| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analog switch device using a MOS structure
|
Juárez, H.
|
|
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39 |
3-4 |
p. 651-655
|
artikel
|
| 2 |
A new type of structural defects in CdZnSe/ZnSe heterostructures
|
Borkovska, L.
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39 |
3-4 |
p. 589-593
|
artikel
|
| 3 |
Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration
|
Brehm, M.
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39 |
3-4 |
p. 485-488
|
artikel
|
| 4 |
Bipolar transistor with quantum well base
|
Mil'shtein, S.
|
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39 |
3-4 |
p. 631-634
|
artikel
|
| 5 |
Building semiconductor nanostructures atom by atom
|
Korkusinski, M.
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39 |
3-4 |
p. 318-326
|
artikel
|
| 6 |
Capacitance: A property of nanoscale materials based on spatial symmetry of discrete electrons
|
LaFave Jr., Tim
|
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39 |
3-4 |
p. 617-623
|
artikel
|
| 7 |
Characteristics and fabrication of nanohole array on InP semiconductor substrate using nanoporous alumina
|
Jung, Mi
|
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39 |
3-4 |
p. 526-528
|
artikel
|
| 8 |
Characterizing total correlations in multipartite systems
|
Paz-Silva, Gerardo A.
|
|
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39 |
3-4 |
p. 699-701
|
artikel
|
| 9 |
Chirp compression with single chirped mirrors and its assembly
|
Yakushev, S.O.
|
|
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39 |
3-4 |
p. 690-695
|
artikel
|
| 10 |
Comparative investigation of optical and structural properties of porous SiC
|
Rodriguez, M.M.
|
|
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39 |
3-4 |
p. 494-498
|
artikel
|
| 11 |
Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LP ij modes
|
Piskorski, Łukasz
|
|
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39 |
3-4 |
p. 638-640
|
artikel
|
| 12 |
Dependence of the photoluminescence energy and carrier lifetime of the carrier density in nitride quantum well
|
López, M.R.
|
|
|
39 |
3-4 |
p. 447-449
|
artikel
|
| 13 |
Depression of the superconducting critical temperature and finite-size scaling relation in YBa2Cu3O7− δ /La2/3Ca1/3MnO3 bilayers
|
Morán, O.
|
|
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39 |
3-4 |
p. 556-559
|
artikel
|
| 14 |
Dielectric function analysis of ZnSe and CdSe using parametric semiconductor model
|
Jung, Y.W.
|
|
|
39 |
3-4 |
p. 570-572
|
artikel
|
| 15 |
Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields
|
Oliveira, L.E.
|
|
|
39 |
3-4 |
p. 398-401
|
artikel
|
| 16 |
Editorial Board
|
|
|
|
39 |
3-4 |
p. iii
|
artikel
|
| 17 |
Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics
|
Kryshtab, T.
|
|
|
39 |
3-4 |
p. 418-422
|
artikel
|
| 18 |
Effect of eccentricity and boundary conditions on the edge superconducting states in mesoscopic rings
|
Moncada, E.
|
|
|
39 |
3-4 |
p. 459-462
|
artikel
|
| 19 |
Effect of Fe doping on structural and magnetic properties of La2/3Ca1/3Mn1− y Fe y O3 (y=0–0.03) thin films
|
Arnache, O.
|
|
|
39 |
3-4 |
p. 544-547
|
artikel
|
| 20 |
Effect of the Dresselhaus spin splitting on the effective Landé g-factor in GaAs–(Ga,Al)As quantum wells under in-plane or growth-direction magnetic fields
|
Porras-Monenegro, N.
|
|
|
39 |
3-4 |
p. 390-393
|
artikel
|
| 21 |
Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots
|
Holtz, P.O.
|
|
|
39 |
3-4 |
p. 331-334
|
artikel
|
| 22 |
Effects of geometry, applied hydrostatic pressure and magnetic field on the electron–hole transition energy in a GaAs–Ga1− x Al x As pillbox immersed in a system of Ga1− y Al y As
|
Ramos-Arteaga, S.M.
|
|
|
39 |
3-4 |
p. 450-454
|
artikel
|
| 23 |
Effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in GaAs / Ga 1 - x Al x As quantum wells
|
Tangarife, E.
|
|
|
39 |
3-4 |
p. 431-434
|
artikel
|
| 24 |
Electron dynamics in superlattices subject to crossed magnetic and electric fields
|
Orlita, M.
|
|
|
39 |
3-4 |
p. 628-630
|
artikel
|
| 25 |
Electron ensemble coherence and terahertz radiation amplification in a cascade superlattice structure
|
Demarina, N.V.
