| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate analysis of parasitic current overshoot during forming operation in RRAMs
|
Tirano, S.
|
|
2011
|
|
7 |
p. 1129-1132
4 p.
|
artikel
|
| 2 |
A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology
|
Valenza, M.
|
|
2011
|
|
7 |
p. 1298-1300
3 p.
|
artikel
|
| 3 |
AC response analysis of C–V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces
|
Taoka, Noriyuki
|
|
2011
|
|
7 |
p. 1087-1090
4 p.
|
artikel
|
| 4 |
A FinFET memory with remote carrier trapping in ONO buried insulator
|
Chang, S.-J.
|
|
2011
|
|
7 |
p. 1203-1206
4 p.
|
artikel
|
| 5 |
A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric
|
Fu, C.H.
|
|
2011
|
|
7 |
p. 1309-1311
3 p.
|
artikel
|
| 6 |
An impedance-based approach to predict the state-of-charge for carbon-based supercapacitors
|
Li, Zhongxue
|
|
2008
|
|
7 |
p. 1549-1554
6 p.
|
artikel
|
| 7 |
Anodic dissolution characteristics and electrochemical migration lifetimes of Sn solder in NaCl and Na2SO4 solutions
|
Jung, Ja-Young
|
|
2008
|
|
7 |
p. 1597-1602
6 p.
|
artikel
|
| 8 |
Anomalous acid diffusion in a triphenylene molecular resist with melamine crosslinker
|
Zaid, H.M.
|
|
2008
|
|
7 |
p. 1540-1544
5 p.
|
artikel
|
| 9 |
A non-fluorine mold release agent for Ni stamp in nanoimprint process
|
Chang, Tien-Li
|
|
2008
|
|
7 |
p. 1608-1612
5 p.
|
artikel
|
| 10 |
A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium
|
Wu, Dake
|
|
2008
|
|
7 |
p. 1490-1494
5 p.
|
artikel
|
| 11 |
A simple and versatile method for statistical analysis of the electrical properties of individual double walled carbon nanotubes
|
Seichepine, Florent
|
|
2011
|
|
7 |
p. 1637-1639
3 p.
|
artikel
|
| 12 |
A study of SnAgCu solder paste transfer efficiency and effects of optimal reflow profile on solder deposits
|
Amalu, E.H.
|
|
2011
|
|
7 |
p. 1610-1617
8 p.
|
artikel
|
| 13 |
Atomic bonding and disorder at Ge:GeO2 interfaces
|
Li, H.
|
|
2011
|
|
7 |
p. 1564-1568
5 p.
|
artikel
|
| 14 |
Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics
|
Chang, Y.C.
|
|
2011
|
|
7 |
p. 1207-1210
4 p.
|
artikel
|
| 15 |
Atomic-layer-deposited tantalum silicate as a gate dielectric for III–V MOS devices
|
Adelmann, C.
|
|
2011
|
|
7 |
p. 1098-1100
3 p.
|
artikel
|
| 16 |
Atomic layer deposition of Al2O3 on S-passivated Ge
|
Sioncke, S.
|
|
2011
|
|
7 |
p. 1553-1556
4 p.
|
artikel
|
| 17 |
Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen
|
Nakasaki, Yasushi
|
|
2011
|
|
7 |
p. 1457-1460
4 p.
|
artikel
|
| 18 |
Author Index
|
|
|
2011
|
|
7 |
p. 1640-1657
18 p.
|
artikel
|
| 19 |
Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks
|
Fadida, S.
|
|
2011
|
|
7 |
p. 1557-1559
3 p.
|
artikel
|
| 20 |
Band offsets at Ge/GeO2 interfaces: Effect of different interfacial bonding patterns
|
Broqvist, Peter
|
|
2011
|
|
7 |
p. 1467-1470
4 p.
|
artikel
|
| 21 |
Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study
|
Afanas’ev, V.V.
|
|
2011
|
|
7 |
p. 1050-1053
4 p.
|
artikel
|
| 22 |
BE-TANOS: Feasibility and technology limitations
|
Ghidini, G.
|
|
2011
|
|
7 |
p. 1182-1185
4 p.
|
artikel
|
| 23 |
Bias dependence of PBTI degradation mechanism in metal-oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric
|
Jang, Tae-Young
|
|
2011
|
|
7 |
p. 1373-1375
3 p.
