nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Amorphous carbon films prepared by photo-CVD from acetylene
|
Danno, M. |
|
1986 |
1-10 |
5-7 |
p. 261-264 4 p. |
artikel |
2 |
A study of tin oxide film by vacuum evaporation
|
G.S. Chuah, Donald |
|
1986 |
1-10 |
5-7 |
p. 274-278 5 p. |
artikel |
3 |
Chemical degradations of pyrogenic polytitanosiloxane coatings
|
Sugama, T. |
|
1991 |
1-10 |
5-7 |
p. 187-192 6 p. |
artikel |
4 |
Climb of extended dislocations in silicon caused by oxygen precipitation
|
Minowa, Kyoko |
|
1991 |
1-10 |
5-7 |
p. 164-170 7 p. |
artikel |
5 |
Control of phase formation of AlPO4 with titania
|
Debnath, Radhaballabh |
|
1991 |
1-10 |
5-7 |
p. 193-194 2 p. |
artikel |
6 |
Corrosion behavior of rf-sputtered Ni45Cr55 film
|
Bhattacharya, R.S. |
|
1986 |
1-10 |
5-7 |
p. 271-273 3 p. |
artikel |
7 |
Dislocations in GaAs grown by ALMBE on (001) Si
|
Vilà, A. |
|
1991 |
1-10 |
5-7 |
p. 155-160 6 p. |
artikel |
8 |
Effect of baking on space-charge scattering in undoped n-type LPE GaAs
|
Huiying, Shi |
|
1986 |
1-10 |
5-7 |
p. 290-293 4 p. |
artikel |
9 |
Effect of mechanical comminution on the intrinsic coercivity of Fe-Nd-B sintered magnets
|
Stadelmaier, H.H. |
|
1986 |
1-10 |
5-7 |
p. 304-306 3 p. |
artikel |
10 |
Effects of heat treatment on a MgO Si structure: a possible buffer layer structure for high-T c superconductors
|
Shih, I. |
|
1991 |
1-10 |
5-7 |
p. 161-163 3 p. |
artikel |
11 |
Elastic twins in YBa2Cu3O7 crystals
|
Boiko, Y. |
|
1991 |
1-10 |
5-7 |
p. 207-211 5 p. |
artikel |
12 |
Excimer laser-induced etching of non-hydrogenated (a-C) and hydrogenated (a-C:H) diamond-like carbon films: a comparative study
|
Malshe, A.P. |
|
1991 |
1-10 |
5-7 |
p. 175-179 5 p. |
artikel |
13 |
Explosive crystallization in gallium-doped amorphous germanium
|
Wickersham Jr., C.E. |
|
1986 |
1-10 |
5-7 |
p. 268-270 3 p. |
artikel |
14 |
Fine polishing of polycrystalline GaAs
|
Fournier, C. |
|
1986 |
1-10 |
5-7 |
p. 294-297 4 p. |
artikel |
15 |
First crystallization of arsenic trisulfide from bulk glass: The synthesis of orpiment
|
Yang, C.Y. |
|
1986 |
1-10 |
5-7 |
p. 233-235 3 p. |
artikel |
16 |
Glass-forming ability in binary alloys produced by ion beam mixing and by laser quenching
|
Alonso, J.A. |
|
1986 |
1-10 |
5-7 |
p. 316-319 4 p. |
artikel |
17 |
Grain size dependence on layer thickness in composition modulated thin films
|
Jankowski, A.F. |
|
1986 |
1-10 |
5-7 |
p. 313-315 3 p. |
artikel |
18 |
Growth of BiCaSrCu-oxide superconducting film on NdGaO3 substrates
|
Narayanan, S. |
|
1991 |
1-10 |
5-7 |
p. 212-216 5 p. |
artikel |
19 |
Growth of CdTe single crystals by THM (travelling heater method) and its repetition effect
|
Mochizuki, K. |
|
1986 |
1-10 |
5-7 |
p. 298-300 3 p. |
artikel |
20 |
Hopping conduction in sputtered Ni-Co-Mn-O spinel films
|
Baliga, S. |
|
1991 |
1-10 |
