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                             77 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An ab initio molecular orbital study of the electron affinity of boron clusters Takeuchi, T
1999
153 1-4 p. 298-301
4 p.
artikel
2 An efficient molecular dynamics scheme for predicting dopant implant profiles in semiconductors Beardmore, Keith M.
1999
153 1-4 p. 391-397
7 p.
artikel
3 Anomalous electronic stopping and relaxation in the plasma and application of its theory to beam–surface interaction Mori, Ichiro
1999
153 1-4 p. 31-35
5 p.
artikel
4 Applications of genetic algorithms and neural networks to interatomic potentials Hobday, Steven
1999
153 1-4 p. 247-263
17 p.
artikel
5 Atomic-scale effects of sub-keV ions during growth and subsequent ion-beam analysis of molybdenum thin films Klaver, Peter
1999
153 1-4 p. 228-235
8 p.
artikel
6 A unitary convolution approximation for the impact-parameter dependent electronic energy loss Schiwietz, G.
1999
153 1-4 p. 1-9
9 p.
artikel
7 Boron erosion and carbon deposition due to simultaneous bombardment with deuterium and carbon ions in plasmas Ohya, K
1999
153 1-4 p. 52-57
6 p.
artikel
8 Calculations of differential cross-section for collisions of noble gas ions with carbon atoms in C60 Muramoto, T
1999
153 1-4 p. 275-279
5 p.
artikel
9 Carbon implantation into tungsten at elevated temperatures Eckstein, W.
1999
153 1-4 p. 415-421
7 p.
artikel
10 Cascade collision of Fe-atom caused by low energy He-incidence and effect of temperature to the type of defect Mori, Ichiro
1999
153 1-4 p. 126-129
4 p.
artikel
11 Cluster formation dynamics in a locally-confined gas layer mixed with the plume ablated by pulsed laser irradiation Han, Min
1999
153 1-4 p. 302-308
7 p.
artikel
12 Cluster size dependence of the impact process on a carbon substrate Aoki, Takaaki
1999
153 1-4 p. 264-269
6 p.
artikel
13 Comparison of gold and carbon cluster impacts on graphite using Molecular Dynamics simulation Webb, Roger
1999
153 1-4 p. 284-291
8 p.
artikel
14 Computer simulation of above-surface neutralization of highly charged ions approaching a metal surface Mirakhmedov, M.N.
1999
153 1-4 p. 236-241
6 p.
artikel
15 Computer simulation of displacement cascades and the defects they generate in metals Bacon, D.J.
1999
153 1-4 p. 87-98
12 p.
artikel
16 Computer simulation of image acceleration of highly charged xenon ions in front of a metal surface Yamamura, Y
1999
153 1-4 p. 242-246
5 p.
artikel
17 Computer simulation of sputtering and implantation processes under grazing ion bombardment of binary crystal surface Dzhurakhalov, A.A.
1999
153 1-4 p. 326-330
5 p.
artikel
18 Computer simulation of sputtering of gold targets using Sb and Sb2 ions Webb, Roger
1999
153 1-4 p. 309-313
5 p.
artikel
19 Computer simulation of the reflection of energetic ions from crystal surfaces at glancing incidence Danailov, Daniel
1999
153 1-4 p. 191-198
8 p.
artikel
20 Computer studies on reflection and sputtering due to low-energy cluster impacts Yorizane, K
1999
153 1-4 p. 292-297
6 p.
artikel
21 Continuum treatment of spatial correlation in damage annealing Hobler, G.
1999
153 1-4 p. 172-176
5 p.
artikel
22 Contribution of the surface mechanism to sputtering of (001) Ni: molecular dynamics computer simulation studies Samoilov, V.N.
