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                             140 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab initio study of high permittivity phase stabilization in HfSiO Fischer, D.
 2007
 9-10 p. 2039-2042
4 p.
 artikel
2 Acknowledgements 2007
 9-10 p. xv-
1 p.
 artikel
3 A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling Roussel, Ph.J.
 2007
 9-10 p. 1925-1928
4 p.
 artikel
4 Amorphous hafnium silicates: structural, electronic and dielectric properties Broqvist, Peter
 2007
 9-10 p. 2416-2419
4 p.
 artikel
5 Analysis of the post-breakdown current in HfO2/TaN/TiN gate stack MOSFETs for low applied biases Miranda, E.
 2007
 9-10 p. 1960-1963
4 p.
 artikel
6 A physics-based deconstruction of the percolation model of oxide breakdown Suñé, J.
 2007
 9-10 p. 1917-1920
4 p.
 artikel
7 Application of combinatorial methodologies for work function engineering of metal gate/high-κ advanced gate stacks Green, M.L.
 2007
 9-10 p. 2209-2212
4 p.
 artikel
8 Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high-κ gate oxides Schaeffer, J.K.
 2007
 9-10 p. 2196-2200
5 p.
 artikel
9 Atomic layer deposition of ZrO2 and HfO2 on deep trenched and planar silicon Kukli, Kaupo
 2007
 9-10 p. 2010-2013
4 p.
 artikel
10 Atomic - vapour - deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications Lukosius, M.
 2007
 9-10 p. 2165-2168
4 p.
 artikel
11 Author Index 2007
 9-10 p. 2420-2439
20 p.
 artikel
12 Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks Leroux, C.
 2007
 9-10 p. 2408-2411
4 p.
 artikel
13 Band-edge metal gate materials for atomic-layer-deposited HfO2 for future CMOS technology Hasan, Musarrat
 2007
 9-10 p. 2205-2208
4 p.
 artikel
14 Band engineering in the high-k dielectrics gate stacks Wang, S.J.
 2007
 9-10 p. 2332-2335
4 p.
 artikel
15 Borderless silicon nitride defect behaviour and their influences on initial data loss in single polysilicon flash memories Beylier, G.
 2007
 9-10 p. 1990-1993
4 p.
 artikel
16 Characterization of chemical bonding features and defect state density in HfSiOx Ny/SiO2 gate stack Ohta, A.
 2007
 9-10 p. 2386-2389
4 p.
 artikel
17 Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements Xiong, H.D.
 2007
 9-10 p. 2230-2234
5 p.
 artikel
18 Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack Samanta, Piyas
 2007
 9-10 p. 1964-1967
4 p.
 artikel
19 Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection Toledano-Luque, M.
 2007
 9-10 p. 1943-1946
4 p.
 artikel
20 Charge trapping in ultrathin Gd2O3 high-k dielectric Nazarov, A.N.
 2007
 9-10 p. 1968-1971
4 p.
 artikel
21 CMOS gate oxide defects induced by pre-gate plasma process Carrère, J-P.
 2007
 9-10 p. 2109-2112
4 p.
 artikel
22 Comparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOS Brammertz, G.
 2007
 9-10 p. 2154-2157
4 p.
 artikel
23 Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance Aguilera, L.
 2007
 9-10 p. 2113-2116
4 p.
 artikel
24 Compound semiconductor MOSFETs Droopad, R.
 2007
 9-10 p. 2138-2141
4 p.
 artikel
25 Concurrent HCI-NBTI: worst case degradation condition for 65 nm p-channel SOI MOSFETs Mishra, R.
 2007
 9-10 p. 2085-2088
4 p.
 artikel
26 Contents 2007
 9-10 p. iv-xii
nvt p.
 artikel
27 Core level photoemission study of nitrided hafnium silicate thin films Barrett, N.
 2007
 9-10 p. 2302-2305
4 p.
 artikel
28 Current transport mechanisms in (HfO2)x(SiO2) 1−x/SiO2gate stacks Mitrovic, I.Z.
 2007
 9-10 p. 2306-2309
4 p.
 artikel
29 Defect reduction by suppression of π-bonding coupling in nano- and non-crystalline high-(medium)-κ gate dielectrics Lucovsky, G.
