| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation of the possibility of Bose condensation of excitons in semiconducting films
|
Haroutyunian, V.A.
|
|
1984
|
115 |
3 |
p. 245-251
7 p.
|
artikel
|
| 2 |
Deposition of transparent conducting indium tin oxide thin films by reactive ion plating
|
Yuanri, Cui
|
|
1984
|
115 |
3 |
p. 195-201
7 p.
|
artikel
|
| 3 |
Influence of oxygen on the behaviour of diodes fabricated from sputtered TiO2 films on gold
|
Jérisian, R.
|
|
1984
|
115 |
3 |
p. 229-235
7 p.
|
artikel
|
| 4 |
Internal stress and structure of evaporated chromium and MgF2 films and their dependence on substrate temperature
|
Abermann, R.
|
|
1984
|
115 |
3 |
p. 185-194
10 p.
|
artikel
|
| 5 |
Preferential ionization in reactive sputtering discharges
|
Hecq, M.
|
|
1984
|
115 |
3 |
p. L45-L48
nvt p.
|
artikel
|
| 6 |
Roughness contributions to resolution in ion sputter depth profiles of polycrystalline metal films
|
Seah, M.P.
|
|
1984
|
115 |
3 |
p. 203-216
14 p.
|
artikel
|
| 7 |
Selected area, stationary beam cratering for high sensitivity depth profiling with a computerized Auger microprobe
|
Poppa, Helmut
|
|
1984
|
115 |
3 |
p. 217-228
12 p.
|
artikel
|
| 8 |
Structured selective coatings
|
Patel, R.D.
|
|
1984
|
115 |
3 |
p. 169-184
16 p.
|
artikel
|
| 9 |
The simultaneous growth of monocrystalline and polycrystalline silicon films with controlled parameters
|
Abdullayev, A.G.
|
|
1984
|
115 |
3 |
p. 237-243
7 p.
|
artikel
|
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