| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A CMOS piecewise curvature-compensated voltage reference
|
Xinquan, Lai
|
|
|
40 |
1 |
p. 39-45
|
artikel
|
| 2 |
Adaptive CMOS analog circuits for 4G mobile terminals—Review and state-of-the-art survey
|
de la Rosa, José M.
|
|
|
40 |
1 |
p. 156-176
|
artikel
|
| 3 |
Al contacts to nanoroughened p-GaN
|
Kim, Hogyoung
|
|
|
40 |
1 |
p. 35-38
|
artikel
|
| 4 |
Al x Ga1− x N/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures
|
Asgari, A.
|
|
|
40 |
1 |
p. 104-107
|
artikel
|
| 5 |
A novel Alienor-based heuristic for the optimal design of analog circuits
|
Fakhfakh, Mourad
|
|
|
40 |
1 |
p. 141-148
|
artikel
|
| 6 |
A novel low-voltage low-power fully differential voltage and current gained CCII for floating impedance simulations
|
De Marcellis, Andrea
|
|
|
40 |
1 |
p. 20-25
|
artikel
|
| 7 |
An wide-range tunable on-chip radio-frequency LC-tank formed with a post-CMOS-compatible MEMS fabrication technique
|
Gu, Lei
|
|
|
40 |
1 |
p. 131-136
|
artikel
|
| 8 |
Application of a combined methodology for extraction of the electrical model of a lead frame chip-scale package
|
Mc Gibney, Eoin
|
|
|
40 |
1 |
p. 185-192
|
artikel
|
| 9 |
A simple analytical model of thin films crystalline silicon solar cell with quasi-monocrystalline porous silicon at the backside
|
Krichen, Monem
|
|
|
40 |
1 |
p. 120-125
|
artikel
|
| 10 |
Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modeling
|
Mahamdi, R.
|
|
|
40 |
1 |
p. 1-4
|
artikel
|
| 11 |
Carbon nanotube tips for surface characterization: Fabrication and properties
|
Su, Chien-Chan
|
|
|
40 |
1 |
p. 46-49
|
artikel
|
| 12 |
Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory
|
Gerstenmaier, Y.C.
|
|
|
40 |
1 |
p. 26-34
|
artikel
|
| 13 |
Damping vibration of scanning near-field optical microscope probe using the Timoshenko beam model
|
Chen, Terry Yuan-Fang
|
|
|
40 |
1 |
p. 53-57
|
artikel
|
| 14 |
Design and fabrication of silicon-based 8×8 MEMS optical switch array
|
Jia, Cuiping
|
|
|
40 |
1 |
p. 83-86
|
artikel
|
| 15 |
Design, fabrication and characterization of pyroelectric thin film and its application for infrared gas sensors
|
Qiu-lin, Tan
|
|
|
40 |
1 |
p. 58-62
|
artikel
|
| 16 |
Editorial board
|
|
|
|
40 |
1 |
p. i
|
artikel
|
| 17 |
Effect of type-II quantum well of m-MTDATA/α-NPD on the performance of green organic light-emitting diodes
|
Yang, Jungjin
|
|
|
40 |
1 |
p. 63-65
|
artikel
|
| 18 |
Grain size effect of nanocrystalline ZnO on characteristics of dye-sensitized solar cells
|
Chu, Tung-Te
|
|
|
40 |
1 |
p. 50-52
|
artikel
|
| 19 |
Growth of B x Ga1− x As, B x Al1− x As and B x Ga1− x − y In yAs epilayers on (001)GaAs by low pressure metalorganic chemical vapor deposition
|
Wang, Qi
|
|
|
40 |
1 |
p. 87-91
|
artikel
|
| 20 |
Impact of gate-oxide tunneling on mixed-signal design and simulation of a nano-CMOS VCO
|
Kougianos, Elias
|
|
|
40 |
1 |
p. 95-103
|
artikel
|
| 21 |
Improving the emission characteristics of a carbon nanotube film in NaCl electrolyte
|
Zou, Rujia
|
|
|
40 |
1 |
p. 115-119
|
artikel
|
| 22 |
Investigation on LIGA-like process based on multilevel imprint lithography
|
Wang, Quandai
|
|
|
40 |
1 |
p. 149-155
|
artikel
|
| 23 |
Low power impedance measurement integrated circuit for sensor applications
|
Sacristán-Riquelme, Jordi
|
|
|
40 |
1 |
p. 177-184
|
artikel
|
| 24 |
Low sensitivity to temperature compressive-strained structure quantum well laser Ga1− x In x As1− y N y /GaAs
|
Aissat, A.
|
|
|
40 |
1 |
p. 10-14
|
artikel
|
| 25 |
Low-temperature deposition of silicon oxide and silicon nitride by reactive magnetron sputtering
|
da Silva Zambom, Luís
|
|
|
40 |
1 |
p. 66-69
|
artikel
|
| 26 |
Measurement of second-order nonlinear optical susceptibility of cBN crystal synthesized at high pressure and high temperature
|
Cao, Kun
|
|
|
40 |
1 |
p. 70-73
|
artikel
|
| 27 |
MEMS inclinometer based on a novel piezoresistor structure
|
Tang, Lijun
|
|
|
40 |
1 |
p. 78-82
|
artikel
|
| 28 |
Metal-free indoline-dye-sensitized TiO2 nanotube solar cells
|
Li, X.D.
|
|
|
40 |
1 |
p. 108-114
|
artikel
|
| 29 |
Modeling of ionizing radiation effect on optoelectronic-integrated devices (OEIDs)
|
Eladl, Sh. M.
|
|
|
40 |
1 |
p. 193-196
|
artikel
|
| 30 |
New implementation of high linear LNA using derivative superposition method
|
Han, Shuguang
|
|
|
40 |
1 |
p. 197-201
|
artikel
|
| 31 |
Novel attributes in scaling issues of carbon nanotube field-effect transistors
|
Arefinia, Zahra
|
|
|
40 |
1 |
p. 5-9
|
artikel
|
| 32 |
Structural and optical properties of the polycrystalline ZnO films synthesized via oxidative annealing of ZnSe/YSZ heterostructures
|
Maksimov, O.
|
|
|
40 |
1 |
p. 74-77
|
artikel
|
| 33 |
The effect of size on photodiode pinch-off voltage for small pixel CMOS image sensors
|
Park, Sangsik
|
|
|
40 |
1 |
p. 137-140
|
artikel
|
| 34 |
The influence of the AlN film texture on the wet chemical etching
|
Chen, Da
|
|
|
40 |
1 |
p. 15-19
|
artikel
|
| 35 |
Two new low-power Full Adders based on majority-not gates
|
Navi, Keivan
|
|
|
40 |
1 |
p. 126-130
|
artikel
|
| 36 |
Using different work function nanocrystal materials to improve the retention characteristics of nonvolatile memory devices
|
Li, Yingtao
|
|
|
40 |
1 |
p. 92-94
|
artikel
|
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