 2007
 9-10 p. 2350-2353
4 p.
 artikel
30 Development of robust interfaces based on crystalline γ-Al2O3(001) for subsequent deposition of amorphous high-κ oxides Merckling, C.
 2007
 9-10 p. 2243-2246
4 p.
 artikel
31 Device physics of capacitive MEMS Felnhofer, D.
 2007
 9-10 p. 2158-2164
7 p.
 artikel
32 Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain Shickova, A.
 2007
 9-10 p. 1906-1909
4 p.
 artikel
33 Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation Hayama, K.
 2007
 9-10 p. 2125-2128
4 p.
 artikel
34 Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices Choi, C.
 2007
 9-10 p. 2217-2221
5 p.
 artikel
35 Effect of degas before metal gate deposition on the threshold voltage Pétry, J.
 2007
 9-10 p. 2255-2258
4 p.
 artikel
36 Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si Zenkevich, A.
 2007
 9-10 p. 2263-2266
4 p.
 artikel
37 Electrical and material property enhancement in HfTaSiON-gated MOS devices by tuning Hf composition Tsai, Ping-Hung
 2007
 9-10 p. 1902-1905
4 p.
 artikel
38 Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivation Kaczer, B.
 2007
 9-10 p. 2067-2070
4 p.
 artikel
39 Electrical characteristic fluctuations in 16 nm bulk-FinFET devices Li, Yiming
 2007
 9-10 p. 2093-2096
4 p.
 artikel
40 Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application Kawanago, T.
 2007
 9-10 p. 2235-2238
4 p.
 artikel
41 Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs Rafí, J.M.
 2007
 9-10 p. 2081-2084
4 p.
 artikel
42 Electronic structure of insulator-confined ultra-thin Si channels Sushko, P.V.
 2007
 9-10 p. 2043-2046
4 p.
 artikel
43 Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3 Afanas’ev, V.V.
 2007
 9-10 p. 2278-2281
4 p.
 artikel
44 Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties Laha, Apurba
 2007
 9-10 p. 2282-2285
4 p.
 artikel
45 Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer Park, Tae Joo
 2007
 9-10 p. 2226-2229
4 p.
 artikel
46 Epitaxial germanium-on-insulator grown on (001) Si Seo, J.W.
 2007
 9-10 p. 2328-2331
4 p.
 artikel
47 EPR study of defects in as-received, γ-irradiated and annealed monoclinic HfO2 powder Wright, Sandra
 2007
 9-10 p. 2378-2381
4 p.
 artikel
48 Evidence of hafnia oxygen vacancy defects in MOCVD grown Hf x Si1−x O y ultrathin gate dielectrics gated with Ru electrode Ťapajna, M.
 2007
 9-10 p. 2366-2369
4 p.
 artikel
49 Experimental and theoretical study of Ge surface passivation Houssa, M.
 2007
 9-10 p. 2267-2273
7 p.
 artikel
50 Extraction of gate-edge workfunction of metal gate and its impact on scaled MOSFETs Mise, N.
 2007
 9-10 p. 2201-2204
4 p.
 artikel
51 Extrinsic stacking fault generation related to high–k dielectric growth on a Si substrate Volkos, S.N.
 2007
 9-10 p. 2374-2377
4 p.
 artikel
52 Fabrication and characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer Tokumitsu, E.
 2007
 9-10 p. 2018-2021
4 p.
 artikel
53 Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility Liu, Y.X.
 2007
 9-10 p. 2101-2104
4 p.
 artikel
54 First principles investigation of defects at interfaces between silicon and amorphous high-κ oxides Broqvist, Peter
 2007
 9-10 p. 2022-2027
6 p.
 artikel
55 Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates Li, Z.
 2007
 9-10 p. 2213-2216
4 p.
 artikel
56 Gate dielectric formation and MIS interface characterization on Ge Takagi, S.
 2007
 9-10 p. 2314-2319
6 p.
 artikel
57 Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric Mavrou, G.
