| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A broad chemical and structural characterization of the damaged region of carbon implanted alumina
|
González, M.
|
|
2009
|
267 |
8-9 |
p. 1468-1471
4 p.
|
artikel
|
| 2 |
Amorphization of Ge nanocrystals embedded in amorphous silica under ion irradiation
|
Djurabekova, Flyura
|
|
2009
|
267 |
8-9 |
p. 1235-1238
4 p.
|
artikel
|
| 3 |
Amorphous pocket model based on the modified heat transport equation and local lattice collapse
|
Kovač, D.
|
|
2009
|
267 |
8-9 |
p. 1229-1231
3 p.
|
artikel
|
| 4 |
Analysis of Si crystal irradiated by highly-charged Ar ions using RBS-channeling technique
|
Momota, S.
|
|
2009
|
267 |
8-9 |
p. 1412-1414
3 p.
|
artikel
|
| 5 |
Annealing behavior of lithium niobate irradiated with He-ions at 100K
|
Gischkat, Th.
|
|
2009
|
267 |
8-9 |
p. 1492-1495
4 p.
|
artikel
|
| 6 |
Assessment of swift-ion damage by RBS/C: Determination of the amorphization threshold
|
Rivera, A.
|
|
2009
|
267 |
8-9 |
p. 1460-1463
4 p.
|
artikel
|
| 7 |
Atomic flows, coronas and cratering in Au, Si and SiO 2
|
Nordlund, Kai
|
|
2009
|
267 |
8-9 |
p. 1420-1423
4 p.
|
artikel
|
| 8 |
Au implantation into various types of silicate glasses
|
Malinský, P.
|
|
2009
|
267 |
8-9 |
p. 1575-1578
4 p.
|
artikel
|
| 9 |
Author Index Proceedings
|
|
|
2009
|
267 |
8-9 |
p. 1748-1760
13 p.
|
artikel
|
| 10 |
Characterisation of Ni+ implanted PEEK, PET and PI
|
Mackova, A.
|
|
2009
|
267 |
8-9 |
p. 1549-1552
4 p.
|
artikel
|
| 11 |
Characteristics of poly(vinylidene difluoride) modified by plasma-based ion implantation
|
Okuji, S.
|
|
2009
|
267 |
8-9 |
p. 1557-1560
4 p.
|
artikel
|
| 12 |
Committees and sponsors
|
Möller, Wolfhard
|
|
2009
|
267 |
8-9 |
p. vi-vii
nvt p.
|
artikel
|
| 13 |
Contents
|
|
|
2009
|
267 |
8-9 |
p. xi-xvi
nvt p.
|
artikel
|
| 14 |
Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing
|
Voelskow, Matthias
|
|
2009
|
267 |
8-9 |
p. 1269-1272
4 p.
|
artikel
|
| 15 |
Controlling nickel silicide phase formation by Si implantation damage
|
Guihard, M.
|
|
2009
|
267 |
8-9 |
p. 1285-1289
5 p.
|
artikel
|
| 16 |
Control of cell behavior on PTFE surface using ion beam irradiation
|
Kitamura, Akane
|
|
2009
|
267 |
8-9 |
p. 1638-1641
4 p.
|
artikel
|
| 17 |
Control of the first-order antiferromagnetic–ferrimagnetic phase transition in Cr-modified Mn2Sb thin films by energetic ion irradiation
|
Madono, K.
|
|
2009
|
267 |
8-9 |
p. 1604-1607
4 p.
|
artikel
|
| 18 |
Corrections to the Walker–Thompson estimate of the cascade volume
|
Swaminarayan, S.
|
|
2009
|
267 |
8-9 |
p. 1713-1716
4 p.
|
artikel
|
| 19 |
Corrosion resistance of magnesium treated by hydrocarbon plasma immersion ion implantation
|
Yekehtaz, M.
|
|
2009
|
267 |
8-9 |
p. 1666-1669
4 p.
|
artikel
|
| 20 |
Damage analysis of benzene induced by keV fullerene bombardment
|
Czerwinski, B.
|
|
2009
|
267 |
8-9 |
p. 1440-1443
4 p.
|
artikel
|
| 21 |
Defect engineering in the MOSLED structure by ion implantation
|
Prucnal, S.
