| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Active charge control in PIII—enlarging the process space
|
Kellerman, Peter L
|
|
2002
|
156 |
1-3 |
p. 77-82
6 p.
|
artikel
|
| 2 |
A new PBIID processing system supplying RF and HV pulses through a single feed-through
|
Nishimura, Yoshimi
|
|
2002
|
156 |
1-3 |
p. 50-53
4 p.
|
artikel
|
| 3 |
Author Index of Volume 156
|
|
|
2002
|
156 |
1-3 |
p. 343-344
2 p.
|
artikel
|
| 4 |
Blood compatibility and sp3/sp2 contents of diamond-like carbon (DLC) synthesized by plasma immersion ion implantation-deposition
|
Chen, J.Y
|
|
2002
|
156 |
1-3 |
p. 289-294
6 p.
|
artikel
|
| 5 |
Broad fast neutral molecule beam sources for industrial-scale beam-assisted deposition
|
Grigoriev, Sergei
|
|
2002
|
156 |
1-3 |
p. 44-49
6 p.
|
artikel
|
| 6 |
Characterisation of an industrial plasma immersion ion implantation reactor with a Langmuir probe and an energy-selective mass spectrometer
|
Kaeppelin, V
|
|
2002
|
156 |
1-3 |
p. 119-124
6 p.
|
artikel
|
| 7 |
Characterization of TiN coatings post-treated by metal-plasma ion implantation process
|
Wang, Da-Yung
|
|
2002
|
156 |
1-3 |
p. 201-207
7 p.
|
artikel
|
| 8 |
Conformal ion implantation
|
Adler, R.J
|
|
2002
|
156 |
1-3 |
p. 258-261
4 p.
|
artikel
|
| 9 |
Contamination issues in hydrogen plasma immersion ion implantation of silicon—a brief review
|
Chu, Paul K
|
|
2002
|
156 |
1-3 |
p. 244-252
9 p.
|
artikel
|
| 10 |
Controlling synthesis of Ti–O/Ti–N gradient films by PIII
|
Wen, F
|
|
2002
|
156 |
1-3 |
p. 208-213
6 p.
|
artikel
|
| 11 |
Deformation behavior of titanium nitride film prepared by plasma immersion ion implantation and deposition
|
Huang, N
|
|
2002
|
156 |
1-3 |
p. 170-175
6 p.
|
artikel
|
| 12 |
Deposition of diamond-like carbon films using plasma based ion implantation with bipolar pulses
|
Miyagawa, S
|
|
2002
|
156 |
1-3 |
p. 322-327
6 p.
|
artikel
|
| 13 |
Deposition of highly adhesive amorphous carbon films with the use of preliminary plasma-immersion ion implantation
|
Bugaev, S.P
|
|
2002
|
156 |
1-3 |
p. 311-316
6 p.
|
artikel
|
| 14 |
Dose- and energy-dependent behaviour of silicon nitride films produced by plasma immersion ion implantation
|
Rajkumar, R
|
|
2002
|
156 |
1-3 |
p. 272-275
4 p.
|
artikel
|
| 15 |
Dynamic MC simulation of DLC films synthesis by PBII
|
Miyagawa, Yoshiko
|
|
2002
|
156 |
1-3 |
p. 87-91
5 p.
|
artikel
|
| 16 |
Effective nitriding of steels outside low-pressure microwave discharges
|
Růžička, M
|
|
2002
|
156 |
1-3 |
p. 182-184
3 p.
|
artikel
|
| 17 |
Effect of damage production rate in aluminium surface treatment using an ECR–PBII apparatus
|
Bolduc, M
|
|
2002
|
156 |
1-3 |
p. 162-165
4 p.
|
artikel
|
| 18 |
Effect of nitrogen plasma-based ion implantation on joint prosthetic material
|
Ikeda, Daisaku
|
|
2002
|
156 |
1-3 |
p. 301-305
5 p.
|
artikel
|
| 19 |
Effects of nitrogen and argon plasma-immersion ion implantation on silicon and its oxidation
|
Rajkumer, R
|
|
2002
|
156 |
1-3 |
p. 253-257
5 p.
|
artikel
|
| 20 |
Formation of hydrogenated amorphous carbon films by plasma based ion implantation system applying RF and negative high voltage pulses through single feedthrough
|
Mokuno, Y
|
|
2002
|
156 |
1-3 |
p. 328-331
4 p.