 2007
 9-10 p. 2324-2327
4 p.
 artikel
58 Hafnium silicate as control oxide in non-volatile memories Erlbacher, T.
 2007
 9-10 p. 2239-2242
4 p.
 artikel
59 HCI degradation model based on the diffusion equation including the MVHR model Lachenal, D.
 2007
 9-10 p. 1921-1924
4 p.
 artikel
60 High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs Cheng, W.
 2007
 9-10 p. 2105-2108
4 p.
 artikel
61 High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs Krishnamohan, T.
 2007
 9-10 p. 2063-2066
4 p.
 artikel
62 Hot-carrier damage from high to low voltage using the energy-driven framework Guerin, C.
 2007
 9-10 p. 1938-1942
5 p.
 artikel
63 Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors Benoit, D.
 2007
 9-10 p. 2169-2172
4 p.
 artikel
64 Hydrogen effects in MOS devices Tsetseris, L.
 2007
 9-10 p. 2344-2349
6 p.
 artikel
65 Hydrogen induced positive charge in Hf-based dielectrics Zhao, C.Z.
 2007
 9-10 p. 2354-2357
4 p.
 artikel
66 III-V field-effect transistors for low power digital logic applications Datta, Suman
 2007
 9-10 p. 2133-2137
5 p.
 artikel
67 Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons Srinivasan, P.
 2007
 9-10 p. 2274-2277
4 p.
 artikel
68 Impact of process conditions on interface and high-κ trap density studied by variable T charge-T discharge charge pumping (VT2CP) Zahid, M.B.
 2007
 9-10 p. 1951-1955
5 p.
 artikel
69 Impact of temperature on non-equilibrium Fowler-Nordheim EEPROM programming Baboux, N.
 2007
 9-10 p. 2006-2009
4 p.
 artikel
70 Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics Martens, K.
 2007
 9-10 p. 2146-2149
4 p.
 artikel
71 Improved electrical characteristics of high-k gated MOS devices by nitrogen incorporation with plasma immersion ion implantation (PIII) Tsai, Ping-Hung
 2007
 9-10 p. 2192-2195
4 p.
 artikel
72 Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO Li, C.X.
 2007
 9-10 p. 2340-2343
4 p.
 artikel
73 Improvement of interfacial properties with interfacial layer in La2O3/Ge structure Song, J.
 2007
 9-10 p. 2336-2339
4 p.
 artikel
74 Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing Chang, Man
 2007
 9-10 p. 2002-2005
4 p.
 artikel
75 Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks Chen, Shih-Chang
 2007
 9-10 p. 1898-1901
4 p.
 artikel
76 Independent double-gate FinFETs with asymmetric gate stacks Masahara, M.
 2007
 9-10 p. 2097-2100
4 p.
 artikel
77 In-depth investigation of the mechanisms impacting C-V/G-V characteristics of Ge/GeON/HfO2/TiN stacks by electrical modeling Batude, P.
 2007
 9-10 p. 2320-2323
4 p.
 artikel
78 INFOS 2007 Conference Committees 2007
 9-10 p. xiv-
1 p.
 artikel
79 Inside Front Cover - Editorial Board 2007
 9-10 p. IFC-
1 p.
 artikel
80 In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction Webb, D.J.
 2007
 9-10 p. 2142-2145
4 p.
 artikel
81 Integration of functional epitaxial oxides into silicon: from high-k application to nanostructures Osten, H.J.
 2007
 9-10 p. 2222-2225
4 p.
 artikel
82 Integration of gas cluster process for copper interconnects reliability improvement and process impact evaluation on BEOL dielectric materials Gras, R.
 2007
 9-10 p. 2184-2187
4 p.
 artikel
83 Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs Kelly, D.Q.
