nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A compact flat-crystal X-ray spectrometer for external beam PIXE measurements
|
Tesauro, P. |
|
1996 |
108 |
1-2 |
p. 197-204 8 p. |
artikel |
2 |
A molecular dynamics study of collisional excitation/deexcitation at ion-bombarded surfaces
|
Shiang, Keh-Dong |
|
1996 |
108 |
1-2 |
p. 51-61 11 p. |
artikel |
3 |
A new computer code for quantitative analysis of low-energy ion scattering data
|
Dorenbos, G. |
|
1996 |
108 |
1-2 |
p. 173-178 6 p. |
artikel |
4 |
A new method of characterizing patterns in X-ray tomographic images of a composite specimen
|
Munshi, P. |
|
1996 |
108 |
1-2 |
p. 205-212 8 p. |
artikel |
5 |
A new technique to measure the etch rate of mica
|
Freeman, E. |
|
1996 |
108 |
1-2 |
p. 129-132 4 p. |
artikel |
6 |
A SIMS study on secondary ion formation during low-energy methyl ion beam deposition
|
Ohno, Hideki |
|
1996 |
108 |
1-2 |
p. 75-80 6 p. |
artikel |
7 |
Calendar
|
|
|
1996 |
108 |
1-2 |
p. 219-221 3 p. |
artikel |
8 |
(α, α) Cross section on 11B for α-energies between 1.0 and 5.3 MeV
|
Liu, J.R. |
|
1996 |
108 |
1-2 |
p. 1-6 6 p. |
artikel |
9 |
Determination of the optimum experimental conditions for enhanced depth resolution in RBS using He ions
|
Kim, M.S. |
|
1996 |
108 |
1-2 |
p. 139-146 8 p. |
artikel |
10 |
Editorial
|
Henrik Andersen, Hans |
|
1996 |
108 |
1-2 |
p. v-vi nvt p. |
artikel |
11 |
Editorial Board
|
|
|
1996 |
108 |
1-2 |
p. ii-iii nvt p. |
artikel |
12 |
Effect of radial energy distribution on ion track etching in amorphous metallic Fe81B13.5Si3.5C2
|
Trautmann, C. |
|
1996 |
108 |
1-2 |
p. 94-98 5 p. |
artikel |
13 |
Electron transport: multiple and plural elastic scattering
|
Kawrakow, I. |
|
1996 |
108 |
1-2 |
p. 23-34 12 p. |
artikel |
14 |
Extraction of lateral non-uniformity statistics from Rutherford backscattering spectra
|
Marin, N. |
|
1996 |
108 |
1-2 |
p. 179-187 9 p. |
artikel |
15 |
Gamma dose and dose rate effects on scintillator light output
|
Biagtan, E. |
|
1996 |
108 |
1-2 |
p. 125-128 4 p. |
artikel |
16 |
Hydrogen effects on the electrical and optical properties of γ-irradiated n-type GaAs epilayers
|
Ulyashin, A.G |
|
1996 |
108 |
1-2 |
p. 65-69 5 p. |
artikel |
17 |
Increase of nanometer-scale wear of polished chemical-vapor-deposited diamond films due to nitrogen ion implantation
|
Miyake, Shojiro |
|
1996 |
108 |
1-2 |
p. 70-74 5 p. |
artikel |
18 |
Intercomparison of experimental and theoretical ranges of heavy ions in plastic track detectors
|
Randhawa, G.S. |
|
1996 |
108 |
1-2 |
p. 7-10 4 p. |
artikel |
19 |
Interference phenomenon under focusing of synchrotron radiation by a Kumakhov lens
|
Dabagov, S.B. |
|
1996 |
108 |
1-2 |
p. 213-218 6 p. |
artikel |
20 |
Investigation of ultra thin SiN x O y layers produced by low-energy ion implantation with NRA and channeling-RBS
|
Michelmann, R.W. |
|
1996 |
108 |
1-2 |
p. 62-64 3 p. |
artikel |
21 |
Ion beam radiation damage of thin fullerene films
|
Fink, D. |
|
1996 |
108 |
1-2 |
p. 114-124 11 p. |
artikel |
22 |
Low-Z impurities of carbon foils
|
Veeck, A. |
|
1996 |
108 |
1-2 |
p. 159-162 4 p. |
artikel |
23 |
Measurement of M shell X-ray production cross sections and fluorescence yields for the elements in the atomic range 70 ≤ Z ≤ 92 at 5.96 keV
|
Ertuǧrul, M. |
|
1996 |
108 |
1-2 |
p. 18-22 5 p. |
artikel |
24 |
Mechanical characterization by nanoindentation of zirconium ion implanted alumina
|
Boudoukha, L. |
|
1996 |
108 |
1-2 |
p. 87-93 7 p. |
artikel |
25 |
Monte Carlo simulation of 0.1–100 keV electron and positron transport in solids using optical data and partial wave methods
|
Fernández-Varea, J.M. |
|
1996 |
108 |
1-2 |
p. 35-50 16 p. |
artikel |
26 |
On-line coupling of PIXE with capillary zone electrophoresis (CZE)
|
Vogt, J. |
|
1996 |
108 |
1-2 |
p. 133-135 3 p. |
artikel |
27 |
Proton channeling effect in the smectic liquid crystal
|
Liu, Zhengmin |
|
1996 |
108 |
1-2 |
p. 136-138 3 p. |
artikel |
28 |
Range distributions and projected ranges of 0.1- to 100-MeV electrons in elemental absorbers
|
Tabata, Tatsuo |
|
1996 |
108 |
1-2 |
p. 11-17 7 p. |
artikel |
29 |
Reduction of secondary defects in 50 keV P+-implanted Si(100) by MeV Si ion irradiation
|
Zhao, Qing-Tai |
|
1996 |
108 |
1-2 |
p. 81-84 4 p. |
artikel |
30 |
Resonance neutron methods for determining statistical properties of phonon spectra
|
Lynn, J.E. |
|
1996 |
108 |
1-2 |
p. 147-158 12 p. |
artikel |
31 |
RETRACTED: Uptake and excretion of cobalt in the crustacean Portunus trituberculatus
|
Matsuda, Y. |
|
1996 |
108 |
1-2 |
p. 188-196 9 p. |
artikel |
32 |
Silicon nitride films produced by ion-beam assisted deposition: bulk and near-surface composition
|
Grigorov, G.I |
|
1996 |
108 |
1-2 |
p. 85-86 2 p. |
artikel |
33 |
“Spontaneous” desorption: A controlled phenomenon for surface analysis application? Part I: New evidence for a sputtering process induced by a well localized field enhanced desorption
|
Allali, H. |
|
1996 |
108 |
1-2 |
p. 163-172 10 p. |
artikel |
34 |
The p/mc dependence of the grain density of tracks in the FUJI ET-7B nuclear emulsion
|
Plante, C. |
|
1996 |
108 |
1-2 |
p. 99-113 15 p. |
artikel |