| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base
|
Ji, In-Hwan
|
|
|
37 |
3 |
p. 231-235
|
article
|
| 2 |
A vertical monolithical MOS thyristor bi-directional device
|
Bourennane, A.
|
|
|
37 |
3 |
p. 223-230
|
article
|
| 3 |
Compensation and doping effects in heavily helium-radiated silicon for power device applications
|
Siemieniec, R.
|
|
|
37 |
3 |
p. 204-212
|
article
|
| 4 |
Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices
|
Kojecký, B.
|
|
|
37 |
3 |
p. 269-274
|
article
|
| 5 |
Design concept for wire-bonding reliability improvement by optimizing position in power devices
|
Ishiko, Masayasu
|
|
|
37 |
3 |
p. 262-268
|
article
|
| 6 |
Evolution of a CMOS Based Lateral High Voltage Technology Concept
|
Knaipp, M.
|
|
|
37 |
3 |
p. 243-248
|
article
|
| 7 |
Fast soft recovery thyristors with axial lifetime profile fabricated using iridium diffusion
|
Černík, M.
|
|
|
37 |
3 |
p. 213-216
|
article
|
| 8 |
Integrated IGBT short-circuit protection structure: Design and optimization
|
Caramel, C.
|
|
|
37 |
3 |
p. 249-256
|
article
|
| 9 |
Large area recrystallization of thick polysilicon films for low cost partial SOI power devices
|
Bertrand, I.
|
|
|
37 |
3 |
p. 257-261
|
article
|
| 10 |
Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage
|
Hazdra, P.
|
|
|
37 |
3 |
p. 197-203
|
article
|
| 11 |
OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradient
|
Benda, V.
|
|
|
37 |
3 |
p. 217-222
|
article
|
| 12 |
Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes
|
Cappelluti, F.
|
|
|
37 |
3 |
p. 190-196
|
article
|
| 13 |
The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices
|
Vobecký, J.
|
|
|
37 |
3 |
p. 236-242
|
article
|
| 14 |
The quest for optimum construction and technology of power semiconductor devices
|
Benda, Vitezslav
|
|
|
37 |
3 |
p. 189
|
article
|
Journal description