|
|
|
39 |
3-4 |
p. 624-627
|
artikel
|
| 26 |
Electronic and optical properties of ordered porous germanium
|
Guzmán, David
|
|
|
39 |
3-4 |
p. 523-525
|
artikel
|
| 27 |
Electronic and thermal transport in hot carrier solar cells with low-dimensional contacts
|
O’Dwyer, M.F.
|
|
|
39 |
3-4 |
p. 656-659
|
artikel
|
| 28 |
Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling
|
Smrčka, L.
|
|
|
39 |
3-4 |
p. 411-413
|
artikel
|
| 29 |
Electron pumping through quantum dots defined in parallel etched quantum wires
|
Blumenthal, M.D.
|
|
|
39 |
3-4 |
p. 365-368
|
artikel
|
| 30 |
Energy spectrum in a concentric double quantum ring of GaAs–(Ga,Al)As under applied magnetic fields
|
Culchac, F.J.
|
|
|
39 |
3-4 |
p. 402-406
|
artikel
|
| 31 |
Energy states in GaAs delta-doped field effect transistors under hydrostatic pressure
|
Martínez-Orozco, J.C.
|
|
|
39 |
3-4 |
p. 648-650
|
artikel
|
| 32 |
Etched quantum dots for all-optical and electro-optical switches
|
Bickel, Nathan
|
|
|
39 |
3-4 |
p. 362-364
|
artikel
|
| 33 |
Exciton diamagnetic shift in GaAs / Ga 1 - x Al x As quantum wells under in-plane magnetic fields
|
Duque, C.A.
|
|
|
39 |
3-4 |
p. 407-410
|
artikel
|
| 34 |
Excitonic dynamics of a quantum dot coupled to a laser-driven semiconductor microcavity
|
Pretel, Alberto
|
|
|
39 |
3-4 |
p. 682-684
|
artikel
|
| 35 |
Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer
|
García Salgado, G.
|
|
|
39 |
3-4 |
p. 489-493
|
artikel
|
| 36 |
Formation and characterization of surface metal nanostructures with tunable optical properties
|
Ovchinnikov, V.
|
|
|
39 |
3-4 |
p. 664-668
|
artikel
|
| 37 |
Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy
|
Novikov, S.
|
|
|
39 |
3-4 |
p. 518-522
|
artikel
|
| 38 |
Highly circular-polarized single photon generation from a single quantum dot at zero magnetic field
|
Kobayashi, H.
|
|
|
39 |
3-4 |
p. 327-330
|
artikel
|
| 39 |
Impurity states in a spherical GaAs–Ga 1 - x Al x As quantum dots: Effects of hydrostatic pressure
|
Perez-Merchancano, S.T.
|
|
|
39 |
3-4 |
p. 383-386
|
artikel
|
| 40 |
Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double δ -doped GaAs quantum wells
|
Rodriguez-Vargas, I.
|
|
|
39 |
3-4 |
p. 438-441
|
artikel
|
| 41 |
Influence of Zr concentration on crystalline structure and its electronic properties in the new Zr x Al 1 - x N compound in wurtzite phase: An ab initio study
|
Elizabeth Escorcia–Salas, G.
|
|
|
39 |
3-4 |
p. 579-581
|
artikel
|
| 42 |
Integrated InGaAsP MQW Mach–Zehnder modulator
|
May-Arrioja, D.A.
|
|
|
39 |
3-4 |
p. 660-663
|
artikel
|
| 43 |
Kinematic study of refraction properties of an opal-based photonic crystal
|
Salcedo-Reyes, J.C.
|
|
|
39 |
3-4 |
p. 427-430
|
artikel
|
| 44 |
Lateral Fano resonance and Kondo effect in the strong coupling regime of a quantum dot embedded in a quantum wire
|
Valenzuela, Y.
|
|
|
39 |
3-4 |
p. 387-389
|
artikel
|
| 45 |
Linear conductance through parallel coupled quantum dots
|
Franco, R.
|
|
|
39 |
3-4 |
p. 354-358
|
artikel
|
| 46 |
Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors
|
Rupani, R.A.
|
|
|
39 |
3-4 |
p. 307-313
|
artikel
|
| 47 |
Low temperature SnO2 films deposited by APCVD
|
Morales, C.
|
|
|
39 |
3-4 |
p. 586-588
|
artikel
|
| 48 |
Magnetoexciton states and diamagnetic shifts in GaAs - Ga 1 - x Al x As quantum dots/ultrathin quantum wells under growth-direction magnetic fields
|
Barticevic, Z.