|
artikel
|
| 24 |
Bipolar resistive switching effect in Gd2O3 films for transparent memory application
|
Liu, Kou-Chen
|
|
2011
|
|
7 |
p. 1586-1589
4 p.
|
artikel
|
| 25 |
Changes in effective work function of Hf x Ru1−x alloy gate electrode
|
Nabatame, T.
|
|
2008
|
|
7 |
p. 1524-1528
5 p.
|
artikel
|
| 26 |
Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy
|
Matsui, Masafumi
|
|
2011
|
|
7 |
p. 1549-1552
4 p.
|
artikel
|
| 27 |
Characterization of ion/electron beam induced deposition of electrical contacts at the sub-μm scale
|
Brunel, D.
|
|
2011
|
|
7 |
p. 1569-1572
4 p.
|
artikel
|
| 28 |
Characterization of negative-type photoresists containing polyhedral oligomeric silsesquioxane methacrylate
|
Lin, Ho-May
|
|
2008
|
|
7 |
p. 1624-1628
5 p.
|
artikel
|
| 29 |
Charge transport in high-κ stacks for charge-trapping memory applications: A modeling perspective (invited)
|
Larcher, Luca
|
|
2011
|
|
7 |
p. 1168-1173
6 p.
|
artikel
|
| 30 |
Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs
|
Kim, Ki-Won
|
|
2011
|
|
7 |
p. 1225-1227
3 p.
|
artikel
|
| 31 |
Charge trapping in substoichiometric germanium oxide
|
Binder, Jan Felix
|
|
2011
|
|
7 |
p. 1428-1431
4 p.
|
artikel
|
| 32 |
Charge-trapping MOS memory structure using anodic alumina charging medium
|
Hourdakis, E.
|
|
2011
|
|
7 |
p. 1573-1575
3 p.
|
artikel
|
| 33 |
CHC degradation of strained devices based on SiON and high-k gate dielectric materials
|
Amat, E.
|
|
2011
|
|
7 |
p. 1408-1411
4 p.
|
artikel
|
| 34 |
Composition and electrical characteristics of Al2O3–HfO2–HfTiO nanolaminates on Si
|
Mikhelashvili, V.
|
|
2008
|
|
7 |
p. 1545-1548
4 p.
|
artikel
|
| 35 |
Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress
|
Ji, Kwang Hwan
|
|
2011
|
|
7 |
p. 1412-1416
5 p.
|
artikel
|
| 36 |
Copper cleaning in supercritical CO2 for the microprocessor interconnects
|
Ventosa, C.
|
|
2008
|
|
7 |
p. 1629-1638
10 p.
|
artikel
|
| 37 |
Defect gap states on III–V semiconductor–oxide interfaces (invited)
|
Robertson, J.
|
|
2011
|
|
7 |
p. 1440-1443
4 p.
|
artikel
|
| 38 |
Defects-induced gap states in hydrogenated γ-alumina used as blocking layer for non-volatile memories
|
Masoero, L.
|
|
2011
|
|
7 |
p. 1448-1451
4 p.
|
artikel
|
| 39 |
Development of manipulation technology of ferroelectric polymer film: Photo-lithographic patterning and multilayer formation
|
Kim, Woo Young
|
|
2011
|
|
7 |
p. 1576-1581
6 p.
|
artikel
|
| 40 |
Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures
|
Tataroğlu, A.
|
|
2008
|
|
7 |
p. 1518-1523
6 p.
|
artikel
|
| 41 |
Dielectric reliability of 70nm pitch air-gap interconnect structures
|
Pantouvaki, Marianna
|
|
2011
|
|
7 |
p. 1618-1622
5 p.
|
artikel
|
| 42 |
Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (001) using scanning tunneling microscopy
|
Chiu, Y.P.
|
|
2011
|
|
7 |
p. 1058-1060
3 p.
|
artikel
|
| 43 |
3D simulation of triple-gate MOSFETs with different mobility regions
|
Conde, J.
|
|
2011
|
|
7 |
p. 1633-1636
4 p.
|
artikel
|
| 44 |
Effect of biasing at elevated temperature on the electronic structure of Pt/HfO2/Si stacks
|
Matveyev, Yu.
|
|
2011
|
|
7 |
p. 1353-1356
4 p.
|
artikel
|
| 45 |
Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma
|
Efremov, Alexander
|
|
2008
|
|
7 |
p. 1584-1589
6 p.
