| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amorphous CuZr foils
|
Felder, R.J.
|
|
1984
|
2 |
3 |
p. 232-233
2 p.
|
artikel
|
| 2 |
A new technique for preparation of molybdenum single crystal with an optional shape
|
Fujii, T.
|
|
1984
|
2 |
3 |
p. 226-229
4 p.
|
artikel
|
| 3 |
Crystal chemistry and ionic conductivity in Nasicon-type phases Na1+x Zr2−xYbx(AsO4)3 with 0 ⩽ x ⩽ 0.45
|
Zahir, M.
|
|
1984
|
2 |
3 |
p. 234-236
3 p.
|
artikel
|
| 4 |
Diphasic ceramic composites via a sol-gel method
|
Hoffman, David
|
|
1984
|
2 |
3 |
p. 245-247
3 p.
|
artikel
|
| 5 |
Growth of crystalline bismuth trisulphide films
|
Moorthy, P.A.Krishna
|
|
1984
|
2 |
3 |
p. 223-225
3 p.
|
artikel
|
| 6 |
High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductors
|
Narayan, J.
|
|
1984
|
2 |
3 |
p. 211-218
8 p.
|
artikel
|
| 7 |
Interface structure and solute trapping in rapid crystal growth of silicon and germanium from the laser-induced melt
|
Chikawa, Jun-ichi
|
|
1984
|
2 |
3 |
p. 202-208
7 p.
|
artikel
|
| 8 |
Intergranular attack during crevice corrosion of stainless steels
|
Dayal, R.K.
|
|
1984
|
2 |
3 |
p. 248-252
5 p.
|
artikel
|
| 9 |
Limiting oxygen partial pressure of LaMnO3 phase
|
Kamegashira, Naoki
|
|
1984
|
2 |
3 |
p. 194-195
2 p.
|
artikel
|
| 10 |
MRS newsletter
|
|
|
1984
|
2 |
3 |
p. I-IV
nvt p.
|
artikel
|
| 11 |
Nature of unseeded crystallization in semiconductors
|
Narayan, J.
|
|
1984
|
2 |
3 |
p. 219-222
4 p.
|
artikel
|
| 12 |
New modification of PbGeO3
|
Yamaguchi, O.
|
|
1984
|
2 |
3 |
p. 242-244
3 p.
|
artikel
|
| 13 |
Observation of phase separation in (Ge2) x (GaAs)1−x alloys grown by molecular beam epitaxy
|
Banerjee, Indrajit
|
|
1984
|
2 |
3 |
p. 189-193
5 p.
|
artikel
|
| 14 |
On the thermal donors in silicon
|
Corbett, James W.
|
|
1984
|
2 |
3 |
p. 209-210
2 p.
|
artikel
|
| 15 |
Photoluminescence changes under high-intensity excitation of A12O3-coated GaAs and their relevance to evaluation of facet coating procedures
|
Swaminathan, V.
|
|
1984
|
2 |
3 |
p. 179-183
5 p.
|
artikel
|
| 16 |
P M flake material prepared by mechanical chopping of rapidly quenched metallic ribbon
|
Whang, S.H.
|
|
1984
|
2 |
3 |
p. 230-231
2 p.
|
artikel
|
| 17 |
Post-deposition annealing of sputtered zinc-oxide thin films
|
Bertolotti, M.
|
|
1984
|
2 |
3 |
p. 237-241
5 p.
|
artikel
|
| 18 |
The effect of oxygen partial pressure on the properties of RF-sputtered Al2O3 thin films
|
Chen, Ga-Lane
|
|
1984
|
2 |
3 |
p. 196-201
6 p.
|
artikel
|
| 19 |
The origin of dark spot defects in InP InGaAsP aged light emitting diodes
|
Mahajan, S.
|
|
1984
|
2 |
3 |
p. 184-188
5 p.
|
artikel
|
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