| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Monte Carlo algorithm for the Vavilov distribution
|
Yi, Chul-Young
|
|
1999
|
149 |
3 |
p. 263-271
9 p.
|
artikel
|
| 2 |
Azimuthal effects in charge exchange processes during interaction of Ne+, Na+, F+ ions with a NaCl (100) surface
|
Benoit-Cattin, P.
|
|
1999
|
149 |
3 |
p. 257-262
6 p.
|
artikel
|
| 3 |
Damage of ion irradiated C60 films
|
Zawislak, F.C
|
|
1999
|
149 |
3 |
p. 336-342
7 p.
|
artikel
|
| 4 |
Depth profiles and amorphization behavior under channeling conditions for low energy Bi ions implanted into Si crystals
|
de M. Azevedo, G
|
|
1999
|
149 |
3 |
p. 301-311
11 p.
|
artikel
|
| 5 |
Erratum
|
|
|
1999
|
149 |
3 |
p. 368-
1 p.
|
artikel
|
| 6 |
Evidence of shallow positron traps in ion-implanted InP observed by maximum entropy reconstruction of positron lifetime distribution: a test of MELT
|
Chen, Z.Q.
|
|
1999
|
149 |
3 |
p. 343-352
10 p.
|
artikel
|
| 7 |
Fragmentation lifetimes and the internal energy of sputtered clusters
|
Wucher, A.
|
|
1999
|
149 |
3 |
p. 285-293
9 p.
|
artikel
|
| 8 |
Importance of the multicenter character of molecular aggregates in the theoretical description of the charge transfer process
|
Corchs, S.E.
|
|
1999
|
149 |
3 |
p. 247-256
10 p.
|
artikel
|
| 9 |
Iodine penetration and doping of ion-modified polyethylene
|
Švorčı́k, V
|
|
1999
|
149 |
3 |
p. 312-318
7 p.
|
artikel
|
| 10 |
Light-emitting materials fabricated by dual implantation of Si and N into SiO2 films
|
Zhao, J.
|
|
1999
|
149 |
3 |
p. 325-330
6 p.
|
artikel
|
| 11 |
Li+ grafting of ion irradiated polyethylene
|
Švorčı́k, V.
|
|
1999
|
149 |
3 |
p. 331-335
5 p.
|
artikel
|
| 12 |
MeV 4He++ channeling studies of epitaxially grown Pt films on Al2O3(0001)
|
Song, J.H.
|
|
1999
|
149 |
3 |
p. 361-367
7 p.
|
artikel
|
| 13 |
Protactinium determination in manganese crust VA13/2 by thermal ionization mass spectrometry (TIMS)
|
Fietzke, J
|
|
1999
|
149 |
3 |
p. 353-360
8 p.
|
artikel
|
| 14 |
Structural modifications in silicon irradiated successively by N+ and He+ or Ar8+ and He+ ions
|
Reutov, V.F.
|
|
1999
|
149 |
3 |
p. 319-324
6 p.
|
artikel
|
| 15 |
The cascade effect on the light emission from an aluminum surface produced by ion bombardment 1 1 Work supported by the National Science Council of the ROC (NSC86-2112-M008-011).
|
Lee, Chin Shuang
|
|
1999
|
149 |
3 |
p. 294-300
7 p.
|
artikel
|
| 16 |
Transport theory of sputtering I: Depth of origin of sputtered atoms
|
Zhang, Zhu Lin
|
|
1999
|
149 |
3 |
p. 272-284
13 p.
|
artikel
|
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