| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced PECVD SiCOH low-k films with low dielectric constant and/or high Young’s modulus
|
Verdonck, Patrick
|
|
2014
|
120 |
C |
p. 225-229
5 p.
|
artikel
|
| 2 |
A multilevel sub-modeling approach to evaluate 3D IC packaging induced stress on hybrid interconnect structures
|
Lofrano, M.
|
|
2014
|
120 |
C |
p. 85-89
5 p.
|
artikel
|
| 3 |
Atom probe tomography for advanced metallization
|
Mangelinck, D.
|
|
2014
|
120 |
C |
p. 19-33
15 p.
|
artikel
|
| 4 |
Author Index
|
|
|
2014
|
120 |
C |
p. 262-267
6 p.
|
artikel
|
| 5 |
Beyond Black’s equation: Full-chip EM/SM assessment in 3D IC stack
|
Sukharev, Valeriy
|
|
2014
|
120 |
C |
p. 99-105
7 p.
|
artikel
|
| 6 |
Carbon nanotube based via interconnects: Performance estimation based on the resistance of individual carbon nanotubes
|
Fiedler, Holger
|
|
2014
|
120 |
C |
p. 210-215
6 p.
|
artikel
|
| 7 |
Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer
|
Shishido, Nobuyuki
|
|
2014
|
120 |
C |
p. 71-76
6 p.
|
artikel
|
| 8 |
Design and fabrication of screen-printed silver circuits for stretchable electronics
|
Kim, Kwang-Seok
|
|
2014
|
120 |
C |
p. 216-220
5 p.
|
artikel
|
| 9 |
Effect of alloying elements Mo and W on Ni silicides formation
|
Derafa, A.
|
|
2014
|
120 |
C |
p. 150-156
7 p.
|
artikel
|
| 10 |
Effect of surface finishes on electromigration reliability in eutectic Sn–58Bi solder joints
|
Kim, Jae-Ha
|
|
2014
|
120 |
C |
p. 77-84
8 p.
|
artikel
|
| 11 |
Effect of temperature on advanced Si-based substrates performance for RF passive integration
|
Roda Neve, C.
|
|
2014
|
120 |
C |
p. 205-209
5 p.
|
artikel
|
| 12 |
Effect of via/line temperature inhomogeneity on electromigration fast WLR results and how to get rid of inhomogeneities
|
Traving, M.
|
|
2014
|
120 |
C |
p. 95-98
4 p.
|
artikel
|
| 13 |
Effects of carbon pre-silicidation implant into Si substrate on NiSi
|
Luo, Jun
|
|
2014
|
120 |
C |
p. 178-181
4 p.
|
artikel
|
| 14 |
Electrical properties of Ag/Ta and Ag/TaN thin-films
|
Mardani, Shabnam
|
|
2014
|
120 |
C |
p. 257-261
5 p.
|
artikel
|
| 15 |
Electrochemical fabrication of platinum interconnects for implantable electronic devices
|
Radisic, A.
|
|
2014
|
120 |
C |
p. 251-256
6 p.
|
artikel
|
| 16 |
Electro-thermal finite element analysis and verification of power module with aluminum wire
|
Liao, Li-Ling
|
|
2014
|
120 |
C |
p. 114-120
7 p.
|
artikel
|
| 17 |
Evaluation for interface strength fluctuations induced by inhomogeneous grain structure of Cu line in LSI Interconnects
|
Chen, Chuantong
|
|
2014
|
120 |
C |
p. 52-58
7 p.
|
artikel
|
| 18 |
Formation of compounds and Kirkendall vacancy in the Cu–Sn system
|
O, Minho
|
|
2014
|
120 |
C |
p. 133-137
5 p.
|
artikel
|
| 19 |
From stress sensor towards back end of line embedded thermo-mechanical sensor
|
Arrazat, B.
|
|
2014
|
120 |
C |
p. 41-46
6 p.
|
artikel
|
| 20 |
Growth and integration challenges for carbon nanotube interconnects
|
Vanpaemel, Johannes
|
|
2014
|
120 |
C |
p. 188-193
6 p.
|
artikel
|
| 21 |
HfO x as RRAM material – First principles insights on the working principles
|
Clima, Sergiu
|
|
2014
|
120 |
C |
p. 13-18
6 p.
|
artikel
|
| 22 |
Improvement of adhesion and interfacial diffusion behavior in Cu/glass structures using OsO x layers for microelectromechanical systems
|
Watanabe, Mitsuhiro
|
|
2014
|
120 |
C |
p. 59-66
8 p.
|
artikel
|
| 23 |
Improvement of multilayer graphene quality by current stress during thermal CVD
|
Razak, Liyana Abdul
|
|
2014
|
120 |
C |
p. 200-204
5 p.
|
artikel
|
| 24 |
Influence of metal electrode stoichiometry on the electron barrier height at Cu x Te1− x /Al2O3 interfaces for CBRAM applications
|
De Stefano, Francesca
|
|
2014
|
120 |
C |
p. 9-12
4 p.
