| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced eclipse pulsed laser deposition method for growth of perovskite crystals and relatives
|
Morita, Eiichi
|
|
1997
|
121 |
1-4 |
p. 412-414
3 p.
|
artikel
|
| 2 |
AFM observations of DLC films prepared by the ECR sputtering method
|
Kamijo, E.
|
|
1997
|
121 |
1-4 |
p. 110-115
6 p.
|
artikel
|
| 3 |
An evaluation method for a high concentration profile produced in very low energy doping processes
|
Takase, M.
|
|
1997
|
121 |
1-4 |
p. 288-290
3 p.
|
artikel
|
| 4 |
Application of nitrogen implantation to ULSI
|
Murakami, Takashi
|
|
1997
|
121 |
1-4 |
p. 257-261
5 p.
|
artikel
|
| 5 |
Atomistic modeling of crystal-defect mobility and interactions
|
Bulatov, V.
|
|
1997
|
121 |
1-4 |
p. 251-256
6 p.
|
artikel
|
| 6 |
Author index
|
|
|
1997
|
121 |
1-4 |
p. 525-534
10 p.
|
artikel
|
| 7 |
Behavior of radiation-induced defects and amorphization in silicon crystal
|
Baba, A.
|
|
1997
|
121 |
1-4 |
p. 299-301
3 p.
|
artikel
|
| 8 |
Bis(ethynylstyryl)benzene films grown by molecular beam deposition in a photon field
|
Fuchigami, H.
|
|
1997
|
121 |
1-4 |
p. 422-426
5 p.
|
artikel
|
| 9 |
Carbon nitride thin films formed by low energy ion beam deposition with positive and negative ions
|
Enders, B.
|
|
1997
|
121 |
1-4 |
p. 73-78
6 p.
|
artikel
|
| 10 |
Characterization and removal of residual defects in high dose, very low energy BF2 +-implanted (001) Si
|
Yang, J.J.
|
|
1997
|
121 |
1-4 |
p. 291-294
4 p.
|
artikel
|
| 11 |
Characterization of carbon films produced by laser ablation of graphite in helium and nitrogen gas atmosphere
|
Saito, K.
|
|
1997
|
121 |
1-4 |
p. 400-403
4 p.
|
artikel
|
| 12 |
Characterization of ion implanted TiN films
|
Oda, K.
|
|
1997
|
121 |
1-4 |
p. 283-287
5 p.
|
artikel
|
| 13 |
Cohesive energy effects on the atomic transport induced by ion beam mixing
|
Chang, G.S.
|
|
1997
|
121 |
1-4 |
p. 244-250
7 p.
|
artikel
|
| 14 |
Computer simulation of crystal surface modification by accelerated cluster ion impacts
|
Insepov, Z.
|
|
1997
|
121 |
1-4 |
p. 44-48
5 p.
|
artikel
|
| 15 |
Controlling the molecular orientation of liquid crystalline polymer films deposited by polarized-laser chemical vapor deposition
|
Itadani, Toshiaki
|
|
1997
|
121 |
1-4 |
p. 415-418
4 p.
|
artikel
|
| 16 |
Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy
|
Kobayashi, N.
|
|
1997
|
121 |
1-4 |
p. 199-202
4 p.
|
artikel
|
| 17 |
Deposition of NiTiN nano-composite films by cathodic arc ion-plating
|
Irie, M.
|
|
1997
|
121 |
1-4 |
p. 133-136
4 p.
|
artikel
|
| 18 |
Editorial Board
|
|
|
1997
|
121 |
1-4 |
p. ii-iii
nvt p.
|
artikel
|
| 19 |
Effect of oxygen adsorption on ion beam induced recrystallization of copper films
|
Hishita, S.
|
|
1997
|
121 |
1-4 |
p. 157-161
5 p.
|
artikel
|
| 20 |
Effects of accelerated ion beam deposition to form thin metal films on silicon
|
Iida, S.
|
|
1997
|
121 |
1-4 |
p. 162-165
4 p.
|
artikel
|
| 21 |
Effects of ion-implantation with nitrogen ion on microstructures in deformed iron
|
Yamamoto, A.
