nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Annealing behaviour of vapour-deposited AlRh thin films
|
Chaudhury, Zariff A. |
|
1982 |
98 |
3 |
p. 233-239 7 p. |
artikel |
2 |
Crystallization of amorphous antimony films deposited onto glass substrates in ultrahigh vacuum
|
Hashimoto, Mituru |
|
1982 |
98 |
3 |
p. 197-201 5 p. |
artikel |
3 |
Crystallization of substrate-confined liquid indium
|
Ueda, Masaaki |
|
1982 |
98 |
3 |
p. 241-247 7 p. |
artikel |
4 |
Electron microscopy investigation of structure and morphology of small supported metal particles of palladium
|
Robinson, F. |
|
1982 |
98 |
3 |
p. 179-196 18 p. |
artikel |
5 |
Growth of tellurium films evaporated on NaCl, KBr and KCl substrates
|
Okuyama, K. |
|
1982 |
98 |
3 |
p. 203-210 8 p. |
artikel |
6 |
Microdiffraction patterns of icosahedral particles
|
Gómez, A. |
|
1982 |
98 |
3 |
p. L95-L97 nvt p. |
artikel |
7 |
Modified flash evaporation technique for the preparation of thin amorphous semiconductor films
|
Kahnt, Hanno |
|
1982 |
98 |
3 |
p. 211-214 4 p. |
artikel |
8 |
Réalisation et études des couches minces évaporées de SnSe2
|
Tran Quan, Dang |
|
1982 |
98 |
3 |
p. 165-177 13 p. |
artikel |
9 |
The fabrication of both n-type and p-type GaAs thin films deposited by troide sputtering
|
Mosher, D.M. |
|
1982 |
98 |
3 |
p. 215-228 14 p. |
artikel |
10 |
The formation of SiO2 films on silicon by high dose oxygen ion implantation
|
Kreissig, U. |
|
1982 |
98 |
3 |
p. 229-232 4 p. |
artikel |