| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amorphous carbon films prepared by photo-CVD from acetylene
|
Danno, M.
|
|
1986
|
4 |
5-7 |
p. 261-264
4 p.
|
artikel
|
| 2 |
A study of tin oxide film by vacuum evaporation
|
G.S. Chuah, Donald
|
|
1986
|
4 |
5-7 |
p. 274-278
5 p.
|
artikel
|
| 3 |
Corrosion behavior of rf-sputtered Ni45Cr55 film
|
Bhattacharya, R.S.
|
|
1986
|
4 |
5-7 |
p. 271-273
3 p.
|
artikel
|
| 4 |
Effect of baking on space-charge scattering in undoped n-type LPE GaAs
|
Huiying, Shi
|
|
1986
|
4 |
5-7 |
p. 290-293
4 p.
|
artikel
|
| 5 |
Effect of mechanical comminution on the intrinsic coercivity of Fe-Nd-B sintered magnets
|
Stadelmaier, H.H.
|
|
1986
|
4 |
5-7 |
p. 304-306
3 p.
|
artikel
|
| 6 |
Explosive crystallization in gallium-doped amorphous germanium
|
Wickersham Jr., C.E.
|
|
1986
|
4 |
5-7 |
p. 268-270
3 p.
|
artikel
|
| 7 |
Fine polishing of polycrystalline GaAs
|
Fournier, C.
|
|
1986
|
4 |
5-7 |
p. 294-297
4 p.
|
artikel
|
| 8 |
First crystallization of arsenic trisulfide from bulk glass: The synthesis of orpiment
|
Yang, C.Y.
|
|
1986
|
4 |
5-7 |
p. 233-235
3 p.
|
artikel
|
| 9 |
Glass-forming ability in binary alloys produced by ion beam mixing and by laser quenching
|
Alonso, J.A.
|
|
1986
|
4 |
5-7 |
p. 316-319
4 p.
|
artikel
|
| 10 |
Grain size dependence on layer thickness in composition modulated thin films
|
Jankowski, A.F.
|
|
1986
|
4 |
5-7 |
p. 313-315
3 p.
|
artikel
|
| 11 |
Growth of CdTe single crystals by THM (travelling heater method) and its repetition effect
|
Mochizuki, K.
|
|
1986
|
4 |
5-7 |
p. 298-300
3 p.
|
artikel
|
| 12 |
Identification of two bands in the PL spectra of SI LEC GaAs on the basis of a strain model
|
Zhongji, Zou
|
|
1986
|
4 |
5-7 |
p. 286-289
4 p.
|
artikel
|
| 13 |
I-V characteristics of CdTe single crystals
|
Mochizuki, K.
|
|
1986
|
4 |
5-7 |
p. 301-303
3 p.
|
artikel
|
| 14 |
Lpcvd of silicon oxide films in the temperature range 410 to 600°C from diacetoxyditertiarybutoxysilane
|
Smolinsky, Gerald
|
|
1986
|
4 |
5-7 |
p. 256-260
5 p.
|
artikel
|
| 15 |
Microstructure and properties of AlSi-Ti multilayer structure
|
Nahar, R.K.
|
|
1986
|
4 |
5-7 |
p. 265-267
3 p.
|
artikel
|
| 16 |
Some application-orientated properties of xerographic copper phthalocyanine-acrylate films
|
Y.C. Chan, Archie
|
|
1986
|
4 |
5-7 |
p. 239-243
5 p.
|
artikel
|
| 17 |
Spectrum of Nd(III):1,10-phenanthroline
|
Gopinath, Ch.
|
|
1986
|
4 |
5-7 |
p. 279-285
7 p.
|
artikel
|
| 18 |
Structural characterizations of MOCVD (GaAs)1−x (SiC2H) x films: Evidence for a multiphase structure
|
Maury, F.
|
|
1986
|
4 |
5-7 |
p. 249-255
7 p.
|
artikel
|
| 19 |
The application of harmonic analysis to the magnetic properties of high-tensile steels
|
Willcock, S.N.M.
|
|
1986
|
4 |
5-7 |
p. 307-312
6 p.
|
artikel
|
| 20 |
The dielectric constants of a-Si,Ge:H,F alloys
|
Kalema, V.N.
|
|
1986
|
4 |
5-7 |
p. 320-322
3 p.
|
artikel
|
| 21 |
The “effective” penetration depth of backscattered electrons associated with electron channeling patterns (ECPs)
|
Kaczorowski, Mieczyslaw
|
|
1986
|
4 |
5-7 |
p. 244-248
5 p.
|
artikel
|
| 22 |
Transition temperature of BaEu2Mn2O7
|
Kamegashira, Naoki
|
|
1986
|
4 |
5-7 |
p. 236-238
3 p.
|
artikel
|
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