|
|
1997
|
121 |
1-4 |
p. 275-278
4 p.
|
artikel
|
| 22 |
ERDA analysis of the depth distribution of deuterium in ion-irradiated nickel
|
Mitamura, Tohru
|
|
1997
|
121 |
1-4 |
p. 271-274
4 p.
|
artikel
|
| 23 |
Evaluation of the gate oxide transformed by ion implantation
|
Mameno, Kazunobu
|
|
1997
|
121 |
1-4 |
p. 311-314
4 p.
|
artikel
|
| 24 |
Exposure of spacecraft polymers to energetic ions, electrons and ultraviolet light
|
Tahara, Hirokazu
|
|
1997
|
121 |
1-4 |
p. 446-449
4 p.
|
artikel
|
| 25 |
Fabrication of PbTiO3 thin films by laser metalorganic chemical vapor deposition
|
Tokita, Koji
|
|
1997
|
121 |
1-4 |
p. 408-411
4 p.
|
artikel
|
| 26 |
Formation of an ohmic electrode in SiC using a pulsed laser irradiation method
|
Eryu, Osamu
|
|
1997
|
121 |
1-4 |
p. 419-421
3 p.
|
artikel
|
| 27 |
Formation of metallic nanophases in insulators by high-energy ion-beam mixing
|
Thomé, Lionel
|
|
1997
|
121 |
1-4 |
p. 237-243
7 p.
|
artikel
|
| 28 |
Fullerene ion irradiation to silicon
|
Tanomura, M.
|
|
1997
|
121 |
1-4 |
p. 480-483
4 p.
|
artikel
|
| 29 |
Future trends for large-area pulsed laser deposition
|
Greer, J.A.
|
|
1997
|
121 |
1-4 |
p. 357-362
6 p.
|
artikel
|
| 30 |
Germanium nanostructures deposited by the cluster-beam evaporation technique
|
Nozaki, S.
|
|
1997
|
121 |
1-4 |
p. 455-458
4 p.
|
artikel
|
| 31 |
Gold-carbon composite thin films for electrochemical gas sensor prepared by reactive plasma sputtering
|
Okamoto, A.
|
|
1997
|
121 |
1-4 |
p. 179-183
5 p.
|
artikel
|
| 32 |
Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam deposition
|
Choi, S.C.
|
|
1997
|
121 |
1-4 |
p. 170-174
5 p.
|
artikel
|
| 33 |
High fluence implantation of nitrogen into titanium: Fluence dependence of sputtering yield, retained fluence and nitrogen depth profile
|
Miyagawa, Y.
|
|
1997
|
121 |
1-4 |
p. 340-344
5 p.
|
artikel
|
| 34 |
High resolution transmission electron microscope study of solid phase epitaxial growth of very high dose, low energy P+ implanted (001) Si
|
Yang, J.J.
|
|
1997
|
121 |
1-4 |
p. 195-198
4 p.
|
artikel
|
| 35 |
Improved ion beam deposition system with RF sputter-type ion source
|
Miyake, Kiyoshi
|
|
1997
|
121 |
1-4 |
p. 102-106
5 p.
|
artikel
|
| 36 |
Incident angle dependence of the sputtering effect of Ar-cluster-ion bombardment
|
Kitani, H.
|
|
1997
|
121 |
1-4 |
p. 489-492
4 p.
|
artikel
|
| 37 |
Inhomogeneous optical SiO x N y thin films prepared by ion assisted deposition
|
Cho, H.J.
|
|
1997
|
121 |
1-4 |
p. 137-140
4 p.
|
artikel
|
| 38 |
In-situ ion-beam annealing of damage in GaAs during O implantation and O-site determination by 18O(p,α) 15N nuclear reaction
|
Nakata, Jyoji
|
|
1997
|
121 |
1-4 |
p. 306-310
5 p.
|
artikel
|
| 39 |
Interface structure between polyimide film substrate and copper film prepared by ion beam and vapor deposition (IVD) method
|
Ebe, Akinori
|
|
1997
|
121 |
1-4 |
p. 207-211
5 p.
