| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A modified model for Si/SiGe MOS-gate delta-doped HEMTs
|
Alam, Mohmmad T.
|
|
|
37 |
9 |
p. 938-942
|
artikel
|
| 2 |
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability
|
Gupta, Ritesh
|
|
|
37 |
9 |
p. 919-929
|
artikel
|
| 3 |
A new analytical model for optimizing SOI LDMOS with step doped drift region
|
Guo, Yufeng
|
|
|
37 |
9 |
p. 861-866
|
artikel
|
| 4 |
An integrated 0.35μm CMOS optical receiver with clock and data recovery circuit
|
Chen, Yi-Ju
|
|
|
37 |
9 |
p. 985-992
|
artikel
|
| 5 |
An overview of feed-forward design techniques for high-gain wideband operational transconductance amplifiers
|
Thandri, Bharath Kumar
|
|
|
37 |
9 |
p. 1018-1029
|
artikel
|
| 6 |
Bright green organic light-emitting devices having a composite electron transport layer
|
Wang, Fangcong
|
|
|
37 |
9 |
p. 916-918
|
artikel
|
| 7 |
Characterization of QWIP structures prepared on GaAs-patterned substrates
|
Štrichovanec, P.
|
|
|
37 |
9 |
p. 888-891
|
artikel
|
| 8 |
Device preparation and characterization of drain current transients in static induction micro transistors
|
Joseph, C.M.
|
|
|
37 |
9 |
p. 884-887
|
artikel
|
| 9 |
Editorial board
|
|
|
|
37 |
9 |
p. CO2
|
artikel
|
| 10 |
Effects of substrate temperature on electrical and structural properties of copper thin films
|
Chan, Kah-Yoong
|
|
|
37 |
9 |
p. 930-937
|
artikel
|
| 11 |
Electronic properties of GST for non-volatile memory
|
Lv, Hangbing
|
|
|
37 |
9 |
p. 982-984
|
artikel
|
| 12 |
Experimental method and FE simulation model for evaluation of wafer probing parameters
|
Liu, D.S.
|
|
|
37 |
9 |
p. 871-883
|
artikel
|
| 13 |
Fabrication and performance of a micromachined 3-D solenoid inductor
|
Fang, Dong-Ming
|
|
|
37 |
9 |
p. 948-951
|
artikel
|
| 14 |
Field emission characteristics of an oxidized porous polysilicon field emitter using the electrochemical oxidation process
|
Kwon, Soon-Il
|
|
|
37 |
9 |
p. 993-996
|
artikel
|
| 15 |
GaAs substrate orientation dependence of resonant quasi-level lifetime in 2D–2D InGaAs/GaAs resonant tunneling devices
|
Bouzaïene, L.
|
|
|
37 |
9 |
p. 892-896
|
artikel
|
| 16 |
Generalized Fibonacci quasi photonic crystals and generation of superimposed Bragg Gratings for optical communication
|
Rostami, A.
|
|
|
37 |
9 |
p. 897-903
|
artikel
|
| 17 |
High linearity CMOS mixer for domotic 5GHz WLAN sliding-IF receivers
|
Pifferi, M.
|
|
|
37 |
9 |
p. 1012-1017
|
artikel
|
| 18 |
High-temperature and self-heating effects in fully depleted SOI MOSFETs
|
Goel, A.K.
|
|
|
37 |
9 |
p. 963-975
|
artikel
|
| 19 |
Hot-Probe method for evaluation of impurities concentration in semiconductors
|
Golan, G.
|
|
|
37 |
9 |
p. 910-915
|
artikel
|
| 20 |
Interface electric charge modelling and characterization with δ – distribution generator strings in thin SOI films
|
Ravariu, C.
|
|
|
37 |
9 |
p. 943-947
|
artikel
|
| 21 |
Low-swing current mode logic (LSCML): A new logic style for secure and robust smart cards against power analysis attacks
|
Hassoune, Ilham
|
|
|
37 |
9 |
p. 997-1006
|
artikel
|
| 22 |
Low threshold and tunable all-optical switch using two-photon absorption in array of nonlinear ring resonators coupled to MZI
|
Rostami, A.
|
|
|
37 |
9 |
p. 976-981
|
artikel
|
| 23 |
Power dissipation sources and possible control techniques in ultra deep submicron CMOS technologies
|
Ekekwe, Ndubuisi
|
|
|
37 |
9 |
p. 851-860
|
artikel
|
| 24 |
Q-based design method for T network impedance matching
|
Chung, B.K.
|
|
|
37 |
9 |
p. 1007-1011
|
artikel
|
| 25 |
Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots
|
Wang, Chunxia
|
|
|
37 |
9 |
p. 847-850
|
artikel
|
| 26 |
Quantum size dependent optical nutation in a core-shell CdSe/ZnS quantum dot
|
Gong, Shaohua
|
|
|
37 |
9 |
p. 904-909
|
artikel
|
| 27 |
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs
|
Camillo, L.M.
|
|
|
37 |
9 |
p. 952-957
|
artikel
|
| 28 |
Titanium nitride electrodes for micro-gap discharge
|
Hsieh, Chung-Fon
|
|
|
37 |
9 |
p. 867-870
|
artikel
|
| 29 |
Transport through a quantum-dot-ring with one dot connected to two electron reservoirs
|
Li, Hua
|
|
|
37 |
9 |
p. 958-962
|
artikel
|
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