|
artikel
|
| 21 |
From plasma immersion ion implantation to deposition: a historical perspective on principles and trends
|
Anders, André
|
|
2002
|
156 |
1-3 |
p. 3-12
10 p.
|
artikel
|
| 22 |
Generation of high voltage pulses for PBII devices
|
Günzel, R
|
|
2002
|
156 |
1-3 |
p. 54-60
7 p.
|
artikel
|
| 23 |
Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation
|
Volz, K
|
|
2002
|
156 |
1-3 |
p. 237-243
7 p.
|
artikel
|
| 24 |
High-flux, low-energy implantation effects on the composition of altered layers
|
Milcius, D.
|
|
2002
|
156 |
1-3 |
p. 214-218
5 p.
|
artikel
|
| 25 |
High temperature plasma based ionic implantation of titanium alloys and silicon
|
Marot, L
|
|
2002
|
156 |
1-3 |
p. 155-158
4 p.
|
artikel
|
| 26 |
Improving the biocompatibility of medical implants with plasma immersion ion implantation
|
Mändl, S
|
|
2002
|
156 |
1-3 |
p. 276-283
8 p.
|
artikel
|
| 27 |
Influence of gas flow rate and entry point on ion charge, ion counts and ion energy distribution in a filtered cathodic arc
|
Tarrant, R.N
|
|
2002
|
156 |
1-3 |
p. 110-114
5 p.
|
artikel
|
| 28 |
Influence of ion and neutral flux on the properties of diamond-like carbon from pulsed glow discharges of acetylene
|
Walter, Kevin C
|
|
2002
|
156 |
1-3 |
p. 306-310
5 p.
|
artikel
|
| 29 |
In situ process monitoring in plasma immersion ion implantation based on measurements of secondary electron emission coefficient
|
Nakamura, Keiji
|
|
2002
|
156 |
1-3 |
p. 83-86
4 p.
|
artikel
|
| 30 |
In situ stress measurements during low-energy nitriding of stainless steel
|
Sienz, S
|
|
2002
|
156 |
1-3 |
p. 185-189
5 p.
|
artikel
|
| 31 |
In vivo study of Ti–O thin film fabricated by PIII
|
Yang, P
|
|
2002
|
156 |
1-3 |
p. 284-288
5 p.
|
artikel
|
| 32 |
Ion density variation effects in plasma source ion implantation
|
Mukherjee, S
|
|
2002
|
156 |
1-3 |
p. 115-118
4 p.
|
artikel
|
| 33 |
Lateral texture evolution during formation of TiN by MePIIID
|
Huber, P
|
|
2002
|
156 |
1-3 |
p. 176-181
6 p.
|
artikel
|
| 34 |
Low- and high-energy plasma immersion ion implantation for modification of material surfaces
|
Mukherjee, S
|
|
2002
|
156 |
1-3 |
p. 103-109
7 p.
|
artikel
|
| 35 |
Mechanical and chemical properties of PBIID-treated plastics
|
Tonosaki, Minehiro
|
|
2002
|
156 |
1-3 |
p. 338-342
5 p.
|
artikel
|
| 36 |
Microstructure analyses of CrN coating synthesized by a hybrid PVD and metal-plasma ion implantation process
|
Wang, Da-Yung
|
|
2002
|
156 |
1-3 |
p. 195-200
6 p.
|
artikel
|
| 37 |
Microstructure of Al-alloy surface implanted with high-dose nitrogen
|
Hara, Yoshihito
|
|
2002
|
156 |
1-3 |
p. 166-169
4 p.
|
artikel
|
| 38 |
Microstructure of plasma nitrided layers on aluminium
|
Sonnleitner, Roman
|
|
2002
|
156 |
1-3 |
p. 149-154
6 p.
|
artikel
|
| 39 |
Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation
|
Ueda, M
|
|
2002
|
156 |
1-3 |
p. 190-194
5 p.
|
artikel
|
| 40 |
Nitriding of an austenitic stainless steel in plasma torch at atmospheric pressure
|
Pranevicius, L.L
|
|
2002
|
156 |
1-3 |
p. 219-224
6 p.
|
artikel
|
| 41 |
Nitrogen profiles in materials implanted via plasma-based ion implantation
|
Lacoste, A
|
|
2002
|
156 |
1-3 |
p. 125-130
6 p.
|
artikel
|
| 42 |
PBII deposition of thick carbon coatings from a cathodic arc plasma
|
Tarrant, R.N
|
|
2002
|
156 |
1-3 |
p. 143-148
6 p.
