| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amorphization, recrystallization and end of range defects in germanium
|
Claverie, A.
|
|
2010
|
518 |
9 |
p. 2307-2313
7 p.
|
artikel
|
| 2 |
Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate
|
Duguay, S.
|
|
2010
|
518 |
9 |
p. 2398-2401
4 p.
|
artikel
|
| 3 |
Atomic-scale study of the role of carbon on boron clustering
|
Philippe, T.
|
|
2010
|
518 |
9 |
p. 2406-2408
3 p.
|
artikel
|
| 4 |
Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures
|
Castrillo, P.
|
|
2010
|
518 |
9 |
p. 2448-2453
6 p.
|
artikel
|
| 5 |
Author Index
|
|
|
2010
|
518 |
9 |
p. 2576-2577
2 p.
|
artikel
|
| 6 |
Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography
|
Ngamo, M.
|
|
2010
|
518 |
9 |
p. 2402-2405
4 p.
|
artikel
|
| 7 |
Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures
|
Wolfsteller, A.
|
|
2010
|
518 |
9 |
p. 2555-2561
7 p.
|
artikel
|
| 8 |
Correlated out-diffusion of nitrogen and in-diffusion of self-interstitials resulting in elimination of nitrogen-related deep centres
|
Voronkov, V.V.
|
|
2010
|
518 |
9 |
p. 2346-2349
4 p.
|
artikel
|
| 9 |
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
|
Johnson, B.C.
|
|
2010
|
518 |
9 |
p. 2524-2527
4 p.
|
artikel
|
| 10 |
Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions
|
Yang, Haigui
|
|
2010
|
518 |
9 |
p. 2342-2345
4 p.
|
artikel
|
| 11 |
Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes
|
Auret, F.D.
|
|
2010
|
518 |
9 |
p. 2485-2488
4 p.
|
artikel
|
| 12 |
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution
|
Bisognin, G.
|
|
2010
|
518 |
9 |
p. 2326-2329
4 p.
|
artikel
|
| 13 |
Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates
|
Figuet, C.
|
|
2010
|
518 |
9 |
p. 2458-2461
4 p.
|
artikel
|
| 14 |
Device performance of p-Ge MOSFETs at liquid nitrogen temperature
|
Ohyama, H.
|
|
2010
|
518 |
9 |
p. 2513-2516
4 p.
|
artikel
|
| 15 |
Divacancies at room temperature in germanium
|
Slotte, J.
|
|
2010
|
518 |
9 |
p. 2314-2316
3 p.
|
artikel
|
| 16 |
Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p+ polycrystalline silicon gate used in CMOS technologies
|
Colin, A.
|
|
2010
|
518 |
9 |
p. 2390-2393
4 p.
|
artikel
|
| 17 |
Dopant incorporation in thin strained Si layers implanted with Sb
|
Azarov, A.Yu.
|
|
2010
|
518 |
9 |
p. 2474-2477
4 p.
|
artikel
|
| 18 |
Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium
|
Fazzini, P.F.
|
|
2010
|
518 |
9 |
p. 2338-2341
4 p.
|
artikel
|
| 19 |
Effect of Si and He implantation in the formation of ultra shallow junctions in Si
|
Xu, M.
|
|
2010
|
518 |
9 |
p. 2354-2356
3 p.
|
artikel
|
| 20 |
Effects of electron irradiation on SiGe devices
|
Ohyama, H.
|
|
2010
|
518 |
9 |
p. 2517-2520
4 p.
|
artikel
|
| 21 |
Effects of tunnel oxide process on SONOS flash memory characteristics
|
Li, Dong Hua
|
|
2010
|
518 |
9 |
p. 2509-2512
4 p.
|
artikel
|
| 22 |
Efficient relaxation of strained-SiGe layers induced by thermal oxidation
|
Jang, J.H.
|
|
2010
|
518 |
9 |
p. 2462-2465
4 p.
|
artikel
|
| 23 |
Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers
|
Hirayama, Kana
|
|
2010
|
518 |
9 |
p. 2505-2508
4 p.
|
artikel
|
| 24 |
Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900°C
|
Voronkova, G.I.
