| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AC impedance analysis of Au/porous silicon contacts
|
Fonthal, F.
|
|
2006
|
|
11-12 |
p. 2381-2385
5 p.
|
artikel
|
| 2 |
A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics
|
Nemouchi, F.
|
|
2006
|
|
11-12 |
p. 2101-2106
6 p.
|
artikel
|
| 3 |
A global view of interconnects
|
List, Scott
|
|
2006
|
|
11-12 |
p. 2200-2207
8 p.
|
artikel
|
| 4 |
A maskless wet etching silicon dioxide post-CMOS process and its application
|
Dai, Ching-Liang
|
|
2006
|
|
11-12 |
p. 2543-2550
8 p.
|
artikel
|
| 5 |
A new RuO4 solvent solution for pure ruthenium film depositions
|
Gatineau, Julien
|
|
2006
|
|
11-12 |
p. 2248-2252
5 p.
|
artikel
|
| 6 |
Annealing effects on the properties of HfO2 films grown by metalorganic molecular beam epitaxy
|
Moon, Tae-Hyoung
|
|
2006
|
|
11-12 |
p. 2452-2457
6 p.
|
artikel
|
| 7 |
A novel approach to resistivity and interconnect modeling
|
Travaly, Y.
|
|
2006
|
|
11-12 |
p. 2417-2421
5 p.
|
artikel
|
| 8 |
A novel self-aligned process for platinum silicide nanowires
|
Zhang, Zhen
|
|
2006
|
|
11-12 |
p. 2107-2111
5 p.
|
artikel
|
| 9 |
Assembly and reliability of PBGA packages on FR-4 PCBs with SnAgCu solder
|
Arulvanan, P.
|
|
2006
|
|
11-12 |
p. 2462-2468
7 p.
|
artikel
|
| 10 |
Atomic layer deposited WN x C y films growth on SiC surfaces
|
Martin Hoyas, A.
|
|
2006
|
|
11-12 |
p. 2068-2071
4 p.
|
artikel
|
| 11 |
Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic polarization model
|
Bécu, S.
|
|
2006
|
|
11-12 |
p. 2422-2426
5 p.
|
artikel
|
| 12 |
Challenges in advanced metallization schemes
|
Brillouët, M.
|
|
2006
|
|
11-12 |
p. 2036-2041
6 p.
|
artikel
|
| 13 |
Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope
|
Gaillard, N.
|
|
2006
|
|
11-12 |
p. 2169-2174
6 p.
|
artikel
|
| 14 |
Characterization of post-copper CMP surface with scanning probe microscopy: Part II: Surface potential measurements with scanning Kelvin probe force microscopy
|
Dominget, A.
|
|
2006
|
|
11-12 |
p. 2355-2358
4 p.
|
artikel
|
| 15 |
Characterization of the impact of plasma treatments and wet cleaning on a porous low k material
|
Puyrenier, W.
|
|
2006
|
|
11-12 |
p. 2314-2318
5 p.
|
artikel
|
| 16 |
Chemical etching solutions for air gap formation using a sacrificial oxide/polymer approach
|
Gaillard, F.
|
|
2006
|
|
11-12 |
p. 2309-2313
5 p.
|
artikel
|
| 17 |
Chemical mechanical polishing of PZT thin films for FRAM applications
|
Seo, Yong-Jin
|
|
2006
|
|
11-12 |
p. 2238-2242
5 p.
|
artikel
|
| 18 |
Chip-to-chip interconnections based on the wireless capacitive coupling for 3D integration
|
Charlet, B.
|
|
2006
|
|
11-12 |
p. 2195-2199
5 p.
|
artikel
|
| 19 |
CMP characteristics and optical property of ITO thin film by using silica slurry with a variety of process parameters
|
Choi, Gwon-Woo
|
|
2006
|
|
11-12 |
p. 2213-2217
5 p.
|
artikel
|
| 20 |
Compatibility of Hf x Ta y N metal gate electrode with HfO x N y gate dielectric for advanced CMOS technology
|
Chang-Liao, Kuei-Shu
|
|
2006
|
|
11-12 |
p. 2516-2521
6 p.
|
artikel
|
| 21 |
Correlation between electromigration and Cu-contact angle after de-wetting
|
Vanypre, T.
