| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An attempt to prepare La2CuO4 by high energy ion beam mixing
|
Desimoni, Judith
|
|
1992
|
62 |
3 |
p. 319-321
3 p.
|
artikel
|
| 2 |
Channeling effects in high energy implantation of N+ in silicon
|
Gasparotto, A.
|
|
1992
|
62 |
3 |
p. 356-360
5 p.
|
artikel
|
| 3 |
Damage created in silicon by 1 MeV O+ ions as a function of beam power
|
Grob, A.
|
|
1992
|
62 |
3 |
p. 309-313
5 p.
|
artikel
|
| 4 |
3D concentration distributions of ion implants in amorphous solids
|
Günzler, R.
|
|
1992
|
62 |
3 |
p. 350-355
6 p.
|
artikel
|
| 5 |
Deep-level transient spectroscopy studies of U-irradiated silicon
|
Mary, P.
|
|
1992
|
62 |
3 |
p. 391-393
3 p.
|
artikel
|
| 6 |
Dynamics of lattice damage accumulation for MeV ions in silicon
|
Golanski, A.
|
|
1992
|
62 |
3 |
p. 365-371
7 p.
|
artikel
|
| 7 |
Editorial
|
Campisano, S.U.
|
|
1992
|
62 |
3 |
p. iii-
1 p.
|
artikel
|
| 8 |
EPR and RBS study of defects produced by MeV ion implantation into silicon
|
Sealy, L.
|
|
1992
|
62 |
3 |
p. 384-387
4 p.
|
artikel
|
| 9 |
Helium ion implanted waveguide lasers
|
Townsend, P.D.
|
|
1992
|
62 |
3 |
p. 405-409
5 p.
|
artikel
|
| 10 |
High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen
|
Frey, L.
|
|
1992
|
62 |
3 |
p. 410-415
6 p.
|
artikel
|
| 11 |
High energy P implants in silicon
|
Raineri, V.
|
|
1992
|
62 |
3 |
p. 331-337
7 p.
|
artikel
|
| 12 |
Ion-beam synthesis of new phases in silicon interpreted as the decay of a supersaturated solid solution
|
Danilin, A.B.
|
|
1992
|
62 |
3 |
p. 322-324
3 p.
|
artikel
|
| 13 |
Ion implantation measurements with a noncontact nondestructive high frequency photoacoustic technique
|
Zhao Qiu Wang,
|
|
1992
|
62 |
3 |
p. 400-403
4 p.
|
artikel
|
| 14 |
Longitudinal and transversal moments of the distribution of boron ions implanted in silicon in the MeV energy range
|
Thevenin, P.
|
|
1992
|
62 |
3 |
p. 346-349
4 p.
|
artikel
|
| 15 |
Macroscopic phenomena caused by high dose MeV energy He, Ne and Ar implantation
|
Pászti, F.
|
|
1992
|
62 |
3 |
p. 377-383
7 p.
|
artikel
|
| 16 |
PAC studies on xenon irradiated Ti and Ni films and Ni-Ti multilayers
|
Wodniecki, P.
|
|
1992
|
62 |
3 |
p. 394-399
6 p.
|
artikel
|
| 17 |
Pre-amorphization damage in Si(100) implanted with high mass MeV ions
|
Schreutelkamp, R.J.
|
|
1992
|
62 |
3 |
p. 372-376
5 p.
|
artikel
|
| 18 |
Progress report on Aramis, the 2 MV tandem at Orsay
|
Bernas, H.
|
|
1992
|
62 |
3 |
p. 416-420
5 p.
|
artikel
|
| 19 |
Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation
|
Lindner, J.K.N.
|
|
1992
|
62 |
3 |
p. 314-318
5 p.
|
artikel
|
| 20 |
Range parameters of deep ion implants in group IV semiconductors
|
Schüle, V.
|
|
1992
|
62 |
3 |
p. 338-345
8 p.
|
artikel
|
| 21 |
RFQ accelerators for ion implantation
|
Schempp, A.
|
|
1992
|
62 |
3 |
p. 425-430
6 p.
|
artikel
|
| 22 |
Si0.57Ge0.43 alloy layers implanted with oxygen: sputtering yields and atomic composition depth profiles
|
Zhang, J.P.
|
|
1992
|
62 |
3 |
p. 325-330
6 p.
|
artikel
|
| 23 |
Stability of vacancies in silicon irradiated by xenon ions at 77 K
|
Bogdanski, P.
|
|
1992
|
62 |
3 |
p. 388-390
3 p.
|
artikel
|
| 24 |
Supporting organisations and sponsors
|
|
|
1992
|
62 |
3 |
p. iv-
1 p.
|
artikel
|
| 25 |
The effect of high energy boron co-implantation on the activation of silicon implants in GaAs
|
Wilson, R.J.
|
|
1992
|
62 |
3 |
p. 361-363
3 p.
|
artikel
|
| 26 |
The HVEE Tandetron Line; new developments and design considerations
|
Mous, D.J.W.
|
|
1992
|
62 |
3 |
p. 421-424
4 p.
|
artikel
|
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