| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical formulas for ionization cross sections and coster-kronig corrected fluorescence yields of the L1, L2, and L3 subshells
|
Miyagawa, Y.
|
|
1988
|
30 |
2 |
p. 115-122
8 p.
|
artikel
|
| 2 |
An empirical treatment of nonrelattvistic proton beam spreading
|
Antolak, A.J.
|
|
1988
|
30 |
2 |
p. 182-184
3 p.
|
artikel
|
| 3 |
An impulsive collision model for the vibrational and rotational excitation of sputtered molecules
|
de Jonge, R.
|
|
1988
|
30 |
2 |
p. 159-172
14 p.
|
artikel
|
| 4 |
An intercomparison of absolute measurements of the oxygen and tantalum thickness of tantalum pentoxide reference materials, BCR 261, by six laboratories
|
Seah, M.P.
|
|
1988
|
30 |
2 |
p. 140-151
12 p.
|
artikel
|
| 5 |
An intercomparison of tantalum pentoxide reference studies
|
Seah, M.P.
|
|
1988
|
30 |
2 |
p. 128-139
12 p.
|
artikel
|
| 6 |
A two nuclide method for wear measurements with particle loss
|
Eifrig, Ch.
|
|
1988
|
30 |
2 |
p. 203-206
4 p.
|
artikel
|
| 7 |
Calendar
|
|
|
1988
|
30 |
2 |
p. 223-226
4 p.
|
artikel
|
| 8 |
Dechanneling at an interface of finite width
|
Vos, M.
|
|
1988
|
30 |
2 |
p. 173-181
9 p.
|
artikel
|
| 9 |
Determination of strain in MBE (In, Ga)As films grown on GaAs(100) substrate by ion channeling
|
Flagmeyer, R.
|
|
1988
|
30 |
2 |
p. 219-222
4 p.
|
artikel
|
| 10 |
Electron intensities obtained during backscattered-Mössbauer spectroscopy
|
Lee, T-S.
|
|
1988
|
30 |
2 |
p. 196-202
7 p.
|
artikel
|
| 11 |
Lattice location calculation of elements implanted in Si by miedema parameters
|
Ódor, G.
|
|
1988
|
30 |
2 |
p. 217-218
2 p.
|
artikel
|
| 12 |
Measurements of the differential cross sections for recoil tritons in 4He−3T scattering at energies between 0.5 and 2.5 MeV
|
Sawicki, J.A.
|
|
1988
|
30 |
2 |
p. 123-127
5 p.
|
artikel
|
| 13 |
Passage of MeV-energy electrons through monocrystals
|
Dabagov, S.B.
|
|
1988
|
30 |
2 |
p. 185-190
6 p.
|
artikel
|
| 14 |
Photon counting method for measuring the current fraction in D22 +−He+ mixed ion sputtering
|
Hiroshi, Akatsuka
|
|
1988
|
30 |
2 |
p. 207-210
4 p.
|
artikel
|
| 15 |
Proposed new reactor-activated positron source for intense slow e+ beam production
|
Skalsey, M.
|
|
1988
|
30 |
2 |
p. 211-216
6 p.
|
artikel
|
| 16 |
Simulation of isotopic mass effects in sputtering, II
|
Shapiro, M.H.
|
|
1988
|
30 |
2 |
p. 152-158
7 p.
|
artikel
|
| 17 |
The secondary-electron yield measured for 5–24 MeV protons on aluminum-oxide and gold targets
|
Borovsky, Joseph E.
|
|
1988
|
30 |
2 |
p. 191-195
5 p.
|
artikel
|
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