| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AFM surface morphology investigation of ion beam modified polyimide
|
Švorčík, V.
|
|
1997
|
122 |
4 |
p. 663-667
5 p.
|
artikel
|
| 2 |
Author index
|
|
|
1997
|
122 |
4 |
p. 703-713
11 p.
|
artikel
|
| 3 |
Calculations of heavy ion track structure and energy deposition distribution in liquid water
|
Li Qiang,
|
|
1997
|
122 |
4 |
p. 657-662
6 p.
|
artikel
|
| 4 |
Calendar
|
|
|
1997
|
122 |
4 |
p. 701-702
2 p.
|
artikel
|
| 5 |
Coherent X-ray radiation of 5.7 MeV electrons from a (002) mosaic pyrolytic graphite crystal
|
Kaplin, V.V.
|
|
1997
|
122 |
4 |
p. 625-629
5 p.
|
artikel
|
| 6 |
Collision cascades and sputter fluxes in bounded random media
|
Glazov, Lev G.
|
|
1997
|
122 |
4 |
p. 611-624
14 p.
|
artikel
|
| 7 |
Erratum to: “Damage profiles in as-implanted 〈100〉 Si crystals: strain by X-ray diffractometry versus interstitials by RBS-channeling” [Nucl. Instr. and Meth. B 120 (1996) 64–67]
|
Nipoti, R.
|
|
1997
|
122 |
4 |
p. 699-
1 p.
|
artikel
|
| 8 |
Influence of vacancy mobility and volume size mismatch energy on the lattice site occupation of implanted species in beryllium single crystals
|
Hanßmann, J.
|
|
1997
|
122 |
4 |
p. 635-638
4 p.
|
artikel
|
| 9 |
Ion beam analysis of HTc superconducting Tl-based films
|
Andrade, E.
|
|
1997
|
122 |
4 |
p. 677-684
8 p.
|
artikel
|
| 10 |
K-vacancy production by secondaries due to charged projectiles in thick targets
|
Onegin, M.S.
|
|
1997
|
122 |
4 |
p. 696-698
3 p.
|
artikel
|
| 11 |
Light element detection in heavy matrices by high energy backscattering spectroscopy
|
Markwitz, A.
|
|
1997
|
122 |
4 |
p. 685-688
4 p.
|
artikel
|
| 12 |
Modification of nanometer scale wear of nitrogen-containing carbon films due to ion implantation
|
Miyake, Shojiro
|
|
1997
|
122 |
4 |
p. 643-649
7 p.
|
artikel
|
| 13 |
Radiation induced electromotive force in mineral insulated cable under reactor irradiation
|
Shikama, Tatsuo
|
|
1997
|
122 |
4 |
p. 650-656
7 p.
|
artikel
|
| 14 |
Rapid thermal annealing of arsenic implanted Si1−x Ge x epilayers
|
Zou, Lyu-fan
|
|
1997
|
122 |
4 |
p. 639-642
4 p.
|
artikel
|
| 15 |
RBS-channeling determination of damage profiles in fully relaxed Si0.76Ge0.24 implanted with 2 MeV Si ions
|
Bianconi, M.
|
|
1997
|
122 |
4 |
p. 689-695
7 p.
|
artikel
|
| 16 |
Recombination luminescence of rare gas crystals
|
Kink, M.
|
|
1997
|
122 |
4 |
p. 668-676
9 p.
|
artikel
|
| 17 |
Strained SiGe-alloy layers formed by solid phase epitaxial growth of Ge+ ion implanted silicon
|
Songsiriritthigul, P.
|
|
1997
|
122 |
4 |
p. 630-634
5 p.
|
artikel
|
| 18 |
Subject index
|
|
|
1997
|
122 |
4 |
p. 715-719
5 p.
|
artikel
|
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