| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accelerator mass spectrometry of 99Tc
|
Fifield, L.K.
|
|
2000
|
168 |
3 |
p. 427-436
10 p.
|
artikel
|
| 2 |
A comparative study of track registration characteristics of Makrofol-(KG, KL & N) polycarbonate to 136Xe ions
|
Kumar, Ashavani
|
|
2000
|
168 |
3 |
p. 411-416
6 p.
|
artikel
|
| 3 |
Charge equilibration of energetic He ions in the Si〈100〉 channel
|
Azevedo, G.de M.
|
|
2000
|
168 |
3 |
p. 321-328
8 p.
|
artikel
|
| 4 |
Comparative study of gas amplification and energy resolution in some argon-based mixtures
|
Krajcar Bronić, Ines
|
|
2000
|
168 |
3 |
p. 437-447
11 p.
|
artikel
|
| 5 |
Effective atomic numbers for photon energy absorption and energy dependence of some thermoluminescent dosimetric compounds
|
Shivaramu,
|
|
2000
|
168 |
3 |
p. 294-304
11 p.
|
artikel
|
| 6 |
Electrical and optical properties of carbon implanted In2O3 thin film
|
Hanamoto, K.
|
|
2000
|
168 |
3 |
p. 389-394
6 p.
|
artikel
|
| 7 |
Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination
|
Joo, M.H.
|
|
2000
|
168 |
3 |
p. 399-403
5 p.
|
artikel
|
| 8 |
Experimental study of angular dependence in double photon Compton scattering
|
Sandhu, B.S.
|
|
2000
|
168 |
3 |
p. 329-336
8 p.
|
artikel
|
| 9 |
H+ and He+ ions used as a RBS probe of thin defective layers in silicon. A Monte Carlo study
|
Mazzone, A.M.
|
|
2000
|
168 |
3 |
p. 417-421
5 p.
|
artikel
|
| 10 |
In situ observation of electron-beam-induced ripening of Ge clusters in thin SiO2 layers
|
Klimenkov, M.
|
|
2000
|
168 |
3 |
p. 367-374
8 p.
|
artikel
|
| 11 |
Investigation of 3He-induced reactions on natural Ti for nuclear analytical and radionuclide production purposes
|
Ditrói, F.
|
|
2000
|
168 |
3 |
p. 337-346
10 p.
|
artikel
|
| 12 |
Ion beam induced amorphous–crystalline phase transition in Si: Quantitative approach
|
Titov, Andrei I.
|
|
2000
|
168 |
3 |
p. 375-388
14 p.
|
artikel
|
| 13 |
Ion-implantation effects in Al2O3: X-ray fluorescence measurements
|
Kurmaev, E.Z.
|
|
2000
|
168 |
3 |
p. 395-398
4 p.
|
artikel
|
| 14 |
Monte Carlo simulation of particle-induced X-ray emission channeling spectra of GaAs crystals
|
Al-Turany, M.
|
|
2000
|
168 |
3 |
p. 362-366
5 p.
|
artikel
|
| 15 |
Mössbauer study of RF-sputtered Fe x N(x≈2) film
|
Cai, Yingwen
|
|
2000
|
168 |
3 |
p. 422-426
5 p.
|
artikel
|
| 16 |
Stopping power in anisotropic, magnetized electron plasmas
|
Walter, M.
|
|
2000
|
168 |
3 |
p. 347-361
15 p.
|
artikel
|
| 17 |
Stopping powers of C, Al, Ti, Cu, Nb and Ag for 16O and 19F ions
|
Xiting, Lu
|
|
2000
|
168 |
3 |
p. 287-293
7 p.
|
artikel
|
| 18 |
Superlinearity of synthetic quartz: Dependence on the firing temperature
|
Charitidis, C.
|
|
2000
|
168 |
3 |
p. 404-410
7 p.
|
artikel
|
| 19 |
Thick target γ-ray yields for light elements measured in the deuteron energy interval of 0.7–3.4 MeV
|
Elekes, Z.
|
|
2000
|
168 |
3 |
p. 305-320
16 p.
|
artikel
|
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