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                             14 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base Ji, In-Hwan

37 3 p. 231-235
artikel
2 A vertical monolithical MOS thyristor bi-directional device Bourennane, A.

37 3 p. 223-230
artikel
3 Compensation and doping effects in heavily helium-radiated silicon for power device applications Siemieniec, R.

37 3 p. 204-212
artikel
4 Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices Kojecký, B.

37 3 p. 269-274
artikel
5 Design concept for wire-bonding reliability improvement by optimizing position in power devices Ishiko, Masayasu

37 3 p. 262-268
artikel
6 Evolution of a CMOS Based Lateral High Voltage Technology Concept Knaipp, M.

37 3 p. 243-248
artikel
7 Fast soft recovery thyristors with axial lifetime profile fabricated using iridium diffusion Černík, M.

37 3 p. 213-216
artikel
8 Integrated IGBT short-circuit protection structure: Design and optimization Caramel, C.

37 3 p. 249-256
artikel
9 Large area recrystallization of thick polysilicon films for low cost partial SOI power devices Bertrand, I.

37 3 p. 257-261
artikel
10 Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage Hazdra, P.

37 3 p. 197-203
artikel
11 OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradient Benda, V.

37 3 p. 217-222
artikel
12 Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes Cappelluti, F.

37 3 p. 190-196
artikel
13 The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices Vobecký, J.

37 3 p. 236-242
artikel
14 The quest for optimum construction and technology of power semiconductor devices Benda, Vitezslav

37 3 p. 189
artikel
                             14 gevonden resultaten
 
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