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                             59 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab initio pseudopotential calculations of point defects and boron impurity in silicon Zhu, Jing
 1995
 102 1-4 p. 29-32
4 p.
 artikel
2 Acceleration of binary collision simulations in crystalline targets using critical angles for ion channeling Hobler, G.
 1995
 102 1-4 p. 24-28
5 p.
 artikel
3 A molecular dynamics study of energetic particle impacts on carbon and silicon Smith, Roger
 1995
 102 1-4 p. 211-217
7 p.
 artikel
4 A multisite interaction expansion of the total energy in metals Sowa, Erik C.
 1995
 102 1-4 p. 1-2
2 p.
 artikel
5 A new model of vacancy loop nucleation in irradiated metals Kapinos, V.G.
 1995
 102 1-4 p. 156-159
4 p.
 artikel
6 An improved molecular dynamics scheme for ion bombardment simulations Marqués, L.A.
 1995
 102 1-4 p. 7-11
5 p.
 artikel
7 An instantaneous inelastic energy loss algorithm for use in molecular dynamics simulations Shapiro, M.H.
 1995
 102 1-4 p. 277-280
4 p.
 artikel
8 An investigation of collision propagation in energetic ion initiated cascades in copper Chakarov, I.R.
 1995
 102 1-4 p. 145-150
6 p.
 artikel
9 Atomix excitation during the impact of ions and clusters Tombrello, T.A.
 1995
 102 1-4 p. 312-316
5 p.
 artikel
10 Author index 1995
 102 1-4 p. 327-331
5 p.
 artikel
11 Cascade statistics in the binary collision approximation and in full molecular dynamics Hou, M.
 1995
 102 1-4 p. 93-102
10 p.
 artikel
12 CASSIS — A new Monte-Carlo computer program for channeling simulation of RBS, NRA and PIXE Kling, A.
 1995
 102 1-4 p. 141-144
4 p.
 artikel
13 Challenges for predictive process simulation in sub 0.1 μm silicon devices Plummer, J.D.
 1995
 102 1-4 p. 160-166
7 p.
 artikel
14 Cluster-solid interaction experiments Brown, Walter L.
 1995
 102 1-4 p. 305-311
7 p.
 artikel
15 Collision cascades in Zr2Fe, Zr3Fe and ZrFe2 Howe, L.M.
 1995
 102 1-4 p. 77-80
4 p.
 artikel
16 Collision dynamics between gold clusters and gold thin films Pan, Z.Y.
 1995
 102 1-4 p. 317-321
5 p.
 artikel
17 Comparison of BC and MD simulations of low-energy ion implantation Posselt, M.
 1995
 102 1-4 p. 236-241
6 p.
 artikel
18 Comparison of channeling trajectories and ranges calculated by the continuum potential approximation and Crystal-TRIM Liu, Q.K.K.
 1995
 102 1-4 p. 3-6
4 p.
 artikel
19 Computer simulation of atomic displacements in Si, GaAs, and AlAs Sayed, M.
 1995
 102 1-4 p. 232-235
4 p.
 artikel
20 Computer simulation of defect production by displacement cascades in metals Bacon, D.J.
 1995
 102 1-4 p. 37-46
10 p.
 artikel
21 Computer simulation of mechanisms of the SIMOX process Reiss, Stefan
 1995
 102 1-4 p. 256-260
5 p.
 artikel
22 Computer simulations of disordering and amorphization kinetics in intermetallic compounds Spaczér, M.
 1995
 102 1-4 p. 81-85
5 p.
 artikel
23 Defects from implantation in silicon by linked Marlow-molecular dynamics calculations Jaraiz,, M.
 1995
 102 1-4 p. 180-182
3 p.
 artikel
24 Diffusion and interactions of point defects in silicon: molecular dynamics simulations Gilmer, G.H.
 1995
 102 1-4 p. 247-255
9 p.
 artikel
25 Dynamic Monte Carlo simulation for ion beam mixing Kang, H.J.
 1995
 102 1-4 p. 136-140
5 p.
 artikel
26 Dynamic simulation of damage accumulation during implantation of BF2 + molecular ions into crystalline silicon Posselt, M.
 1995
 102 1-4 p. 167-172
6 p.
 artikel
27 Editorial board 1995
 102 1-4 p. FM6-
1 p.
 artikel
28 Escape probabilities for electrons emitted during the interaction of slow highly charged ions with metal surfaces Lemell, C.
 1995
 102 1-4 p. 33-36
4 p.
 artikel
29 Impact of glissile interstitial loop production in cascades on void ordering and swelling saturation under irradiation Dubinko, V.I.