5-7 |
p. 226-228 3 p. |
artikel |
21 |
Identification of two bands in the PL spectra of SI LEC GaAs on the basis of a strain model
|
Zhongji, Zou |
|
1986 |
1-10 |
5-7 |
p. 286-289 4 p. |
artikel |
22 |
Interface characterization of (In,Ga)As/AlGaAs layers grown by metalorganic chemical vapor deposition
|
Kim, J. |
|
1991 |
1-10 |
5-7 |
p. 151-154 4 p. |
artikel |
23 |
Internal friction in iron-oxygen system
|
Kulkarni, A.V. |
|
1991 |
1-10 |
5-7 |
p. 171-174 4 p. |
artikel |
24 |
I-V characteristics of CdTe single crystals
|
Mochizuki, K. |
|
1986 |
1-10 |
5-7 |
p. 301-303 3 p. |
artikel |
25 |
Lpcvd of silicon oxide films in the temperature range 410 to 600°C from diacetoxyditertiarybutoxysilane
|
Smolinsky, Gerald |
|
1986 |
1-10 |
5-7 |
p. 256-260 5 p. |
artikel |
26 |
Microstructure and properties of AlSi-Ti multilayer structure
|
Nahar, R.K. |
|
1986 |
1-10 |
5-7 |
p. 265-267 3 p. |
artikel |
27 |
Morphotropic phase boundaries in the ternary system of Pb(Mg 1 3 Nb 2 3 )O3-La(Mg 2 3 Nb 1 3 )O3-PbTiO3
|
Li-Jiaun, Lin |
|
1991 |
1-10 |
5-7 |
p. 222-225 4 p. |
artikel |
28 |
New layered cuprates with the 2-2-2-2 structure: Bi2Sr2(RE1−x Th x)2Cu2O10 (RE = Pr, Nd, Sm, Eu, Gd, Tb, Dy, and Ho)
|
Schilling, A. |
|
1991 |
1-10 |
5-7 |
p. 217-221 5 p. |
artikel |
29 |
15N MAS NMR in the YSiAlON system
|
Kruppa, D. |
|
1991 |
1-10 |
5-7 |
p. 195-198 4 p. |
artikel |
30 |
On the preparation of PZT thin films by laser ablation deposition
|
Watts, B.E. |
|
1991 |
1-10 |
5-7 |
p. 183-186 4 p. |
artikel |
31 |
Some application-orientated properties of xerographic copper phthalocyanine-acrylate films
|
Y.C. Chan, Archie |
|
1986 |
1-10 |
5-7 |
p. 239-243 5 p. |
artikel |
32 |
Spectrum of Nd(III):1,10-phenanthroline
|
Gopinath, Ch. |
|
1986 |
1-10 |
5-7 |
p. 279-285 7 p. |
artikel |
33 |
Structural characterizations of MOCVD (GaAs)1−x (SiC2H) x films: Evidence for a multiphase structure
|
Maury, F. |
|
1986 |
1-10 |
5-7 |
p. 249-255 7 p. |
artikel |
34 |
Studies of some photoluminescence properties of a-Si:H films
|
Wang, W.L. |
|
1991 |
1-10 |
5-7 |
p. 180-182 3 p. |
artikel |
35 |
Synthesis of YBa2Cu4O8 in air through complex precursor formation and fine-particle techniques
|
Palkar, V.R. |
|
1991 |
1-10 |
5-7 |
p. 199-206 8 p. |
artikel |
36 |
The application of harmonic analysis to the magnetic properties of high-tensile steels
|
Willcock, S.N.M. |
|
1986 |
1-10 |
5-7 |
p. 307-312 6 p. |
artikel |
37 |
The dielectric constants of a-Si,Ge:H,F alloys
|
Kalema, V.N. |
|
1986 |
1-10 |
5-7 |
p. 320-322 3 p. |
artikel |
38 |
The “effective” penetration depth of backscattered electrons associated with electron channeling patterns (ECPs)
|
Kaczorowski, Mieczyslaw |
|
1986 |
1-10 |
5-7 |
p. 244-248 5 p. |
artikel |
39 |
Transition temperature of BaEu2Mn2O7
|
Kamegashira, Naoki |
|
1986 |
1-10 |
5-7 |
p. 236-238 3 p. |
artikel |