|
|
2009
|
267 |
8-9 |
p. 1311-1313
3 p.
|
artikel
|
| 22 |
Development of CrN precipitates during the initial stages of PIII nitriding of stainless steel thin films
|
Manova, D.
|
|
2009
|
267 |
8-9 |
p. 1536-1539
4 p.
|
artikel
|
| 23 |
Distribution of carbon in polycrystalline copper surfaces treated by methane plasma immersion ion implantation
|
Flege, S.
|
|
2009
|
267 |
8-9 |
p. 1531-1535
5 p.
|
artikel
|
| 24 |
Early stage of the crystallization in amorphous Fe–Si layers: Formation and growth of metastable α-FeSi2
|
Naito, Muneyuki
|
|
2009
|
267 |
8-9 |
p. 1290-1293
4 p.
|
artikel
|
| 25 |
Editorial
|
Möller, Wolfhard
|
|
2009
|
267 |
8-9 |
p. v-
1 p.
|
artikel
|
| 26 |
Editorial board
|
|
|
2009
|
267 |
8-9 |
p. IFC-
1 p.
|
artikel
|
| 27 |
Effect of collision cascade density on radiation damage in SiC
|
Azarov, A.Yu.
|
|
2009
|
267 |
8-9 |
p. 1247-1250
4 p.
|
artikel
|
| 28 |
Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN
|
Wahl, U.
|
|
2009
|
267 |
8-9 |
p. 1340-1344
5 p.
|
artikel
|
| 29 |
Effect of ion energy and chemistry on layer growth processes during nitriding of CoCr alloys
|
Lutz, J.
|
|
2009
|
267 |
8-9 |
p. 1522-1525
4 p.
|
artikel
|
| 30 |
Effects of ion irradiation in metallic glasses
|
Carter, Jesse
|
|
2009
|
267 |
8-9 |
p. 1518-1521
4 p.
|
artikel
|
| 31 |
Effects of working pressure on the deposition of diamond-like carbon films prepared by bipolar-type plasma based ion implantation
|
Nakao, Setsuo
|
|
2009
|
267 |
8-9 |
p. 1684-1687
4 p.
|
artikel
|
| 32 |
Electrical and photoluminescence properties of carbon implanted ZnO bulk single crystals
|
Matsumoto, K.
|
|
2009
|
267 |
8-9 |
p. 1568-1570
3 p.
|
artikel
|
| 33 |
Electrical and structural characterization of ion implanted GaN
|
Usman, M.
|
|
2009
|
267 |
8-9 |
p. 1561-1563
3 p.
|
artikel
|
| 34 |
Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure
|
Tyschenko, I.E.
|
|
2009
|
267 |
8-9 |
p. 1360-1363
4 p.
|
artikel
|
| 35 |
Enhanced sputtering yields of carbon due to accumulation of low-energy Xe ions
|
Kenmotsu, T.
|
|
2009
|
267 |
8-9 |
p. 1717-1720
4 p.
|
artikel
|
| 36 |
Enhancement of the corrosion resistance of a Ti-based alloy by ion beam deposition methods
|
Noli, F.
|
|
2009
|
267 |
8-9 |
p. 1670-1674
5 p.
|
artikel
|
| 37 |
Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and subsequent annealing in CO atmosphere
|
Voelskow, M.
|
|
2009
|
267 |
8-9 |
p. 1364-1367
4 p.
|
artikel
|
| 38 |
Er+ implantation in SnO2:SiO2 layers: Structure changes and light emission
|
Gaiduk, P.I.
|
|
2009
|
267 |
8-9 |
p. 1336-1339
4 p.
|
artikel
|
| 39 |
Er+ medium energy ion implantation into lithium niobate
|
Svecova, B.
|
|
2009
|
267 |
8-9 |
p. 1332-1335
4 p.
|
artikel
|
| 40 |
Evolution of surface morphology of nano and micro structures during focused ion beam induced growth
|
Tripathi, Sarvesh K.
|
|
2009
|
267 |
8-9 |
p. 1381-1385
5 p.
|
artikel
|
| 41 |
Fabrication of Si–C–N compounds in silicon carbide by ion implantation
|
Suvorova, Alexandra A.