|
artikel
|
| 43 |
Plasma-based ion implantation of oxygen in stainless steel: influence of ion energy and dose
|
Lacoste, A
|
|
2002
|
156 |
1-3 |
p. 225-228
4 p.
|
artikel
|
| 44 |
Plasma-based ion implantation utilising a cathodic arc plasma
|
Bilek, M.M.M
|
|
2002
|
156 |
1-3 |
p. 136-142
7 p.
|
artikel
|
| 45 |
Plasma doping for the fabrication of ultra-shallow junctions
|
Felch, S.B
|
|
2002
|
156 |
1-3 |
p. 229-236
8 p.
|
artikel
|
| 46 |
Plasma immersion ion implantation based on glow discharge with electrostatic confinement of electrons
|
Metel, Alexander
|
|
2002
|
156 |
1-3 |
p. 38-43
6 p.
|
artikel
|
| 47 |
Plasma immersion ion implantation using polymeric substrates with a sacrificial conductive surface layer
|
Oates, T.W.H
|
|
2002
|
156 |
1-3 |
p. 332-337
6 p.
|
artikel
|
| 48 |
Preface
|
Pelletier, Jacques
|
|
2002
|
156 |
1-3 |
p. 1-2
2 p.
|
artikel
|
| 49 |
Processing considerations with plasma immersion ion implantation
|
Cheung, Nathan W
|
|
2002
|
156 |
1-3 |
p. 24-30
7 p.
|
artikel
|
| 50 |
Progress on high-voltage pulse generators, using low voltage semiconductors (<1 kV), designed for plasma immersion ion implantation (PIII)
|
Redondo, L.M
|
|
2002
|
156 |
1-3 |
p. 61-65
5 p.
|
artikel
|
| 51 |
Shunting arc plasma generation and ion extraction
|
Yukimura, Ken
|
|
2002
|
156 |
1-3 |
p. 31-37
7 p.
|
artikel
|
| 52 |
Simulation of sheath and presheath dynamics in PIII
|
Briehl, Boris
|
|
2002
|
156 |
1-3 |
p. 131-135
5 p.
|
artikel
|
| 53 |
Some fundamental problems in low-energy ion implantation
|
Terreault, B
|
|
2002
|
156 |
1-3 |
p. 13-23
11 p.
|
artikel
|
| 54 |
Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
|
Beloto, A.F
|
|
2002
|
156 |
1-3 |
p. 267-271
5 p.
|
artikel
|
| 55 |
Structure and properties of biomedical TiO2 films synthesized by dual plasma deposition
|
Leng, Y.X
|
|
2002
|
156 |
1-3 |
p. 295-300
6 p.
|
artikel
|
| 56 |
Subject Index of Volume 156
|
|
|
2002
|
156 |
1-3 |
p. 345-350
6 p.
|
artikel
|
| 57 |
Surface improvements of industrial components treated by plasma immersion ion implantation (PIII): results and prospects
|
Ueda, M
|
|
2002
|
156 |
1-3 |
p. 71-76
6 p.
|
artikel
|
| 58 |
Synthesis of amorphous carbon films by plasma-based ion implantation using ECR plasma with a mirror field
|
Watanabe, Toshiya
|
|
2002
|
156 |
1-3 |
p. 317-321
5 p.
|
artikel
|
| 59 |
The fabrication of advanced transistors with plasma doping
|
Lenoble, D
|
|
2002
|
156 |
1-3 |
p. 262-266
5 p.
|
artikel
|
| 60 |
The influence of ion implantation on the properties of titanium nitride layer deposited by magnetron sputtering
|
Ruset, C
|
|
2002
|
156 |
1-3 |
p. 159-161
3 p.
|
artikel
|
| 61 |
The multi-aperture hollow target: a method for determining ion incidence angles in plasma immersion ion implantation
|
Ensinger, W
|
|
2002
|
156 |
1-3 |
p. 92-96
5 p.
|
artikel
|
| 62 |
Two-dimensional particle-in-cell plasma immersion ion implantation simulation of gear/windmill geometry in cylindrical co-ordinates along the (r–θ) plane
|
Kwok, D.T.K
|
|
2002
|
156 |
1-3 |
p. 97-102
6 p.
|
artikel
|
| 63 |
Two switch high voltage modulator for plasma-based ion implantation
|
Yukimura, Ken
|
|
2002
|
156 |
1-3 |
p. 66-70
5 p.
|
artikel
|
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