| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers
|
De Gryse, O.
|
|
1999
|
284-285 |
2-3 |
p. 277-282
6 p.
|
artikel
|
| 2 |
Alkaline cleaning of silicon wafers: additives for the prevention of metal contamination
|
Martin, A.R.
|
|
1999
|
284-285 |
2-3 |
p. 197-208
12 p.
|
artikel
|
| 3 |
An industrial SR-TXRF facility at ESRF
|
Comin, F
|
|
1999
|
284-285 |
2-3 |
p. 265-268
4 p.
|
artikel
|
| 4 |
Automation and fab concepts for 300 mm wafer manufacturing
|
Binder, Harald
|
|
1999
|
284-285 |
2-3 |
p. 91-100
10 p.
|
artikel
|
| 5 |
Challenges and current status in 300 mm rapid thermal processing
|
Glück, M
|
|
1999
|
284-285 |
2-3 |
p. 237-246
10 p.
|
artikel
|
| 6 |
Challenges for economical growth of high quality 300 mm CZ Si crystals
|
Tomzig, Erich
|
|
1999
|
284-285 |
2-3 |
p. 113-125
13 p.
|
artikel
|
| 7 |
Characterization of 300 mm silicon-polished and EPI wafers
|
Shih, Steven
|
|
1999
|
284-285 |
2-3 |
p. 169-182
14 p.
|
artikel
|
| 8 |
Deep submicron 3D surface metrology for 300 mm wafer characterization using UV coherence microscopy
|
Montgomery, Paul C.
|
|
1999
|
284-285 |
2-3 |
p. 291-297
7 p.
|
artikel
|
| 9 |
Discrimination of particles and defects on silicon wafers
|
Passek, F
|
|
1999
|
284-285 |
2-3 |
p. 191-196
6 p.
|
artikel
|
| 10 |
Effect of the structural state of the melt on the properties of silicon crystals
|
Gubenko, Anatolii Ya
|
|
1999
|
284-285 |
2-3 |
p. 161-168
8 p.
|
artikel
|
| 11 |
Experimental verification of different slip generation models for 300 mm wafers processed in a fast ramp vertical furnace
|
Ritter, G.
|
|
1999
|
284-285 |
2-3 |
p. 225-236
12 p.
|
artikel
|
| 12 |
In-line monitoring of 300 mm silicon epitaxial and CZ wafers using surface charge profiler
|
Kamieniecki, E.
|
|
1999
|
284-285 |
2-3 |
p. 283-289
7 p.
|
artikel
|
| 13 |
Large diameter silicon technology and epitaxy
|
Yamagishi, H.
|
|
1999
|
284-285 |
2-3 |
p. 101-111
11 p.
|
artikel
|
| 14 |
Mechanical strength of 300 mm diameter silicon wafers at high temperatures: modeling and simulation
|
Fischer, A.
|
|
1999
|
284-285 |
2-3 |
p. 209-223
15 p.
|
artikel
|
| 15 |
300 mm Conversion challenge and breakthrough for future semiconductor manufacturing
|
Kuecher, P.
|
|
1999
|
284-285 |
2-3 |
p. 89-
1 p.
|
artikel
|
| 16 |
300 mm Epitaxy: challenges and opportunities from a wafer manufacturer’s point of view
|
Hansson, Per-Ove
|
|
1999
|
284-285 |
2-3 |
p. 127-133
7 p.
|
artikel
|
| 17 |
Novel process control strategies for 300 mm semiconductor production
|
Pfitzner, Lothar
|
|
1999
|
284-285 |
2-3 |
p. 247-256
10 p.
|
artikel
|
| 18 |
Preface
|
Richter, H.
|
|
1999
|
284-285 |
2-3 |
p. 85-86
2 p.
|
artikel
|
| 19 |
SOPRA SE300: a new tool for high accuracy characterization of multilayer structures
|
Boher, Pierre
|
|
1999
|
284-285 |
2-3 |
p. 269-276
8 p.
|
artikel
|
| 20 |
Study of oxygen transport in Czochralski growth of silicon
|
Müller, G.
|
|
1999
|
284-285 |
2-3 |
p. 135-147
13 p.
|
artikel
|
| 21 |
The 300 mm technology – global opportunity for industry and challenges for research
|
|
|
1999
|
284-285 |
2-3 |
p. 87-88
2 p.
|
artikel
|
| 22 |
Three hundred-mm wafers: a technological and an economical challenge
|
Dietrich, Holger
|
|
1999
|
284-285 |
2-3 |
p. 183-190
8 p.
|
artikel
|
| 23 |
Uniform precipitation of oxygen in large diameter wafers
|
Kissinger, G.
|
|
1999
|
284-285 |
2-3 |
p. 155-160
6 p.
|
artikel
|
| 24 |
Vacancy distribution measurements in CZ Si crystals grown by different pulling rate
|
Takano, Yukio
|
|
1999
|
284-285 |
2-3 |
p. 149-154
6 p.
|
artikel
|
| 25 |
X-ray scattering from silicon surfaces: a useful tool for quality control
|
Stömmer, R
|
|
1999
|
284-285 |
2-3 |
p. 257-263
7 p.
|
artikel
|
Tijdschrift beschrijving