| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anisotropic transport properties of quantum dot arrays fabricated by the edge-defined nanowires
|
Yi, Jong Chang
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40 |
3 |
p. 473-475
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artikel
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| 2 |
A novel nonvolatile memory based on self-organized quantum dots
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Marent, A.
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40 |
3 |
p. 492-495
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artikel
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| 3 |
Applications of colloidal quantum dots
|
Sun, Ke
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40 |
3 |
p. 644-649
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artikel
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| 4 |
A real-time quantitative assessment of self-assembled quantum dots by reflection high-energy electron diffraction
|
Rajapaksha, Chandani
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40 |
3 |
p. 462-464
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artikel
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| 5 |
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs
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Lisesivdin, S.B.
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40 |
3 |
p. 413-417
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artikel
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| 6 |
Ballistic mobility and saturation velocity in low-dimensional nanostructures
|
Saad, Ismail
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40 |
3 |
p. 540-542
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artikel
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| 7 |
Brillouin light scattering study of the spin dynamics in nanoscale permalloy stripes: Theory and experiment
|
Nguyen, Hoa T.
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40 |
3 |
p. 598-600
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artikel
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| 8 |
Chaotic noise MOS generator based on logistic map
|
Díaz-Méndez, A.
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40 |
3 |
p. 638-640
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artikel
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| 9 |
Collective optical response from quantum dot molecules
|
Sitek, Anna
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40 |
3 |
p. 505-506
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artikel
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| 10 |
Complex dispersion relation of 1D dielectric photonic crystal with thin metallic layers
|
Alejo-Molina, A.
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40 |
3 |
p. 459-461
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artikel
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| 11 |
Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions
|
Kudrawiec, R.
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40 |
3 |
p. 392-395
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artikel
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| 12 |
Current–voltage characteristics of a silicon nanowire transistor
|
Taghi Ahmadi, Mohammad
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40 |
3 |
p. 547-549
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artikel
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| 13 |
Development of an epitaxial lift-off technology for II–VI nanostructures using ZnMgSSe alloys
|
Moug, R.
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40 |
3 |
p. 530-532
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artikel
|
| 14 |
Dielectric mismatch effect on coupled impurity states in a freestanding nanowire
|
Li, Bin
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40 |
3 |
p. 446-448
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artikel
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| 15 |
Dilute nitride n-i-p-i solar cells
|
Royall, B.
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40 |
3 |
p. 396-398
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artikel
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| 16 |
Dilute nitrides and 1.3μm GaInNAs quantum well lasers on GaAs
|
Wang, S.M.
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40 |
3 |
p. 386-391
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artikel
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| 17 |
Editorial board
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40 |
3 |
p. i
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artikel
|
| 18 |
Effect of quantum dot shape on dynamical dephasing suppression in exciton qubits under applied electric field
|
Hodgson, Thomas E.
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40 |
3 |
p. 502-504
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artikel
|
| 19 |
Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator
|
Boubaker, A.
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40 |
3 |
p. 543-546
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artikel
|
| 20 |
Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films
|
Ižák, T.
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40 |
3 |
p. 615-617
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artikel
|
| 21 |
Electronic structure and optical transitions in Sn and SnGe quantum dots in a Si matrix
|
Moontragoon, P.
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40 |
3 |
p. 483-485
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artikel
|
| 22 |
Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells
|
Sun, Y.
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40 |
3 |
p. 403-405
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artikel
|
| 23 |
Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers
|
Haxha, V.
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40 |
3 |
p. 533-536
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artikel
|
| 24 |
Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy
|
Das Kanungo, P.
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40 |
3 |
p. 452-455
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artikel
|
| 25 |
Entanglement in GaAs and CdSe quantum dots: Exact calculations and DFT approximations
|
Coe, J.P.
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40 |
3 |
p. 499-501
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artikel
|
| 26 |
Fabrication of carbon nanotube arrays for field emission and sensor devices by nanoimprint lithography
|
Yin, Lei
|
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40 |
3 |
p. 604-607
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artikel
|
| 27 |
Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications
|
Buckle, L.