 2007
 9-10 p. 2054-2057
4 p.
 artikel
84 Intrinsic and defect-assisted trapping of electrons and holes in HfO2: an ab initio study Ramo, D. Muñoz
 2007
 9-10 p. 2362-2365
4 p.
 artikel
85 Investigation of polarization mechanisms on unibond buried oxide layer Tsouti, V.
 2007
 9-10 p. 2129-2132
4 p.
 artikel
86 La-based ternary rare-earth oxides as alternative high-κ dielectrics Lopes, J.M.J.
 2007
 9-10 p. 1890-1893
4 p.
 artikel
87 Length scales for coherent π-bonding interactions in complex high-k oxide dielectrics and their interfaces Seo, H.
 2007
 9-10 p. 2298-2301
4 p.
 artikel
88 Long time transients in hafnium oxide Puzzilli, G.
 2007
 9-10 p. 2394-2397
4 p.
 artikel
89 Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(111) Sokolov, N.S.
 2007
 9-10 p. 2247-2250
4 p.
 artikel
90 Low temperature influence on the uniaxially strained FD SOI nMOSFETs behavior de Souza, M.
 2007
 9-10 p. 2121-2124
4 p.
 artikel
91 Materials and device structures for sub-32 nm CMOS nodes Skotnicki, Thomas
 2007
 9-10 p. 1845-1852
8 p.
 artikel
92 Memory technology in the future Kim, Kinam
 2007
 9-10 p. 1976-1981
6 p.
 artikel
93 Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions Lucovsky, G.
 2007
 9-10 p. 2259-2262
4 p.
 artikel
94 Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN San Andrés, E.
 2007
 9-10 p. 1878-1881
4 p.
 artikel
95 Modeling HfO2/SiO2/Si interface Gavartin, J.L.
 2007
 9-10 p. 2412-2415
4 p.
 artikel
96 Modeling of remote Coulomb scattering limited mobility in MOSFET with HfO2/SiO2 gate stacks Barraud, S.
 2007
 9-10 p. 2404-2407
4 p.
 artikel
97 Modified space-charge limited conduction in tantalum pentoxide MIM capacitors Martinez, V.
 2007
 9-10 p. 2310-2313
4 p.
 artikel
98 Modulation of the effective work function of fully-silicided (FUSI) gate stacks Kittl, J.A.
 2007
 9-10 p. 1857-1860
4 p.
 artikel
99 Monitoring plasma nitridation of HfSiOx by corona charge measurements Everaert, J-L.
 2007
 9-10 p. 2251-2254
4 p.
 artikel
100 Monte Carlo simulations of InGaAs nano-MOSFETs Kalna, K.
 2007
 9-10 p. 2358-2361
4 p.
 artikel
101 Monte Carlo simulations of InGaAs nano-MOSFETs Kalna, K.
 2007
 9-10 p. 2150-2153
4 p.
 artikel
102 Multi-gate SOI MOSFETs Colinge, J.P.
 2007
 9-10 p. 2071-2076
6 p.
 artikel
103 Nanoscale imaging and X-ray spectroscopy of electrically active defects in ultra thin dielectrics on silicon Bernardini, S.
 2007
 9-10 p. 2286-2289
4 p.
 artikel
104 Nickel nanoparticle deposition at room temperature for memory applications Verrelli, E.
 2007
 9-10 p. 1994-1997
4 p.
 artikel
105 0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate Ogawa, A.
 2007
 9-10 p. 1861-1864
4 p.
 artikel
106 Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high-κ dielectric N-MOS Flash memory cell Zhang, Y.
 2007
 9-10 p. 1929-1933
5 p.
 artikel
107 On the RTS phenomenon and trap nature in Flash memory tunnel oxide Fantini, P.
 2007
 9-10 p. 1998-2001
4 p.
 artikel
108 Oxide interface studies using second harmonic generation Tolk, N.H.
 2007
 9-10 p. 2089-2092
4 p.
 artikel
109 Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation Ioannou-Sougleridis, V.
 2007
 9-10 p. 1986-1989
4 p.
 artikel
110 Oxygen-related defects in amorphous HfO2 gate dielectrics Kaneta, C.
 2007
 9-10 p. 2370-2373
4 p.
 artikel
111 Oxygen vacancies in high-k oxides Tse, K.
 2007
 9-10 p. 2028-2031
4 p.
 artikel
112 Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET Jo, Minseok
 2007
 9-10 p. 1934-1937
4 p.
 artikel
113 Performance and reliability of ultra-thin oxide nMOSFETs under variable body bias Crupi, F.
 2007
 9-10 p. 1947-1950
4 p.
 artikel
114 Performance assessment of (110) p-FET high-κ/MG: is it mobility or series resistance limited? Trojman, L.
 2007
 9-10 p. 2058-2062
5 p.
 artikel
115 Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an aluminum oxide (AlO) capping layer Singanamalla, R.
