| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate determination of optical constants of absorbing materials: measurements of transmittance and reflectance of thin films on partially metallized substrates
|
Hjortsberg, A.
|
|
1980
|
69 |
2 |
p. L15-L17
nvt p.
|
artikel
|
| 2 |
Comment on the activation energy of manganese and Mn-SiO thin films
|
Castro, E.M.
|
|
1980
|
69 |
2 |
p. L21-L23
nvt p.
|
artikel
|
| 3 |
Conference announcements
|
|
|
1980
|
69 |
2 |
p. L29-L30
nvt p.
|
artikel
|
| 4 |
Electrical properties of electrochemically prepared thin polyphenylene oxide films on a platinum surface: The role of ionic impurities in electroforming and conduction
|
Dubois, J.E.
|
|
1980
|
69 |
2 |
p. 141-148
8 p.
|
artikel
|
| 5 |
Hall coefficient of thin polycrystalline metallic films in a three-dimensional scattering model
|
Pichard, C.R.
|
|
1980
|
69 |
2 |
p. 157-164
8 p.
|
artikel
|
| 6 |
Image contrast produced by three-dimensional epitaxial crystallites of nickel electrodeposits grown on (001) copper substrates
|
Nakahara, S.
|
|
1980
|
69 |
2 |
p. 241-251
11 p.
|
artikel
|
| 7 |
Mechanisms of reactive sputtering of indium I: Growth of InN in mixed Ar-N2 discharges
|
Natarajan, B.R.
|
|
1980
|
69 |
2 |
p. 201-216
16 p.
|
artikel
|
| 8 |
Mechanisms of reactive sputtering of indium II: Growth of indium oxynitride in mixed N2-O2 discharges
|
Natarajan, B.R.
|
|
1980
|
69 |
2 |
p. 217-227
11 p.
|
artikel
|
| 9 |
Mechanisms of reactive sputtering of indium III: A general phenomenological model for reactive sputtering
|
Eltoukhy, A.H.
|
|
1980
|
69 |
2 |
p. 229-235
7 p.
|
artikel
|
| 10 |
Memory switching in amorphous Ge-S-Ga thin films
|
Mycielski, W.
|
|
1980
|
69 |
2 |
p. L9-L10
nvt p.
|
artikel
|
| 11 |
n-CdS/p-ZnIn2Se4 thin film solar cell
|
García, F.J.
|
|
1980
|
69 |
2 |
p. 137-139
3 p.
|
artikel
|
| 12 |
Prediction of the composition of a multicomponent surface phase by means of adsorption data of singles gases
|
Jaroniec, M.
|
|
1980
|
69 |
2 |
p. L25-L27
nvt p.
|
artikel
|
| 13 |
Preparation of amorphous CuInSe2 thin films
|
Durný, R.
|
|
1980
|
69 |
2 |
p. L11-L13
nvt p.
|
artikel
|
| 14 |
Properties of silicon nitride thin films obtained by reactive sputtering
|
Posadowski, Witold
|
|
1980
|
69 |
2 |
p. 149-155
7 p.
|
artikel
|
| 15 |
Quantitative relations between the orientation axis tilt, the angle of incidence of the vapour and the surface form in vacuum-condensed films
|
Boichot, S.J.
|
|
1980
|
69 |
2 |
p. 191-199
9 p.
|
artikel
|
| 16 |
Relations between transport phenomena and crystallization of selenium films
|
Larmagnac, J.P.
|
|
1980
|
69 |
2 |
p. 237-240
4 p.
|
artikel
|
| 17 |
Resistivity and structure of evaporated polycrystalline molybdenum films
|
Vávra, I.
|
|
1980
|
69 |
2 |
p. 169-173
5 p.
|
artikel
|
| 18 |
Sprayed SnO2 films: Growth mechanism and film structure characterization
|
Sanz Maudes, J.
|
|
1980
|
69 |
2 |
p. 183-189
7 p.
|
artikel
|
| 19 |
Surface and bulk photoconductivity of CdS(Cu, Cl) thin films
|
Porada, Z.
|
|
1980
|
69 |
2 |
p. 165-168
4 p.
|
artikel
|
| 20 |
The film thickness dependence of the space charge capacitance in PbS-Si heterojunctions
|
Rahnamai, H.
|
|
1980
|
69 |
2 |
p. L19-L20
nvt p.
|
artikel
|
| 21 |
Thermal strain in lead thin films VI: Effects of oxygen doping
|
Murakami, Masanori
|
|
1980
|
69 |
2 |
p. 253-267
15 p.
|
artikel
|
| 22 |
X-ray photoemission studies of cesium antimonide photoemitters
|
Bates Jr., Clayton W.
|
|
1980
|
69 |
2 |
p. 175-182
8 p.
|
artikel
|
Tijdschrift beschrijving