|
|
2006
|
|
11-12 |
p. 2373-2376
4 p.
|
artikel
|
| 22 |
Correlation between trench depth and TDDB thermal activation energy in single damascene Cu/SiOC:H
|
Li, Y.-L.
|
|
2006
|
|
11-12 |
p. 2179-2183
5 p.
|
artikel
|
| 23 |
Crack initiation in Cu-interconnect structures
|
Brillet-Rouxel, H.
|
|
2006
|
|
11-12 |
p. 2297-2302
6 p.
|
artikel
|
| 24 |
Cu/barrier CMP on porous low-k based interconnect schemes
|
Gottfried, K.
|
|
2006
|
|
11-12 |
p. 2218-2224
7 p.
|
artikel
|
| 25 |
Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65nm technology node
|
Chhun, S.
|
|
2006
|
|
11-12 |
p. 2094-2100
7 p.
|
artikel
|
| 26 |
Decreasing step coverage of self-ionized plasma sputtered copper seed layer with target lifetime
|
Guerrieri, S.
|
|
2006
|
|
11-12 |
p. 2225-2228
4 p.
|
artikel
|
| 27 |
Density functional study of the stability and electronic properties of Ta x N y compounds used as copper diffusion barriers
|
Violet, P.
|
|
2006
|
|
11-12 |
p. 2077-2081
5 p.
|
artikel
|
| 28 |
Dependence of CMP-induced delamination on number of low-k dielectric films stacked
|
Leduc, Patrick
|
|
2006
|
|
11-12 |
p. 2072-2076
5 p.
|
artikel
|
| 29 |
Different approaches to integrate patterned buried CoSi2 layers in SOI substrates
|
Zimmermann, S.
|
|
2006
|
|
11-12 |
p. 2112-2116
5 p.
|
artikel
|
| 30 |
Editorial Board
|
|
|
2006
|
|
11-12 |
p. CO2-
1 p.
|
artikel
|
| 31 |
Effect of frictional force vector on delamination in Cu/low-k integration
|
Matsuo, Hisanori
|
|
2006
|
|
11-12 |
p. 2146-2149
4 p.
|
artikel
|
| 32 |
Effect of margin widths on the residual stress in a multi-layer ceramic capacitor
|
Park, Jong-Sung
|
|
2006
|
|
11-12 |
p. 2558-2563
6 p.
|
artikel
|
| 33 |
Effect of moisture adsorption on the properties of porous-silica ultralow-k films
|
Uchida, Y.
|
|
2006
|
|
11-12 |
p. 2126-2129
4 p.
|
artikel
|
| 34 |
Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films
|
Lavoie, C.
|
|
2006
|
|
11-12 |
p. 2042-2054
13 p.
|
artikel
|
| 35 |
Effects of bonding pressure on the thermo-mechanical reliability of ACF interconnection
|
Kim, Jong-Woong
|
|
2006
|
|
11-12 |
p. 2335-2340
6 p.
|
artikel
|
| 36 |
Effects of electromigration on microstructural evolution of eutectic SnPb flip chip solder bumps
|
Kim, Dae-Gon
|
|
2006
|
|
11-12 |
p. 2391-2395
5 p.
|
artikel
|
| 37 |
Electrical and dielectric properties of MIS Schottky diodes at low temperatures
|
Tataroğlu, A.
|
|
2006
|
|
11-12 |
p. 2551-2557
7 p.
|
artikel
|
| 38 |
Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology
|
Ťapajna, M.
|
|
2006
|
|
11-12 |
p. 2412-2416
5 p.
|
artikel
|
| 39 |
Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system
|
Nakatsuka, Osamu
|
|
2006
|
|
11-12 |
p. 2272-2276
5 p.
|
artikel
|
| 40 |
Electroless deposition of CoWP: Material characterization and process optimization on 300mm wafers
|
Decorps, T.
|
|
2006
|
|
11-12 |
p. 2082-2087
6 p.
|
artikel
|
| 41 |
Electron beam induced SiO2 etch selectivity and its application to oxide nano-aperture formation
|
Kim, D.W.
|
|
2006
|
|
11-12 |
p. 2493-2498
6 p.
