| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A simultaneous dual-polarity mass spectrometer with electron start for MeV-SIMS
|
Miltenberger, Klaus-Ulrich
|
|
|
507 |
C |
p. 36-41
|
artikel
|
| 2 |
Bias-dependent displacement damage effects in a silicon avalanche photodiode
|
Zedric, Robert M.
|
|
|
507 |
C |
p. 42-45
|
artikel
|
| 3 |
Differential cross-section measurements for proton elastic scattering on natSi in the energy range Ep,lab = 3–5 MeV, suitable for EBS
|
Maragkos, F.
|
|
|
507 |
C |
p. 20-26
|
artikel
|
| 4 |
Editorial Board
|
|
|
|
507 |
C |
p. ii
|
artikel
|
| 5 |
Geant4 X-ray fluorescence with updated libraries
|
Bakr, Samer
|
|
|
507 |
C |
p. 11-19
|
artikel
|
| 6 |
Measurement of average cross sections and isomer ratios for natRe(γ,xn) reactions at the end-point bremsstrahlung energies of 30 MeV and 40 MeV
|
Avetisyan, R.V.
|
|
|
507 |
C |
p. 7-10
|
artikel
|
| 7 |
New analytical expressions derived from the localized transition model for luminescence stimulation modes of TL and LM-OSL and their applications in computerized curve deconvolution
|
Peng, Jun
|
|
|
507 |
C |
p. 46-57
|
artikel
|
| 8 |
Rapid extraction of short-lived isotopes from a buffer gas cell for use in gas-phase chemistry experiments, Part II: On-line studies with short-lived accelerator-produced radionuclides
|
Götz, S.
|
|
|
507 |
C |
p. 27-35
|
artikel
|
| 9 |
Temperature dependence of irradiation-induced nanocrystallization in amorphous silicon carbide
|
Zhang, Limin
|
|
|
507 |
C |
p. 1-6
|
artikel
|
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