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                             31 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Axial dechanneling in compound crystals with point defects and defect analysis by RBS Gärtner, K.
1997
132 1 p. 147-158
artikel
2 Broad-band hard X-ray reflectors Joensen, Karsten Dan
1997
132 1 p. 221-227
artikel
3 Calculation and experimental determination of dimensions of hardening and tempering zones in quenched U7A steel irradiated with a pulsed electron beam Markov, A.B.
1997
132 1 p. 79-86
artikel
4 Calculations of neutron transport through a simulated waste matrix Womble, P.C.
1997
132 1 p. 123-134
artikel
5 Calendar 1997
132 1 p. 229-230
artikel
6 Direct observation of lattice strain in Si 1−x Ge x Si crystals using planar channeling patterns Breese, M.B.H.
1997
132 1 p. 177-187
artikel
7 Editorial Board 1997
132 1 p. ii-iii
artikel
8 Effect of ion bombardment on the Tl-response of both LiF (TLD-100) and a home-made LiF: Mg,Cu,P phosphors Abdel-Hamid, H.M.
1997
132 1 p. 119-122
artikel
9 Energy loss of 10 MeV/amu atomic helium in carbon Ogawa, H.
1997
132 1 p. 36-40
artikel
10 Fast fluorescence decay of naphthalene induced by Ar ion irradiation Taguchi, Mitsumasa
1997
132 1 p. 135-141
artikel
11 Frequency dependence on temperature of AC conductance in silicon detectors Croitoru, N.
1997
132 1 p. 199-206
artikel
12 Functional behaviour of solar bleached thermoluminescence in calcites Liritzis, I.
1997
132 1 p. 87-92
artikel
13 High current Ni-ion implantation into Al films Gao, K.Y.
1997
132 1 p. 68-72
artikel
14 High frequency electro-acoustic chopper for synchrotron radiation Tucoulou, R.
1997
132 1 p. 207-213
artikel
15 H+ secondary ions emission stimulated by impact of energetic ions on heated target Barros Leite, C.V.
1997
132 1 p. 55-60
artikel
16 Intercomparison of photon dose measurements at the 8 MeV electron accelerator Angelescu, T.
1997
132 1 p. 193-198
artikel
17 Isotropy of ion-induced electron emission from crystal targets bombarded with MeV ions Kudo, Hiroshi
1997
132 1 p. 41-44
artikel
18 Lattice location of N in ZnSe by channeling-NRA Kobayashi, H.
1997
132 1 p. 142-146
artikel
19 Measurement of general etch rate for CR-39 plastic at short distance scale He, Y.D.
1997
132 1 p. 109-113
artikel
20 Multiple scattering in inelastic X-ray scattering spectroscopy: A Monte-Carlo study Felsteiner, J.
1997
132 1 p. 1-10
artikel
21 On light suppressed divacancy formation at photon assisted ion implantation of silicon Barabanenkov, M.Yu.
1997
132 1 p. 73-78
artikel
22 Photon-tagged nuclear reaction analysis for trace element determination Kristiansson, Per
1997
132 1 p. 159-176
artikel
23 Raman scattering and optical absorption studies of Ar+ implanted CdS thin films Narayanan, K.L.
1997
132 1 p. 61-67
artikel
24 Range parameters of bismuth ions in polystyrene Liang, J.H.
1997
132 1 p. 29-35
artikel
25 Repulsive interatomic potentials calculated using Hartree-Fock and density-functional theory methods Nordlund, K.
1997
132 1 p. 45-54
artikel
26 Self-neutralized ion implantation into insulators Liu, F.
1997
132 1 p. 188-192
artikel
27 Stopping power of Nd ions in Pb determined from γ-ray lineshape analysis in Coulomb excitation Brandolini, F.
1997
132 1 p. 11-17
artikel
28 The Brandt-Kitagawa heavy ion model: Embedding in the homogeneous electron gas Mathar, Richard J.
1997
132 1 p. 18-28
artikel
29 The use of the EGS4-PRESTA code for the thermoluminescent dosemeter response simulation Isabey, R.
1997
132 1 p. 114-118
artikel
30 Track separation due to dissociation of MeV C60 inside a solid Dunlop, A.
1997
132 1 p. 93-108
artikel
31 Use of the Hough transform to determine the center of digitized X-ray diffraction patterns Dammer, Christoph
1997
132 1 p. 214-220
artikel
                             31 gevonden resultaten
 
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