| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced key technologies for magnetron sputtering and PECVD of inorganic and hybrid transparent coatings
|
Frach, Peter
|
|
2010
|
518 |
11 |
p. 3105-3108
4 p.
|
artikel
|
| 2 |
Advances in chromogenic materials and devices
|
Granqvist, C.G.
|
|
2010
|
518 |
11 |
p. 3046-3053
8 p.
|
artikel
|
| 3 |
Al-doped ZnO (AZO) films deposited by reactive sputtering with unipolar-pulsing and plasma-emission control systems
|
Hirohata, Kento
|
|
2010
|
518 |
11 |
p. 2980-2983
4 p.
|
artikel
|
| 4 |
Analysis of carrier modulation in channel of ferroelectric-gate transistors having polar semiconductor
|
Fukushima, Tadahiro
|
|
2010
|
518 |
11 |
p. 3026-3029
4 p.
|
artikel
|
| 5 |
Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells
|
Koida, Takashi
|
|
2010
|
518 |
11 |
p. 2930-2933
4 p.
|
artikel
|
| 6 |
A study of deposition of ITO films on organic layer using facing target sputtering in Ar and Kr gases
|
Lei, Hao
|
|
2010
|
518 |
11 |
p. 2926-2929
4 p.
|
artikel
|
| 7 |
Blue PL and EL emissions from Bi-activated binary oxide thin-film phosphors
|
Fukada, Haruki
|
|
2010
|
518 |
11 |
p. 3067-3070
4 p.
|
artikel
|
| 8 |
Characteristics of laser-annealed ZnO thin film transistors
|
Kim, Jun-Je
|
|
2010
|
518 |
11 |
p. 3022-3025
4 p.
|
artikel
|
| 9 |
Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition
|
Asahara, Hirokazu
|
|
2010
|
518 |
11 |
p. 2953-2956
4 p.
|
artikel
|
| 10 |
Characterization of Zn1− x Mg x O transparent conducting thin films fabricated by multi-cathode RF-magnetron sputtering
|
Maejima, K.
|
|
2010
|
518 |
11 |
p. 2949-2952
4 p.
|
artikel
|
| 11 |
Comparative study of resistivity characteristics between transparent conducting AZO and GZO thin films for use at high temperatures
|
Nomoto, Jun-ichi
|
|
2010
|
518 |
11 |
p. 2937-2940
4 p.
|
artikel
|
| 12 |
Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress
|
Nomura, Kenji
|
|
2010
|
518 |
11 |
p. 3012-3016
5 p.
|
artikel
|
| 13 |
Contents
|
|
|
2010
|
518 |
11 |
p. iii-v
nvt p.
|
artikel
|
| 14 |
Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films
|
Kakehi, Yoshiharu
|
|
2010
|
518 |
11 |
p. 3097-3100
4 p.
|
artikel
|
| 15 |
Control of cathodic potential for deposition of ZnO by constant-current electrochemical method
|
Nouzu, Naoya
|
|
2010
|
518 |
11 |
p. 2957-2960
4 p.
|
artikel
|
| 16 |
DC sputter deposition of amorphous indium–gallium–zinc–oxide (a-IGZO) films with H2O introduction
|
Aoi, Takafumi
|
|
2010
|
518 |
11 |
p. 3004-3007
4 p.
|
artikel
|
| 17 |
Development of new transparent conductors and device applications utilizing a multidisciplinary approach
|
Szyszka, Bernd
|
|
2010
|
518 |
11 |
p. 3109-3114
6 p.
|
artikel
|
| 18 |
Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing
|
Kikuchi, Yutomo
|
|
2010
|
518 |
11 |
p. 3017-3021
5 p.
|
artikel
|
| 19 |
Discharge characteristics of a plasma display panel with hump-shape electrodes
|
Song, In Cheol
|
|
2010
|
518 |
11 |
p. 3122-3125
4 p.
|
artikel
|
| 20 |
Effect of sublayer surface treatments on ZnO transparent conductive oxides using dc magnetron sputtering
|
Imanishi, Yasuo
|
|
2010
|
518 |
11 |
p. 2945-2948
4 p.
|
artikel
|
| 21 |
Electronic structural analysis of transparent In2O3–ZnO films by hard X-ray photoelectron spectroscopy
|
Shibuya, Tadao
|
|
2010
|
518 |
11 |
p. 3008-3011
4 p.
|
artikel
|
| 22 |
Enhanced characterization of ITO films deposited on PET by RF superimposed DC magnetron sputtering
|
Kim, S.I.
|
|
2010
|
518 |
11 |
p. 3085-3088
4 p.
|
artikel
|
| 23 |
Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer
|
Shinozaki, Tomomasa
|
|
2010
|
518 |
11 |
p. 2996-2999
4 p.
|
artikel
|
| 24 |
Fabrication of highly conductive Ta-doped SnO2 polycrystalline films on glass using seed-layer technique by pulse laser deposition
|
Nakao, Shoichiro
|
|
2010
|
518 |
11 |
p. 3093-3096
4 p.
|
artikel
|
| 25 |
Fabrication of Tb–Mg codoped CaSnO3 perovskite thin films and electroluminescence devices
|
Ueda, Kazushige
|
|
2010
|
518 |
11 |
p. 3063-3066
4 p.