|
artikel
|
| 40 |
Introduction to the Applied Laser Engineering Center (ALEC)
|
Fukatsu, Kenichi
|
|
1997
|
121 |
1-4 |
p. 7-9
3 p.
|
artikel
|
| 41 |
Investigation of ion bombarded polymer surfaces using SIMS, XPS and AFM
|
Lee, Jong Wan
|
|
1997
|
121 |
1-4 |
p. 474-479
6 p.
|
artikel
|
| 42 |
Ion beam assisted chemical etching of single crystal diamond chips
|
Kiyohara, Shuji
|
|
1997
|
121 |
1-4 |
p. 510-513
4 p.
|
artikel
|
| 43 |
Ion beam induced epitaxial crystallization of SrTiO3
|
Oyoshi, K.
|
|
1997
|
121 |
1-4 |
p. 184-186
3 p.
|
artikel
|
| 44 |
Ion beam modification of transparent conducting indium-tin-oxide thin films
|
Haynes, T.E.
|
|
1997
|
121 |
1-4 |
p. 221-225
5 p.
|
artikel
|
| 45 |
Ion beam smoothing of CVD diamond thin films by etchback method
|
Kiyohara, Shuji
|
|
1997
|
121 |
1-4 |
p. 191-194
4 p.
|
artikel
|
| 46 |
Irradiation effects of O2 cluster ions for lead oxide film formation
|
Akizuki, M.
|
|
1997
|
121 |
1-4 |
p. 166-169
4 p.
|
artikel
|
| 47 |
Irradiation effects on the magnetic properties of La1.85Sr0.15CuO4 by high-energy heavy ions
|
Fan, X.
|
|
1997
|
121 |
1-4 |
p. 331-334
4 p.
|
artikel
|
| 48 |
Laser annealing of an amorphous NdFeB alloy
|
Harada, Tetsuji
|
|
1997
|
121 |
1-4 |
p. 383-386
4 p.
|
artikel
|
| 49 |
Laser induced formation of micro-rough structures
|
Singh, Rajiv K.
|
|
1997
|
121 |
1-4 |
p. 363-366
4 p.
|
artikel
|
| 50 |
Laser purification of metals (I); high Rydberg states of Ni, Ag, and Pd
|
Ishikawa, T.
|
|
1997
|
121 |
1-4 |
p. 437-441
5 p.
|
artikel
|
| 51 |
Laser purification of metals (II); Purification of Ni and Ag
|
Mori, H.
|
|
1997
|
121 |
1-4 |
p. 442-445
4 p.
|
artikel
|
| 52 |
Metal contacts on shallow junctions
|
Chen, L.J.
|
|
1997
|
121 |
1-4 |
p. 231-236
6 p.
|
artikel
|
| 53 |
Molecular dynamics simulation for ionized cluster beam deposition
|
Kang, Hee Jae
|
|
1997
|
121 |
1-4 |
p. 53-57
5 p.
|
artikel
|
| 54 |
Molecular dynamics simulation of damage formation by cluster ion impact
|
Aoki, T.
|
|
1997
|
121 |
1-4 |
p. 49-52
4 p.
|
artikel
|
| 55 |
Molecular dynamics simulations of low energy atomic collisions between an atom and a substrate: Effect of incident angle and energy
|
Ohashi, Tetsuya
|
|
1997
|
121 |
1-4 |
p. 40-43
4 p.
|
artikel
|
| 56 |
New large area ultraviolet lamp sources and their applications
|
Boyd, Ian W.
|
|
1997
|
121 |
1-4 |
p. 349-356
8 p.
|
artikel
|
| 57 |
Nitrogen distribution and microstructure of hot implanted FeTi alloy films
|
Ohtani, S.
|
|
1997
|
121 |
1-4 |
p. 319-322
4 p.
|
artikel
|
| 58 |
Observation of long range disorder caused by low energy (20–200 eV) O+ and Ar+ beams, in NdBaCuO films
|
Pindoria, G.
|
|
1997
|
121 |
1-4 |
p. 141-145
5 p.