|
artikel
|
| 25 |
Inside Front Cover - Editorial Board
|
|
|
2014
|
120 |
C |
p. IFC-
1 p.
|
artikel
|
| 26 |
Investigation of pre-bending substrate design in packaging assembly of an IGBT power module
|
Lee, Chang-Chun
|
|
2014
|
120 |
C |
p. 106-113
8 p.
|
artikel
|
| 27 |
Kinetics of growth and consumption of Ni rich phases
|
Tellouche-Derafa, G.
|
|
2014
|
120 |
C |
p. 146-149
4 p.
|
artikel
|
| 28 |
Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions
|
Bourjot, E.
|
|
2014
|
120 |
C |
p. 163-167
5 p.
|
artikel
|
| 29 |
Low-k a-SiCO:H films as diffusion barriers for advanced interconnects
|
Van Besien, Els
|
|
2014
|
120 |
C |
p. 221-224
4 p.
|
artikel
|
| 30 |
Low temperature chemical vapour synthesis of Cu3Ge thin films for interconnect applications
|
Antony Premkumar, P.
|
|
2014
|
120 |
C |
p. 246-250
5 p.
|
artikel
|
| 31 |
MAM 2013 March 10–13, Leuven Belgium
|
|
|
2014
|
120 |
C |
p. 1-2
2 p.
|
artikel
|
| 32 |
Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation
|
Panciera, F.
|
|
2014
|
120 |
C |
p. 34-40
7 p.
|
artikel
|
| 33 |
Ni(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices
|
Schram, T.
|
|
2014
|
120 |
C |
p. 157-162
6 p.
|
artikel
|
| 34 |
Ni silicide nanowires analysis by atom probe tomography
|
El Kousseifi, M.
|
|
2014
|
120 |
C |
p. 47-51
5 p.
|
artikel
|
| 35 |
Phase formation in intermixed Ni–Ge thin films: Influence of Ge content and low-temperature nucleation of hexagonal nickel germanides
|
De Schutter, B.
|
|
2014
|
120 |
C |
p. 168-173
6 p.
|
artikel
|
| 36 |
Pore sealing of k 2.0 dielectrics assisted by self-assembled monolayers deposited from vapor phase
|
Armini, Silvia
|
|
2014
|
120 |
C |
p. 240-245
6 p.
|
artikel
|
| 37 |
Reliability enhancements of chip-on-chip package with layout designs of microbumps
|
Lee, Chang-Chun
|
|
2014
|
120 |
C |
p. 138-145
8 p.
|
artikel
|
| 38 |
Research on the degradation of AlGaInP Ultra High Brightness LEDs influenced by ohmic metal design
|
Huang, Chien-Fu
|
|
2014
|
120 |
C |
p. 182-187
6 p.
|
artikel
|
| 39 |
Role of NH3 feeding period to realize high-quality nickel films by hot-wire-assisted atomic layer deposition
|
Yuan, Guangjie
|
|
2014
|
120 |
C |
p. 230-234
5 p.
|
artikel
|
| 40 |
Scalability of RuTiN barriers deposited by plasma-enhanced atomic layer deposition for advanced interconnects
|
Swerts, Johan
|
|
2014
|
120 |
C |
p. 235-239
5 p.
|
artikel
|
| 41 |
Scanning probe microscopy as a scalpel to probe filament formation in conductive bridging memory devices
|
Celano, Umberto
|
|
2014
|
120 |
C |
p. 67-70
4 p.
|
artikel
|
| 42 |
Simulation and measurement of the capacitance benefit of air gap interconnects for advanced technology nodes
|
Kumaresan, V.
|
|
2014
|
120 |
C |
p. 90-94
5 p.
|
artikel
|
| 43 |
Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias
|
Djomeni, Larissa
|
|
2014
|
120 |
C |
p. 127-132
6 p.
|
artikel
|
| 44 |
Table of Contents
|
|
|
2014
|
120 |
C |
p. v-vii
nvt p.
|
artikel
|
| 45 |
Thermal properties of In–Sb–Te films and interfaces for phase change memory devices
|
Fallica, Roberto
|
|
2014
|
120 |
C |
p. 3-8
6 p.
|
artikel
|
| 46 |
Thermo-electric finite element analysis and characteristic of thermoelectric generator with intermetallic compound
|
Liao, Li-Ling
|
|
2014
|
120 |
C |
p. 194-199
6 p.
|
artikel
|
| 47 |
Through Silicon Capacitor co-integrated with TSVs on silicon interposer
|
Guiller, O.
|
|
2014
|
120 |
C |
p. 121-126
6 p.
|
artikel
|
| 48 |
Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements
|
Luo, Jun
|
|
2014
|
120 |
C |
p. 174-177
4 p.
|
artikel
|
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