|
artikel
|
| 42 |
Embedding electronic circuits by laser direct-write
|
Piqué, A.
|
|
2006
|
|
11-12 |
p. 2527-2533
7 p.
|
artikel
|
| 43 |
Evaluation of air gap structures produced by wet etch of sacrificial dielectrics: Extraction of k eff for different technology nodes and film permittivity
|
Schulze, K.
|
|
2006
|
|
11-12 |
p. 2324-2328
5 p.
|
artikel
|
| 44 |
Evidence for metastable defects in airgap interconnects
|
Guedj, C.
|
|
2006
|
|
11-12 |
p. 2386-2390
5 p.
|
artikel
|
| 45 |
Experimental measurements of electron scattering parameters in Cu narrow lines
|
Maîtrejean, S.
|
|
2006
|
|
11-12 |
p. 2396-2401
6 p.
|
artikel
|
| 46 |
Fabrication of PDMS (polydimethylsiloxane) microlens and diffuser using replica molding
|
Shih, Teng-Kai
|
|
2006
|
|
11-12 |
p. 2499-2503
5 p.
|
artikel
|
| 47 |
Fabrication of three-dimensional SiC-based ceramic micropatterns using a sequential micromolding-and-pyrolysis process
|
Lim, Tae Woo
|
|
2006
|
|
11-12 |
p. 2475-2481
7 p.
|
artikel
|
| 48 |
Frequency dependent capacitance and conductance–voltage characteristics of Al/Si3N4/p-Si(100) MIS diodes
|
Bülbül, M.M.
|
|
2006
|
|
11-12 |
p. 2522-2526
5 p.
|
artikel
|
| 49 |
Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures
|
Manke, C.
|
|
2006
|
|
11-12 |
p. 2277-2281
5 p.
|
artikel
|
| 50 |
High frequencies characterization of Cu-MIM capacitors in parallel configuration for advanced integrated circuits
|
Piquet, J.
|
|
2006
|
|
11-12 |
p. 2341-2345
5 p.
|
artikel
|
| 51 |
Impact of an As implant before CoSi2 formation on the sheet resistance and junction breakdown voltage
|
Erbetta, D.
|
|
2006
|
|
11-12 |
p. 2258-2263
6 p.
|
artikel
|
| 52 |
Impact of dummies on interconnects network HF propagation performances for the 65nm node
|
Blampey, B.
|
|
2006
|
|
11-12 |
p. 2292-2296
5 p.
|
artikel
|
| 53 |
Impact of narrow trench geometries on copper film crystallography
|
Brunoldi, G.
|
|
2006
|
|
11-12 |
p. 2208-2212
5 p.
|
artikel
|
| 54 |
Impact of TiN post-treatment on metal insulator metal capacitor performances
|
Bajolet, A.
|
|
2006
|
|
11-12 |
p. 2189-2194
6 p.
|
artikel
|
| 55 |
Improved electrical and reliability performance of 65nm interconnects with new barrier integration schemes
|
Delsol, R.
|
|
2006
|
|
11-12 |
p. 2377-2380
4 p.
|
artikel
|
| 56 |
Influence of mass density and mechanical properties on the surface acoustic wave velocity dispersion
|
Sekiguchi, A.
|
|
2006
|
|
11-12 |
p. 2368-2372
5 p.
|
artikel
|
| 57 |
In situ study of the growth kinetics and interfacial roughness during the first stages of nickel–silicide formation
|
Ehouarne, L.
|
|
2006
|
|
11-12 |
p. 2253-2257
5 p.
|
artikel
|
| 58 |
Integrating ENSEMBLE™ PMD low-k at the PMD level of CMOS logic circuits
|
Demuynck, S.
|
|
2006
|
|
11-12 |
p. 2303-2308
6 p.
|
artikel
|
| 59 |
Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects
|
Thomas, M.
|
|
2006
|
|
11-12 |
p. 2163-2168
6 p.
|
artikel
|
| 60 |
Interfacial reaction of ENIG/Sn-Ag-Cu/ENIG sandwich solder joint during isothermal aging
|
Yoon, Jeong-Won
|
|
2006
|
|
11-12 |
p. 2329-2334
6 p.
|
artikel
|
| 61 |
K value improvement of ULK dielectrics by wet activation
|
Cornec, Ch. Le
|
|
2006
|
|
11-12 |
p. 2122-2125
4 p.
