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                             74 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advantages of using Spin-On-Glass layer in interconnection dielectric planarization Schiltz, A.
 1986
 5 1-4 p. 413-421
9 p.
 artikel
2 A dynamic real time 3-D measurement technique for IC inspection Breton, B.C.
 1986
 5 1-4 p. 541-545
5 p.
 artikel
3 A flexible beamshaper van der Mast, K.D.
 1986
 5 1-4 p. 115-122
8 p.
 artikel
4 A high frequency logic-state tracing method Brust, H.-D.
 1986
 5 1-4 p. 531-540
10 p.
 artikel
5 A MOSFET, manufactured with synchrotron X-ray lithography Hersener, J.
 1986
 5 1-4 p. 105-112
8 p.
 artikel
6 An image fidelity approach to measuring the point spread function in electron and ion beam lithographies Haslam, Michael E.
 1986
 5 1-4 p. 491-498
8 p.
 artikel
7 Application of titanium RIE to the fabrication of nm-scale structures Unger, P.
 1986
 5 1-4 p. 279-286
8 p.
 artikel
8 A practical submicron lithography system using a conventional source X-ray stepper Fay, B.
 1986
 5 1-4 p. 587-595
9 p.
 artikel
9 ArF laser induced lift-off process Moerl, Ludwig
 1986
 5 1-4 p. 453-458
6 p.
 artikel
10 Author index volume 5 (1986) 1986
 5 1-4 p. 599-605
7 p.
 artikel
11 Automatic mask alignment for X-ray microlithography Doemens, Günter
 1986
 5 1-4 p. 89-96
8 p.
 artikel
12 Characterization of UV hardening process Vázsonyi, E.B.
 1986
 5 1-4 p. 341-347
7 p.
 artikel
13 Commercial dyes for novolak based multilayer systems Paniez, P.
 1986
 5 1-4 p. 321-327
7 p.
 artikel
14 Confocal laser microscope for submicron structure measurement Zapf, Th.
 1986
 5 1-4 p. 573-580
8 p.
 artikel
15 Contents 1986
 5 1-4 p. ix-xiii
nvt p.
 artikel
16 Crirical dimension control in X-ray masks with electroplated gold absorbers Windbracke, W.
 1986
 5 1-4 p. 73-80
8 p.
 artikel
17 Determination of the average stress and its adjustment in thin silicon membranes used in various lithographies Anderer, B.A.
 1986
 5 1-4 p. 67-71
5 p.
 artikel
18 Determination of the proximity parameters in electron beam lithography using doughnut-structures Stevens, L.
 1986
 5 1-4 p. 141-150
10 p.
 artikel
19 Diazopolysiloxanes: Unique imageable barrier layers Babich, E.
 1986
 5 1-4 p. 299-313
15 p.
 artikel
20 Direct fabrication of nanometre-scale structures in semiconductors with 500 keV lithography Jones, G.A.C.
 1986
 5 1-4 p. 265-271
7 p.
 artikel
21 E-beam testing of high-speed electronic devices Schmitt, Reinhold
 1986
 5 1-4 p. 523-530
8 p.
 artikel
22 Editorial Board 1986
 5 1-4 p. ii-
1 p.
 artikel
23 Effects of silylation parameters on the lithographic performance of the desire system Coopmans, F.
 1986
 5 1-4 p. 291-297
7 p.
 artikel
24 Electron beam decomposition of carbonyls on silicon Scheuer, Volker
 1986
 5 1-4 p. 423-430
8 p.
 artikel
25 Electron beam / optical mixed lithography at half-micron ground rules Coane, P.
 1986
 5 1-4 p. 133-140
8 p.
 artikel
26 Electronic materials surface processing with excimer lasers Elliott, David J.
 1986
 5 1-4 p. 435-444
10 p.
 artikel
27 Electron optical column for high speed nanometric lithography Saitou, N.
 1986
 5 1-4 p. 123-131
9 p.
 artikel
28 Energy and time-resolved photoemission in a promising new approach for contactless integrated-circuit testing Seitz, H.K.
 1986
 5 1-4 p. 547-553
7 p.
 artikel
29 Excimer lasers as deep UV sources for photolithographic system Goodall, F
 1986
 5 1-4 p. 445-452
8 p.
 artikel
30 Extension of the M.A.L.T. concept to thick layers with emphasis on focusing conditions Guillaume, M.E.
 1986
 5 1-4 p. 563-570
8 p.
 artikel
31 Fabrication of grating gates for lateral surface superlattice devices using E-beam lithography Caro, J.
 1986
 5 1-4 p. 273-277
5 p.
 artikel
32 Fabrication of low-capacitance Josephson-junctions Schellingerhout, A.J.G.
 1986
 5 1-4 p. 287-288
2 p.
 artikel
33 Fabrication of thin-film warm carrier infrared laser detectors using nitrocellulose self-developing resist Yasuoka, Y.