|
|
2010
|
518 |
9 |
p. 2350-2353
4 p.
|
artikel
|
| 25 |
Electronic structural details of donor–vacancy complexes in Si-doped Ge and Ge-doped Si
|
Coutinho, J.
|
|
2010
|
518 |
9 |
p. 2381-2385
5 p.
|
artikel
|
| 26 |
Equilibrium segregation coefficient and solid solubility of B in Czochralski Ge crystal growth
|
Taishi, Toshinori
|
|
2010
|
518 |
9 |
p. 2409-2412
4 p.
|
artikel
|
| 27 |
Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing
|
Sahin, D.
|
|
2010
|
518 |
9 |
p. 2365-2369
5 p.
|
artikel
|
| 28 |
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
|
Wang, G.
|
|
2010
|
518 |
9 |
p. 2538-2541
4 p.
|
artikel
|
| 29 |
First-principles study of near surface point defects stability in Si (100) and SiGe(100)
|
Fetah, S.
|
|
2010
|
518 |
9 |
p. 2418-2421
4 p.
|
artikel
|
| 30 |
Formation of germanates on germanium by chemical vapor treatment
|
Kalem, Seref
|
|
2010
|
518 |
9 |
p. 2377-2380
4 p.
|
artikel
|
| 31 |
Formation of uniaxially strained SiGe by selective ion implantation technique
|
Sawano, Kentarou
|
|
2010
|
518 |
9 |
p. 2454-2457
4 p.
|
artikel
|
| 32 |
Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys
|
Michaillat, M.
|
|
2010
|
518 |
9 |
p. 2437-2441
5 p.
|
artikel
|
| 33 |
Future challenges in CMOS process modeling
|
Pichler, P.
|
|
2010
|
518 |
9 |
p. 2478-2484
7 p.
|
artikel
|
| 34 |
Germanium on insulator near-infrared photodetectors fabricated by layer transfer
|
Sorianello, V.
|
|
2010
|
518 |
9 |
p. 2501-2504
4 p.
|
artikel
|
| 35 |
High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon
|
Chen, Jiahe
|
|
2010
|
518 |
9 |
p. 2334-2337
4 p.
|
artikel
|
| 36 |
Honeycomb voids due to ion implantation in germanium
|
Kaiser, R.J.
|
|
2010
|
518 |
9 |
p. 2323-2325
3 p.
|
artikel
|
| 37 |
Hydrogen in amorphous Si and Ge during solid phase epitaxy
|
Johnson, B.C.
|
|
2010
|
518 |
9 |
p. 2317-2322
6 p.
|
artikel
|
| 38 |
Influence of O contamination and Au cluster properties on the structural features of Si nanowires
|
Pecora, Emanuele F.
|
|
2010
|
518 |
9 |
p. 2562-2564
3 p.
|
artikel
|
| 39 |
Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
|
Moers, J.
|
|
2010
|
518 |
9 |
p. 2565-2568
4 p.
|
artikel
|
| 40 |
Interaction of point defects with impurities in the Si–SiO2 system and its influence on the properties of the interface
|
Kropman, D.
|
|
2010
|
518 |
9 |
p. 2374-2376
3 p.
|
artikel
|
| 41 |
Interdiffusion and growth of chromium silicide at the interface of Cr/Si(As) system during rapid thermal annealing
|
Benkherbache, H.
|
|
2010
|
518 |
9 |
p. 2370-2373
4 p.
|
artikel
|
| 42 |
I–V and low frequency noise characterization of poly and amorphous silicon Ti- and Co-salicide resistors
|
Raoult, J.
|
|
2010
|
518 |
9 |
p. 2497-2500
4 p.
|
artikel
|
| 43 |
Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs
|
Simoen, E.
|
|
2010
|
518 |
9 |
p. 2493-2496
4 p.
|
artikel
|
| 44 |
Majority carrier capture rates for transition metal impurities in germanium
|
Lauwaert, J.
|
|
2010
|
518 |
9 |
p. 2330-2333
4 p.
|
artikel
|
| 45 |
Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration
|
Canneaux, Thomas
|
|
2010
|
518 |
9 |
p. 2394-2397
4 p.
