| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AFM surface investigation of polyethylene modified by ion bombardment
|
Švorčı́k, V.
|
|
1998
|
142 |
3 |
p. 349-354
6 p.
|
artikel
|
| 2 |
A round robin experiment of elemental sensitivity factors in low-energy ion scattering
|
Brongersma, H.H.
|
|
1998
|
142 |
3 |
p. 377-386
10 p.
|
artikel
|
| 3 |
Development and characterization of a neutron tomography system based on image intensifier/CCD system
|
Sinha, Amar
|
|
1998
|
142 |
3 |
p. 425-431
7 p.
|
artikel
|
| 4 |
Development of an rf driven multicusp ion source for nuclear science experiments 1 This work was supported by the Director, Office of Energy Research, Office of High Energy Physics and Nuclear Physics Division of the US Department of Energy under contract No. DE-AC03-76SFF00098. 1
|
Wutte, D
|
|
1998
|
142 |
3 |
p. 409-416
8 p.
|
artikel
|
| 5 |
Escape probability of low energy electrons and positrons emitted in random directions beneath a plane solid surface
|
Liljequist, D.
|
|
1998
|
142 |
3 |
p. 295-307
13 p.
|
artikel
|
| 6 |
Feasibility of a cylindrical mirror electron analyzer for structural analysis of crystalline materials using weak ion beams
|
Kudo, Hiroshi
|
|
1998
|
142 |
3 |
p. 402-408
7 p.
|
artikel
|
| 7 |
Gas amplification and ionization coefficients in isobutane and argon–isobutane mixtures at low gas pressures
|
Krajcar Bronić, Ines
|
|
1998
|
142 |
3 |
p. 219-244
26 p.
|
artikel
|
| 8 |
Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis
|
Wu, M.F
|
|
1998
|
142 |
3 |
p. 355-360
6 p.
|
artikel
|
| 9 |
Lattice strain measurement of strained In0.1Ga0.9As/GaAs heterostructures by RBS and channeling
|
Siddiqui, Azher M.
|
|
1998
|
142 |
3 |
p. 387-392
6 p.
|
artikel
|
| 10 |
Microstructural investigation of ion beam synthesised germanium nanoclusters embedded in SiO2 layers
|
Markwitz, A
|
|
1998
|
142 |
3 |
p. 338-348
11 p.
|
artikel
|
| 11 |
On the condensed history technique for electron transport
|
Kawrakow, I.
|
|
1998
|
142 |
3 |
p. 253-280
28 p.
|
artikel
|
| 12 |
Oxygen distribution in the heteroepitaxially grown Y2O3 films on Si substrates
|
Kim, H.B.
|
|
1998
|
142 |
3 |
p. 393-396
4 p.
|
artikel
|
| 13 |
Pillar defects, a new type of track in Pb-irradiated Bi-2212 thin films: Nanostructural study and influence on the irreversibility line
|
Hébert, S.
|
|
1998
|
142 |
3 |
p. 319-328
10 p.
|
artikel
|
| 14 |
Preferential effects in low-energy Si bombardment of SiC
|
Hensel, Hartmut
|
|
1998
|
142 |
3 |
p. 287-294
8 p.
|
artikel
|
| 15 |
Pulsed gas injection for X-ray spectroscopy of highly charged ions stored in the magnetic trapping mode of an electron beam ion trap
|
Schweikhard, L
|
|
1998
|
142 |
3 |
p. 245-252
8 p.
|
artikel
|
| 16 |
Pulse-shape discrimination in neutron depth profiling technique
|
Vacı́k, J.
|
|
1998
|
142 |
3 |
p. 397-401
5 p.
|
artikel
|
| 17 |
Refractive index behaviors of helium implanted optical planar waveguides in LiNbO3, KTiOPO4 and Li2B4O7
|
Bindner, P
|
|
1998
|
142 |
3 |
p. 329-337
9 p.
|
artikel
|
| 18 |
SIMS depth profile correction for the study of the first step of the diffusion of boron in silicon
|
Gautier, B.
|
|
1998
|
142 |
3 |
p. 361-376
16 p.
|
artikel
|
| 19 |
The electroluminescence from porous β-SiC formed on C+ implanted silicon
|
Li, Ning-Sheng
|
|
1998
|
142 |
3 |
p. 308-312
5 p.
|
artikel
|
| 20 |
Theoretical model and computer simulation results of enhanced diffusion of high-temperature implanted aluminum in silicon carbide
|
Gadiyak, G.V.
|
|
1998
|
142 |
3 |
p. 313-318
6 p.
|
artikel
|
| 21 |
Time-of-flight spectrometry applied to 2 MeV He RBS
|
Döbeli, M.
|
|
1998
|
142 |
3 |
p. 417-424
8 p.
|
artikel
|
| 22 |
Triply differential cross section for ionization of multielectronic targets
|
Sánchez, M.D.
|
|
1998
|
142 |
3 |
p. 281-286
6 p.
|
artikel
|
| 23 |
X-ray diffraction by standing surface acoustic waves
|
Roshchupkin, D.V
|
|
1998
|
142 |
3 |
p. 432-436
5 p.
|
artikel
|
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