1999
153 1-4 p. 319-325
7 p.
artikel
23 Coulomb explosion patterns for swift hydrogen molecular ions penetrating through solids Wang, You-Nian
1999
153 1-4 p. 26-30
5 p.
artikel
24 Cutting, compression and shear of silicon small single crystals Doyama, Masao
1999
153 1-4 p. 147-152
6 p.
artikel
25 Defect creation by low-energy ion bombardment on GaAs (001) and Ge (001) surfaces Kuronen, A.
1999
153 1-4 p. 209-212
4 p.
artikel
26 Defect production and damage evolution in Al: a molecular dynamics and Monte Carlo computer simulation Almazouzi, A.
1999
153 1-4 p. 105-115
11 p.
artikel
27 Dependence of energy distributions of sputtered and reflected atoms on incident fluence Eckstein, W
1999
153 1-4 p. 345-349
5 p.
artikel
28 Distortion of crystal lattice conditioned by beam implanted atoms Nb, Mo, W in α-Fe Baranov, M.A
1999
153 1-4 p. 153-156
4 p.
artikel
29 Dynamic MC simulation of low-energy ion implantation Yamamura, Y.
1999
153 1-4 p. 410-414
5 p.
artikel
30 Dynamic MC simulation of nitrogen implanted Si/C and Zr/C bilayers Miyagawa, Y
1999
153 1-4 p. 422-428
7 p.
artikel
31 Dynamic Monte Carlo simulation for SIMS depth profiling of delta-doped layer Kang, H.J.
1999
153 1-4 p. 429-435
7 p.
artikel
32 Editorial 1999
153 1-4 p. VII-
1 p.
artikel
33 Effect of additional minor element on radiation-induced grain boundary segregation in austenitic stainless steel under electron irradiation Sakaguchi, N
1999
153 1-4 p. 142-146
5 p.
artikel
34 Electronic energy loss of slow projectiles evaluated by molecular orbital theory Kato, Masahiko
1999
153 1-4 p. 36-41
6 p.
artikel
35 Energy loss of molecular ions penetrating solids Takamoto, Tamotsu
1999
153 1-4 p. 21-25
5 p.
artikel
36 Energy-loss of swift boron and carbon clusters in solids Kaneko, Toshiaki
1999
153 1-4 p. 15-20
6 p.
artikel
37 Heat spike and ballistic contributions to mixing in Si Tarus, J
1999
153 1-4 p. 378-382
5 p.
artikel
38 Higher moments of the implanted-ion profiles of bismuth in silicon Liang, J.H.
1999
153 1-4 p. 436-441
6 p.
artikel
39 How accurate the first-principles calculations can be applied to nuclear reactor materials research? Kawazoe, Y.
1999
153 1-4 p. 77-86
10 p.
artikel
40 Impact-induced chemisorption of C2H2 on diamond(001) surfaces: a molecular dynamics simulation Zhu, Wenjun
1999
153 1-4 p. 213-217
5 p.
artikel
41 Impact-parameter dependent stopping powers for MeV He ions in Si crystals Yamamoto, Y
1999
153 1-4 p. 10-14
5 p.
artikel
42 Index 1999
153 1-4 p. 467-472
6 p.
artikel
43 Lattice location of Tm in Si and Ge determined from ion channeling followed by Monte Carlo simulations Yamamoto, Y.
1999
153 1-4 p. 452-456
5 p.
artikel
44 MD simulation of atomic displacements in metals and metallic bilayers under low energy ion bombardment at 300 K Kornich, G.V.
1999
153 1-4 p. 383-390
8 p.
artikel
45 Modeling of the radiation-induced microstructural evolution in ionic crystals Dubinko, V.I.
1999
153 1-4 p. 163-166
4 p.
artikel
46 Modelling radiation effects at grain boundaries in bcc iron Pérez Pérez, F.Javier
1999
153 1-4 p. 136-141
6 p.
artikel
47 Molecular dynamics analysis of volume change in a nuclear glass model subjected to a displacement cascade Delaye, J.-M
1999
153 1-4 p. 157-162
6 p.
artikel
48 Molecular Dynamics simulation of the desorption of molecules by energetic fullerene impacts on graphite and diamond surfaces Kerford, M
1999
153 1-4 p. 270-274
5 p.
artikel
49 Molecular dynamics simulations of collisional energy transport and sputtering in a condensed gas solid Bringa, E.M.
1999
153 1-4 p. 64-70
7 p.
artikel
50 Molecular dynamics study of C60–graphite interaction Man, Zhenyong
1999
153 1-4 p. 280-283
4 p.
artikel
51 Molecular-dynamics study of the decomposition of an unstable Ni–Ag alloy Colla, Thomas J.
1999
153 1-4 p. 369-377
9 p.