|
artikel
|
| 59 |
On the possibility of channeled ion assisted epitaxial growth
|
Saitoh, Kazuo
|
|
1997
|
121 |
1-4 |
p. 84-89
6 p.
|
artikel
|
| 60 |
Optical and structural characterization of implanted nanocrystalline semiconductors
|
Shimizu-Iwayama, Tsutomu
|
|
1997
|
121 |
1-4 |
p. 450-454
5 p.
|
artikel
|
| 61 |
Organizers and committees
|
|
|
1997
|
121 |
1-4 |
p. viii-
1 p.
|
artikel
|
| 62 |
Oxidation of silicon by low energy oxygen ions
|
Williams, J.S.
|
|
1997
|
121 |
1-4 |
p. 24-29
6 p.
|
artikel
|
| 63 |
Oxygen-impurity interactions in crystalline silicon: The cases of aluminum and erbium
|
Rimini, E.
|
|
1997
|
121 |
1-4 |
p. 18-23
6 p.
|
artikel
|
| 64 |
Patterning silicon carbide on silicon by ion modification of C60 films
|
Moro, L.
|
|
1997
|
121 |
1-4 |
p. 151-153
3 p.
|
artikel
|
| 65 |
Photoluminescence characterization of dually Cd+ and N+ ion-implanted GaAs
|
Kotani, M.
|
|
1997
|
121 |
1-4 |
p. 302-305
4 p.
|
artikel
|
| 66 |
Photoluminescence studies of epitaxial Si1−x Ge x and Si1−x−yGexCy layers on Si formed by ion beam synthesis
|
Katsumata, H.
|
|
1997
|
121 |
1-4 |
p. 146-150
5 p.
|
artikel
|
| 67 |
Photoresponse of zinc phosphide thin films grown by ionized cluster beam deposition
|
Kakishita, K.
|
|
1997
|
121 |
1-4 |
p. 175-178
4 p.
|
artikel
|
| 68 |
Plasma doping optimization for ultra-shallow junctions
|
Jones, Erin C.
|
|
1997
|
121 |
1-4 |
p. 216-220
5 p.
|
artikel
|
| 69 |
Plasma immersion ion implantation for materials modification and semiconductor processing: Carbon nitride films and poly-Si TFTs hydrogenation
|
Husein, Imad F.
|
|
1997
|
121 |
1-4 |
p. 226-230
5 p.
|
artikel
|
| 70 |
Preface
|
Yamada, Isao
|
|
1997
|
121 |
1-4 |
p. vii-
1 p.
|
artikel
|
| 71 |
Preparation and catalytic activity of nano-scale Au islands supported on TiO2
|
Takaoka, Gikan H.
|
|
1997
|
121 |
1-4 |
p. 503-506
4 p.
|
artikel
|
| 72 |
Preparation of amorphous carbon thin films by ion beam assisted ECR-plasma CVD
|
Baba, K.
|
|
1997
|
121 |
1-4 |
p. 129-132
4 p.
|
artikel
|
| 73 |
Preparation of boron nitride films by multi-source plasma CVD method
|
Nonogaki, R.
|
|
1997
|
121 |
1-4 |
p. 121-124
4 p.
|
artikel
|
| 74 |
Preparation of glass for radiotherapy of cancer by P+ ion implantation at 100 keV
|
Kawashita, Masakazu
|
|
1997
|
121 |
1-4 |
p. 323-327
5 p.
|
artikel
|
| 75 |
Properties of a new organo silver compound for MOCVD
|
Itsuki, Atsushi
|
|
1997
|
121 |
1-4 |
p. 116-120
5 p.
|
artikel
|
| 76 |
Pt thin films prepared by low energy plasma sputtering
|
Suzuki, Y.
|
|
1997
|
121 |
1-4 |
p. 107-109
3 p.
|
artikel
|
| 77 |
Pulsed laser deposition of CdWO4
|
Tanaka, Katsumi
|
|
1997
|
121 |
1-4 |
p. 404-407
4 p.
|
artikel
|
| 78 |
Pulsed laser deposition of electronic ceramics
|
Horwitz, J.S.
|
|
1997
|
121 |
1-4 |
p. 371-377
7 p.