|
artikel
|
| 46 |
Effect of high temperature annealing on tunnel oxide properties in TANOS devices
|
Arreghini, A.
|
|
2011
|
|
7 |
p. 1155-1158
4 p.
|
artikel
|
| 47 |
Effect of plasma treatments on interface adhesion between SiOCH ultra-low-k film and SiCN etch stop layer
|
Tsai, Hung-Chun
|
|
2008
|
|
7 |
p. 1658-1663
6 p.
|
artikel
|
| 48 |
Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2O3
|
Kitayama, D.
|
|
2011
|
|
7 |
p. 1330-1333
4 p.
|
artikel
|
| 49 |
Effects of channel layer thickness on the electrical characteristics of top-gate staggered microcrystalline-Si thin-film transistors
|
Juang, M.-H.
|
|
2011
|
|
7 |
p. 1582-1585
4 p.
|
artikel
|
| 50 |
Effects of Co addition in eutectic Sn–3.5Ag solder on shear strength and microstructural development
|
Lee, Jung-Sub
|
|
2008
|
|
7 |
p. 1577-1583
7 p.
|
artikel
|
| 51 |
Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature
|
Chun, Yoon Soo
|
|
2011
|
|
7 |
p. 1590-1593
4 p.
|
artikel
|
| 52 |
Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes
|
Hudec, Boris
|
|
2011
|
|
7 |
p. 1514-1516
3 p.
|
artikel
|
| 53 |
Electromagnetic force-assisted imprint technology for fabrication of submicron-structure
|
Hocheng, H.
|
|
2008
|
|
7 |
p. 1652-1657
6 p.
|
artikel
|
| 54 |
Electronic and optical properties of hafnia polymorphs
|
Perevalov, T.V.
|
|
2011
|
|
7 |
p. 1475-1477
3 p.
|
artikel
|
| 55 |
Electron spin resonance study of defects in low-κ oxide insulators (κ =2.5–2.0)
|
Afanas’ev, V.V.
|
|
2011
|
|
7 |
p. 1503-1506
4 p.
|
artikel
|
| 56 |
Electron tunneling in MIS capacitors with the MBE-grown fluoride layers on Si(111) and Ge(111): Role of transverse momentum conservation
|
Illarionov, Y.Y.
|
|
2011
|
|
7 |
p. 1291-1294
4 p.
|
artikel
|
| 57 |
Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel
|
Liu, Li-Jung
|
|
2011
|
|
7 |
p. 1159-1163
5 p.
|
artikel
|
| 58 |
Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling
|
Frank, Martin M.
|
|
2011
|
|
7 |
p. 1312-1316
5 p.
|
artikel
|
| 59 |
Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application
|
Niu, G.
|
|
2011
|
|
7 |
p. 1232-1235
4 p.
|
artikel
|
| 60 |
Evaluation of process parameter space of bulk FinFETs using 3D TCAD
|
Nawaz, Muhammad
|
|
2008
|
|
7 |
p. 1529-1539
11 p.
|
artikel
|
| 61 |
Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization
|
Young, C.D.
|
|
2011
|
|
7 |
p. 1255-1258
4 p.
|
artikel
|
| 62 |
Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM
|
Raghavan, Nagarajan
|
|
2011
|
|
7 |
p. 1124-1128
5 p.
|
artikel
|
| 63 |
Experimental investigation of ESD design window for fully depleted SOI N-MOSFETs
|
Benoist, Thomas
|
|
2011
|
|
7 |
p. 1276-1279
4 p.
|
artikel
|
| 64 |
Experimental observations on nonlinear phenomena in transducer assembly for thermosonic Flip-Chip bonding
|
Han, Lei
|
|
2008
|
|
7 |
p. 1568-1576
9 p.
|
artikel
|
| 65 |
Fabrication and electrical characteristics of Schottky diode based on organic material
|
Güllü, Ö.
|
|
2008
|
|
7 |
p. 1647-1651
5 p.
|
artikel
|
| 66 |
Fabrication of a nano-scale embedded metal electrode in flexible films by UV/thermal nanoimprint lithography tools
|
Park, S.Y.
|
|
2011
|
|
7 |
p. 1606-1609
4 p.
|
artikel
|
| 67 |
Fabrication of large area nano-rings for MRAM application
|
Luo, Yong
|
|
2008
|
|
7 |
p. 1555-1560
6 p.
