses implanted with silicon and/or nitrogen ions
|
Hideo Hosono,
|
|
1992
|
65 |
1-4 |
p. 375-379
|
artikel
|
| 92 |
Structural modification of polymer films by ion irradiation
|
Calcagno, L.
|
|
1992
|
65 |
1-4 |
p. IN7, 413-422
|
artikel
|
| 93 |
Study of the effect of low energy electron irradiation on the density and relaxation time of metal-insulator-GaAs interface states
|
Tay, M.
|
|
1992
|
65 |
1-4 |
p. 554-559
|
artikel
|
| 94 |
Study of the ion beam induced amorphisation, bond breaking and optical gap change processes in PET
|
Papaléo, R.M.
|
|
1992
|
65 |
1-4 |
p. 442-446
|
artikel
|
| 95 |
Temperature dependent dynamic ESD processes in alkali halides
|
Kolodziej, J.
|
|
1992
|
65 |
1-4 |
p. 507-511
|
artikel
|
| 96 |
The change of the electronic structure of alkali halide films on W(110) under electron bombardment
|
Dieckhoff, S.
|
|
1992
|
65 |
1-4 |
p. 488-492
|
artikel
|
| 97 |
The effect of irradiation temperature on the optical attenuation recovery in heavily Ge-doped single mode silica core fibers
|
Bertolotti, M.
|
|
1992
|
65 |
1-4 |
p. 402-404
|
artikel
|
| 98 |
Thermal behavior study of Sn and Ag implanted into photoresist film
|
Maltez, R.L.
|
|
1992
|
65 |
1-4 |
p. 423-427
|
artikel
|
| 99 |
Thermo- and photoinduced defects in Y3Al5O12 crystals
|
Akhmadullin, I.Sh.
|
|
1992
|
65 |
1-4 |
p. 270-274
|
artikel
|
| 100 |
Thermo- and photoinduced structural transformations in LiNbO3: Fe monocrystals
|
Akhmadullin, I.Sh.
|
|
1992
|
65 |
1-4 |
p. 260-263
|
artikel
|
| 101 |
The significance of thermalization of E ̄ -level in formation of photoelectric structure in ruby
|
Kurkin, N.N.
|
|
1992
|
65 |
1-4 |
p. 294-297
|
artikel
|
| 102 |
Titanium and niobium implantation into α-Al 2 O 3: structural and mechanical properties
|
Bauer, M.
|
|
1992
|
65 |
1-4 |
p. 301-304
|
artikel
|
| 103 |
Transport and structure of ion irradiated HTSC thin films
|
Meyer, O.
|
|
1992
|
65 |
1-4 |
p. 539-545
|
artikel
|
| 104 |
Ultraviolet laser ablation of halides and oxides
|
Haglund Jr., R.F.
|
|
1992
|
65 |
1-4 |
p. 206-211
|
artikel
|
| 105 |
UV and gamma radiation damage in silica glass and fibres doped with germanium and cerium
|
Anoikin, E.V.
|
|
1992
|
65 |
1-4 |
p. 392-396
|
artikel
|
| 106 |
Wake potential of ions in matter
|
Moneta, M.
|
|
1992
|
65 |
1-4 |
p. 26-29
|
artikel
|
| 107 |
XPS characterization of nitrogen implanted silicon carbide
|
Nakao, A.
|
|
1992
|
65 |
1-4 |
p. 352-356
|
artikel
|
Tijdschrift beschrijving