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40 |
3 |
p. 399-402
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artikel
|
| 28 |
Growth dynamics and characteristics of fabricated Fiber Bragg Grating using phase mask method
|
Phing, Ho Sze
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40 |
3 |
p. 608-610
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artikel
|
| 29 |
Growth of III–V semiconductor nanowires by molecular beam epitaxy
|
Jabeen, F.
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40 |
3 |
p. 442-445
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artikel
|
| 30 |
High-grade efficiency III-nitrides semiconductor solar cell
|
Anani, Macho
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40 |
3 |
p. 427-434
|
artikel
|
| 31 |
Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT
|
Brannick, A.
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40 |
3 |
p. 410-412
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artikel
|
| 32 |
Hyper frequency modeling of resonated systems based on piezoelectric LiTaO3 thin layers
|
Al Asmar, R.
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40 |
3 |
p. 624-627
|
artikel
|
| 33 |
InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
|
Carrington, P.J.
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40 |
3 |
p. 469-472
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artikel
|
| 34 |
Integration of low dimensional crystalline Si into functional epitaxial oxides
|
Laha, Apurba
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40 |
3 |
p. 633-637
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artikel
|
| 35 |
Interaction of low-temperature surfactant-grown InAs superlattice layers with arsenic precipitates
|
Alduraibi, M.
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40 |
3 |
p. 550-553
|
artikel
|
| 36 |
Intermixing of InP-based multiple quantum wells for integrated optoelectronic devices
|
May-Arrioja, D.A.
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40 |
3 |
p. 574-576
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artikel
|
| 37 |
Intervalley scattering in GaAs/AlGaAs quantum wells and quantum cascade lasers
|
Mc Tavish, James
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|
40 |
3 |
p. 577-580
|
artikel
|
| 38 |
Investigation of luminescence properties of ZnO nanowires at room temperature
|
Yong-ning, He
|
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|
40 |
3 |
p. 517-519
|
artikel
|
| 39 |
Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness
|
Kashtiban, R.J.
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|
|
40 |
3 |
p. 479-482
|
artikel
|
| 40 |
Investigation of thermal management in optically pumped, antimonide VECSELs
|
Pierściński, Kamil
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|
|
40 |
3 |
p. 558-561
|
artikel
|
| 41 |
Is HEMT operating in 2D mode?
|
Mil'shtein, S.
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40 |
3 |
p. 554-557
|
artikel
|
| 42 |
Laser-induced self-organization of nano-wires on SiO2/Si interface
|
Medvid, Artur
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40 |
3 |
p. 449-451
|
artikel
|
| 43 |
Low-temperature electroluminescence from an ordered nanopore array diode laser
|
Verma, V.B.
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40 |
3 |
p. 584-587
|
artikel
|
| 44 |
Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode
|
Judson, P.D.L.
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40 |
3 |
p. 588-591
|
artikel
|
| 45 |
Measuring the optical properties of a trapped ZnO tetrapod
|
Sharma, R.
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|
40 |
3 |
p. 520-522
|
artikel
|
| 46 |
Modelling of electronic and phononic states of Ge nanostructures
|
Miranda, A.
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|
40 |
3 |
p. 439-441
|
artikel
|
| 47 |
Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures
|
Kosiel, Kamil
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40 |
3 |
p. 565-569
|
artikel
|
| 48 |
Nonparabolicity effects and the spin–split electron dwell time in symmetric III–V double-barrier structures
|
Isić, G.
|
|
|
40 |
3 |
p. 611-614
|
artikel
|
| 49 |
Novel silicon high sensitive photonic sensor
|
Axelevitch, A.
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|
40 |
3 |
p. 435-438
|
artikel
|
| 50 |
Opportunities in dilute nitride III–V semiconductors quantum confined p–i–n solar cells for single carrier resonant tunneling
|
Alemu, A.