|
artikel
|
| 68 |
Fabrication of ultra high aspect ratio Bragg gratings for optical filter
|
Sardo, Stefano
|
|
2008
|
|
7 |
p. 1511-1513
3 p.
|
artikel
|
| 69 |
Filament diffusion model for simulating reset and retention processes in RRAM
|
Larentis, S.
|
|
2011
|
|
7 |
p. 1119-1123
5 p.
|
artikel
|
| 70 |
From defects creation to circuit reliability – A bottom-up approach (invited)
|
Huard, V.
|
|
2011
|
|
7 |
p. 1396-1407
12 p.
|
artikel
|
| 71 |
Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET
|
Wan, J.
|
|
2011
|
|
7 |
p. 1301-1304
4 p.
|
artikel
|
| 72 |
Ge-related impurities in high-k oxides: Carrier traps and interaction with native defects
|
Golias, E.
|
|
2011
|
|
7 |
p. 1432-1435
4 p.
|
artikel
|
| 73 |
Grain boundary mediated leakage current in polycrystalline HfO2 films
|
McKenna, K.
|
|
2011
|
|
7 |
p. 1272-1275
4 p.
|
artikel
|
| 74 |
Graphene: Materials to devices (invited)
|
Chae, J.
|
|
2011
|
|
7 |
p. 1211-1213
3 p.
|
artikel
|
| 75 |
Hybrid EB-writing technique with 100kV-SB and 50kV-VSB writers: Use of the former for outlines and the latter for bodies after pattern data splitting
|
Fujita, Hiroshi
|
|
2008
|
|
7 |
p. 1514-1517
4 p.
|
artikel
|
| 76 |
ICP-RIE etching of self-aligned InP based HBTs with Cl2/N2 chemistry
|
Topaloglu, S.
|
|
2011
|
|
7 |
p. 1601-1605
5 p.
|
artikel
|
| 77 |
Identification of defect levels at In x Ga 1 - x As/oxide interfaces through hybrid functionals
|
Komsa, Hannu-Pekka
|
|
2011
|
|
7 |
p. 1436-1439
4 p.
|
artikel
|
| 78 |
Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HfO2/interface-layer gate-stack MOSFETs
|
Matsuki, T.
|
|
2011
|
|
7 |
p. 1421-1424
4 p.
|
artikel
|
| 79 |
III–V nMOSFETs – Some issues associated with roadmap worthiness (invited)
|
Thayne, Iain
|
|
2011
|
|
7 |
p. 1070-1075
6 p.
|
artikel
|
| 80 |
Impact of GeO x interfacial layer thickness on Al2O3/Ge MOS interface properties
|
Zhang, R.
|
|
2011
|
|
7 |
p. 1533-1536
4 p.
|
artikel
|
| 81 |
Impact of insertion of ultrathin TaO x layer at the Pt/TiO2 interface on resistive switching characteristics
|
Wei, Guobin
|
|
2011
|
|
7 |
p. 1152-1154
3 p.
|
artikel
|
| 82 |
Improved electrical characteristics and reliability of Ge MOSFET device with nitrided high-k gate dielectric by plasma immersion ion implantation
|
Fu, Chung-Hao
|
|
2011
|
|
7 |
p. 1560-1563
4 p.
|
artikel
|
| 83 |
Improved EOT and leakage current for metal–insulator–metal capacitor stacks with rutile TiO2
|
Popovici, Mihaela
|
|
2011
|
|
7 |
p. 1517-1520
4 p.
|
artikel
|
| 84 |
Improved low frequency noise model for MOSFET operated in non-linear region
|
Boutchacha, T.
|
|
2011
|
|
7 |
p. 1280-1282
3 p.
|
artikel
|
| 85 |
Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
|
Wang, Sheng-Yu
|
|
2011
|
|
7 |
p. 1628-1632
5 p.
|
artikel
|
| 86 |
Improved retention characteristic of charge-trapped flash device with sealing layer/Al2O3 or Al2O3/high-k stacked blocking layers
|
Ye, Zong-Hao
|
|
2011
|
|
7 |
p. 1194-1197
4 p.
|
artikel
|
| 87 |
Improvement of replication accuracy of micro-featured molding using gas-assisted heating for mold surface
|
Chen, Shia Chung
|
|
2011
|
|
7 |
p. 1594-1600
7 p.