artikel
52 Monte Carlo simulation of kinetic electron emission from metal due to impact of heavy ions Kawata, J
1999
153 1-4 p. 42-46
5 p.
artikel
53 Monte Carlo simulation of point-defect behavior in cascade Morioka, Tomoaki
1999
153 1-4 p. 130-135
6 p.
artikel
54 Monte Carlo simulation of point defects in BCC iron Itakura, M
1999
153 1-4 p. 122-125
4 p.
artikel
55 Monte Carlo simulation of slow-electron cascade in potential electron emission Nishimura, K
1999
153 1-4 p. 47-51
5 p.
artikel
56 Numerical simulation for H+ ion–surface scattering under grazing incidence Song, Yuan-Hong
1999
153 1-4 p. 186-190
5 p.
artikel
57 Oxygen adsorption on GaAs(001) surface by edge-effect rainbow enhancement in ion scattering using the three-atom scattering model Takeuchi, Wataru
1999
153 1-4 p. 218-222
5 p.
artikel
58 Phase transition at low fluences in laser desorption of organic solids: a molecular dynamics study Kodali, Prasad B.S
1999
153 1-4 p. 167-171
5 p.
artikel
59 Recoil ranges in ion-induced collision cascades Colla, Thomas J.
1999
153 1-4 p. 361-368
8 p.
artikel
60 Rutherford backscattering from layered structures beyond the single scattering model Eckstein, W.
1999
153 1-4 p. 337-344
8 p.
artikel
61 Secondary electron emission from plasma facing materials and its impact on sheath voltage Ohya, Kaoru
1999
153 1-4 p. 58-63
6 p.
artikel
62 Shell correction of screening length in interatomic potential Yamamura, Y
1999
153 1-4 p. 71-76
6 p.
artikel
63 Simulation and experimental studies of impurity release from tungsten exposed to edge plasmas in TEXTOR-94 Ohya, K
1999
153 1-4 p. 354-360
7 p.
artikel
64 Simulation of beam steering phenomena in bent crystals Biryukov, Valery
1999
153 1-4 p. 461-466
6 p.
artikel
65 Simulation of channeling in crystals with defects using the CASSIS code Kling, A.
1999
153 1-4 p. 457-460
4 p.
artikel
66 Simulation of threshold displacements in NiAl Tianmin, Wang
1999
153 1-4 p. 99-104
6 p.
artikel
67 Simulation studies of chemical erosion on carbon based materials at elevated temperatures Kenmotsu, T.
1999
153 1-4 p. 350-353
4 p.
artikel
68 Single collision focusing and the angular distribution of sputtering from Zr(0001) Williams, G.J
1999
153 1-4 p. 314-318
5 p.
artikel
69 Sputtering yield calculations using an interatomic potential with the shell effect and a new local model Li, Zhijie
1999
153 1-4 p. 331-336
6 p.
artikel
70 Structure analysis of NiAl(001) surface using computer simulation of 180° NICISS Takeuchi, Wataru
1999
153 1-4 p. 223-227
5 p.
artikel
71 Surface processing with ionized cluster beams: computer simulation Insepov, Z.
1999
153 1-4 p. 199-208
10 p.
artikel
72 Swelling restriction as result of peculiarities of void evolution Selishchev, P.A.
1999
153 1-4 p. 177-182
6 p.
artikel
73 Temporal and spatial evolution of dislocation and void structures under cascade damage production Dubinko, Vladimir I.
1999
153 1-4 p. 116-121
6 p.
artikel
74 The energy straggling of ions implanted into a crystalline target and its effect on the lateral distribution Nakagawa, S.T.
1999
153 1-4 p. 446-451
6 p.
artikel
75 Transversal range straggling of 40 keV–2 MeV tungsten ions implanted in SiO2 Chiu, W.J
1999
153 1-4 p. 442-445
4 p.
artikel
76 TRIM-DYNAMIC applied to marker broadening and SIMS depth profiling Biersack, Jochen
1999
153 1-4 p. 398-409
12 p.
artikel
77 Vibrational analysis of optical phonons in mixed chromite spinels Sinha, M.M
1999
153 1-4 p. 183-185
3 p.
artikel
                             77 gevonden resultaten
 
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