| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaN/GaN self-aligned MODFET with metal oxide gate for millimeter wave application
|
Huq, Hasina F.
|
|
|
37 |
7 |
p. 579-582
|
artikel
|
| 2 |
Alloy splitting of Te-DX in Al x Ga1−x As analysis using the deep level transient spectroscopy technique
|
Bouzrara, L.
|
|
|
37 |
7 |
p. 586-590
|
artikel
|
| 3 |
A novel double RESURF LDMOS and a versatile JFET device used as internal power supply and current detector for SPIC
|
Chen, Wanjun
|
|
|
37 |
7 |
p. 574-578
|
artikel
|
| 4 |
A review of safe operation area
|
Sun, Zhilin
|
|
|
37 |
7 |
p. 661-667
|
artikel
|
| 5 |
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications
|
Kabra, Sneha
|
|
|
37 |
7 |
p. 620-626
|
artikel
|
| 6 |
Electron mobility in n-doped zinc sulphide
|
Rodrigues, Clóves G.
|
|
|
37 |
7 |
p. 657-660
|
artikel
|
| 7 |
Evaluation of graded-channel SOI MOSFET operation at high temperatures
|
Galeti, Milene
|
|
|
37 |
7 |
p. 601-607
|
artikel
|
| 8 |
Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer
|
Kinder, R.
|
|
|
37 |
7 |
p. 642-645
|
artikel
|
| 9 |
Metallic nanogaps with access windows for liquid based systems
|
Kronholz, Stephan
|
|
|
37 |
7 |
p. 591-594
|
artikel
|
| 10 |
Nanometer range: A new theoretical challenge for microelectronics and optoelectronics
|
Eloy, Jean-François
|
|
|
37 |
7 |
p. 630-634
|
artikel
|
| 11 |
Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT
|
Zhang, Fei
|
|
|
37 |
7 |
p. 569-573
|
artikel
|
| 12 |
On the drain current saturation in short channel MOSFETs
|
Benfdila, A.
|
|
|
37 |
7 |
p. 635-641
|
artikel
|
| 13 |
Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study
|
Hu, Weida
|
|
|
37 |
7 |
p. 613-619
|
artikel
|
| 14 |
Reliability analysis of the fine pitch connection using anisotropic conductive film (ACF)
|
Lin, Chao-Ming
|
|
|
37 |
7 |
p. 565-568
|
artikel
|
| 15 |
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD
|
Ran, Junxue
|
|
|
37 |
7 |
p. 583-585
|
artikel
|
| 16 |
Systematic derivation of explicit design formulae for log-domain: A 3rd-order lowpass example
|
Drakakis, E.M.
|
|
|
37 |
7 |
p. 646-656
|
artikel
|
| 17 |
Temperature dependence of DC characteristics of NpN InP/GaAsSb/InP double heterojunction bipolar transistors: an analytical study
|
Tian, Yuan
|
|
|
37 |
7 |
p. 595-600
|
artikel
|
| 18 |
Thickness dependence of the structural and electrical properties of copper films deposited by dc magnetron sputtering technique
|
Chan, Kah-Yoong
|
|
|
37 |
7 |
p. 608-612
|
artikel
|
| 19 |
Ultra-low power PSK backscatter modulator for UHF and microwave RFID transponders
|
De Vita, G.
|
|
|
37 |
7 |
p. 627-629
|
artikel
|
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