|
|
2009
|
267 |
8-9 |
p. 1294-1298
5 p.
|
artikel
|
| 42 |
Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters
|
Wu, Aimin
|
|
2009
|
267 |
8-9 |
p. 1489-1491
3 p.
|
artikel
|
| 43 |
Far-infrared spectroscopy of Au-implanted lithium niobate (LiNbO3)
|
Ogiso, Hisato
|
|
2009
|
267 |
8-9 |
p. 1579-1582
4 p.
|
artikel
|
| 44 |
Formation of germanium nanoparticles in silica glass studied by optical absorption and X-ray absorption fine structure analysis
|
Yoshida, Tomoko
|
|
2009
|
267 |
8-9 |
p. 1368-1371
4 p.
|
artikel
|
| 45 |
Formation of the dendrite structure at ion beam synthesis in the external magnetic field
|
Gumarov, G.G.
|
|
2009
|
267 |
8-9 |
p. 1307-1310
4 p.
|
artikel
|
| 46 |
Generation of RF plasma assisted high power pulsed sputtering glow discharge without using a magnetic field
|
Yukimura, Ken
|
|
2009
|
267 |
8-9 |
p. 1701-1704
4 p.
|
artikel
|
| 47 |
Gettering layer for oxygen accumulation in the initial stage of SIMOX processing
|
Ou, Xin
|
|
2009
|
267 |
8-9 |
p. 1273-1276
4 p.
|
artikel
|
| 48 |
Graphitization behavior of the implanted furan-resin-derived carbon
|
Teranishi, Yoshikazu
|
|
2009
|
267 |
8-9 |
p. 1259-1263
5 p.
|
artikel
|
| 49 |
He implantation induced microstructure- and hardness-modification of the intermetallic γ-TiAl
|
Pouchon, Manuel A.
|
|
2009
|
267 |
8-9 |
p. 1500-1504
5 p.
|
artikel
|
| 50 |
High concentration Mn ion implantation in Si
|
Peng, Nianhua
|
|
2009
|
267 |
8-9 |
p. 1623-1625
3 p.
|
artikel
|
| 51 |
High energy Si ions bombardment effects on the properties of nano-layers of SiO2/SiO2 +Ag
|
Güner, S.
|
|
2009
|
267 |
8-9 |
p. 1353-1355
3 p.
|
artikel
|
| 52 |
High-speed processing with Cl2 cluster ion beam
|
Seki, T.
|
|
2009
|
267 |
8-9 |
p. 1444-1446
3 p.
|
artikel
|
| 53 |
Hydrogen retention induced by ion implantation in tungsten trioxide films
|
Inouye, Aichi
|
|
2009
|
267 |
8-9 |
p. 1480-1483
4 p.
|
artikel
|
| 54 |
Impact of implantation on the properties of N2O-nitrided oxides of p+- and n+-gate MOS devices
|
Naumova, O.V.
|
|
2009
|
267 |
8-9 |
p. 1564-1567
4 p.
|
artikel
|
| 55 |
Impact of Ni co-implantation on Si nanocrystals formation and luminescence
|
Desjardins, J.F.
|
|
2009
|
267 |
8-9 |
p. 1317-1320
4 p.
|
artikel
|
| 56 |
Improved bio-tribology of biomedical alloys by ion implantation techniques
|
Díaz, C.
|
|
2009
|
267 |
8-9 |
p. 1630-1633
4 p.
|
artikel
|
| 57 |
Improvement of corrosion protection property of Mg-alloy by DLC and Si–DLC coatings with PBII technique and multi-target DC–RF magnetron sputtering
|
Masami, Ikeyama
|
|
2009
|
267 |
8-9 |
p. 1675-1679
5 p.
|
artikel
|
| 58 |
Infrared analysis of ion beam irradiated polymers
|
Delgado, A.O.
|
|
2009
|
267 |
8-9 |
p. 1546-1548
3 p.
|
artikel
|
| 59 |
Inverse spinel ZnFe 2 O 4 nanoparticles synthesized by ion implantation and post-annealing: An investigation using X-ray spectroscopy and magneto-transport
|
Zhou, Shengqiang
|
|
2009
|
267 |
8-9 |
p. 1620-1622
3 p.