|
artikel
|
| 46 |
Molecular dynamics simulation of silicon oxidization
|
Ganster, Patrick
|
|
2010
|
518 |
9 |
p. 2422-2426
5 p.
|
artikel
|
| 47 |
325nm-laser-excited micro-photoluminescence for strained Si films
|
Wang, Dong
|
|
2010
|
518 |
9 |
p. 2470-2473
4 p.
|
artikel
|
| 48 |
Non-melting annealing of silicon by CO2 laser
|
Florakis, A.
|
|
2010
|
518 |
9 |
p. 2551-2554
4 p.
|
artikel
|
| 49 |
Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)
|
Conde, J.C.
|
|
2010
|
518 |
9 |
p. 2431-2436
6 p.
|
artikel
|
| 50 |
Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance
|
Nguyen, A.P.D.
|
|
2010
|
518 |
9 |
p. 2361-2364
4 p.
|
artikel
|
| 51 |
Ordered Ge-dot arrays in a Si-waveguide for 1.5µm detectors
|
Lavchiev, Ventsislav
|
|
2010
|
518 |
9 |
p. 2573-2575
3 p.
|
artikel
|
| 52 |
Overlayer stress effects on defect formation in Si and Ge
|
Cowern, Nick E.B.
|
|
2010
|
518 |
9 |
p. 2442-2447
6 p.
|
artikel
|
| 53 |
P+/n junction leakage in thin selectively grown Ge-in-STI substrates
|
Eneman, G.
|
|
2010
|
518 |
9 |
p. 2489-2492
4 p.
|
artikel
|
| 54 |
Radiation enhanced diffusion of B in crystalline Ge
|
Bruno, E.
|
|
2010
|
518 |
9 |
p. 2386-2389
4 p.
|
artikel
|
| 55 |
Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy
|
Fissel, A.
|
|
2010
|
518 |
9 |
p. 2546-2550
5 p.
|
artikel
|
| 56 |
Si versus Ge for future microelectronics
|
Claeys, C.
|
|
2010
|
518 |
9 |
p. 2301-2306
6 p.
|
artikel
|
| 57 |
Structural study of Si1− x Ge x nanocrystals embedded in SiO2 films
|
Pinto, S.R.C.
|
|
2010
|
518 |
9 |
p. 2569-2572
4 p.
|
artikel
|
| 58 |
Subject Index
|
|
|
2010
|
518 |
9 |
p. 2578-2583
6 p.
|
artikel
|
| 59 |
Sub-threshold study of undoped trigate nFinFET
|
Tettamanzi, G.C.
|
|
2010
|
518 |
9 |
p. 2521-2523
3 p.
|
artikel
|
| 60 |
Symposium I: Silicon and germanium issues for future CMOS devices
|
Pelaz, Lourdes
|
|
2010
|
518 |
9 |
p. 2299-2300
2 p.
|
artikel
|
| 61 |
Synthesis of strained SiGe on Si(100) by pulsed laser induced epitaxy
|
Kociniewski, T.
|
|
2010
|
518 |
9 |
p. 2542-2545
4 p.
|
artikel
|
| 62 |
Tensile strain engineering of Si thin films using porous Si substrates
|
Boucherif, A.
|
|
2010
|
518 |
9 |
p. 2466-2469
4 p.
|
artikel
|
| 63 |
Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
|
D'Costa, V.R.
|
|
2010
|
518 |
9 |
p. 2531-2537
7 p.
|
artikel
|
| 64 |
Theory of defects in Si and Ge: Past, present and recent developments
|
Estreicher, S.K.
|
|
2010
|
518 |
9 |
p. 2413-2417
5 p.
|
artikel
|
| 65 |
Thermally activated conduction mechanisms in Silicon Nitride MIS structures
|
Kanapitsas, A.
|
|
2010
|
518 |
9 |
p. 2357-2360
4 p.
|
artikel
|
| 66 |
Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs
|
Bazizi, E.M.
|
|
2010
|
518 |
9 |
p. 2427-2430
4 p.
|
artikel
|
| 67 |
Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175°C by rf-PECVD
|
Labrune, M.
|
|
2010
|
518 |
9 |
p. 2528-2530
3 p.
|
artikel
|
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