| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact C–V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications
|
Gangwani, Parvesh
|
|
|
38 |
8-9 |
p. 848-854
|
artikel
|
| 2 |
A model for the resonant tunneling semiconductor-controlled rectifier
|
Barkana, B.D.
|
|
|
38 |
8-9 |
p. 871-876
|
artikel
|
| 3 |
A monolithic buck DC–DC converter with on-chip PWM circuit
|
Lin, Yeong-Tsair
|
|
|
38 |
8-9 |
p. 923-930
|
artikel
|
| 4 |
An analytical two-dimensional model for AlGaN/GaN HEMT with polarization effects for high power applications
|
Tyagi, Rajesh K.
|
|
|
38 |
8-9 |
p. 877-883
|
artikel
|
| 5 |
A new SIMPLORER model for single-electron transistors
|
Boubaker, A.
|
|
|
38 |
8-9 |
p. 894-899
|
artikel
|
| 6 |
An ultra-high level second-order nonlinear optical susceptibility in strained asymmetric GaN–AlGaN–AlN quantum wells: Towards all-optical devices and systems
|
Rostami, A.
|
|
|
38 |
8-9 |
p. 900-904
|
artikel
|
| 7 |
A systematic dry etching process for profile control of quantum dots and nanoconstrictions
|
Sutikno, Madnarski
|
|
|
38 |
8-9 |
p. 823-827
|
artikel
|
| 8 |
Characteristics of high Al content Al x Ga1− x N grown by metalorganic chemical vapor deposition
|
Wang, Xiaoyan
|
|
|
38 |
8-9 |
p. 838-841
|
artikel
|
| 9 |
Characteristics of SiCN microstructures for harsh environment and high-power MEMS applications
|
Chung, Gwiy-Sang
|
|
|
38 |
8-9 |
p. 888-893
|
artikel
|
| 10 |
Editorial Board
|
|
|
|
38 |
8-9 |
p. i
|
artikel
|
| 11 |
Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices
|
Mukhopadhyay, Saibal
|
|
|
38 |
8-9 |
p. 931-941
|
artikel
|
| 12 |
Evaluation, prediction and reduction of routing congestion
|
Saeedi, Mehdi
|
|
|
38 |
8-9 |
p. 942-958
|
artikel
|
| 13 |
Fabrication and effect of the dielectric permittivity on the ideality factor of MEH-PPV Schottky diodes doped with electron acceptor fluorescent dyes
|
Ahmed, Fatima E.
|
|
|
38 |
8-9 |
p. 834-837
|
artikel
|
| 14 |
Features of a tunnel diode oscillator at different temperatures
|
Al-Harthi, S.
|
|
|
38 |
8-9 |
p. 817-822
|
artikel
|
| 15 |
Fractal analysis of InGaN self-assemble quantum dots grown by MOCVD
|
Lam, K.T.
|
|
|
38 |
8-9 |
p. 905-909
|
artikel
|
| 16 |
Influence of the composition fluctuation and the disorder on the bowing band gap in semiconductor materials
|
Ben Fredj, A.
|
|
|
38 |
8-9 |
p. 860-870
|
artikel
|
| 17 |
Investigation of Zr–N thin films for use as diffusion barrier in Cu metallization
|
Wang, Ying
|
|
|
38 |
8-9 |
p. 910-914
|
artikel
|
| 18 |
Iterative optimization of tail breaking force of 1mil wire thermosonic ball bonding processes and the influence of plasma cleaning
|
Lee, J.
|
|
|
38 |
8-9 |
p. 842-847
|
artikel
|
| 19 |
Organic thin film transistors with double insulator layers
|
Liu, X.
|
|
|
38 |
8-9 |
p. 919-922
|
artikel
|
| 20 |
Simulation and fabrication of HF microelectromechanical bandpass filter
|
Dai, Ching-Liang
|
|
|
38 |
8-9 |
p. 828-833
|
artikel
|
| 21 |
Surface micromachined RF MEMS variable capacitor
|
Fang, Dong-Ming
|
|
|
38 |
8-9 |
p. 855-859
|
artikel
|
| 22 |
The influence of nitrogen and fluorine on the dielectric constant of hydrogenated amorphous carbon (a-C:H) films
|
Guerino, M.
|
|
|
38 |
8-9 |
p. 915-918
|
artikel
|
| 23 |
X-ray diffraction studies of electrostatic sprayed SnO2:F films
|
Zaouk, D.
|
|
|
38 |
8-9 |
p. 884-887
|
artikel
|
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