|
artikel
|
| 88 |
Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques
|
Zade, D.
|
|
2011
|
|
7 |
p. 1109-1112
4 p.
|
artikel
|
| 89 |
Influence of La substitution on the electrical properties of metal–ferroelectric (BiFeO3)-insulator (CeO2)-semiconductor nonvolatile memory structures
|
Juan, Pi-Chun
|
|
2011
|
|
7 |
p. 1217-1220
4 p.
|
artikel
|
| 90 |
Influence of mechanical stress on adhesion properties of DC magnetron sputtered Ti/NiV/Ag layers on n+Si substrate
|
Resnik, D.
|
|
2008
|
|
7 |
p. 1603-1607
5 p.
|
artikel
|
| 91 |
Influence of metal gate and capping film stress on TANOS cell performance
|
Czernohorsky, M.
|
|
2011
|
|
7 |
p. 1178-1181
4 p.
|
artikel
|
| 92 |
Inherent interfacial Si dangling bond point defects in thermal (110)Si/SiO2
|
Keunen, K.
|
|
2011
|
|
7 |
p. 1492-1494
3 p.
|
artikel
|
| 93 |
Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics
|
Martínez-Domingo, C.
|
|
2011
|
|
7 |
p. 1380-1383
4 p.
|
artikel
|
| 94 |
Inside Front Cover - Editorial Board
|
|
|
2008
|
|
7 |
p. IFC-
1 p.
|
artikel
|
| 95 |
Inside Front Cover - Editorial Board
|
|
|
2011
|
|
7 |
p. IFC-
1 p.
|
artikel
|
| 96 |
In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(001)-4×6 surface
|
Chang, Y.H.
|
|
2011
|
|
7 |
p. 1101-1104
4 p.
|
artikel
|
| 97 |
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
|
Timm, R.
|
|
2011
|
|
7 |
p. 1091-1094
4 p.
|
artikel
|
| 98 |
Interfaces and performance: What future for nanoscale Ge and SiGe based CMOS?
|
Le Royer, C.
|
|
2011
|
|
7 |
p. 1541-1548
8 p.
|
artikel
|
| 99 |
Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric
|
Negara, Muhammad Adi
|
|
2011
|
|
7 |
p. 1095-1097
3 p.
|
artikel
|
| 100 |
Interface states characterization in heterojunction solar cells from CV–GV measurements and modeling
|
Garros, X.
|
|
2011
|
|
7 |
p. 1247-1250
4 p.
|
artikel
|
| 101 |
Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs
|
Li, Yiming
|
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2011
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7 |
p. 1269-1271
3 p.
|
artikel
|
| 102 |
Interfacial reactions of Gd- and Nb-oxide based high-k layers deposited by aqueous chemical solution deposition
|
Dewulf, D.
|
|
2011
|
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7 |
p. 1338-1341
4 p.
|
artikel
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| 103 |
Investigation of bulk defects in amorphous and crystalline HfO2 thin films
|
Modreanu, M.
|
|
2011
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7 |
p. 1499-1502
4 p.
|
artikel
|
| 104 |
Investigation of reoxidation mechanisms in nitrided tunnel oxides for Flash memory applications
|
Breil, N.
|
|
2011
|
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7 |
p. 1186-1188
3 p.
|
artikel
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| 105 |
Is interfacial chemistry correlated to gap states for high-k/III–V interfaces?
|
Wang, W.
|
|
2011
|
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7 |
p. 1061-1065
5 p.
|
artikel
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| 106 |
Lanthanum diffusion in the TiN/LaO x /HfSiO/SiO2/Si stack
|
Martinez, E.
|
|
2011
|
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7 |
p. 1349-1352
4 p.
|
artikel
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| 107 |
LaScO3 as a higher-κ dielectric for p-MOSFETs
|
Durğun Özben, E.
|
|
2011
|
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7 |
p. 1323-1325
3 p.
|
artikel
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| 108 |
Local oxidation of titanium films by non-contact atomic force microscopy
|
Fang, Te-Hua
|
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2008
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7 |
p. 1616-1623
8 p.