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40 |
3 |
p. 421-423
|
artikel
|
| 51 |
Optical matrix elements in tight-binding approach of hydrogenated Si nanowires
|
Miranda, A.
|
|
|
40 |
3 |
p. 456-458
|
artikel
|
| 52 |
Optical spectra of charged anisotropic quantum boxes
|
Trojnar, Anna
|
|
|
40 |
3 |
p. 489-491
|
artikel
|
| 53 |
Oxide nanolayer improving RRAM operational performance
|
Shima, Hisashi
|
|
|
40 |
3 |
p. 628-632
|
artikel
|
| 54 |
Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells
|
Yılmaz, M.
|
|
|
40 |
3 |
p. 406-409
|
artikel
|
| 55 |
Photomodulated transmittance of GaBiAs layers grown on (001) and (311)B GaAs substrates
|
Kudrawiec, R.
|
|
|
40 |
3 |
p. 537-539
|
artikel
|
| 56 |
Photonic quantum ring laser of 3D whispering cave mode
|
Kwon, O’Dae
|
|
|
40 |
3 |
p. 570-573
|
artikel
|
| 57 |
Preface: Workshop of recent advances on low dimensional structures and devices (WRA-LDSD)
|
Saidane, Abdelkader
|
|
|
40 |
3 |
p. 385
|
artikel
|
| 58 |
Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE
|
Vaniš, Jan
|
|
|
40 |
3 |
p. 496-498
|
artikel
|
| 59 |
Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors
|
Jakabovič, J.
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|
40 |
3 |
p. 595-597
|
artikel
|
| 60 |
Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor
|
Kováč, J.
|
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|
40 |
3 |
p. 562-564
|
artikel
|
| 61 |
Properties of amorphous carbon layers for bio-tribological applications
|
Vojs, M.
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40 |
3 |
p. 650-653
|
artikel
|
| 62 |
Quantum-confinement versus strain effects in the Zn ( Cd ) S ( Se ) family of superlattices
|
Obaidat, Ihab M.
|
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|
40 |
3 |
p. 527-529
|
artikel
|
| 63 |
Quantum well model of a conjugated polymer heterostructure solar cell
|
Valenzuela, J.
|
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|
40 |
3 |
p. 424-426
|
artikel
|
| 64 |
Room temperature nano- and microstructure photon detectors
|
Perera, A.G.U.
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|
40 |
3 |
p. 507-511
|
artikel
|
| 65 |
Scattering-limited and ballistic transport in a nano-CMOS circuit
|
Saad, Ismail
|
|
|
40 |
3 |
p. 581-583
|
artikel
|
| 66 |
Strain dependence of piezoelectric coefficients for pseudomorphically grown semiconductors
|
Garg, R.
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40 |
3 |
p. 601-603
|
artikel
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| 67 |
Surfactant-mediated growth of InAs–GaAs superlattices and quantum dot structures grown at different temperatures
|
Alduraibi, M.
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|
40 |
3 |
p. 476-478
|
artikel
|
| 68 |
Synthesis and characterization of blue emitting ZnSe quantum dots
|
Andrade, J.J.
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|
40 |
3 |
p. 641-643
|
artikel
|
| 69 |
Synthesis and nonlinear optical behavior of Ag nanoparticles in PMMA
|
Torres-Cisneros, M.
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|
40 |
3 |
p. 621-623
|
artikel
|
| 70 |
Synthesis and optical characterization of Ag0 nanoparticles
|
Torres-Cisneros, M.
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|
40 |
3 |
p. 618-620
|
artikel
|
| 71 |
Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields
|
Nuytten, T.
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|
40 |
3 |
p. 486-488
|
artikel
|
| 72 |
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
|
Trevisi, G.
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40 |
3 |
p. 465-468
|
artikel
|
| 73 |
Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells
|
Molina, A.
|
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|
40 |
3 |
p. 418-420
|
artikel
|
| 74 |
Transition behaviors from coupled-to-uncoupled CdTe – ZnTe symmetric versus asymmetric double quantum wells
|
Tit, Nacir
|
|
|
40 |
3 |
p. 523-526
|
artikel
|
| 75 |
Transport properties and observation of quantum Hall effects of InAs0.1Sb0.9 thin layers sandwiched between Al0.1In0.9Sb layers
|
Shibasaki, Ichiro
|
|
|
40 |
3 |
p. 592-594
|
artikel
|
| 76 |
(Zn, Mg)O/ZnO-based heterostructures grown by molecular beam epitaxy on sapphire: Polar vs. non-polar
|
Chauveau, J.-M.
|
|
|
40 |
3 |
p. 512-516
|
artikel
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