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                             29 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A chalcogenide-based device with potential for multi-state storage Yin, You

38 6-7 p. 695-699
artikel
2 An 80MHz PLL with 72.7ps peak-to-peak jitter Wang, Chua-Chin

38 6-7 p. 716-721
artikel
3 A p+/p-buffer/n-epi cmos compatible high-side RESURF LDMOS transistor for Power IC applications Holland, P.

38 6-7 p. 762-766
artikel
4 Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET Alwan, M.

38 6-7 p. 727-734
artikel
5 Challenges and performance limitations of high-k and oxynitride gate dielectrics for 90/65nm CMOS technology Tan, S.Y.

38 6-7 p. 783-786
artikel
6 Characteristics of a micromachined piezovalve combined with a multilayer ceramic actuator Chung, Gwiy-Sang

38 6-7 p. 690-694
artikel
7 Characteristics of quadratic electro-optic effects and electro-absorption process in CdSe parabolic quantum dots Xie, Shufei

38 6-7 p. 787-790
artikel
8 Degradation analysis in asymmetric sampled grating distributed feedback laser diodes Joo, Han Sung

38 6-7 p. 740-745
artikel
9 Editorial board
38 6-7 p. i
artikel
10 Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells Shuti, Li

38 6-7 p. 767-770
artikel
11 Electrical characterization of solid-state heterojunctions between PEDOT:PSS and an anionic polyelectrolyte Arena, A.

38 6-7 p. 678-681
artikel
12 Generic discrete–continuous simulation model for accurate validation in heterogeneous systems design Bouchhima, Faouzi

38 6-7 p. 805-815
artikel
13 Highly efficient green top-emitting organic light-emitting devices with metal electrode structure Wu, Zhijun

38 6-7 p. 686-689
artikel
14 Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot Xia, Congxin

38 6-7 p. 663-666
artikel
15 Interaction of CdSe/ZnS quantum dots: Among themselves and with matrices Liu, K.

38 6-7 p. 700-705
artikel
16 Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O2 ambient Chen, Changchun

38 6-7 p. 800-804
artikel
17 Low-temperature process in growing carbon nanotube Chang, Shang-Chou

38 6-7 p. 657-662
artikel
18 Microelectromechanical resonator manufactured using CMOS-MEMS technique Dai, Ching-Liang

38 6-7 p. 672-677
artikel
19 Nanoindentation-induced phase transformation in crystalline silicon and relaxed amorphous silicon Rao, R.

38 6-7 p. 722-726
artikel
20 Periodic structures prepared by two-beam interference method Škriniarová, J.

38 6-7 p. 746-749
artikel
21 Prospective development in diffusion barrier layers for copper metallization in LSI Wong, H.Y.

38 6-7 p. 777-782
artikel
22 Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures Pakhomov, Georgy L.

38 6-7 p. 682-685
artikel
23 Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure Tsai, Jung-Hui

38 6-7 p. 750-753
artikel
24 Spin-coated PMMA films Semaltianos, N.G.

38 6-7 p. 754-761
artikel
25 Study on new structure uncooled a-Si microbolometer for infrared detection Liu, Xing-Ming

38 6-7 p. 735-739
artikel
26 Theoretical analysis and optimization of electromagnetic actuation in a valveless microimpedance pump Chang, Hsien-Tsung

38 6-7 p. 791-799
artikel
27 Thermal properties and thermoelectric microdevices with InN thin films Izaki, Ryohei

38 6-7 p. 667-671
artikel
28 Two-dimensional model of heat flow in broad-area laser diode: Discussion of the upper boundary condition Szymański, Michał

38 6-7 p. 771-776
artikel
29 Using SAT-based techniques in power estimation Sagahyroon, Assim

38 6-7 p. 706-715
artikel
                             29 gevonden resultaten
 
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