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artikel
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| 109 |
Low-frequency noise in SOI pseudo-MOSFET with pressure probes
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El Hajj Diab, A.
|
|
2011
|
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7 |
p. 1283-1285
3 p.
|
artikel
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| 110 |
Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires (invited)
|
Fanciulli, M.
|
|
2011
|
|
7 |
p. 1482-1487
6 p.
|
artikel
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| 111 |
Materials and process aspect of cross-point RRAM (invited)
|
Lee, Joonmyoung
|
|
2011
|
|
7 |
p. 1113-1118
6 p.
|
artikel
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| 112 |
Mechanical properties and fracture mechanism of porous SiOCH low-k dielectrics
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Chang, H.L.
|
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2011
|
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7 |
p. 1623-1627
5 p.
|
artikel
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| 113 |
Metal–insulator–metal capacitors with MOCVD grown Ce–Al–O as a dielectric
|
Lukosius, M.
|
|
2011
|
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7 |
p. 1529-1532
4 p.
|
artikel
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| 114 |
Millisecond flash-lamp annealing of LaLuO3
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Lehmann, J.
|
|
2011
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7 |
p. 1346-1348
3 p.
|
artikel
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| 115 |
MIM in 3D: Dream or reality? (invited)
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Klootwijk, J.H.
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2011
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7 |
p. 1507-1513
7 p.
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artikel
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| 116 |
Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates
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Umana-Membreno, G.A.
|
|
2011
|
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7 |
p. 1079-1082
4 p.
|
artikel
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| 117 |
Model for the leakage current decay in high-field stressed Al/HfYO x /GaAs structures
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Miranda, E.
|
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2011
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7 |
p. 1295-1297
3 p.
|
artikel
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| 118 |
Moore’s crystal ball: Device physics and technology past the 15nm generation
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Kuhn, Kelin J.
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2011
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7 |
p. 1044-1049
6 p.
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artikel
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| 119 |
Morphology evolution in TiN/Al–0.5Cu/Ti interconnection during chamber long stay and post-deposition annealing correlated to defect formation in metallization processing
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Li, Ming-Yen
|
|
2008
|
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7 |
p. 1502-1510
9 p.
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artikel
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| 120 |
MOS devices with tetragonal ZrO2 as gate dielectric formed by annealing ZrO2/Ge/ZrO2 laminate
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Wu, Yung-Hsien
|
|
2011
|
|
7 |
p. 1361-1364
4 p.
|
artikel
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| 121 |
Nanoanalysis of a sub-nanometre reaction layer in a metal inserted high-k gate stack
|
Craven, A.J.
|
|
2011
|
|
7 |
p. 1488-1491
4 p.
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artikel
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| 122 |
Nano-scale metallization of Au on flexible polyimide substrate by reversal imprint and lift-off process
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Chen, Henry J.H.
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|
2008
|
|
7 |
p. 1561-1567
7 p.
|
artikel
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| 123 |
Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-κ/metal gate bulk FinFET devices
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Li, Yiming
|
|
2011
|
|
7 |
p. 1240-1242
3 p.
|
artikel
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| 124 |
NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance
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Ayala, N.
|
|
2011
|
|
7 |
p. 1384-1387
4 p.
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artikel
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| 125 |
New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs
|
El Husseini, J.
|
|
2011
|
|
7 |
p. 1286-1290
5 p.
|
artikel
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| 126 |
1.2nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
|
El Kazzi, M.
|
|
2011
|
|
7 |
p. 1066-1069
4 p.
|
artikel
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| 127 |
On the dynamic NBTI of the HfO2 and HfSiON P–MOSFET
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Gao, Y.
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2011
|
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7 |
p. 1392-1395
4 p.
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artikel
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| 128 |
On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes
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Altındal, Ş.
|
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2008
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7 |
p. 1495-1501
7 p.
|
artikel
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| 129 |
On the identification of the oxygen vacancy in HfO2
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Clark, S.J.
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2011
|
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7 |
p. 1464-1466
3 p.
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artikel
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| 130 |
On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs
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Franco, J.