|
|
|
39 |
3-4 |
p. 348-350
|
artikel
|
| 49 |
Magnetopolaron effects on the donor states in InP
|
Osório, F.A.P.
|
|
|
39 |
3-4 |
p. 573-575
|
artikel
|
| 50 |
Mean lifetimes of quasi-bound electronic states in rectangular GaAs/AlGaAs barriers
|
Pichardo, X.A.
|
|
|
39 |
3-4 |
p. 414-417
|
artikel
|
| 51 |
Miniband properties of superlattice quantum dot arrays fabricated by the edge-defined nanowires
|
Yi, Jong Chang
|
|
|
39 |
3-4 |
p. 369-374
|
artikel
|
| 52 |
Miniband structure of parabolic GaAs / Al x Ga 1 - x As superlattices
|
Rodriguez-Vargas, I.
|
|
|
39 |
3-4 |
p. 423-426
|
artikel
|
| 53 |
Nanostructures for nanoelectronics: No potential for room temperature applications?
|
Geller, M.
|
|
|
39 |
3-4 |
p. 302-306
|
artikel
|
| 54 |
Non-delta-function electronic spectral densities in individual quantum dots
|
Král, Karel
|
|
|
39 |
3-4 |
p. 375-377
|
artikel
|
| 55 |
[No title]
|
Henini, Mohamed
|
|
|
39 |
3-4 |
p. 301
|
artikel
|
| 56 |
On way to ideal quantum dots
|
Elyukhin, V.A.
|
|
|
39 |
3-4 |
p. 351-353
|
artikel
|
| 57 |
Optical transitions in new trends organic materials
|
Pérez-Merchancano, S.T.
|
|
|
39 |
3-4 |
p. 576-578
|
artikel
|
| 58 |
Optoelectronic study in porous silicon thin films
|
Torres, J.
|
|
|
39 |
3-4 |
p. 482-484
|
artikel
|
| 59 |
Path integral approach to dissipation in solid-state qubits
|
Reina, John H.
|
|
|
39 |
3-4 |
p. 696-698
|
artikel
|
| 60 |
Photonic density of states maps for design of photonic crystal devices
|
Sukhoivanov, I.A.
|
|
|
39 |
3-4 |
p. 685-689
|
artikel
|
| 61 |
Polaron effects on the energy of a hydrogenic donor impurity in GaAs–(Ga,Al)As quantum-well wires
|
Villamil, Pablo
|
|
|
39 |
3-4 |
p. 466-471
|
artikel
|
| 62 |
Polaronic effects on the collective excitation energies in a quantum wire
|
Machado, P.C.M.
|
|
|
39 |
3-4 |
p. 463-465
|
artikel
|
| 63 |
Porous SiC layers on Si nanowire surface
|
Diaz Cano, A.I.
|
|
|
39 |
3-4 |
p. 507-511
|
artikel
|
| 64 |
Porous silicon optical cavity structure applied to high sensitivity organic solvent sensor
|
Huanca, Danilo R.
|
|
|
39 |
3-4 |
p. 499-506
|
artikel
|
| 65 |
Preparation of vertically aligned bundles of Mo6S9− x I x (4.5
|
Rangus, M.
|
|
|
39 |
3-4 |
p. 475-477
|
artikel
|
| 66 |
Progress of quantum electronics and the future of wireless technologies
|
Mil'shtein, Samson
|
|
|
39 |
3-4 |
p. 669-673
|
artikel
|
| 67 |
Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers
|
Jelev-Vlaev, S.
|
|
|
39 |
3-4 |
p. 442-446
|
artikel
|
| 68 |
Realization of a GaAs/AlGaAs-based quantum cellular automata cell
|
Perez-Martinez, F.
|
|
|
39 |
3-4 |
p. 674-677
|
artikel
|
| 69 |
Reconfigurable 1×4InP-based optical switch
|
May-Arrioja, D.A.
|
|
|
39 |
3-4 |
p. 644-647
|
artikel
|
| 70 |
Resonant tunneling in graphene microstructures
|
Milton Pereira Jr., J.
|
|
|
39 |
3-4 |
p. 534-536
|
artikel
|
| 71 |
Revisiting tunneling via Si-quantum dots
|
Tsu, R.
|
|
|
39 |
3-4 |
p. 335-343
|
artikel
|
| 72 |
Role of Cooper pairs for the generation of entangled photon pairs from single quantum dots
|
Suemune, I.
|
|
|
39 |
3-4 |
p. 344-347
|
artikel
|
| 73 |
Self-diffusion slowdown in liquid indium and gallium metals under nanoconfinement
|
Lee, Min Kai
|
|
|
39 |
3-4 |
p. 566-569
|
artikel
|
| 74 |
Semiconductor terahertz detectors and absorption enhancement using plasmons
|
Perera, A.G.U.
