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                             39 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Amorphous carbon films prepared by photo-CVD from acetylene Danno, M.
1986
1-10 5-7 p. 261-264
4 p.
artikel
2 A study of tin oxide film by vacuum evaporation G.S. Chuah, Donald
1986
1-10 5-7 p. 274-278
5 p.
artikel
3 Chemical degradations of pyrogenic polytitanosiloxane coatings Sugama, T.
1991
1-10 5-7 p. 187-192
6 p.
artikel
4 Climb of extended dislocations in silicon caused by oxygen precipitation Minowa, Kyoko
1991
1-10 5-7 p. 164-170
7 p.
artikel
5 Control of phase formation of AlPO4 with titania Debnath, Radhaballabh
1991
1-10 5-7 p. 193-194
2 p.
artikel
6 Corrosion behavior of rf-sputtered Ni45Cr55 film Bhattacharya, R.S.
1986
1-10 5-7 p. 271-273
3 p.
artikel
7 Dislocations in GaAs grown by ALMBE on (001) Si Vilà, A.
1991
1-10 5-7 p. 155-160
6 p.
artikel
8 Effect of baking on space-charge scattering in undoped n-type LPE GaAs Huiying, Shi
1986
1-10 5-7 p. 290-293
4 p.
artikel
9 Effect of mechanical comminution on the intrinsic coercivity of Fe-Nd-B sintered magnets Stadelmaier, H.H.
1986
1-10 5-7 p. 304-306
3 p.
artikel
10 Effects of heat treatment on a MgO Si structure: a possible buffer layer structure for high-T c superconductors Shih, I.
1991
1-10 5-7 p. 161-163
3 p.
artikel
11 Elastic twins in YBa2Cu3O7 crystals Boiko, Y.
1991
1-10 5-7 p. 207-211
5 p.
artikel
12 Excimer laser-induced etching of non-hydrogenated (a-C) and hydrogenated (a-C:H) diamond-like carbon films: a comparative study Malshe, A.P.
1991
1-10 5-7 p. 175-179
5 p.
artikel
13 Explosive crystallization in gallium-doped amorphous germanium Wickersham Jr., C.E.
1986
1-10 5-7 p. 268-270
3 p.
artikel
14 Fine polishing of polycrystalline GaAs Fournier, C.
1986
1-10 5-7 p. 294-297
4 p.
artikel
15 First crystallization of arsenic trisulfide from bulk glass: The synthesis of orpiment Yang, C.Y.
1986
1-10 5-7 p. 233-235
3 p.
artikel
16 Glass-forming ability in binary alloys produced by ion beam mixing and by laser quenching Alonso, J.A.
1986
1-10 5-7 p. 316-319
4 p.
artikel
17 Grain size dependence on layer thickness in composition modulated thin films Jankowski, A.F.
1986
1-10 5-7 p. 313-315
3 p.
artikel
18 Growth of BiCaSrCu-oxide superconducting film on NdGaO3 substrates Narayanan, S.
1991
1-10 5-7 p. 212-216
5 p.
artikel
19 Growth of CdTe single crystals by THM (travelling heater method) and its repetition effect Mochizuki, K.
1986
1-10 5-7 p. 298-300
3 p.
artikel
20 Hopping conduction in sputtered Ni-Co-Mn-O spinel films Baliga, S.
1991
1-10 5-7 p. 226-228
3 p.
artikel
21 Identification of two bands in the PL spectra of SI LEC GaAs on the basis of a strain model Zhongji, Zou
1986
1-10 5-7 p. 286-289
4 p.
artikel
22 Interface characterization of (In,Ga)As/AlGaAs layers grown by metalorganic chemical vapor deposition Kim, J.
1991
1-10 5-7 p. 151-154
4 p.
artikel
23 Internal friction in iron-oxygen system Kulkarni, A.V.
1991
1-10 5-7 p. 171-174
4 p.
artikel
24 I-V characteristics of CdTe single crystals Mochizuki, K.
1986
1-10 5-7 p. 301-303
3 p.
artikel
25 Lpcvd of silicon oxide films in the temperature range 410 to 600°C from diacetoxyditertiarybutoxysilane Smolinsky, Gerald
1986
1-10 5-7 p. 256-260
5 p.
artikel
26 Microstructure and properties of AlSi-Ti multilayer structure Nahar, R.K.
1986
1-10 5-7 p. 265-267
3 p.
artikel
27 Morphotropic phase boundaries in the ternary system of Pb(Mg 1 3 Nb 2 3 )O3-La(Mg 2 3 Nb 1 3 )O3-PbTiO3 Li-Jiaun, Lin
1991
1-10 5-7 p. 222-225
4 p.
artikel
28 New layered cuprates with the 2-2-2-2 structure: Bi2Sr2(RE1−x Th x)2Cu2O10 (RE = Pr, Nd, Sm, Eu, Gd, Tb, Dy, and Ho) Schilling, A.
1991
1-10 5-7 p. 217-221
5 p.
artikel
29 15N MAS NMR in the YSiAlON system Kruppa, D.
1991
1-10 5-7 p. 195-198
4 p.
artikel
30 On the preparation of PZT thin films by laser ablation deposition Watts, B.E.
1991
1-10 5-7 p. 183-186
4 p.
artikel
31 Some application-orientated properties of xerographic copper phthalocyanine-acrylate films Y.C. Chan, Archie
1986
1-10 5-7 p. 239-243
5 p.
artikel
32 Spectrum of Nd(III):1,10-phenanthroline Gopinath, Ch.
1986
1-10 5-7 p. 279-285
7 p.
artikel
33 Structural characterizations of MOCVD (GaAs)1−x (SiC2H) x films: Evidence for a multiphase structure Maury, F.
1986
1-10 5-7 p. 249-255
7 p.
artikel
34 Studies of some photoluminescence properties of a-Si:H films Wang, W.L.
1991
1-10 5-7 p. 180-182
3 p.
artikel
35 Synthesis of YBa2Cu4O8 in air through complex precursor formation and fine-particle techniques Palkar, V.R.
1991
1-10 5-7 p. 199-206
8 p.
artikel
36 The application of harmonic analysis to the magnetic properties of high-tensile steels Willcock, S.N.M.
1986
1-10 5-7 p. 307-312
6 p.
artikel
37 The dielectric constants of a-Si,Ge:H,F alloys Kalema, V.N.
1986
1-10 5-7 p. 320-322
3 p.
artikel
38 The “effective” penetration depth of backscattered electrons associated with electron channeling patterns (ECPs) Kaczorowski, Mieczyslaw
1986
1-10 5-7 p. 244-248
5 p.
artikel
39 Transition temperature of BaEu2Mn2O7 Kamegashira, Naoki
1986
1-10 5-7 p. 236-238
3 p.
artikel
                             39 gevonden resultaten
 
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