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2011
|
|
7 |
p. 1388-1391
4 p.
|
artikel
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| 131 |
On the mechanisms limiting mobility in InP/InGaAs buried channel nMISFETs
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Urabe, Y.
|
|
2011
|
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7 |
p. 1076-1078
3 p.
|
artikel
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| 132 |
Optimization of gate stack parameters towards 3D-SONOS application
|
Breuil, L.
|
|
2011
|
|
7 |
p. 1164-1167
4 p.
|
artikel
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| 133 |
Optimization of hafnium oxide for use in nanoparticle memories
|
Verrelli, E.
|
|
2011
|
|
7 |
p. 1189-1193
5 p.
|
artikel
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| 134 |
Optimizations of a photoresist coating process for photolithography in wafer manufacture via a radial basis neural network: A case study
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Shie, Jie-Ren
|
|
2008
|
|
7 |
p. 1664-1670
7 p.
|
artikel
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| 135 |
O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides
|
Lucovsky, G.
|
|
2011
|
|
7 |
p. 1471-1474
4 p.
|
artikel
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| 136 |
Patterning a nanowell sensor biochip for specific and rapid detection of bacteria
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Seo, Sungkyu
|
|
2008
|
|
7 |
p. 1484-1489
6 p.
|
artikel
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| 137 |
Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method
|
Kim, Dong-Seok
|
|
2011
|
|
7 |
p. 1221-1224
4 p.
|
artikel
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| 138 |
Performance of (110) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes
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Ohata, A.
|
|
2011
|
|
7 |
p. 1265-1268
4 p.
|
artikel
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| 139 |
Phase stabilization of sputtered strontium zirconate
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Grube, M.
|
|
2011
|
|
7 |
p. 1326-1329
4 p.
|
artikel
|
| 140 |
Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)
|
Pey, Kin Leong
|
|
2011
|
|
7 |
p. 1365-1372
8 p.
|
artikel
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| 141 |
Polarimetry of illumination for 193nm immersion lithography
|
Nomura, Hiroshi
|
|
2008
|
|
7 |
p. 1671-1675
5 p.
|
artikel
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| 142 |
Post-deposition processing and oxygen content of TiO2-based capacitors
|
Fröhlich, K.
|
|
2011
|
|
7 |
p. 1525-1528
4 p.
|
artikel
|
| 143 |
Preface
|
|
|
2011
|
|
7 |
p. 1043-
1 p.
|
artikel
|
| 144 |
Radiation effects in new materials for nano-devices
|
Schrimpf, R.D.
|
|
2011
|
|
7 |
p. 1259-1264
6 p.
|
artikel
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| 145 |
Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study
|
Bayerl, A.
|
|
2011
|
|
7 |
p. 1334-1337
4 p.
|
artikel
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| 146 |
Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs
|
Sonnet, A.M.
|
|
2011
|
|
7 |
p. 1083-1086
4 p.
|
artikel
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| 147 |
Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2
|
Lucovsky, G.
|
|
2011
|
|
7 |
p. 1537-1540
4 p.
|
artikel
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| 148 |
Resistance switching in HfO2-based OxRRAM devices
|
Calka, P.
|
|
2011
|
|
7 |
p. 1140-1142
3 p.
|
artikel
|
| 149 |
Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
|
Walczyk, D.
|
|
2011
|
|
7 |
p. 1133-1135
3 p.
|
artikel
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| 150 |
Resistive switching characteristics of solution-processed TiO x for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility
|
Jung, Seungjae
|
|
2011
|
|
7 |
p. 1143-1147
5 p.
|
artikel
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| 151 |
Resistive switching characteristics of ultra-thin TiO x
|
Park, Jubong
|
|
2011
|
|
7 |
p. 1136-1139
4 p.
|
artikel
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| 152 |
Shallow trench isolation based on selective formation of oxidized porous silicon
|
Gharbi, A.
|
|
2011
|
|
7 |
p. 1214-1216
3 p.
|
artikel
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| 153 |
Shifting Schottky barrier heights with ultra-thin dielectric layers
|
Lin, L.
|
|
2011
|
|
7 |
p. 1461-1463
3 p.
|
artikel
|
| 154 |
Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material
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Baristiran Kaynak, C.
|
|
2011
|
|
7 |
p. 1521-1524
4 p.
|
artikel
|
| 155 |
SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum
|
Delcroix, P.
|
|
2011
|
|
7 |
p. 1376-1379
4 p.
|
artikel
|
| 156 |
Soft breakdown in irradiated high-κ nanolaminates
|
Palumbo, F.
|
|
2011
|
|
7 |
p. 1425-1427
3 p.
|
artikel
|
| 157 |
Stability and charge transfer at the interface between SiC(0001) and epitaxial graphene
|
Sclauzero, Gabriele
|
|
2011
|
|
7 |
p. 1478-1481
4 p.
|
artikel
|
| 158 |
Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer
|
Congedo, G.
