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                             51 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acceptor-donor pairs in germanium Forkel, D.
 1992
 63 1-2 p. 217-220
4 p.
 artikel
2 A focused gas-ion beam system for submun application Wilbertz, Ch.
 1992
 63 1-2 p. 120-124
5 p.
 artikel
3 A 129I Mössbauer investigation of the ohmic contact formation mechanism in the Au/Te/Au/n-GaAs system, questioned and confirmed by X-ray analysis and Raman spectroscopy Wuyts, K.
 1992
 63 1-2 p. 141-146
6 p.
 artikel
4 An investigation by resistance and photoluminescence measurements of high-energy heavy-ion irradiated GaAs Carin, R.
 1992
 63 1-2 p. 21-24
4 p.
 artikel
5 Annealing of lattice defects in chalcopyrite semiconductors — TDPAC investigations Unterricker, S.
 1992
 63 1-2 p. 236-239
4 p.
 artikel
6 Application of 16O RBS to heavy compound materials Döbeli, M.
 1992
 63 1-2 p. 68-70
3 p.
 artikel
7 Ar ion induced X-ray emission for the analysis of light elements in CdTe Al Neami, A.
 1992
 63 1-2 p. 71-76
6 p.
 artikel
8 Dechanneling cross section for misfit dislocations Romanato, F.
 1992
 63 1-2 p. 36-40
5 p.
 artikel
9 Development of CuInS2 solar cell material by PAC: bulk phases, thin films, and nuclear reaction doping Dzionk, Chr.
 1992
 63 1-2 p. 231-235
5 p.
 artikel
10 Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling Bachmann, T.
 1992
 63 1-2 p. 64-67
4 p.
 artikel
11 Donor-hydrogen complexes in silicon studied by Mössbauer spectroscopy Liang, Z.N.
 1992
 63 1-2 p. 147-150
4 p.
 artikel
12 Dynamic behaviour of Cd-Cu pairs in Si observed by PAC Keller, R.
 1992
 63 1-2 p. 202-204
3 p.
 artikel
13 Dynamics and electronic transitions at impurity complexes in semiconductors Witthuhn, W.
 1992
 63 1-2 p. 209-216
8 p.
 artikel
14 Editorial Board 1992
 63 1-2 p. ii-iii
nvt p.
 artikel
15 Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods Boudart, B.
 1992
 63 1-2 p. 101-105
5 p.
 artikel
16 Elemental analysis of thin layers by elastic heavy ion scattering Grötzschel, R.
 1992
 63 1-2 p. 77-82
6 p.
 artikel
17 Emission channeling studies in semiconductors Hofsäss, H.
 1992
 63 1-2 p. 83-90
8 p.
 artikel
18 Generation of intrinsic defects in CdS: In by doping with Li atoms Wolf, H.
 1992
 63 1-2 p. 240-243
4 p.
 artikel
19 High energy ion irradiation of germanium Levalois, M.
 1992
 63 1-2 p. 25-29
5 p.
 artikel
20 High resolution conversion electron spectroscopy of impurities in semiconductors Petersen, Jon Wulff
 1992
 63 1-2 p. 179-185
7 p.
 artikel
21 Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study Skudlik, H.
 1992
 63 1-2 p. 205-208
4 p.
 artikel
22 Hyperfine interactions and Rutherford backscattering studies of Cd and Hg in CdTe single crystals and thin films Correia, J.G.
