nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Author index
|
|
|
1984 |
112 |
4 |
p. 381- 1 p. |
artikel |
2 |
Contents of volume 112
|
|
|
1984 |
112 |
4 |
p. 382-384 3 p. |
artikel |
3 |
Diffusion of silicon in aluminum-rich alloy thin films
|
Garg, N. |
|
1984 |
112 |
4 |
p. 317-328 12 p. |
artikel |
4 |
Electrical and optical properties of thin In2O3:Sn and SnO2:SbIn2O3:Sn films obtained by the hydrolysis method
|
Kulaszewicz, S. |
|
1984 |
112 |
4 |
p. 313-316 4 p. |
artikel |
5 |
Film deposition in plasma etching
|
Poll, H.U. |
|
1984 |
112 |
4 |
p. 369-380 12 p. |
artikel |
6 |
Interaction dynamics of dimensionally quantized electrons with intense opposite electromagnetic waves
|
Harutunyan, G.M. |
|
1984 |
112 |
4 |
p. L13-L17 nvt p. |
artikel |
7 |
Paramt̀res de conduction électrique dans des couches minces de NiP obtenues par dépôt chimique
|
Pichard, C.R. |
|
1984 |
112 |
4 |
p. 289-299 11 p. |
artikel |
8 |
Photoenhance migration of silver atoms in transparent heat mirror coatings
|
Chiba, Kiyoshi |
|
1984 |
112 |
4 |
p. 359-367 9 p. |
artikel |
9 |
Space-charge-limited current measurement of traps in p-type electrochemically deposited CdTe thin films
|
Ou, S.S. |
|
1984 |
112 |
4 |
p. 301-308 8 p. |
artikel |
10 |
Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen
|
Szuber, J. |
|
1984 |
112 |
4 |
p. 309-312 4 p. |
artikel |
11 |
The effect of deposition mechanism on the composition of surface films on silicon
|
Heimann, R.B. |
|
1984 |
112 |
4 |
p. 329-348 20 p. |
artikel |
12 |
The structure and composition of the CdSe-(Oxidized titanium) interface: An investigation by transmission electron microscopy and electron diffraction
|
Albu-Yaron, Ana |
|
1984 |
112 |
4 |
p. 349-358 10 p. |
artikel |