|
artikel
|
| 79 |
Pulsed laser deposition of silicon films for solar cell applications
|
Hanabusa, Mitsugu
|
|
1997
|
121 |
1-4 |
p. 367-370
4 p.
|
artikel
|
| 80 |
Pulsed laser deposition of tungsten carbide thin films on silicon (100) substrate
|
Suda, Y.
|
|
1997
|
121 |
1-4 |
p. 396-399
4 p.
|
artikel
|
| 81 |
Reactive magnetron sputtering of silicon to produce silicon oxide
|
Howson, R.P.
|
|
1997
|
121 |
1-4 |
p. 90-95
6 p.
|
artikel
|
| 82 |
Reactive sputtering by SF6 cluster ion beams
|
Toyoda, N.
|
|
1997
|
121 |
1-4 |
p. 484-488
5 p.
|
artikel
|
| 83 |
Recent advances of focused ion beam technology
|
Gamo, Kenji
|
|
1997
|
121 |
1-4 |
p. 464-469
6 p.
|
artikel
|
| 84 |
Reliability of shallow n+-type layers formed in dual As and B implanted silicon by rapid thermal annealing
|
Yokota, Katsuhiro
|
|
1997
|
121 |
1-4 |
p. 295-298
4 p.
|
artikel
|
| 85 |
Research and development of industrial science and technology promoted by NEDO
|
Mukai, Tamotsu
|
|
1997
|
121 |
1-4 |
p. 10-17
8 p.
|
artikel
|
| 86 |
Residual stress improvement in metal surface by underwater laser irradiation
|
Sano, Yuji
|
|
1997
|
121 |
1-4 |
p. 432-436
5 p.
|
artikel
|
| 87 |
Review of Ion Engineering Center and related projects in Ion Engineering Research Institute
|
Inoue, Morio
|
|
1997
|
121 |
1-4 |
p. 1-6
6 p.
|
artikel
|
| 88 |
Room temperature GaAsSi and InPSi wafer direct bonding by the surface activated bonding method
|
Chung, Taek Ryong
|
|
1997
|
121 |
1-4 |
p. 203-206
4 p.
|
artikel
|
| 89 |
Selection of kinetic energy of laser-ablated particles and its application for deposition of Au, Pt and Ag thin films
|
Sugihara, Tadashi
|
|
1997
|
121 |
1-4 |
p. 392-395
4 p.
|
artikel
|
| 90 |
Shallow junction formation by polyatomic cluster ion implantation
|
Takeuchi, D.
|
|
1997
|
121 |
1-4 |
p. 345-348
4 p.
|
artikel
|
| 91 |
Shallow junction formation in Si-devices: Damage accumulation and the role of photo-acoustic probes and multi-species implantation
|
Current, Michael I.
|
|
1997
|
121 |
1-4 |
p. 262-266
5 p.
|
artikel
|
| 92 |
Si(001) epitaxy from hyperthermal beams: Crystal growth, doping, and electronic properties
|
Greene, J.E.
|
|
1997
|
121 |
1-4 |
p. 58-64
7 p.
|
artikel
|
| 93 |
SiO bond formation by oxygen implantation into silicon
|
Kajiyama, Kenji
|
|
1997
|
121 |
1-4 |
p. 315-318
4 p.
|
artikel
|
| 94 |
Sponsors and session chairmen
|
|
|
1997
|
121 |
1-4 |
p. ix-
1 p.
|
artikel
|
| 95 |
Sputtering of elemental metals by Ar cluster ions
|
Matsuo, Jiro
|
|
1997
|
121 |
1-4 |
p. 459-463
5 p.
|
artikel
|
| 96 |
Sputtering of indium-tin oxide
|
Howson, R.P.
|
|
1997
|
121 |
1-4 |
p. 96-101
6 p.
|
artikel
|
| 97 |
STM observation of HOPG surfaces irradiated with Ar cluster ions
|
Seki, T.
|
|
1997
|
121 |
1-4 |
p. 498-502
5 p.
|
artikel
|
| 98 |
Study of Ar cluster ion bombardment of a sapphire surface
|
Takeuchi, D.