|
|
|
39 |
3-4 |
p. 601-606
|
artikel
|
| 75 |
Shaping electron field emission by ultrathin multilayered structure cathodes
|
Semet, V.
|
|
|
39 |
3-4 |
p. 607-616
|
artikel
|
| 76 |
Silicon in functional epitaxial oxides: A new group of nanostructures
|
Fissel, A.
|
|
|
39 |
3-4 |
p. 512-517
|
artikel
|
| 77 |
Single electron transport in a free-standing quantum dot
|
Chorley, S.J.
|
|
|
39 |
3-4 |
p. 314-317
|
artikel
|
| 78 |
Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers
|
Alfaro-Martínez, Adrián
|
|
|
39 |
3-4 |
p. 594-596
|
artikel
|
| 79 |
Spin effect on the resonant tunneling characteristics of a double-barrier heterostructures under longitudinal stresses
|
Paredes Gutiérrez, H.
|
|
|
39 |
3-4 |
p. 635-637
|
artikel
|
| 80 |
Spin polarization in ordered and disordered double-perovskites
|
Aguilar, B.
|
|
|
39 |
3-4 |
p. 560-562
|
artikel
|
| 81 |
Study of the electronic fundamental transition of zincblende InN/InGaN quantum wells
|
Contreras-Solorio, D.A.
|
|
|
39 |
3-4 |
p. 435-437
|
artikel
|
| 82 |
Study of the recombination around the excitonic region of MBE ZnSe:Cl thin films
|
Martínez-Cantón, A.E.
|
|
|
39 |
3-4 |
p. 582-585
|
artikel
|
| 83 |
Synthesis and photoluminescence of Y2O3:Yb3+–Er3+ nanofibers
|
Martínez, A.
|
|
|
39 |
3-4 |
p. 551-555
|
artikel
|
| 84 |
Synthesis, characterization and spectroscopy of carbon based nanoscale materials
|
Segura, R.
|
|
|
39 |
3-4 |
p. 529-533
|
artikel
|
| 85 |
Tb 0.5 Bi 0.5 MnO 3 : New material. A DFT study
|
Grizalez, Miguel
|
|
|
39 |
3-4 |
p. 563-565
|
artikel
|
| 86 |
The effect of complex and negative indices in the transmission of electromagnetic waves through superlattices
|
Pereyra, P.
|
|
|
39 |
3-4 |
p. 394-397
|
artikel
|
| 87 |
Thermionic refrigeration in low-dimensional structures
|
O’Dwyer, M.F.
|
|
|
39 |
3-4 |
p. 597-600
|
artikel
|
| 88 |
Thermoelectric power factor of LSCoO compounds
|
Moreno, L.C.
|
|
|
39 |
3-4 |
p. 548-550
|
artikel
|
| 89 |
The role of surface roughness on the electron confinement in semiconductor quantum rings
|
Chaves, A.
|
|
|
39 |
3-4 |
p. 455-458
|
artikel
|
| 90 |
Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs
|
Gutowski, Krzysztof
|
|
|
39 |
3-4 |
p. 641-643
|
artikel
|
| 91 |
Transport properties of graphene nanoribbon heterostructures
|
Rosales, L.
|
|
|
39 |
3-4 |
p. 537-540
|
artikel
|
| 92 |
Tuning of the optical properties of [11k] grown InAs quantum dots by the capping layer
|
Mlinar, V.
|
|
|
39 |
3-4 |
p. 359-361
|
artikel
|
| 93 |
Ultra flexible SiGe/Si/Cr nanosprings
|
Grützmacher, D.
|
|
|
39 |
3-4 |
p. 478-481
|
artikel
|
| 94 |
Vacuum UV spectroscopic ellipsometry study on Ga 1 - x Cr x N ( 0 ⩽ x ⩽ 0.1 ) alloy films
|
Ghong, T.H.
|
|
|
39 |
3-4 |
p. 541-543
|
artikel
|
| 95 |
Vertically coupled quantum dots charged by exciton
|
Mikhailov, I.D.
|
|
|
39 |
3-4 |
p. 378-382
|
artikel
|
| 96 |
Very shallow boron junctions in Si by implantation and SOD diffusion obtained by RTP
|
Plaza Castillo, J.
|
|
|
39 |
3-4 |
p. 678-681
|
artikel
|
| 97 |
Vibrational states in low-dimensional structures: An application to silicon quantum wires
|
Alfaro, Pedro
|
|
|
39 |
3-4 |
p. 472-474
|
artikel
|
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