no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A dual-band CMOS LC-VCO with highly linear frequency tuning characteristics
|
Luo, Yanbin |
|
|
46 |
12PB |
p. 1420-1425 |
article |
2 |
A high-efficiency full-wave CMOS rectifying charge pump for RF energy harvesting applications
|
Wang, Weiyin |
|
|
46 |
12PB |
p. 1447-1452 |
article |
3 |
A linear, low power, 2.5-dB NF LNA for UWB application in a 0.18μm CMOS
|
Mohammadi, Ismail |
|
|
46 |
12PB |
p. 1398-1408 |
article |
4 |
A low-pass SPST switch in 65nm CMOS
|
He, Jin |
|
|
46 |
12PB |
p. 1464-1468 |
article |
5 |
A low-power and high-data rate passive RFID transceiver using 28-nm CMOS technology
|
Abdo, Ibrahim |
|
|
46 |
12PB |
p. 1426-1433 |
article |
6 |
A 5-ps Vernier sub-ranging time-to-digital converter with DNL calibration
|
Ko, Chi-Tung |
|
|
46 |
12PB |
p. 1469-1480 |
article |
7 |
Design of asymmetrical resonator for microstrip triple-band and broadband bandpass filters
|
Hsu, Ko-Wen |
|
|
46 |
12PB |
p. 1434-1441 |
article |
8 |
Editorial board
|
|
|
|
46 |
12PB |
p. iii |
article |
9 |
Fast locking adaptive PLL using Dual-Edge Phase-Frequency Detector
|
Li, Chung-Yi |
|
|
46 |
12PB |
p. 1413-1419 |
article |
10 |
High-efficiency K-band MMIC power amplifier using multi-harmonic load terminations
|
Tu, Zhichen |
|
|
46 |
12PB |
p. 1453-1458 |
article |
11 |
Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p–n diode
|
Yang, Chih Chin |
|
|
46 |
12PB |
p. 1392-1397 |
article |
12 |
Injection-locked frequency divider using single-injected dual-injection MOSFETs
|
Jang, Sheng-Lyang |
|
|
46 |
12PB |
p. 1409-1412 |
article |
13 |
LTCC Ka-band bandpass filters with half-wavelength inverted-L stubs
|
Chin, Kuo-Sheng |
|
|
46 |
12PB |
p. 1442-1446 |
article |
14 |
Optimization of loss tangent and capacitor size of micro-vacuum dielectric capacitors
|
Tam, Wing-Shan |
|
|
46 |
12PB |
p. 1382-1386 |
article |
15 |
Radio frequency integrated circuit (RFIC)
|
Kok, Chi Wah |
|
|
46 |
12PB |
p. 1381 |
article |
16 |
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
|
Jebalin, Binola K. |
|
|
46 |
12PB |
p. 1387-1391 |
article |
17 |
Very compact differential transformer-type bandpass filter with mixed coupled topology using integrated passive device technology
|
Li, Yang |
|
|
46 |
12PB |
p. 1459-1463 |
article |