 1995
 102 1-4 p. 125-131
7 p.
 artikel
30 Improved efficiency in Monte Carlo simulation of ion implanted impurity profiles in single-crystal materials Yang, S.-H.
 1995
 102 1-4 p. 242-246
5 p.
 artikel
31 Increasing the retained dose by plasma immersion ion implantation and deposition Anders, André
 1995
 102 1-4 p. 132-135
4 p.
 artikel
32 Ion bombardment of polyethylene Beardmore, Keith
 1995
 102 1-4 p. 223-227
5 p.
 artikel
33 Low energy ion implantation simulation using a modified binary collision approximation code Arias, J.
 1995
 102 1-4 p. 228-231
4 p.
 artikel
34 Low energy ion irradiation of H-terminated Si(001): hydrogen sputtering, beam-induced (2 × 1) reconstruction, and Si epitaxy Ramana Murty, M.V.
 1995
 102 1-4 p. 293-300
8 p.
 artikel
35 Modeling of ion implantation in single-crystal silicon Tasch, A.F.
 1995
 102 1-4 p. 173-179
7 p.
 artikel
36 Modelling of amorphous zones in semiconductors by using the randomization-and-relaxation method Jenčič, I.
 1995
 102 1-4 p. 202-206
5 p.
 artikel
37 Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions Rubio, J.E.
 1995
 102 1-4 p. 301-304
4 p.
 artikel
38 Molecular dynamics simulations of displacement cascades in metallic systems Doan, N.V.
 1995
 102 1-4 p. 58-66
9 p.
 artikel
39 Molecular dynamics simulations of implantation damage and recovery in semiconductors Sayed, M.
 1995
 102 1-4 p. 218-222
5 p.
 artikel
40 Molecular dynamics studies of cluster emission in sputtering Betz, G.
 1995
 102 1-4 p. 281-292
12 p.
 artikel
41 Momentum in atomic collision cascades Sckerl, M.W.
 1995
 102 1-4 p. 86-92
7 p.
 artikel
42 Numerical analysis of stress effects on Frank loop evolution during irradiation in austenitic Fe&z.sbnd;Cr&z.sbnd;Ni alloy Tanigawa, Hiroyasu
 1995
 102 1-4 p. 151-155
5 p.
 artikel
43 Phase evolution under irradiation: Monte Carlo and mean-field modelings Bellon, P.
 1995
 102 1-4 p. 72-76
5 p.
 artikel
44 Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation Stock, D.M.
 1995
 102 1-4 p. 207-210
4 p.
 artikel
45 Preface 1995
 102 1-4 p. vii-
1 p.
 artikel
46 Preferential sputtering of alloys: a molecular-dynamics study Gades, Heinrich
 1995
 102 1-4 p. 261-271
11 p.
 artikel
47 Process simulation challenges for ULSI devices: A users perspective Current, M.I
 1995
 102 1-4 p. 198-201
4 p.
 artikel
48 Radiation cleansing of vacancies Johnson, Robert A.
 1995
 102 1-4 p. 103-106
4 p.
 artikel
49 Relocation cross-sections in silicon: Theoretical models Caturla, M.J.
 1995
 102 1-4 p. 19-23
5 p.
 artikel
50 Round robin computer simulation of ion transmission through crystalline layers Gärtner, K.
 1995
 102 1-4 p. 183-197
15 p.
 artikel
51 Simulating the production of free defects in irradiated metals Heinisch, H.L.
 1995
 102 1-4 p. 47-50
4 p.
 artikel
52 Simulation of heavy-ion cluster impact fusion Yamamura, Yasunori
 1995
 102 1-4 p. 322-325
4 p.
 artikel
53 Simulation of plastic deformation of small iron and copper single crystals Doyama, Masao
 1995
 102 1-4 p. 107-112
6 p.
 artikel
54 Simulation of radiation induced structural transformation in glassy metals Mattila, T.
 1995
 102 1-4 p. 119-124
6 p.
 artikel
55 Surface effects on damage production during ion bombardment: A molecular dynamics study Ghaly, Mai
 1995
 102 1-4 p. 51-57
7 p.
 artikel
56 Temporal aspects of sputtering of TaC targets Vichev, R.G.
 1995
 102 1-4 p. 272-276
5 p.
 artikel
57 The correlation of defect distribution in collisional phase with measured cascade collapse probability Morishita, K.
 1995
 102 1-4 p. 67-71
5 p.
 artikel
58 The effect of neutron energy on defect production in alumina Lee, M.B.
 1995
 102 1-4 p. 113-118
6 p.
 artikel
59 The influence of impurity trapping on formation and growth of defect clusters in irradiated materials Katoh, Yutai
 1995
 102 1-4 p. 12-18
7 p.
 artikel
                             59 gevonden resultaten
 
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