|
|
2011
|
|
7 |
p. 1174-1177
4 p.
|
artikel
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| 159 |
Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (100)
|
Posadas, A.
|
|
2011
|
|
7 |
p. 1444-1447
4 p.
|
artikel
|
| 160 |
Study of CVD nanowire high-k metal interface quality for interconnect level MOS devices
|
Morel, P.H.
|
|
2011
|
|
7 |
p. 1228-1231
4 p.
|
artikel
|
| 161 |
Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks
|
Mitrovic, I.Z.
|
|
2011
|
|
7 |
p. 1495-1498
4 p.
|
artikel
|
| 162 |
Study on electrical characteristics and reliability of fluorinated HfO2 for HKMG
|
Lee, J.C.
|
|
2011
|
|
7 |
p. 1417-1420
4 p.
|
artikel
|
| 163 |
Surface modification on plating-based Cu/Sn/0.7Cu lead-free copper pillars by using polishing
|
Hsu, Hou jun
|
|
2008
|
|
7 |
p. 1590-1596
7 p.
|
artikel
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| 164 |
Synthesis of gallium oxide nanowires and their electrical properties
|
Li, Zijiong
|
|
2008
|
|
7 |
p. 1613-1615
3 p.
|
artikel
|
| 165 |
Table of Contents
|
|
|
2011
|
|
7 |
p. v-xii
nvt p.
|
artikel
|
| 166 |
Temperature and annealing effects on InAs nanowire MOSFETs
|
Johansson, S.
|
|
2011
|
|
7 |
p. 1105-1108
4 p.
|
artikel
|
| 167 |
Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics
|
Toledano-Luque, M.
|
|
2011
|
|
7 |
p. 1243-1246
4 p.
|
artikel
|
| 168 |
The influence of crystallinity on the resistive switching behavior of TiO2
|
Mähne, H.
|
|
2011
|
|
7 |
p. 1148-1151
4 p.
|
artikel
|
| 169 |
Thermal stability of Ni silicide films on heavily doped n+ and p+ Si substrates
|
Ahmet, Parhat
|
|
2008
|
|
7 |
p. 1642-1646
5 p.
|
artikel
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| 170 |
The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2
|
Lyons, J.L.
|
|
2011
|
|
7 |
p. 1452-1456
5 p.
|
artikel
|
| 171 |
The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
|
Zhang, P.F.
|
|
2011
|
|
7 |
p. 1054-1057
4 p.
|
artikel
|
| 172 |
Three-dimensional SU-8 sub-micrometer structuring by electron beam lithography
|
Koller, Daniel M.
|
|
2008
|
|
7 |
p. 1639-1641
3 p.
|
artikel
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| 173 |
Three-interface pseudo-MOSFET models for the characterization of SOI wafers with ultrathin film and BOX
|
Rodriguez, Noel
|
|
2011
|
|
7 |
p. 1236-1239
4 p.
|
artikel
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| 174 |
Towards barrier height modulation in HfO2/TiN by oxygen scavenging – Dielectric defects or metal induced gap states?
|
Pantisano, Luigi
|
|
2011
|
|
7 |
p. 1251-1254
4 p.
|
artikel
|
| 175 |
Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
|
Pampillón, M.A.
|
|
2011
|
|
7 |
p. 1357-1360
4 p.
|
artikel
|
| 176 |
Transferring of GaAs microtips using selective wet etching Al0.7Ga0.3As sacrificial layer
|
Sun, Xiaojuan
|
|
2008
|
|
7 |
p. 1481-1483
3 p.
|
artikel
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| 177 |
Transport and interface states in high-κ LaSiO x dielectric
|
Gomeniuk, Y.Y.
|
|
2011
|
|
7 |
p. 1342-1345
4 p.
|
artikel
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| 178 |
Ultra-dense silicon nanowires: A technology, transport and interfaces challenges insight (invited)
|
Ernst, T.
|
|
2011
|
|
7 |
p. 1198-1202
5 p.
|
artikel
|
| 179 |
Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)
|
Ragnarsson, L.-Å.
|
|
2011
|
|
7 |
p. 1317-1322
6 p.
|
artikel
|
| 180 |
Understanding reversal effects of metallic aluminum introduced in HfSiON/TiN PMOSFETs
|
Baudot, S.
|
|
2011
|
|
7 |
p. 1305-1308
4 p.
|
artikel
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