 2007
 9-10 p. 1865-1868
4 p.
 artikel
116 Preface Dimoulas, A.
 2007
 9-10 p. xiii-
1 p.
 artikel
117 Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale CMOS and SOI devices Li, Yiming
 2007
 9-10 p. 2117-2120
4 p.
 artikel
118 Protons at the Si-SiO2 interface: a first principle investigation Godet, Julien
 2007
 9-10 p. 2035-2038
4 p.
 artikel
119 Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients Lu, Y.
 2007
 9-10 p. 2390-2393
4 p.
 artikel
120 Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks Narayanan, V.
 2007
 9-10 p. 1853-1856
4 p.
 artikel
121 Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks Ferain, I.
 2007
 9-10 p. 1882-1885
4 p.
 artikel
122 Reliability degradation of HfSiO gate dielectric layers: influence of nitridation Vellianitis, G.
 2007
 9-10 p. 1972-1975
4 p.
 artikel
123 Reliability issues for nano-scale CMOS dielectrics Ribes, G.
 2007
 9-10 p. 1910-1916
7 p.
 artikel
124 Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks Efthymiou, E.
 2007
 9-10 p. 2290-2293
4 p.
 artikel
125 Resistive switching in a Pt/TiO2/Pt thin film stack – a candidate for a non-volatile ReRAM Schroeder, Herbert
 2007
 9-10 p. 1982-1985
4 p.
 artikel
126 Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications Asenov, A.
 2007
 9-10 p. 2398-2403
6 p.
 artikel
127 Slow oxide trap density profile extraction using gate current low-frequency noise in ultrathin oxide MOSFETs Armand, J.
 2007
 9-10 p. 2382-2385
4 p.
 artikel
128 SrHfO3 as gate dielectric for future CMOS technology Rossel, C.
 2007
 9-10 p. 1869-1873
5 p.
 artikel
129 Stable and robust low-voltage pentacene transistor based on a hybrid dielectric Han, K.
 2007
 9-10 p. 2173-2176
4 p.
 artikel
130 Strain and channel engineering for fully depleted SOI MOSFETs towards the 32 nm technology node Andrieu, F.
 2007
 9-10 p. 2047-2053
7 p.
 artikel
131 Studies of solution processed metal oxides on silicon Shanmugasundaram, K.
 2007
 9-10 p. 2294-2297
4 p.
 artikel
132 Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution Porti, M.
 2007
 9-10 p. 1956-1959
4 p.
 artikel
133 The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors Juan, P.C.
 2007
 9-10 p. 2014-2017
4 p.
 artikel
134 The evolution of multi-level air gap integration towards 32 nm node interconnects Daamen, R.
 2007
 9-10 p. 2177-2183
7 p.
 artikel
135 The impact of mobility enhanced technology on device performance and reliability for sub-90 nm SOI nMOSFETs Yeh, Wen-Kuan
 2007
 9-10 p. 2077-2080
4 p.
 artikel
136 The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs Negara, M.A.
 2007
 9-10 p. 1874-1877
4 p.
 artikel
137 Theoretical analysis of high-k dielectric gate stacks Demkov, A.A.
 2007
 9-10 p. 2032-2034
3 p.
 artikel
138 Thermal-stability improvement of LaON thin film formed using nitrogen radicals Sato, S.
 2007
 9-10 p. 1894-1897
4 p.
 artikel
139 Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques Cosnier, V.
 2007
 9-10 p. 1886-1889
4 p.
 artikel
140 UV-O3 treatment effects on structural changes of low-k thin films Heo, Jaeyeong
 2007
 9-10 p. 2188-2191
4 p.
 artikel
                             140 gevonden resultaten
 
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