|
artikel
|
| 60 |
Investigation of nucleation and phase formation of photocatalytically active TiO2 films by MePBIID
|
Gjevori, A.
|
|
2009
|
267 |
8-9 |
p. 1658-1661
4 p.
|
artikel
|
| 61 |
Investigation of plasma potential and pulsed discharge characteristics in enhanced glow discharge plasma immersion ion implantation and deposition
|
Li, Liuhe
|
|
2009
|
267 |
8-9 |
p. 1696-1700
5 p.
|
artikel
|
| 62 |
Investigation of the magnetic anisotropy of silicide films ion-beam synthesized in the external magnetic field
|
Gumarov, G.G.
|
|
2009
|
267 |
8-9 |
p. 1600-1603
4 p.
|
artikel
|
| 63 |
Ion beam figuring for lithography optics
|
Weiser, Martin
|
|
2009
|
267 |
8-9 |
p. 1390-1393
4 p.
|
artikel
|
| 64 |
Ion beam induced luminescence of polyethylene terephthalate foils under MeV H and He ion bombardment
|
Nagata, S.
|
|
2009
|
267 |
8-9 |
p. 1553-1556
4 p.
|
artikel
|
| 65 |
Ion beam modification of chitosan and cellulose membranes for simulation of ion bombardment of plant cell envelope
|
Prakrajang, K.
|
|
2009
|
267 |
8-9 |
p. 1645-1649
5 p.
|
artikel
|
| 66 |
ION BEAM MODIFICATION OF MATERIALS
|
Möller, Wolfhard
|
|
2009
|
267 |
8-9 |
p. iii-
1 p.
|
artikel
|
| 67 |
Ion beam synthesis of SiC by C implantation into SIMOX(111)
|
dos Reis, R.M.S.
|
|
2009
|
267 |
8-9 |
p. 1281-1284
4 p.
|
artikel
|
| 68 |
Ion implantation effects in single crystal Si investigated by Raman spectroscopy
|
Harriman, T.A.
|
|
2009
|
267 |
8-9 |
p. 1232-1234
3 p.
|
artikel
|
| 69 |
Ion implantation studies on VO x films prepared by pulsed dc reactive sputtering
|
Venkatasubramanian, Chandrasekaran
|
|
2009
|
267 |
8-9 |
p. 1476-1479
4 p.
|
artikel
|
| 70 |
Ion induced structural modification and nano-crystalline formation of Zr–Al–Ni–Cu metallic glasses
|
Nagata, S.
|
|
2009
|
267 |
8-9 |
p. 1514-1517
4 p.
|
artikel
|
| 71 |
Ion-irradiation-induced damage of steels characterized by means of nanoindentation
|
Heintze, C.
|
|
2009
|
267 |
8-9 |
p. 1505-1508
4 p.
|
artikel
|
| 72 |
Irradiation induced clustering in low copper or copper free ferritic model alloys
|
Radiguet, B.
|
|
2009
|
267 |
8-9 |
p. 1496-1499
4 p.
|
artikel
|
| 73 |
Kinetic electron emission from metal surfaces by slow Na+ ions
|
Pisarra, M.
|
|
2009
|
267 |
8-9 |
p. 1721-1724
4 p.
|
artikel
|
| 74 |
Lattice location and annealing studies of Hf implanted CaF2
|
Geruschke, Thomas
|
|
2009
|
267 |
8-9 |
p. 1472-1475
4 p.
|
artikel
|
| 75 |
Low temperature formation of luminescent Si nanocrystals with combined process of excimer UV-light irradiation and RTA
|
Iwayama, T.S.
|
|
2009
|
267 |
8-9 |
p. 1328-1331
4 p.
|
artikel
|
| 76 |
Mapping of ion beam induced current changes in FinFETs
|
Weis, C.D.
|
|
2009
|
267 |
8-9 |
p. 1222-1225
4 p.
|
artikel
|
| 77 |
Mechanical and electrical properties of diamond-like carbon films deposited by plasma source ion implantation
|
Baba, K.
|
|
2009
|
267 |
8-9 |
p. 1688-1691
4 p.