|
artikel
|
| 62 |
Laser trimming of amorphous Ta42Si13N45 thin films with ultrashort pulses
|
Meier, Matthias
|
|
2006
|
|
11-12 |
p. 2234-2237
4 p.
|
artikel
|
| 63 |
Lateral crystallization of amorphous silicon by germanium seeding
|
Hakim, M.M.A.
|
|
2006
|
|
11-12 |
p. 2437-2440
4 p.
|
artikel
|
| 64 |
Low temperature plasma carbon nanotubes growth on patterned catalyst
|
Dubosc, M.
|
|
2006
|
|
11-12 |
p. 2427-2431
5 p.
|
artikel
|
| 65 |
Material and electrical characterization of TMS-based silicidation of the Cu-dielectric barrier interface for electromigration improvement of 65nm interconnects
|
Plantier, L.
|
|
2006
|
|
11-12 |
p. 2407-2411
5 p.
|
artikel
|
| 66 |
Measuring the Young’s modulus of ultralow-k materials with the non destructive picosecond ultrasonic method
|
Chapelon, L.L.
|
|
2006
|
|
11-12 |
p. 2346-2350
5 p.
|
artikel
|
| 67 |
Microcontacts with sub-30μm pitch for 3D chip-on-chip integration
|
Huebner, H.
|
|
2006
|
|
11-12 |
p. 2155-2162
8 p.
|
artikel
|
| 68 |
Microfabrication processes on cylindrical substrates – Part I: Material deposition and removal
|
Snow, Sean
|
|
2006
|
|
11-12 |
p. 2534-2542
9 p.
|
artikel
|
| 69 |
Microstructure and material properties of electroless CoWP films obtained from sulfamate solutions
|
Sverdlov, Y.
|
|
2006
|
|
11-12 |
p. 2243-2247
5 p.
|
artikel
|
| 70 |
Microstructuring of glassy carbon mold for glass embossing – Comparison of focused ion beam, nano/femtosecond-pulsed laser and mechanical machining
|
Youn, S.W.
|
|
2006
|
|
11-12 |
p. 2482-2492
11 p.
|
artikel
|
| 71 |
New techniques to characterize properties of advanced dielectric barriers for sub-65nm technology node
|
Vitiello, J.
|
|
2006
|
|
11-12 |
p. 2130-2135
6 p.
|
artikel
|
| 72 |
Novel dielectric capping layer approach for advanced copper interconnects using chemical grafting
|
Bispo, I.
|
|
2006
|
|
11-12 |
p. 2088-2093
6 p.
|
artikel
|
| 73 |
Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates
|
Kittl, J.A.
|
|
2006
|
|
11-12 |
p. 2117-2121
5 p.
|
artikel
|
| 74 |
Physical characterization by valence electron energy loss spectroscopy
|
Pokrant, S.
|
|
2006
|
|
11-12 |
p. 2364-2367
4 p.
|
artikel
|
| 75 |
Preface
|
Torres, J.
|
|
2006
|
|
11-12 |
p. 2033-2035
3 p.
|
artikel
|
| 76 |
Properties of 50nm electroless films Ag–W–oxygen before and after low temperature, low activation energy resistivity decay
|
Glickman, E.
|
|
2006
|
|
11-12 |
p. 2359-2363
5 p.
|
artikel
|
| 77 |
Quantification of processing damage in porous low dielectric constant films
|
Baklanov, Mikhail R.
|
|
2006
|
|
11-12 |
p. 2287-2291
5 p.
|
artikel
|
| 78 |
Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature: Role of agglomeration
|
Hoummada, K.
|
|
2006
|
|
11-12 |
p. 2264-2267
4 p.
|
artikel
|
| 79 |
Reduction of current instabilities in silicon nanogaps
|
Berg, Jonas
|
|
2006
|
|
11-12 |
p. 2469-2474
6 p.
|
artikel
|
| 80 |
Relevance of the pulsed capacitance–voltage measurement technique for the optimization of SrBi2Ta2O9/high-k stack combination to be used in FeFET devices
|
Xu, Z.
|
|
2006
|
|
11-12 |
p. 2564-2569
6 p.
