Digital Library
Close Browse articles from a journal
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
                                       All articles of the corresponding issues
 
                             120 results found
no title author magazine year volume issue page(s) type
1 Absence of Wannier–Stark ladders in finite superlattices Pereyra, P.

36 3-6 p. 401-403
article
2 AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices Mani, R.G.

36 3-6 p. 366-368
article
3 A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps Sun, G.

36 3-6 p. 183-185
article
4 Acoustical phonon dephasing in GaAs quantum dots Ikeda, K.

36 3-6 p. 247-249
article
5 AlGaAs/InGaAs PHEMT with multiple quantum wire gates Lee, Jhang W.

36 3-6 p. 389-391
article
6 Aluminum oxide tunnel barriers for single electron memory devices Yadavalli, Kameshwar K.

36 3-6 p. 272-276
article
7 Analytical model of micromachining of brittle materials with sharp particles Moktadir, Z.

36 3-6 p. 608-611
article
8 A new type of scanning probe microscope: combination between an electrometer and a THz microscope Kawano, Y.

36 3-6 p. 592-595
article
9 Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field Orlov, M.L.

36 3-6 p. 396-400
article
10 Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe Alfaro-Martínez, Adrián

36 3-6 p. 362-365
article
11 A novel chemical molecular beam deposition method for fabrication of II–VI low dimensional structures Razykov, T.M.

36 3-6 p. 599-600
article
12 Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy Andreev, A.

36 3-6 p. 237-240
article
13 Breakdown of Anderson localization in disordered quantum chains Shima, Hiroyuki

36 3-6 p. 422-424
article
14 Calculation of electronic properties in Al x Ga1−x delta-doped systems Gaggero-Sager, L.M.

36 3-6 p. 416-418
article
15 Catalytic CVD production of carbon nanotubes using ethanol Ortega-Cervantez, G.

36 3-6 p. 495-498
article
16 Charge buildup effects in asymmetric p-type resonant tunneling diodes Galvão Gobato, Y.

36 3-6 p. 356-358
article
17 Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques Prutskij, Tatiana

36 3-6 p. 374-378
article
18 Confinement effect on the intradonor 1s–2p+ transition energies in GaN quantum wells de Almeida, R.B.

36 3-6 p. 431-433
article
19 Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers Ivina, N.L.

36 3-6 p. 338-341
article
20 Crystal size dependence of the persistent phosphorescence in Sr2ZnSi2O7: Eu2+, Dy3+ Wang, Xiao-jun

36 3-6 p. 546-548
article
21 Design and simulation of a GaN/AlGaN quantum cascade laser for terahertz emission Sun, G.

36 3-6 p. 450-452
article
22 Design of beam splitters and microlasers using chaotic waveguides Bendix, O.

36 3-6 p. 285-288
article
23 Design of InAs/Ga(In)Sb superlattices for infrared sensing Brown, G.J.

36 3-6 p. 256-259
article
24 Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment Hwang, S.H.

36 3-6 p. 203-206
article
25 Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells Croke, E.T.

36 3-6 p. 379-382
article
26 Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect Hang, D.R.

36 3-6 p. 469-471
article
27 Electroluminescence from B- and P-doped silicon nanoclusters Ovchinnikov, V.

36 3-6 p. 502-505
article
28 Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure Duque, C.A.

36 3-6 p. 231-233
article
29 Electronic transport and interfering phenomena induced by transverse electric field Pereyra, P.

36 3-6 p. 419-421
article
30 Enhanced orientation of interacting polar molecules Shima, Hiroyuki

36 3-6 p. 586-588
article
31 Epitaxial growth of non-cubic silicon Fissel, A.

36 3-6 p. 506-509
article
32 Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel Liang, C.-T.

36 3-6 p. 331-333
article
33 Excited states and infrared transition energies of a donor impurity in cylindrical GaAs–Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field Villamil, Pablo

36 3-6 p. 383-388
article
34 Experimental and theoretical studies of LiNi1/3Mn1/3M1/3O2 [M=Mo and Rh] for cathode material Singh, S.P.

36 3-6 p. 491-494
article
35 Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET Clarke, W.R.

36 3-6 p. 327-330
article
36 Formation and evolution of strain-induced self-assembled dot Hanada, Takashi

36 3-6 p. 216-218
article
37 GaN nanodot fabrication by implant source growth Buckmaster, R.

36 3-6 p. 456-459
article
38 Gated hybrid Hall effect device on silicon Das Kanungo, Pratyush

36 3-6 p. 294-297
article
39 Gaussian superlattice for phonons Villegas, Diosdado

36 3-6 p. 411-412
article
40 Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing Heng, C.L.

