| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of the charging phenomena during electron irradiation of sintered Si3N4
|
Guo, Hansheng
|
|
2001
|
173 |
4 |
p. 463-469
7 p.
|
artikel
|
| 2 |
Calculations of electron energy loss straggling
|
Mejaddem, Younes
|
|
2001
|
173 |
4 |
p. 397-410
14 p.
|
artikel
|
| 3 |
Conetrap: A compact electrostatic ion trap
|
Schmidt, Henning T.
|
|
2001
|
173 |
4 |
p. 523-527
5 p.
|
artikel
|
| 4 |
Determination of the stopping power of channeled protons in SiO2 in the backscattering geometry
|
Kokkoris, M.
|
|
2001
|
173 |
4 |
p. 411-416
6 p.
|
artikel
|
| 5 |
Diffusion and aggregation of Si implant in (100) single-crystal SrTiO3
|
Sakaguchi, Isao
|
|
2001
|
173 |
4 |
p. 436-440
5 p.
|
artikel
|
| 6 |
Equivalent dose determination from quartz additive dose optically stimulated luminescence: Simulation tests
|
Hong, D.G
|
|
2001
|
173 |
4 |
p. 533-540
8 p.
|
artikel
|
| 7 |
Fast helium atom beams generated by pulsing the nozzle-skimmer discharge of a thermal metastable helium atom source
|
Kurahashi, Mitsunori
|
|
2001
|
173 |
4 |
p. 516-522
7 p.
|
artikel
|
| 8 |
How precisely can the energy of a marker peak in an RBS spectrum be determined?
|
Bergsmann, M.
|
|
2001
|
173 |
4 |
p. 470-474
5 p.
|
artikel
|
| 9 |
Index
|
|
|
2001
|
173 |
4 |
p. 544-549
6 p.
|
artikel
|
| 10 |
Index
|
|
|
2001
|
173 |
4 |
p. 550-552
3 p.
|
artikel
|
| 11 |
Ion tracks in an organic material: Application of the liquid drop model
|
De Cicco, H.
|
|
2001
|
173 |
4 |
p. 455-462
8 p.
|
artikel
|
| 12 |
Material classification by fast neutron scattering
|
Buffler, A
|
|
2001
|
173 |
4 |
p. 483-502
20 p.
|
artikel
|
| 13 |
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
|
Gal, M
|
|
2001
|
173 |
4 |
p. 528-532
5 p.
|
artikel
|
| 14 |
Medium modified two-body scattering amplitude from proton–nucleus total cross-sections
|
Tripathi, R.K.
|
|
2001
|
173 |
4 |
p. 391-396
6 p.
|
artikel
|
| 15 |
Molecular dynamics simulation of mass transport processes in a Ni crystal with Al atoms as impurity under low energy ion bombardment
|
Kornich, G.V
|
|
2001
|
173 |
4 |
p. 417-426
10 p.
|
artikel
|
| 16 |
Monte Carlo simulation of concentration distribution at Ni3Al–5 at.% Mg grain boundary
|
Zheng, Li-Ping
|
|
2001
|
173 |
4 |
p. 441-446
6 p.
|
artikel
|
| 17 |
Raman scattering and XRD analysis in argon ion implanted CdS thin films prepared by vacuum evaporation
|
Senthil, K
|
|
2001
|
173 |
4 |
p. 475-482
8 p.
|
artikel
|
| 18 |
Scanning probe microscopy characterisation of masked low energy implanted nanometer structures
|
Winzell, Thomas
|
|
2001
|
173 |
4 |
p. 447-454
8 p.
|
artikel
|
| 19 |
Scattering of atoms and molecules off a barium zirconate surface
|
Jans, S
|
|
2001
|
173 |
4 |
p. 503-515
13 p.
|
artikel
|
| 20 |
Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si
|
Zhang, Yanwen
|
|
2001
|
173 |
4 |
p. 427-435
9 p.
|
artikel
|
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