|
artikel
|
| 78 |
Mechanisms of ion-induced GaN thin layer splitting
|
Moutanabbir, O.
|
|
2009
|
267 |
8-9 |
p. 1264-1268
5 p.
|
artikel
|
| 79 |
Memory effect of magnetic nanoparticle systems originating from particle size distribution
|
Zhang, Gufei
|
|
2009
|
267 |
8-9 |
p. 1596-1599
4 p.
|
artikel
|
| 80 |
MeV Si ion beam modification effects on the thermoelectric generator from Er0.1Fe1.9SbGe0.4 thin film
|
Budak, S.
|
|
2009
|
267 |
8-9 |
p. 1592-1595
4 p.
|
artikel
|
| 81 |
MeV Si ions bombardment effects on the thermoelectric properties of Co0.1Sb x Ge y thin films
|
Güner, S.
|
|
2009
|
267 |
8-9 |
p. 1588-1591
4 p.
|
artikel
|
| 82 |
Micro and nano patterning by focused ion beam enhanced adhesion
|
Shukla, Neeraj
|
|
2009
|
267 |
8-9 |
p. 1376-1380
5 p.
|
artikel
|
| 83 |
Micro-Raman depth profile investigations of beveled Al+-ion implanted 6H-SiC samples
|
Żuk, J.
|
|
2009
|
267 |
8-9 |
p. 1251-1254
4 p.
|
artikel
|
| 84 |
Microstructural and mechanical characterization of nitrogen ion implanted layer on 316L stainless steel
|
Öztürk, O.
|
|
2009
|
267 |
8-9 |
p. 1526-1530
5 p.
|
artikel
|
| 85 |
Microstructure of ion-implanted region in TiNi alloy
|
Ikenaga, Noriaki
|
|
2009
|
267 |
8-9 |
p. 1509-1513
5 p.
|
artikel
|
| 86 |
Microstructure of Ti thin films formed by energetic physical vapour deposition processes
|
Manova, D.
|
|
2009
|
267 |
8-9 |
p. 1680-1683
4 p.
|
artikel
|
| 87 |
Mn-implanted, polycrystalline indium tin oxide and indium oxide films
|
Scarlat, Camelia
|
|
2009
|
267 |
8-9 |
p. 1616-1619
4 p.
|
artikel
|
| 88 |
Modification of atomic solids via electronic subsystem probed by spectroscopic methods
|
Savchenko, E.V.
|
|
2009
|
267 |
8-9 |
p. 1733-1736
4 p.
|
artikel
|
| 89 |
Modification of magnetic properties of FeRh intermetallic compounds by energetic ion beam bombardment
|
Kosugi, S.
|
|
2009
|
267 |
8-9 |
p. 1612-1615
4 p.
|
artikel
|
| 90 |
Modification of the magnetic and the structural properties of Pt/Cr/Co multilayers by He+-ion irradiation
|
Tripathi, J.K.
|
|
2009
|
267 |
8-9 |
p. 1608-1611
4 p.
|
artikel
|
| 91 |
Molecular dynamics simulations of argon cluster impacts on a nickel film surface
|
Cheng, Y.Y.
|
|
2009
|
267 |
8-9 |
p. 1428-1431
4 p.
|
artikel
|
| 92 |
Molecular dynamics simulations of the structure of latent tracks in quartz and amorphous SiO2
|
Pakarinen, Olli H.
|
|
2009
|
267 |
8-9 |
p. 1456-1459
4 p.
|
artikel
|
| 93 |
Morphological evolution of films composed of energetic and size-selected silver nanocluster ions
|
Bhattacharyya, S.R.
|
|
2009
|
267 |
8-9 |
p. 1432-1435
4 p.
|
artikel
|
| 94 |
Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers
|
Tyschenko, I.E.
|
|
2009
|
267 |
8-9 |
p. 1277-1280
4 p.
|
artikel
|
| 95 |
Nanostructured carbide surfaces prepared by surfactant sputtering
|
Hofsäss, H.
|
|
2009
|
267 |
8-9 |
p. 1398-1402
5 p.
|
artikel
|
| 96 |
Nano-structures for sensors on SOI by writing FIB implantation and subsequent anisotropic wet chemical etching
|
Bischoff, L.
|
|
2009
|
267 |
8-9 |
p. 1372-1375
4 p.
|
artikel
|
| 97 |
N ion irradiation enhancement of photocatalytic activity of TiO2
|
Matsunami, N.
|
|
2009
|
267 |
8-9 |
p. 1654-1657
4 p.
|
artikel
|
| 98 |
Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation
|
Shiino, Tomohisa
|
|
2009
|
267 |
8-9 |
p. 1571-1574
4 p.
|
artikel
|
| 99 |
Optical contrast formation in amorphous silicon carbide with high-energy focused ion beams
|
Tsvetkova, T.
|
|
2009
|
267 |
8-9 |
p. 1583-1587
5 p.
|
artikel
|
| 100 |
Patterning of insulating surfaces by electronic excitation
|
Akcöltekin, S.
|
|
2009
|
267 |
8-9 |
p. 1386-1389
4 p.
|
artikel
|
| 101 |
Photo gallery
|
|
|
2009
|
267 |
8-9 |
p. viii-x
nvt p.
|
artikel
|
| 102 |
Photoluminescence induced by Si implantation into Si3N4 matrix
|
Bregolin, F.L.
|
|
2009
|
267 |
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p. 1314-1316
3 p.
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Photoluminescence induced from hot Ge implantation into SiO2
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Bregolin, F.L.
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2009
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267 |
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p. 1321-1323
3 p.
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artikel
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| 104 |
Point defects induced in ion irradiated 4H–SiC probed by exciton lines
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Litrico, G.
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2009
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267 |
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p. 1243-1246
4 p.
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artikel
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| 105 |
Radiation suppressed oxide growth in the system Ni–Ti–O
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Lutz, J.
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2009
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267 |
8-9 |
p. 1634-1637
4 p.
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artikel
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| 106 |
Radiation tolerance of fluorite-structured oxides subjected to swift heavy ion irradiation
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Garrido, Frédérico
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2009
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267 |
8-9 |
p. 1451-1455
5 p.
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artikel
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| 107 |
Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks
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Lindner, J.K.N.
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2009
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267 |
8-9 |
p. 1394-1397
4 p.
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artikel
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| 108 |
Response of materials to single ion events
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Zhang, Yanwen
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2009
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267 |
8-9 |
p. 1705-1712
8 p.
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artikel
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| 109 |
Self-organized formation of layered carbon–copper nanocomposite films by ion deposition
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Zutz, Hayo
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2009
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267 |
8-9 |
p. 1356-1359
4 p.
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artikel
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| 110 |
Simulation and fitting of high resolution Rutherford backscattering spectra
|
Borschel, Christian
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2009
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267 |
8-9 |
p. 1737-1739
3 p.
|
artikel
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| 111 |
Size effects of gas cluster ions on beam transport, amorphous layer formation and sputtering
|
Toyoda, Noriaki
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2009
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267 |
8-9 |
p. 1415-1419
5 p.
|
artikel
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| 112 |
Sputtering of thin benzene films by large noble gas clusters
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Rzeznik, L.
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2009
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267 |
8-9 |
p. 1436-1439
4 p.
|
artikel
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| 113 |
Strain-driven defect evolution in Sn+ implanted Si/SiGe multilayer structure
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Gaiduk, P.I.
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2009
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267 |
8-9 |
p. 1239-1242
4 p.
|
artikel
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| 114 |
Structural and magnetic characterization of plasma ion nitrided layer on 316L stainless steel alloy
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Öztürk, O.
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2009
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267 |
8-9 |
p. 1540-1545
6 p.
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artikel
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| 115 |
Structural changes of Si surfaces by nitrogen implantation using plasma based ion implantation
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Nakao, Setsuo
|
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2009
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267 |
8-9 |
p. 1303-1306
4 p.
|
artikel
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| 116 |
Structural study of Co and Au nanoclusters landed onto Cu
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Jiménez-Sáez, J.C.
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2009
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267 |
8-9 |
p. 1447-1450
4 p.