36 3-6 p. 531-535
article
41 Growth and characterisation of ZnO quantum dots in polyacrylamide Dantas, N.O.

36 3-6 p. 234-236
article
42 Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films Blanco, O.

36 3-6 p. 543-545
article
43 Heterojunction semiconductor triode—a new vertical device Mil'shtein, S.

36 3-6 p. 313-315
article
44 Heterostructure transistor with tunable gate bias Mil'shtein, S.

36 3-6 p. 301-303
article
45 High speed switch using pairs of pHEMTs with shifted gates Mil'shtein, S.

36 3-6 p. 316-318
article
46 Hole transport in p-channel Si MOSFETs Krishnan, Santhosh

36 3-6 p. 323-326
article
47 How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers Sukhoivanov, I.A.

36 3-6 p. 264-268
article
48 Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT Kordoš, P.

36 3-6 p. 438-441
article
49 Improved performances of 1.3μm InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition Tasco, V.

36 3-6 p. 180-182
article
50 Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices Bezerra, M.G.

36 3-6 p. 359-361
article
51 Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy Misiewicz, J.

36 3-6 p. 442-445
article
52 Jain–Kivelson-type resonance as a noninvasive probe of screening in the quantum Hall regime Nemutudi, R.

36 3-6 p. 425-427
article
53 Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110) Crespillo, M.L.

36 3-6 p. 581-585
article
54 Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures Orlov, L.K.

36 3-6 p. 518-521
article
55 Leakage current and ferroelectric memory in Nd and Sm substituted Bi4Ti3O12 films Tomar, M.S.

36 3-6 p. 574-577
article
56 Left handed composite materials in the optical range Voskoboynikov, O.

36 3-6 p. 564-566
article
57 Lithium intercalation into single-wall carbon nanotube bundles Fagan, Solange B.

36 3-6 p. 499-501
article
58 Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN Lozykowski, H.J.

36 3-6 p. 453-455
article
59 Mean life times of quasi-bound states in δ-doped GaAs quantum wells Vlaev, S.J.

36 3-6 p. 347-349
article
60 Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN Sherliker, B.

36 3-6 p. 223-226
article
61 Microwave-induced zero-resistance states on 2D electron gas: theoretical explanation and temperature dependence Iñarrea, Jesús

36 3-6 p. 334-337
article
62 ‘Mobility gap’ of a spin-split GaAs two-dimensional electron gas Huang, Tsai-Yu

36 3-6 p. 466-468
article
63 Molecular conduction using the parameter-free bond-pair model Bolcatto, P.G.

36 3-6 p. 605-607
article
64 Morphology and electrical resistivity of metallic nanostructures Camacho, Juan M.

36 3-6 p. 555-558
article
65 Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power Torchynska, T.V.

36 3-6 p. 186-189
article
66 Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities Frederick, S.

36 3-6 p. 197-199
article
67 Optical and electronic characterization of the band structure of blue methylene and rhodamine 6G-doped TiO2 sol–gel nanofilms Tomás, S.A.

36 3-6 p. 570-573
article
68 Optical and electronic properties of AlInGaN/InGaN superlattices Rodrigues, S.C.P.

36 3-6 p. 434-437
article
69 Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3μm Monte, A.F.G.

36 3-6 p. 194-196
article
70 Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5μm laser diodes Yim, J.S.

36 3-6 p. 190-193
article
71 Optical investigation of Si nano-crystals in amorphous silicon matrix Vivas Hernandez, A.

36 3-6 p. 510-513
article
72 Optical phonon modes confinement in quasiperiodic semiconductor superlattice Anselmo, D.H.A.L.

36 3-6 p. 407-410
article
73 Optical properties of colloidal nanocrystal spheres and tetrapods De Giorgi, M.

36 3-6 p. 552-554
article
74 Optical properties of porous silicon surface Chambon, E.

36 3-6 p. 514-517
article
75 Optical pulse shaping capabilities of grating-assisted codirectional couplers Azaña, José

36 3-6 p. 289-293
article
76 Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips Luo, Xiangning

36 3-6 p. 308-312
article
77 Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells Misiewicz, J.

36 3-6 p. 446-449
article
78 Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP Pettersson, H.

36 3-6 p. 227-230
article
79 Photoluminescence and Raman spectroscopy in porous SiC Torchynska, T.V.

36 3-6 p. 536-538
article
80 Photoluminescence behavior of CdSe on GaAsOx/GaAs substrates Ozasa, Kazunari

36 3-6 p. 578-580
article
81 Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance De Giorgi, M.

36 3-6 p. 200-202
article
82 Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device Kwon, O'Dae

36 3-6 p. 298-300
article
83 Preface Henini, Mohamed

36 3-6 p. 173-174
article
84 Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs–AlGaAs quantum wells Beltrán Ríos, Carlos L.

