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                             67 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Al-induced low-temperature crystallization of Si1− x Ge x (0< x <1) by controlling layer exchange process Kurosawa, Masashi
 2010
 518 6S1 p. S174-S178
5 p.
 artikel
2 Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cells Lee, Minjoo Larry
 2010
 518 6S1 p. S76-S79
4 p.
 artikel
3 Analysis of silicon germanium vapor phase epitaxy kinetics Tomasini, P.
 2010
 518 6S1 p. S12-S17
6 p.
 artikel
4 Antimony doped Si Esaki diodes without post growth annealing Oehme, M.
 2010
 518 6S1 p. S65-S67
3 p.
 artikel
5 Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures Storck, Peter
 2010
 518 6S1 p. S23-S29
7 p.
 artikel
6 B atomic layer doping of Ge Yamamoto, Yuji
 2010
 518 6S1 p. S44-S47
4 p.
 artikel
7 Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films Liu, Wei
 2010
 518 6S1 p. S128-S132
5 p.
 artikel
8 Composition redistribution of self-assembled Ge islands on Si (001) during annealing Lee, S.W.
 2010
 518 6S1 p. S196-S199
4 p.
 artikel
9 Contents 2010
 518 6S1 p. iii-vi
nvt p.
 artikel
10 Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation Hu, Quanli
 2010
 518 6S1 p. S217-S221
5 p.
 artikel
11 Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1− x − y Ge x C y on Si (1 0 0) using Raman spectroscopy Wasyluk, Joanna
 2010
 518 6S1 p. S151-S153
3 p.
 artikel
12 Effective mass and subband structure of strained Si in a PMOS inversion layer with external stress Chang, Shu-Tong
 2010
 518 6S1 p. S154-S158
5 p.
 artikel
13 Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si Kobayashi, S.
 2010
 518 6S1 p. S136-S139
4 p.
 artikel
14 Effect of thickness on structural and magnetic properties of Mn5Ge3 films grown on Ge(111) by solid phase epitaxy Spiesser, A.
 2010
 518 6S1 p. S113-S117
5 p.
 artikel
15 Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating Sugawara, Katsutoshi
 2010
 518 6S1 p. S57-S61
5 p.
 artikel
16 Enabling Moore's Law beyond CMOS technologies through heteroepitaxy Thomas, S.G.
 2010
 518 6S1 p. S53-S56
4 p.
 artikel
17 Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy Yamada, S.
 2010
 518 6S1 p. S278-S280
3 p.
 artikel
18 Epitaxially grown emitters for thin film silicon solar cells result in 16% efficiency Van Nieuwenhuysen, K.
 2010
 518 6S1 p. S80-S82
3 p.
 artikel
19 Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC Camarda, M.
 2010
 518 6S1 p. S159-S161
3 p.
 artikel
20 Fabrication of double-dot single-electron transistor in silicon nanowire Jo, Mingyu
 2010
 518 6S1 p. S186-S189
4 p.
 artikel
21 Formation and characterization of hybrid nanodot stack structure for floating gate application Miyazaki, Seiichi
 2010
 518 6S1 p. S30-S34
5 p.
 artikel
22 Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy Toko, Kaoru
 2010
 518 6S1 p. S179-S181
3 p.
 artikel
23 Formation processes of Ge3N4 films by radical nitridation and their electrical properties Kato, Kimihiko
 2010
 518 6S1 p. S226-S230
5 p.
 artikel
24 Germanium for silicon photonics Ishikawa, Yasuhiko
 2010
 518 6S1 p. S83-S87
5 p.
 artikel
25 Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy Tanaka, T.
 2010
 518 6S1 p. S170-S173
4 p.
 artikel
26 Heavy atomic-layer doping of nitrogen in Si1− x Ge x film epitaxially grown on Si(100) by ultraclean low-pressure CVD Kawashima, Tomoyuki
 2010
 518 6S1 p. S62-S64
3 p.
 artikel
27 Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD Nosaka, Takayuki
 2010
 518 6S1 p. S140-S142
3 p.
 artikel
28 Heavy carbon atomic-layer doping at Si1− x Ge x /Si heterointerface Hirano, Tomoya
 2010
 518 6S1 p. S222-S225
4 p.
 artikel
29 High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors Molle, Alessandro
 2010
 518 6S1 p. S96-S103
8 p.
 artikel
30 High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates Severino, A.
 2010
 518 6S1 p. S165-S169
5 p.
 artikel
31 Impact of Si cap layer growth on surface segregation of P incorporated by atomic layer doping Chiba, Yohei
 2010
 518 6S1 p. S231-S233
3 p.
 artikel
32 Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas Dechoux, N.
 2010
 518 6S1 p. S92-S95
4 p.
 artikel
33 Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe Werner, J.
 2010
 518 6S1 p. S234-S236
3 p.
 artikel
34 Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks Molle, Alessandro
 2010
 518 6S1 p. S123-S127
5 p.
 artikel
35 Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectrics Cosceev, A.
 2010
 518 6S1 p. S281-S284
4 p.
 artikel
36 Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation Hoshi, Y.
