| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Chemical formula of phase X in the system PbO-SiO2
|
Yamaguchi, Osamu
|
|
1985
|
3 |
11 |
p. 429-431
3 p.
|
artikel
|
| 2 |
CoGaInS4: A new layered compound
|
Razzetti, C.
|
|
1985
|
3 |
11 |
p. 449-452
4 p.
|
artikel
|
| 3 |
Grain boundary resistance in p- and n-type indium phosphide
|
Shieh, C.-L.
|
|
1985
|
3 |
11 |
p. 415-418
4 p.
|
artikel
|
| 4 |
Growth of AgGaSe2 thin films
|
Patel, S.M.
|
|
1985
|
3 |
11 |
p. 440-445
6 p.
|
artikel
|
| 5 |
MRS news
|
|
|
1985
|
3 |
11 |
p. I-IV
nvt p.
|
artikel
|
| 6 |
Novel multianion MgSiAlOC oxycarbide glasses
|
Homeny, Joseph
|
|
1985
|
3 |
11 |
p. 432-434
3 p.
|
artikel
|
| 7 |
On the growth of ZnSe on (100) GaAs by atmospheric pressure movpe
|
Fan, Guanghan
|
|
1985
|
3 |
11 |
p. 453-456
4 p.
|
artikel
|
| 8 |
On the location of the misfit dislocations in InGaAs/InP mbe single heterostructures
|
Franzosi, P.
|
|
1985
|
3 |
11 |
p. 425-428
4 p.
|
artikel
|
| 9 |
Oxygen-related SiH IR stretching bands in Fz-Si grown in a hydrogen atmosphere
|
Qi, M.W.
|
|
1985
|
3 |
11 |
p. 467-470
4 p.
|
artikel
|
| 10 |
Positron annihilation study of boron-doped Ni3Al
|
Dasgupta, A.
|
|
1985
|
3 |
11 |
p. 457-461
5 p.
|
artikel
|
| 11 |
Preparation of CdTe films by electrodeposition
|
Shih, I.
|
|
1985
|
3 |
11 |
p. 446-448
3 p.
|
artikel
|
| 12 |
Preparation of polycrystalline films of NbO2 BY rf sputtering
|
Snook, M.W.G.
|
|
1985
|
3 |
11 |
p. 462-466
5 p.
|
artikel
|
| 13 |
Studies on the origin of subgrain boundaries in cast polycrystalline silicon using ebic and X-ray topography
|
Johnson, S.M.
|
|
1985
|
3 |
11 |
p. 419-424
6 p.
|
artikel
|
| 14 |
Use of chemically pre-mixed oxide batches for oxynitride glass synthesis
|
Tredway, William K.
|
|
1985
|
3 |
11 |
p. 435-439
5 p.
|
artikel
|
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