36 3-6 p. 369-373
article
85 Propagation of light in quasi-regular dielectric heterostructures with delta-like layers Mora-Ramos, M.E.

36 3-6 p. 413-415
article
86 Propagation of polaritons in coaxial multi-shell cylinders Nobre, E.F.

36 3-6 p. 589-591
article
87 Quantum capture area in layered quantum well structures Shulika, Oleksiy V.

36 3-6 p. 350-355
article
88 Quantum dot photonic devices for lightwave communication Bimberg, Dieter

36 3-6 p. 175-179
article
89 Quantum feedback of a double-dot qubit Korotkov, Alexander N.

36 3-6 p. 253-255
article
90 Quantum-size effects in SERS from noble-metal nanoparticles Pustovit, Vitaliy N.

36 3-6 p. 559-563
article
91 Realisation of ultra-low loss photonic crystal slab waveguide devices Charlton, M.D.B.

36 3-6 p. 277-281
article
92 Roughness and nanoholes in sol–gel thin films Antunes, A.

36 3-6 p. 567-569
article
93 Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication Raimundo, Daniel S.

36 3-6 p. 207-211
article
94 Self-consistent analysis of the miniband structures in superlattice quantum wires Yi, Jong Chang

36 3-6 p. 392-395
article
95 Shaping electrical field in heterostructure transistors Mil'shtein, S.

36 3-6 p. 319-322
article
96 Slow light in photonic crystals Chu, Jiun Haw

36 3-6 p. 282-284
article
97 Spin carrier dynamics under full spin–orbit coupling Marques, G.E.

36 3-6 p. 480-483
article
98 Spin ordering in chromium layered structures with inserted nonmagnetic monolayers Navarro, O.

36 3-6 p. 472-474
article
99 Spin-polarized charge fluctuations in magnetic tunneling diodes Bittencourt, A.C.

36 3-6 p. 463-465
article
100 Spin-polarized tunneling in an electromagnetic structure Seo, K.C.

36 3-6 p. 484-487
article
101 Spin relaxation due to the phonon modulation of the spin–orbit interaction in quantum dots Alcalde, A.M.

36 3-6 p. 241-243
article
102 Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures Ashok, Ashwin

36 3-6 p. 460-462
article
103 Stability issues in tunneling via quantum systems Tsu, Raphael

36 3-6 p. 212-215
article
104 Stark effect on a geometry defined by a cake's slice Reyes-Esqueda, Jorge-Alejandro

36 3-6 p. 596-598
article
105 Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning Morelhão, S.L.

36 3-6 p. 219-222
article
106 Structure and photo-induced features of TiO2 thin films prepared by RF magnetron sputtering Zhao, Xiu-Tian

36 3-6 p. 549-551
article
107 Study and development of a silicon infrared diode operating under forward bias El Tahchi, M.

36 3-6 p. 260-263
article
108 Symmetry properties and electronic band structure of ordered Zn0.5Cd0.5Se alloys Salcedo-Reyes, J.C.

36 3-6 p. 342-346
article
109 Synthesis and magnetic behavior of nanostructured ferrites for spintronics Tomar, M.S.

36 3-6 p. 475-479
article
110 Temperature dependence of the locked mode in a single-electron latch Kummamuru, Ravi K.

36 3-6 p. 304-307
article
111 The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/Al x Ga1−x as quantum dots Osório, F.A.P.

36 3-6 p. 244-246
article
112 The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques Sahiner, M. Alper

36 3-6 p. 522-526
article
113 The mechanism of interlayer exchange coupling in silicon/iron layered structures Tugushev, V.

36 3-6 p. 488-490
article
114 Thermal quenching of the self-activated band of ZnSe:Cl thin films grown by molecular beam epitaxy Martínez-Cantón, A.E.

36 3-6 p. 527-530
article
115 The superconductor proximity effect in Au–YBa2Cu3O7−δ bilayer films: the role of order parameter anisotropy Millo, O.

36 3-6 p. 539-542
article
116 Thomas–Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations Rodríguez-Vargas, I.

36 3-6 p. 404-406
article
117 Three-dimensional quantum dot array Daneshvar, K.

36 3-6 p. 250-252
article
118 Time response of a highly sensitive and tunable THz detector using the quantum hall effect Takase, Keiko

36 3-6 p. 269-271
article
119 Transport measurements on MOVPE-grown InN films Chen, Shang-Chia

36 3-6 p. 428-430
article
120 Wavelet analysis of coarsening during unstable MBE growth Moktadir, Z.

36 3-6 p. 601-604
article
                             120 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands