| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A compact filament-driven multicusp ion source
|
Lee, Y.
|
|
1996
|
119 |
4 |
p. 543-548
6 p.
|
article
|
| 2 |
Aggregation and precipitation in high dose As ion implanted Ge0.5Si0.5 alloy
|
Fan, T.W.
|
|
1996
|
119 |
4 |
p. 510-514
5 p.
|
article
|
| 3 |
A high-sensitivity Mössbauer spectrometer facilitates the study of iron proteins at natural abundance
|
Moon, Namdoo
|
|
1996
|
119 |
4 |
p. 555-564
10 p.
|
article
|
| 4 |
An analytic formula for the extrapolated range of electrons in condensed materials
|
Tabata, Tatsuo
|
|
1996
|
119 |
4 |
p. 463-470
8 p.
|
article
|
| 5 |
An ultra-high-stability Mössbauer spectrometer drive using a type-2 feedback system
|
Filter, William F
|
|
1996
|
119 |
4 |
p. 565-582
18 p.
|
article
|
| 6 |
Author index
|
|
|
1996
|
119 |
4 |
p. 599-607
9 p.
|
article
|
| 7 |
Calendar
|
|
|
1996
|
119 |
4 |
p. 597-598
2 p.
|
article
|
| 8 |
Comparison of TOF-ERDA and nuclear resonance reaction techniques for range profile measurements of keV energy implants
|
Jokinen, J.
|
|
1996
|
119 |
4 |
p. 533-542
10 p.
|
article
|
| 9 |
Defect accumulation during room temperature N+ irradiation of silicon
|
Titov, A.I.
|
|
1996
|
119 |
4 |
p. 491-500
10 p.
|
article
|
| 10 |
Determination of the hydrogen sensitivity and depth resolution of medium-energy, time-of-flight, forward-recoil spectrometry
|
Arps, James H.
|
|
1996
|
119 |
4 |
p. 527-532
6 p.
|
article
|
| 11 |
Doping of 20 MeV fullerene ion tracks in polyimide
|
Fink, D
|
|
1996
|
119 |
4 |
p. 591-595
5 p.
|
article
|
| 12 |
Experimental study of Ar+ beams extracted from a cold or hot reflex discharge ion source (CHORDIS)
|
Ratschko, D.
|
|
1996
|
119 |
4 |
p. 549-554
6 p.
|
article
|
| 13 |
Gliding reflection of positrons from slanting cut crystal
|
Bobrova, T.A.
|
|
1996
|
119 |
4 |
p. 523-526
4 p.
|
article
|
| 14 |
Ion-induced alkali-silicon interfaces: Atomistic simulations of collisional effects
|
Eckstein, W.
|
|
1996
|
119 |
4 |
p. 477-486
10 p.
|
article
|
| 15 |
On the enhancement of effective barrier height in Ti n-GaAs Schottky barrier diodes
|
Arulkumaran, S.
|
|
1996
|
119 |
4 |
p. 519-522
4 p.
|
article
|
| 16 |
Oscillations observed in electrons and scattered protons from 30–100 keV protons transiting a Si/Lexan/C layered foil
|
Hsu, C.C.
|
|
1996
|
119 |
4 |
p. 471-476
6 p.
|
article
|
| 17 |
Positron re-emission from epitaxially grown β-SiC
|
Jørgensen, L.V.
|
|
1996
|
119 |
4 |
p. 487-490
4 p.
|
article
|
| 18 |
Preferred orientation in carbon films induced by energetic condensation
|
Yin, Y.
|
|
1996
|
119 |
4 |
p. 587-590
4 p.
|
article
|
| 19 |
Stopping powers of GaAs for 0.3–2.5 MeV 1H and 4He ions
|
Rajatora, M.
|
|
1996
|
119 |
4 |
p. 457-462
6 p.
|
article
|
| 20 |
Stopping powers of 200–3000 keV 4He and 550–1750 keV 1H ions in Vyns
|
Munnik, F.
|
|
1996
|
119 |
4 |
p. 445-451
7 p.
|
article
|
| 21 |
Study of track registration response of makrofol-KL to 40Ar and 136Xe ions
|
Kumar, Ashavani
|
|
1996
|
119 |
4 |
p. 515-518
4 p.
|
article
|
| 22 |
Subject index
|
|
|
1996
|
119 |
4 |
p. 609-612
4 p.
|
article
|
| 23 |
The formation and microstructures of Si-based blue-light emitting porous β-SiC
|
Bao, Xi-Mao
|
|
1996
|
119 |
4 |
p. 505-509
5 p.
|
article
|
| 24 |
The investigation of the multiple ionization of argon by energetic oxygen ions
|
Cai, X.
|
|
1996
|
119 |
4 |
p. 452-456
5 p.
|
article
|
| 25 |
Time-correlated luminescence from MeV projectile impacts
|
Blankenship, J.F
|
|
1996
|
119 |
4 |
p. 583-586
4 p.
|
article
|
| 26 |
Titanium aluminide formation in Ti implanted aluminium alloy
|
Knight, S.T.
|
|
1996
|
119 |
4 |
p. 501-504
4 p.
|
article
|
Journal description