 2010
 518 6S1 p. S162-S164
3 p.
 artikel
37 Kinetic investigation of the electrochemical synthesis of vertically-aligned periodic arrays of silicon nanorods on (001)Si substrate Cheng, S.L.
 2010
 518 6S1 p. S190-S195
6 p.
 artikel
38 Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed Toko, Kaoru
 2010
 518 6S1 p. S182-S185
4 p.
 artikel
39 Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge(111) heterostructures Dau, M.-T.
 2010
 518 6S1 p. S266-S269
4 p.
 artikel
40 Low temperature growth of Ge1− x Sn x buffer layers for tensile–strained Ge layers Shimura, Yosuke
 2010
 518 6S1 p. S2-S5
4 p.
 artikel
41 Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions Lin, C.-H.
 2010
 518 6S1 p. S237-S240
4 p.
 artikel
42 Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices Miyao, M.
 2010
 518 6S1 p. S273-S277
5 p.
 artikel
43 Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory Chouket, A.
 2010
 518 6S1 p. S212-S216
5 p.
 artikel
44 Multiscale simulation for epitaxial silicon carbide growth by chlorides route Masi, Maurizio
 2010
 518 6S1 p. S6-S11
6 p.
 artikel
45 Novel chemical precursors and novel CVD strategies enabling low temperature epitaxy of Si and Si:C alloys Bauer, M.
 2010
 518 6S1 p. S200-S203
4 p.
 artikel
46 Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layers Conde, J.C.
 2010
 518 6S1 p. S143-S146
4 p.
 artikel
47 Observation of discrete dopant potential and its application to Si single-electron devices Tabe, Michiharu
 2010
 518 6S1 p. S38-S43
6 p.
 artikel
48 Optical and structural investigation of Si nanoclusters in amorphous hydrogenated silicon Shcherbyna, Ye. S.
 2010
 518 6S1 p. S204-S207
4 p.
 artikel
49 Optimization of external poly base sheet resistance in 0.13μm quasi self-aligned SiGe:C HBTs You, S.
 2010
 518 6S1 p. S68-S71
4 p.
 artikel
50 Phosphorus doping of silicon at substrate temperatures above 600°C Thompson, P.E.
 2010
 518 6S1 p. S270-S272
3 p.
 artikel
51 Preface Xie, Ya-Hong
 2010
 518 6S1 p. S1-
1 p.
 artikel
52 Quest of electric field controlled spintronics in MnGe Wang, Kang L.
 2010
 518 6S1 p. S104-S112
9 p.
 artikel
53 Self-assembled Ge/Si hetero-nanocrystals for nonvolatile memory application Li, Bei
 2010
 518 6S1 p. S262-S265
4 p.
 artikel
54 Short-channel epitaxial germanium pMOS transistors Eneman, G.
 2010
 518 6S1 p. S88-S91
4 p.
 artikel
55 Si/Ge/Si double heterojunction solar cells Lin, C.-H.
 2010
 518 6S1 p. S255-S258
4 p.
 artikel
56 Simulation of a nanoscale strained Si NMOSFET with a silicon–carbon alloy stressor Huang, Jacky
 2010
 518 6S1 p. S72-S75
4 p.
 artikel
57 Simulation of nanorod structures for an amorphous silicon-based solar cell Tang, Ming
 2010
 518 6S1 p. S259-S261
3 p.
 artikel
58 Si1−x Ge x growth using Si3H8 by low temperature chemical vapor deposition Takeuchi, Shotaro
 2010
 518 6S1 p. S18-S22
5 p.
 artikel
59 Stability of silicon germanium stressors Tomasini, P.
 2010
 518 6S1 p. S133-S135
3 p.
 artikel
60 Strain engineering of nanoscale Si MOS devices Huang, Jacky
 2010
 518 6S1 p. S241-S245
5 p.
 artikel
61 Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing Kato, T.
 2010
 518 6S1 p. S147-S150
4 p.
 artikel
62 Structural properties of epitaxial SrHfO3 thin films on Si (001) Sawkar-Mathur, Monica
 2010
 518 6S1 p. S118-S122
5 p.
 artikel
63 Study of the effects of growth temperature and time on the alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes Olmedo, Mario
 2010
 518 6S1 p. S35-S37
3 p.
 artikel
64 Surface phonons and exciton–polariton coupling in SiC nanocrystals Polupan, G.
 2010
 518 6S1 p. S208-S211
4 p.
 artikel
65 TCAD simulation of hydrogenated amorphous silicon-carbon/microcrystalline-silicon/hydrogenated amorphous silicon-germanium PIN solar cells Chang, S.T.
 2010
 518 6S1 p. S250-S254
5 p.
 artikel
66 The gap state density of micro/nano-crystalline silicon active layer on flexible substrate Lee, M.H.
 2010
 518 6S1 p. S246-S249
4 p.
 artikel
67 Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32nm CMOS technology Nguyen, N.D.
 2010
 518 6S1 p. S48-S52
5 p.
 artikel
                             67 gevonden resultaten
 
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