| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate site populations from Mössbauer spectroscopy
|
Rancourt, D.G.
|
|
1989
|
44 |
2 |
p. 199-210
12 p.
|
artikel
|
| 2 |
A method for high sensitivity deuterium measurements by means of the D(3He, p)4He reaction and its applications
|
Qi Qiu,
|
|
1989
|
44 |
2 |
p. 179-183
5 p.
|
artikel
|
| 3 |
An analysis of the electron spectrum effect on LiF response to cobalt-60 gamma-rays
|
Silva, Heitor
|
|
1989
|
44 |
2 |
p. 166-171
6 p.
|
artikel
|
| 4 |
An application of SSNT-detectors in intercalation studies
|
Zamani, M.
|
|
1989
|
44 |
2 |
p. 216-218
3 p.
|
artikel
|
| 5 |
An improved electron bremsstrahlung cross-section formula for Monte Carlo transport simulation
|
Al-Beteri, A.A.
|
|
1989
|
44 |
2 |
p. 149-157
9 p.
|
artikel
|
| 6 |
Anomalous penetration of Cs, Ba and Tl through thin Si films
|
Forster, J.S.
|
|
1989
|
44 |
2 |
p. 195-198
4 p.
|
artikel
|
| 7 |
Calendar
|
|
|
1989
|
44 |
2 |
p. 249-251
3 p.
|
artikel
|
| 8 |
Charge collection ion microscopy: Imaging of defects in semiconductors with a positive ion microbeam
|
Angell, David
|
|
1989
|
44 |
2 |
p. 172-178
7 p.
|
artikel
|
| 9 |
Determination of concentration profiles by elastic recoil detection with a ΔE−E gas telescope and high energy incident heavy ions
|
Stoquert, J.P.
|
|
1989
|
44 |
2 |
p. 184-194
11 p.
|
artikel
|
| 10 |
Enhanced activation of implanted phosphorus in silicon under rf plasma treatment
|
Valakh, M.Ya.
|
|
1989
|
44 |
2 |
p. 146-148
3 p.
|
artikel
|
| 11 |
Gamma- and X-ray spectrometry with semiconductor detectors
|
Hansen, P.G.
|
|
1989
|
44 |
2 |
p. 246-247
2 p.
|
artikel
|
| 12 |
Good performance of two kinds of cryogenic film-type thermometers after exposure to 107 Gy of ionizing radiation and in magnetic fields of up to 7 T at 4.2 K
|
Meijer, H.C.
|
|
1989
|
44 |
2 |
p. 159-165
7 p.
|
artikel
|
| 13 |
Grid shadow pattern analysis of achromatic quadrupole lenses
|
Jamieson, David N.
|
|
1989
|
44 |
2 |
p. 227-232
6 p.
|
artikel
|
| 14 |
In situ channelling analysis during thermal annealing of 4He+ implanted LiNbO3
|
Barfoot, K.M.
|
|
1989
|
44 |
2 |
p. 141-145
5 p.
|
artikel
|
| 15 |
Measurement of spectral and polarization characteristics of parametric X-rays in a Si crystal
|
Adishchev, Yu.N.
|
|
1989
|
44 |
2 |
p. 130-136
7 p.
|
artikel
|
| 16 |
Methods of surface analysis
|
Chadderton, L.T.
|
|
1989
|
44 |
2 |
p. 245-246
2 p.
|
artikel
|
| 17 |
MeV ion enhanced adhesion in the gold on tantalum system
|
Sugden, S.
|
|
1989
|
44 |
2 |
p. 137-140
4 p.
|
artikel
|
| 18 |
Milne's problem in backscattering Mössbauer spectroscopy
|
Belozerskii, G.N.
|
|
1989
|
44 |
2 |
p. 211-215
5 p.
|
artikel
|
| 19 |
On the possibility of using breakthrough time measurements in nuclear track filters for identification of heavy ions
|
Chakarvarti, S.K.
|
|
1989
|
44 |
2 |
p. 242-244
3 p.
|
artikel
|
| 20 |
PET — grundlage und anwendung der positronen-emissions-tomographie
|
Steenstrup, S.
|
|
1989
|
44 |
2 |
p. 247-248
2 p.
|
artikel
|
| 21 |
The design of an achromatic quadrupole triplet with symmetric demagnification
|
Tapper, U.A.Staffan
|
|
1989
|
44 |
2 |
p. 219-226
8 p.
|
artikel
|
| 22 |
The performance of a 5 metre normal incidence monochromator at the Daresbury Laboratory Synchrotron Radiation Source
|
Holland, D.M.P.
|
|
1989
|
44 |
2 |
p. 233-241
9 p.
|
artikel
|
| 23 |
The scattering of He ions off Ni(110) at grazing incidence: Surface channeling
|
Derks, H.
|
|
1989
|
44 |
2 |
p. 125-129
5 p.
|
artikel
|
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