|
|
1997
|
121 |
1-4 |
p. 493-497
5 p.
|
artikel
|
| 99 |
Study on the effect of the interlayer on the adhesion of 400 μm thick film
|
Murakami, Y.
|
|
1997
|
121 |
1-4 |
p. 212-215
4 p.
|
artikel
|
| 100 |
Surface morphology and resistivity of aluminum oxide films prepared by plasma CVD combined with ion beam irradiation
|
Nakai, H.
|
|
1997
|
121 |
1-4 |
p. 125-128
4 p.
|
artikel
|
| 101 |
Synthesis and characterization of SiCSi3N4 composites by dual irradiation of CO2 and excimer lasers
|
Yamada, Tetsuo
|
|
1997
|
121 |
1-4 |
p. 378-382
5 p.
|
artikel
|
| 102 |
Synthesis of sputtered thin films in low energy ion beams
|
Howson, R.P.
|
|
1997
|
121 |
1-4 |
p. 65-72
8 p.
|
artikel
|
| 103 |
TEM investigation of the stainless steel/aluminum interface created by the surface activated bonding method
|
Yang, Liu
|
|
1997
|
121 |
1-4 |
p. 519-523
5 p.
|
artikel
|
| 104 |
Temperature-dependent study of ion-channeling in Fe Cr superlattices
|
Rüders, F.
|
|
1997
|
121 |
1-4 |
p. 30-35
6 p.
|
artikel
|
| 105 |
The behavior of fcc Cu nanocrystallites in Si(100)
|
Kim, Sang-Hyeob
|
|
1997
|
121 |
1-4 |
p. 514-518
5 p.
|
artikel
|
| 106 |
The charge effects in the low-energy ion depositing processes
|
Kiuchi, Masato
|
|
1997
|
121 |
1-4 |
p. 154-156
3 p.
|
artikel
|
| 107 |
The 3-D profiling of B ions implanted into Si
|
Nakagawa, S.T.
|
|
1997
|
121 |
1-4 |
p. 36-39
4 p.
|
artikel
|
| 108 |
The effect of B and P ion implantation on superconducting magnetic shielding in NbTi sheets
|
Ogawa, Souichi
|
|
1997
|
121 |
1-4 |
p. 328-330
3 p.
|
artikel
|
| 109 |
The synthesis of diamond particles by a filament assisted CO2 laser induced CVD
|
Gaze, Joseph
|
|
1997
|
121 |
1-4 |
p. 427-431
5 p.
|
artikel
|
| 110 |
Time-of-flight mass spectrometric studies on the plume dynamics of laser ablation of graphite
|
Kokai, F.
|
|
1997
|
121 |
1-4 |
p. 387-391
5 p.
|
artikel
|
| 111 |
Trapping of hydrogen in silicon-implanted aluminum
|
Ogura, Masahiko
|
|
1997
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121 |
1-4 |
p. 470-473
4 p.
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artikel
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| 112 |
Tribological hard layer synthesis by duplex ion beam treatment
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Han, Jeon G.
|
|
1997
|
121 |
1-4 |
p. 79-83
5 p.
|
artikel
|
| 113 |
Tribological properties of titanium nitride films prepared by dynamic ion beam mixing method
|
Nagasaka, Hiroshi
|
|
1997
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121 |
1-4 |
p. 279-282
4 p.
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artikel
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| 114 |
Ultramicrohardness measurement of ion implanted alumina
|
Ikeyama, M.
|
|
1997
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121 |
1-4 |
p. 335-339
5 p.
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artikel
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| 115 |
Utilizing of hydrocarbon contamination for prevention of the surface charge-up at electron-beam assisted chemical etching of a diamond chip
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Taniguchi, Jun
|
|
1997
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121 |
1-4 |
p. 507-509
3 p.
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artikel
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| 116 |
Vacuum characteristics of TiN film coated on the interior surface of a vacuum duct
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Minato, Michio
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1997
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121 |
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artikel
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| 117 |
Variable-energy positron beam system and its application to depth-selective defect analysis
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Hirata, K.
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1997
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121 |
1-4 |
p. 267-270
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