|
artikel
|
| 81 |
Reliability issues in Cu/low-k structures regarding the initiation of stress-voiding or crack failure
|
Orain, S.
|
|
2006
|
|
11-12 |
p. 2402-2406
5 p.
|
artikel
|
| 82 |
Removal of etching/ashing residues and ashing/wet-clean damage in porous silica low-k films
|
Yamanishi, T.
|
|
2006
|
|
11-12 |
p. 2142-2145
4 p.
|
artikel
|
| 83 |
Selective deposition of CVD iron on silicon dioxide and tungsten
|
Low, Y.H.
|
|
2006
|
|
11-12 |
p. 2229-2233
5 p.
|
artikel
|
| 84 |
Selective etching of SiO2 over Si3N4 in a C5F8/O2/Ar plasma
|
Kim, Gwan-Ha
|
|
2006
|
|
11-12 |
p. 2504-2509
6 p.
|
artikel
|
| 85 |
Self-aligned metal capping layers for copper interconnects using electroless plating
|
Gambino, J.
|
|
2006
|
|
11-12 |
p. 2059-2067
9 p.
|
artikel
|
| 86 |
Self-aligned multi-level air gap integration
|
Hoofman, R.J.O.M.
|
|
2006
|
|
11-12 |
p. 2150-2154
5 p.
|
artikel
|
| 87 |
Stress evolution during intermittent deposition of metallic thin films
|
Gladyszewski, G.
|
|
2006
|
|
11-12 |
p. 2351-2354
4 p.
|
artikel
|
| 88 |
Study of silicide contacts to SiGe source/drain
|
Lauwers, A.
|
|
2006
|
|
11-12 |
p. 2268-2271
4 p.
|
artikel
|
| 89 |
Study of the post-etch cleaning compatibility with dense and porous ULK materials – characterization of the process impact
|
Rébiscoul, D.
|
|
2006
|
|
11-12 |
p. 2319-2323
5 p.
|
artikel
|
| 90 |
Study of void growth in 120nm copper lines by in situ SEM
|
Claret, N.
|
|
2006
|
|
11-12 |
p. 2175-2178
4 p.
|
artikel
|
| 91 |
Suppression of carbon depletion from carbon-doped low-k dielectric layers during fluorocarbon based plasma etching
|
Reid, I.
|
|
2006
|
|
11-12 |
p. 2458-2461
4 p.
|
artikel
|
| 92 |
Template synthesis of carbon nanotubes from porous alumina matrix on silicon
|
Gras, R.
|
|
2006
|
|
11-12 |
p. 2432-2436
5 p.
|
artikel
|
| 93 |
The effect of Ho doping on the microstructure and optical properties of Ba0.65Sr0.35TiO3 thin films
|
Zhang, Tianjin
|
|
2006
|
|
11-12 |
p. 2446-2451
6 p.
|
artikel
|
| 94 |
The parametric study of carbon nanotips grown by MWPECVD with controllable sharpness using various metallic catalysts
|
Chen, Chien-Chung
|
|
2006
|
|
11-12 |
p. 2510-2515
6 p.
|
artikel
|
| 95 |
The quest of porous ELK materials for high performance logic technologies
|
Hsia, Chin C.
|
|
2006
|
|
11-12 |
p. 2055-2058
4 p.
|
artikel
|
| 96 |
Tuning nickel silicide properties using a lamp based RTA, a heat conduction based RTA or a furnace anneal
|
Waidmann, S.
|
|
2006
|
|
11-12 |
p. 2282-2286
5 p.
|
artikel
|
| 97 |
UV curing effects on mechanical and electrical performances of a PECVD non-porogen porous SiOC:H films (in k [2.2–2.4] range) for 45nm node and below
|
Chapelon, L.L.
|
|
2006
|
|
11-12 |
p. 2136-2141
6 p.
|
artikel
|
| 98 |
Vertically aligned GaN nanotubes – Fabrication and current image analysis
|
Hung, Shang-Chao
|
|
2006
|
|
11-12 |
p. 2441-2445
5 p.
|
artikel
|
| 99 |
Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives
|
Lacrevaz, T.
|
|
2006
|
|
11-12 |
p. 2184-2188
5 p.
|
artikel
|
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