 1986
 5 1-4 p. 335-340
6 p.
 artikel
34 Fully-automated optical inspection for VLSI production Ehm, H.
 1986
 5 1-4 p. 555-562
8 p.
 artikel
35 Highly-sensitive novolak-based positive X-ray resist Dössel, K.-F.
 1986
 5 1-4 p. 97-104
8 p.
 artikel
36 High-temperature-stable Si3N4 dummy T-gate and lift-off mask Buchmann, P.
 1986
 5 1-4 p. 395-401
7 p.
 artikel
37 Influence of thin film thickness variations on pattern fidelity of X-ray masks Brünger, W.H.
 1986
 5 1-4 p. 61-65
5 p.
 artikel
38 Investigation of structure profiles in negative resists Aristov, V.V.
 1986
 5 1-4 p. 329-334
6 p.
 artikel
39 Ion energy and anisotropy in microwave plasma etching of polymers Heidenreich, J.E.
 1986
 5 1-4 p. 363-374
12 p.
 artikel
40 Ion-implant compensation of tensile stress in Tungsten absorber for low distortion X-ray masks Plotnik, I.
 1986
 5 1-4 p. 51-59
9 p.
 artikel
41 Ion projection lithography in (in)organic resist layers Fischer, R.
 1986
 5 1-4 p. 193-200
8 p.
 artikel
42 Laser-induced chemical processing at interfaces Bäuerle, Dieter
 1986
 5 1-4 p. 433-
1 p.
 artikel
43 Mask and circuit repair applications of focused ion beam deposition Shaver, D.C.
 1986
 5 1-4 p. 191-
1 p.
 artikel
44 Maskless ion beam assisted deposition of W and Ta films Gamo, Kenji
 1986
 5 1-4 p. 163-170
8 p.
 artikel
45 Mask making for synchrotron radiation lithography Ehrfeld, W.
 1986
 5 1-4 p. 463-470
8 p.
 artikel
46 Mechanism of microwave plasma etching of polyimides in O2 and CF4 gas mixtures Chou, N.J.
 1986
 5 1-4 p. 375-386
12 p.
 artikel
47 Metallurgy and microfabrication applications of gold-silicon-beryllium liquid-metal field-ion sources Reich, D.F.
 1986
 5 1-4 p. 171-178
8 p.
 artikel
48 Micromachining of polyimide films with focused ion beams Steckl, A.J.
 1986
 5 1-4 p. 461-462
2 p.
 artikel
49 Mini-trench isolation: Trench etching oxidation and refiling planarization Pons, M.
 1986
 5 1-4 p. 403-404
2 p.
 artikel
50 Nonometer-scale lithography for Aharonov-Bohm magnetoconductance oscillation studies van der Drift, E.
 1986
 5 1-4 p. 257-263
7 p.
 artikel
51 Periodic Si-hole-masks in the μm and sub-μm range for electron-multibeamwriting Olschimke, J.
 1986
 5 1-4 p. 405-412
8 p.
 artikel
52 Poly-4-bromostyrene, a high performance negative electron resist Schué, F.
 1986
 5 1-4 p. 315-319
5 p.
 artikel
53 Preface Lehmann, H.W.
 1986
 5 1-4 p. vii-
1 p.
 artikel
54 Progress on the Delft ion beam pattern generator Slingerland, H.N.
 1986
 5 1-4 p. 155-161
7 p.
 artikel
55 Quantum transport in microstructures Prober, Daniel E.
 1986
 5 1-4 p. 203-216
14 p.
 artikel
56 Radiation damage in dry etching Pang, S.W.
 1986
 5 1-4 p. 351-361
11 p.
 artikel
57 Recent developments in X-ray lithography systems Fencil, C.R.
 1986
 5 1-4 p. 597-
1 p.
 artikel
58 Scanning thermal profiler Williams, C.C.
 1986
 5 1-4 p. 509-513
5 p.
 artikel
59 Scanning tunneling microscopy Salemink, H.
 1986
 5 1-4 p. 501-508
8 p.
 artikel
60 Secondary effects of single crystalline silicon deep- trench etching in a chlorine-containing plasma for 3- dimensional capacitor cells Rangelow, I.W.
 1986
 5 1-4 p. 387-394
8 p.
 artikel
61 Silicon Micro Mechanics (SIMM): Si-beams with rectangular cross-section for atomic force sensing by means of STM Wolter, O.
 1986
 5 1-4 p. 477-
1 p.
 artikel
62 Silicon X-ray masks: Pattern placement and overlay accuracy Betz, H.
 1986
 5 1-4 p. 41-49
9 p.
 artikel
63 Simple method for the defect control in X-ray mask fabrication Kluwe, A.
 1986
 5 1-4 p. 81-88
8 p.
 artikel
64 Simulation of focused ion beam milling Müller, K.P.
 1986
 5 1-4 p. 481-489
9 p.
 artikel
65 Simulation of graded-base bipolar transistor characteristics fabricated with a focused ion beam Steckl, A.J.
 1986
 5 1-4 p. 179-189
11 p.
 artikel
66 Some aspects concerning design for e-beam testability Herrmann, K.D.
 1986
 5 1-4 p. 515-522
8 p.
 artikel
67 Stability of SiC-masks for high resolution synchrotron X-ray lithography Lüthje, H.
 1986
 5 1-4 p. 39-
1 p.
 artikel
68 Submicron MOS devices Fichtner, W.
 1986
 5 1-4 p. 219-238
20 p.
 artikel
69 Synchrotron lithography for sub-half-micron T-Gates in GAAS-FET Mueller, K.H.
 1986
 5 1-4 p. 239-246
8 p.
 artikel
70 The potential of mechanical microlithography for submicron patterning Gobrecht, J.
 1986
 5 1-4 p. 471-475
5 p.
 artikel
71 The SEM as inspection and testing tool in the IC industry Tollkamp-Schierjott, C.
 1986
 5 1-4 p. 581-586
6 p.
 artikel
72 The study of the electron-electron interaction in electron gun yajun, Wu
 1986
 5 1-4 p. 151-
1 p.
 artikel
73 Ultrasmall device fabrication using dry etching of gaas Thoms, Stephen
 1986
 5 1-4 p. 249-256
8 p.
 artikel
74 X-ray lithography Heuberger, A.
 1986
 5 1-4 p. 3-38
36 p.
 artikel
                             74 gevonden resultaten
 
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