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                             34 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A compact flat-crystal X-ray spectrometer for external beam PIXE measurements Tesauro, P.
1996
108 1-2 p. 197-204
8 p.
artikel
2 A molecular dynamics study of collisional excitation/deexcitation at ion-bombarded surfaces Shiang, Keh-Dong
1996
108 1-2 p. 51-61
11 p.
artikel
3 A new computer code for quantitative analysis of low-energy ion scattering data Dorenbos, G.
1996
108 1-2 p. 173-178
6 p.
artikel
4 A new method of characterizing patterns in X-ray tomographic images of a composite specimen Munshi, P.
1996
108 1-2 p. 205-212
8 p.
artikel
5 A new technique to measure the etch rate of mica Freeman, E.
1996
108 1-2 p. 129-132
4 p.
artikel
6 A SIMS study on secondary ion formation during low-energy methyl ion beam deposition Ohno, Hideki
1996
108 1-2 p. 75-80
6 p.
artikel
7 Calendar 1996
108 1-2 p. 219-221
3 p.
artikel
8 (α, α) Cross section on 11B for α-energies between 1.0 and 5.3 MeV Liu, J.R.
1996
108 1-2 p. 1-6
6 p.
artikel
9 Determination of the optimum experimental conditions for enhanced depth resolution in RBS using He ions Kim, M.S.
1996
108 1-2 p. 139-146
8 p.
artikel
10 Editorial Henrik Andersen, Hans
1996
108 1-2 p. v-vi
nvt p.
artikel
11 Editorial Board 1996
108 1-2 p. ii-iii
nvt p.
artikel
12 Effect of radial energy distribution on ion track etching in amorphous metallic Fe81B13.5Si3.5C2 Trautmann, C.
1996
108 1-2 p. 94-98
5 p.
artikel
13 Electron transport: multiple and plural elastic scattering Kawrakow, I.
1996
108 1-2 p. 23-34
12 p.
artikel
14 Extraction of lateral non-uniformity statistics from Rutherford backscattering spectra Marin, N.
1996
108 1-2 p. 179-187
9 p.
artikel
15 Gamma dose and dose rate effects on scintillator light output Biagtan, E.
1996
108 1-2 p. 125-128
4 p.
artikel
16 Hydrogen effects on the electrical and optical properties of γ-irradiated n-type GaAs epilayers Ulyashin, A.G
1996
108 1-2 p. 65-69
5 p.
artikel
17 Increase of nanometer-scale wear of polished chemical-vapor-deposited diamond films due to nitrogen ion implantation Miyake, Shojiro
1996
108 1-2 p. 70-74
5 p.
artikel
18 Intercomparison of experimental and theoretical ranges of heavy ions in plastic track detectors Randhawa, G.S.
1996
108 1-2 p. 7-10
4 p.
artikel
19 Interference phenomenon under focusing of synchrotron radiation by a Kumakhov lens Dabagov, S.B.
1996
108 1-2 p. 213-218
6 p.
artikel
20 Investigation of ultra thin SiN x O y layers produced by low-energy ion implantation with NRA and channeling-RBS Michelmann, R.W.
1996
108 1-2 p. 62-64
3 p.
artikel
21 Ion beam radiation damage of thin fullerene films Fink, D.
1996
108 1-2 p. 114-124
11 p.
artikel
22 Low-Z impurities of carbon foils Veeck, A.
1996
108 1-2 p. 159-162
4 p.
artikel
23 Measurement of M shell X-ray production cross sections and fluorescence yields for the elements in the atomic range 70 ≤ Z ≤ 92 at 5.96 keV Ertuǧrul, M.
1996
108 1-2 p. 18-22
5 p.
artikel
24 Mechanical characterization by nanoindentation of zirconium ion implanted alumina Boudoukha, L.
1996
108 1-2 p. 87-93
7 p.
artikel
25 Monte Carlo simulation of 0.1–100 keV electron and positron transport in solids using optical data and partial wave methods Fernández-Varea, J.M.
1996
108 1-2 p. 35-50
16 p.
artikel
26 On-line coupling of PIXE with capillary zone electrophoresis (CZE) Vogt, J.
1996
108 1-2 p. 133-135
3 p.
artikel
27 Proton channeling effect in the smectic liquid crystal Liu, Zhengmin
1996
108 1-2 p. 136-138
3 p.
artikel
28 Range distributions and projected ranges of 0.1- to 100-MeV electrons in elemental absorbers Tabata, Tatsuo
1996
108 1-2 p. 11-17
7 p.
artikel
29 Reduction of secondary defects in 50 keV P+-implanted Si(100) by MeV Si ion irradiation Zhao, Qing-Tai
1996
108 1-2 p. 81-84
4 p.
artikel
30 Resonance neutron methods for determining statistical properties of phonon spectra Lynn, J.E.
1996
108 1-2 p. 147-158
12 p.
artikel
31 RETRACTED: Uptake and excretion of cobalt in the crustacean Portunus trituberculatus Matsuda, Y.
1996
108 1-2 p. 188-196
9 p.
artikel
32 Silicon nitride films produced by ion-beam assisted deposition: bulk and near-surface composition Grigorov, G.I
1996
108 1-2 p. 85-86
2 p.
artikel
33 “Spontaneous” desorption: A controlled phenomenon for surface analysis application? Part I: New evidence for a sputtering process induced by a well localized field enhanced desorption Allali, H.
1996
108 1-2 p. 163-172
10 p.
artikel
34 The p/mc dependence of the grain density of tracks in the FUJI ET-7B nuclear emulsion Plante, C.
1996
108 1-2 p. 99-113
15 p.
artikel
                             34 gevonden resultaten
 
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