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                             29 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A modified model for Si/SiGe MOS-gate delta-doped HEMTs Alam, Mohmmad T.

37 9 p. 938-942
artikel
2 An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability Gupta, Ritesh

37 9 p. 919-929
artikel
3 A new analytical model for optimizing SOI LDMOS with step doped drift region Guo, Yufeng

37 9 p. 861-866
artikel
4 An integrated 0.35μm CMOS optical receiver with clock and data recovery circuit Chen, Yi-Ju

37 9 p. 985-992
artikel
5 An overview of feed-forward design techniques for high-gain wideband operational transconductance amplifiers Thandri, Bharath Kumar

37 9 p. 1018-1029
artikel
6 Bright green organic light-emitting devices having a composite electron transport layer Wang, Fangcong

37 9 p. 916-918
artikel
7 Characterization of QWIP structures prepared on GaAs-patterned substrates Štrichovanec, P.

37 9 p. 888-891
artikel
8 Device preparation and characterization of drain current transients in static induction micro transistors Joseph, C.M.

37 9 p. 884-887
artikel
9 Editorial board
37 9 p. CO2
artikel
10 Effects of substrate temperature on electrical and structural properties of copper thin films Chan, Kah-Yoong

37 9 p. 930-937
artikel
11 Electronic properties of GST for non-volatile memory Lv, Hangbing

37 9 p. 982-984
artikel
12 Experimental method and FE simulation model for evaluation of wafer probing parameters Liu, D.S.

37 9 p. 871-883
artikel
13 Fabrication and performance of a micromachined 3-D solenoid inductor Fang, Dong-Ming

37 9 p. 948-951
artikel
14 Field emission characteristics of an oxidized porous polysilicon field emitter using the electrochemical oxidation process Kwon, Soon-Il

37 9 p. 993-996
artikel
15 GaAs substrate orientation dependence of resonant quasi-level lifetime in 2D–2D InGaAs/GaAs resonant tunneling devices Bouzaïene, L.

37 9 p. 892-896
artikel
16 Generalized Fibonacci quasi photonic crystals and generation of superimposed Bragg Gratings for optical communication Rostami, A.

37 9 p. 897-903
artikel
17 High linearity CMOS mixer for domotic 5GHz WLAN sliding-IF receivers Pifferi, M.

37 9 p. 1012-1017
artikel
18 High-temperature and self-heating effects in fully depleted SOI MOSFETs Goel, A.K.

37 9 p. 963-975
artikel
19 Hot-Probe method for evaluation of impurities concentration in semiconductors Golan, G.

37 9 p. 910-915
artikel
20 Interface electric charge modelling and characterization with δ – distribution generator strings in thin SOI films Ravariu, C.

37 9 p. 943-947
artikel
21 Low-swing current mode logic (LSCML): A new logic style for secure and robust smart cards against power analysis attacks Hassoune, Ilham

37 9 p. 997-1006
artikel
22 Low threshold and tunable all-optical switch using two-photon absorption in array of nonlinear ring resonators coupled to MZI Rostami, A.

37 9 p. 976-981
artikel
23 Power dissipation sources and possible control techniques in ultra deep submicron CMOS technologies Ekekwe, Ndubuisi

37 9 p. 851-860
artikel
24 Q-based design method for T network impedance matching Chung, B.K.

37 9 p. 1007-1011
artikel
25 Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots Wang, Chunxia

37 9 p. 847-850
artikel
26 Quantum size dependent optical nutation in a core-shell CdSe/ZnS quantum dot Gong, Shaohua

37 9 p. 904-909
artikel
27 The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs Camillo, L.M.

37 9 p. 952-957
artikel
28 Titanium nitride electrodes for micro-gap discharge Hsieh, Chung-Fon

37 9 p. 867-870
artikel
29 Transport through a quantum-dot-ring with one dot connected to two electron reservoirs Li, Hua

37 9 p. 958-962
artikel
                             29 gevonden resultaten
 
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