 1992
 63 1-2 p. 248-253
6 p.
 artikel
23 Identification of band gap states by deep level transient spectroscopy on radioactive probes Petersen, Jon Wulff
 1992
 63 1-2 p. 186-188
3 p.
 artikel
24 Induced damage by high energy heavy ion irradiation at the GANIL accelerator in semiconductor materials Levalois, M.
 1992
 63 1-2 p. 14-20
7 p.
 artikel
25 Investigation of defects by RBS-channeling methods Götz, G.
 1992
 63 1-2 p. 59-63
5 p.
 artikel
26 Investigation of the amorphization process in ion implanted AIIIBV compounds Wendler, E.
 1992
 63 1-2 p. 47-51
5 p.
 artikel
27 Ion beam analysis of mismatched epitaxial heterostructures Drigo, A.V.
 1992
 63 1-2 p. 30-35
6 p.
 artikel
28 Ion beam deposition and in-situ ion beam analysis Al-Bayati, A.H.
 1992
 63 1-2 p. 109-119
11 p.
 artikel
29 Ion beams in semiconductor physics and technology Kalbitzer, S.
 1992
 63 1-2 p. 1-13
13 p.
 artikel
30 Ion channeling study of P implantation damage in CdTe Leo, G.
 1992
 63 1-2 p. 41-46
6 p.
 artikel
31 Lattice site changes of ion implanted 8Li in Si studied by alpha emission channeling Wahl, U.
 1992
 63 1-2 p. 91-94
4 p.
 artikel
32 Magnetic behavior of isolated Fe and Ni ions in semiconducting compounds Waldmann, H.
 1992
 63 1-2 p. 221-222
2 p.
 artikel
33 Mössbauer and channeling measurements on buried layers of CoSi2 in Si Spanninga, W.G.
 1992
 63 1-2 p. 138-140
3 p.
 artikel
34 Mössbauer spectroscopy investigation of the DX-center in Te-implanted Al x Ga1−x As Bemelmans, H.
 1992
 63 1-2 p. 151-153
3 p.
 artikel
35 Muon-decay positron channeling in semiconductors Simmler, H.
 1992
 63 1-2 p. 125-129
5 p.
 artikel
36 Neutron transmutation doped silicon — technological and economic aspects von Ammon, W.
 1992
 63 1-2 p. 95-100
6 p.
 artikel
37 β-NMR study on the lattice locations of boron implanted into silicon Seelinger, W.
 1992
 63 1-2 p. 173-178
6 p.
 artikel
38 Nuclear interactions of defects in semiconductors — magnetic resonance measurements Ammerlaan, C.A.J.
 1992
 63 1-2 p. 154-162
9 p.
 artikel
39 Nucleation of point defects in low-fluence ion-implanted GaAs and GaP Wesch, W.
 1992
 63 1-2 p. 52-55
4 p.
 artikel
40 PAC investigations of the shallow donor environment in GaAs Schaefer, Th.
 1992
 63 1-2 p. 227-230
4 p.
 artikel
41 PAC studies on impurities in ZnO Deubler, S.
 1992
 63 1-2 p. 223-226
4 p.
 artikel
42 PAC studies on the formation and stability of acceptor-defect complexes in semiconductors Deicher, M.
 1992
 63 1-2 p. 189-197
9 p.
 artikel
43 Perturbed angular correlation observation of vacancy-indium atom defect complexes in (Hg, Cd)Te Hughes, W.C.
 1992
 63 1-2 p. 244-247
4 p.
 artikel
44 Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs Corbel, C.
 1992
 63 1-2 p. 166-172
7 p.
 artikel
45 Positron annihilation in silicon single crystals Doyama, Masao
 1992
 63 1-2 p. 163-165
3 p.
 artikel
46 Precision measurement of axial channel angles Blunier, S.
 1992
 63 1-2 p. 56-58
3 p.
 artikel
47 Preface Langouche, G.
 1992
 63 1-2 p. vii-
1 p.
 artikel
48 Quench-induced defects in silicon Dohlus, P.
 1992
 63 1-2 p. 198-201
4 p.
 artikel
49 Scientific committee 1992
 63 1-2 p. viii-
1 p.
 artikel
50 Single and double buried epitaxial metallic layers in Si prepared by ion implantation Vantomme, A.
 1992
 63 1-2 p. 130-137
8 p.
 artikel
51 The electrical and radioactive assessment of the transmutation doping of GaAs following implantation by 111In Gwilliam, R.
 1992
 63 1-2 p. 106-108
3 p.
 artikel
                             51 gevonden resultaten
 
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