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artikel
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| 117 |
Study of crater formation and sputtering process with large gas cluster impact by molecular dynamics simulations
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Aoki, Takaaki
|
|
2009
|
267 |
8-9 |
p. 1424-1427
4 p.
|
artikel
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| 118 |
Study of selected differential cross-sections of the 28Si(d,p0,p1,p2,p3) reactions for NRA purposes
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Kokkoris, M.
|
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2009
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267 |
8-9 |
p. 1744-1747
4 p.
|
artikel
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| 119 |
Study of the damage produced in silicon carbide by high energy heavy ions
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Benyagoub, A.
|
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2009
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267 |
8-9 |
p. 1255-1258
4 p.
|
artikel
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| 120 |
Study of the d+ 11B system differential cross-sections for NRA purposes
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Kokkoris, M.
|
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2009
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267 |
8-9 |
p. 1740-1743
4 p.
|
artikel
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| 121 |
Surface modification behaviors of glass-like carbon by oxygen ion implantation
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Nakamura, Kazumasa
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2009
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267 |
8-9 |
p. 1642-1644
3 p.
|
artikel
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| 122 |
Surfactant Sputtering: Theory of a new method of surface nanostructuring by ion beams
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Kree, R.
|
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2009
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267 |
8-9 |
p. 1403-1406
4 p.
|
artikel
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| 123 |
Swift heavy ion induced modifications of optical and microstructural properties of silver–fullerene C60 nanocomposite
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Singhal, R.
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2009
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267 |
8-9 |
p. 1349-1352
4 p.
|
artikel
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| 124 |
Swift-heavy-ion-induced shaping of spherical Ge nanoparticles into disks and rods
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Schmidt, B.
|
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2009
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267 |
8-9 |
p. 1345-1348
4 p.
|
artikel
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| 125 |
Temperature behavior of damage in sapphire implanted with light ions
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Alves, E.
|
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2009
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267 |
8-9 |
p. 1464-1467
4 p.
|
artikel
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| 126 |
The correlation between electroluminescence properties and the microstructure of Europium-implanted MOS light emitting diodes
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Rebohle, L.
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2009
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267 |
8-9 |
p. 1324-1327
4 p.
|
artikel
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| 127 |
The effects of energy-loss straggling and elastic scattering models on Monte Carlo calculations of dose distribution functions for 10keV to 1MeV incident electrons in water
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Bousis, C.
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2009
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267 |
8-9 |
p. 1725-1732
8 p.
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artikel
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| 128 |
The halogen effect for Ni-base alloys – A new method for increasing the oxidation protection at high temperatures
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Zschau, Hans-Eberhard
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2009
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267 |
8-9 |
p. 1662-1665
4 p.
|
artikel
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| 129 |
The influence of annealing on manganese implanted GaAs films
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Bürger, Danilo
|
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2009
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267 |
8-9 |
p. 1626-1629
4 p.
|
artikel
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| 130 |
The influence of beam divergence on ion-beam induced surface patterns
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Kree, R.
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|
2009
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267 |
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p. 1407-1411
5 p.
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artikel
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| 131 |
Thermal and irradiation induced interdiffusion in Fe3O4/MgO(001) thin film
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Kim-Ngan, N.-T.H.
|
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2009
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267 |
8-9 |
p. 1484-1488
5 p.
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artikel
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| 132 |
Thirtieth Anniversary of Biannual International Conference on Ion Beam Modification of Materials, IBMM – From “Ion Implantation” to “Ion Beam Modification”
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Gyulai, J.
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2009
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267 |
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p. 1217-1221
5 p.
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artikel
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| 133 |
Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA
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Norarat, R.
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2009
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267 |
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p. 1650-1653
4 p.
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artikel
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| 134 |
Voltage–current characteristics of a high-power pulsed sputtering (HPPS) glow discharge and plasma density estimation
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Yukimura, Ken
|
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2009
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267 |
8-9 |
p. 1692-1695
4 p.
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artikel
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| 135 |
What is the significance of nitrogen-vacancy centers in the doping into diamond?
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Nakagawa, S.T.
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2009
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267 |
8-9 |
p. 1226-1228
3 p.
|
artikel
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| 136 |
XPS and NRA depth profiling of nitrogen and carbon simultaneously implanted into copper to synthesize C3N4 like compounds
|
Colaux, J.L.
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2009
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267 |
8-9 |
p. 1299-1302
4 p.
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artikel
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