|
artikel
|
| 26 |
Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition
|
Nakamura, Tatsuru
|
|
2010
|
518 |
11 |
p. 2971-2974
4 p.
|
artikel
|
| 27 |
Highly flexible indium zinc oxide electrode grown on PET substrate by cost efficient roll-to-roll sputtering process
|
Park, Yong-Seok
|
|
2010
|
518 |
11 |
p. 3071-3074
4 p.
|
artikel
|
| 28 |
Highly sensitive ultraviolet detector using a ZnO/Si layered SAW oscillator
|
Wei, Ching-Liang
|
|
2010
|
518 |
11 |
p. 3059-3062
4 p.
|
artikel
|
| 29 |
Improvements of spatial resistivity distribution in transparent conducting Al-doped ZnO thin films deposited by DC magnetron sputtering
|
Oda, Jun-ichi
|
|
2010
|
518 |
11 |
p. 2984-2987
4 p.
|
artikel
|
| 30 |
Influence of VI/II ratios on the growth of ZnO thin films on sapphire substrates by low temperature MOCVD
|
Kong, Bo Hyun
|
|
2010
|
518 |
11 |
p. 2975-2979
5 p.
|
artikel
|
| 31 |
Investigation of brittle failure in transparent conductive oxide and permeation barrier oxide multilayers on flexible polymers
|
Lee, Gun-Hwan
|
|
2010
|
518 |
11 |
p. 3075-3080
6 p.
|
artikel
|
| 32 |
Microstructure of a-plane ZnO grown on LaAlO3 (001)
|
Wang, Wei-Lin
|
|
2010
|
518 |
11 |
p. 2967-2970
4 p.
|
artikel
|
| 33 |
[No title]
|
Hosono, Hideo
|
|
2010
|
518 |
11 |
p. 2925-
1 p.
|
artikel
|
| 34 |
OLED manufacturing for large area lighting applications
|
Eritt, M.
|
|
2010
|
518 |
11 |
p. 3042-3045
4 p.
|
artikel
|
| 35 |
Optical on-line monitoring for the long-term stabilization of a reactive mid-frequency sputtering process of Al-doped zinc oxide films
|
Sittinger, V.
|
|
2010
|
518 |
11 |
p. 3115-3118
4 p.
|
artikel
|
| 36 |
Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays
|
Hanada, Toru
|
|
2010
|
518 |
11 |
p. 3089-3092
4 p.
|
artikel
|
| 37 |
Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells
|
Faÿ, Sylvie
|
|
2010
|
518 |
11 |
p. 2961-2966
6 p.
|
artikel
|
| 38 |
Potential of thin-film silicon solar cells by using high haze TCO superstrates
|
Krc, J.
|
|
2010
|
518 |
11 |
p. 3054-3058
5 p.
|
artikel
|
| 39 |
Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering
|
Kang, Y.M.
|
|
2010
|
518 |
11 |
p. 3081-3084
4 p.
|
artikel
|
| 40 |
Review of pulmonary toxicity of indium compounds to animals and humans
|
Tanaka, Akiyo
|
|
2010
|
518 |
11 |
p. 2934-2936
3 p.
|
artikel
|
| 41 |
Role of high-k gate insulators for oxide thin film transistors
|
Lee, Sang Yeol
|
|
2010
|
518 |
11 |
p. 3030-3032
3 p.
|
artikel
|
| 42 |
Steady-state photoconductivity of amorphous In–Ga–Zn–O
|
Lee, Dong Hee
|
|
2010
|
518 |
11 |
p. 3000-3003
4 p.
|
artikel
|
| 43 |
Substrate engineering of LaAlO3 for non-polar ZnO growth
|
Ho, Yen-Teng
|
|
2010
|
518 |
11 |
p. 2988-2991
4 p.
|
artikel
|
| 44 |
Surface-oxidized tungsten for energy-storable dye-sensitized solar cells
|
Saito, Yosuke
|
|
2010
|
518 |
11 |
p. 3033-3036
4 p.
|
artikel
|
| 45 |
The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes
|
Cho, Hyung Jun
|
|
2010
|
518 |
11 |
p. 2941-2944
4 p.
|
artikel
|
| 46 |
The effects of permittivity and thickness of dielectric layers on micro dielectric barrier discharges
|
Shim, Seung Bo
|
|
2010
|
518 |
11 |
p. 3037-3041
5 p.
|
artikel
|
| 47 |
Thermal crystallization kinetics and crystallite size distribution of amorphous ITO film deposited in the presence or absence of water vapor
|
Wang, Meihan
|
|
2010
|
518 |
11 |
p. 2992-2995
4 p.
|
artikel
|
| 48 |
Thermophysical properties of aluminum oxide and molybdenum layered films
|
Oka, Nobuto
|
|
2010
|
518 |
11 |
p. 3119-3121
3 p.
|
artikel
|
| 49 |
Transparent conducting Nb-doped anatase TiO2 (TNO) thin films sputtered from various oxide targets
|
Yamada, Naoomi
|
|
2010
|
518 |
11 |
p. 3101-3104
4 p.
|
artikel
|
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