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                             120 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absence of Wannier–Stark ladders in finite superlattices Pereyra, P.

36 3-6 p. 401-403
artikel
2 AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices Mani, R.G.

36 3-6 p. 366-368
artikel
3 A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps Sun, G.

36 3-6 p. 183-185
artikel
4 Acoustical phonon dephasing in GaAs quantum dots Ikeda, K.

36 3-6 p. 247-249
artikel
5 AlGaAs/InGaAs PHEMT with multiple quantum wire gates Lee, Jhang W.

36 3-6 p. 389-391
artikel
6 Aluminum oxide tunnel barriers for single electron memory devices Yadavalli, Kameshwar K.

36 3-6 p. 272-276
artikel
7 Analytical model of micromachining of brittle materials with sharp particles Moktadir, Z.

36 3-6 p. 608-611
artikel
8 A new type of scanning probe microscope: combination between an electrometer and a THz microscope Kawano, Y.

36 3-6 p. 592-595
artikel
9 Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field Orlov, M.L.

36 3-6 p. 396-400
artikel
10 Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe Alfaro-Martínez, Adrián

36 3-6 p. 362-365
artikel
11 A novel chemical molecular beam deposition method for fabrication of II–VI low dimensional structures Razykov, T.M.

36 3-6 p. 599-600
artikel
12 Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy Andreev, A.

36 3-6 p. 237-240
artikel
13 Breakdown of Anderson localization in disordered quantum chains Shima, Hiroyuki

36 3-6 p. 422-424
artikel
14 Calculation of electronic properties in Al x Ga1−x delta-doped systems Gaggero-Sager, L.M.

36 3-6 p. 416-418
artikel
15 Catalytic CVD production of carbon nanotubes using ethanol Ortega-Cervantez, G.

36 3-6 p. 495-498
artikel
16 Charge buildup effects in asymmetric p-type resonant tunneling diodes Galvão Gobato, Y.

36 3-6 p. 356-358
artikel
17 Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques Prutskij, Tatiana

36 3-6 p. 374-378
artikel
18 Confinement effect on the intradonor 1s–2p+ transition energies in GaN quantum wells de Almeida, R.B.

36 3-6 p. 431-433
artikel
19 Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers Ivina, N.L.

36 3-6 p. 338-341
artikel
20 Crystal size dependence of the persistent phosphorescence in Sr2ZnSi2O7: Eu2+, Dy3+ Wang, Xiao-jun

36 3-6 p. 546-548
artikel
21 Design and simulation of a GaN/AlGaN quantum cascade laser for terahertz emission Sun, G.

36 3-6 p. 450-452
artikel
22 Design of beam splitters and microlasers using chaotic waveguides Bendix, O.

36 3-6 p. 285-288
artikel
23 Design of InAs/Ga(In)Sb superlattices for infrared sensing Brown, G.J.

36 3-6 p. 256-259
artikel
24 Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment Hwang, S.H.

36 3-6 p. 203-206
artikel
25 Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells Croke, E.T.

36 3-6 p. 379-382
artikel
26 Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect Hang, D.R.

36 3-6 p. 469-471
artikel
27 Electroluminescence from B- and P-doped silicon nanoclusters Ovchinnikov, V.

36 3-6 p. 502-505
artikel
28 Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure Duque, C.A.

36 3-6 p. 231-233
artikel
29 Electronic transport and interfering phenomena induced by transverse electric field Pereyra, P.

36 3-6 p. 419-421
artikel
30 Enhanced orientation of interacting polar molecules Shima, Hiroyuki

36 3-6 p. 586-588
artikel
31 Epitaxial growth of non-cubic silicon Fissel, A.

36 3-6 p. 506-509
artikel
32 Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel Liang, C.-T.

36 3-6 p. 331-333
artikel
33 Excited states and infrared transition energies of a donor impurity in cylindrical GaAs–Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field Villamil, Pablo

36 3-6 p. 383-388
artikel
34 Experimental and theoretical studies of LiNi1/3Mn1/3M1/3O2 [M=Mo and Rh] for cathode material Singh, S.P.

36 3-6 p. 491-494
artikel
35 Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET Clarke, W.R.

36 3-6 p. 327-330
artikel
36 Formation and evolution of strain-induced self-assembled dot Hanada, Takashi

36 3-6 p. 216-218
artikel
37 GaN nanodot fabrication by implant source growth Buckmaster, R.

36 3-6 p. 456-459
artikel
38 Gated hybrid Hall effect device on silicon Das Kanungo, Pratyush

36 3-6 p. 294-297
artikel
39 Gaussian superlattice for phonons Villegas, Diosdado

36 3-6 p. 411-412
artikel
40 Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing Heng, C.L.

36 3-6 p. 531-535
artikel
41 Growth and characterisation of ZnO quantum dots in polyacrylamide Dantas, N.O.

36 3-6 p. 234-236
artikel
42 Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films Blanco, O.

36 3-6 p. 543-545
artikel
43 Heterojunction semiconductor triode—a new vertical device Mil'shtein, S.

36 3-6 p. 313-315
artikel
44 Heterostructure transistor with tunable gate bias Mil'shtein, S.

36 3-6 p. 301-303
artikel
45 High speed switch using pairs of pHEMTs with shifted gates Mil'shtein, S.

36 3-6 p. 316-318
artikel
46 Hole transport in p-channel Si MOSFETs Krishnan, Santhosh

36 3-6 p. 323-326
artikel
47 How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers Sukhoivanov, I.A.

36 3-6 p. 264-268
artikel
48 Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT Kordoš, P.

36 3-6 p. 438-441
artikel
49 Improved performances of 1.3μm InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition Tasco, V.

36 3-6 p. 180-182
artikel
50 Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices Bezerra, M.G.

36 3-6 p. 359-361
artikel
51 Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy Misiewicz, J.

36 3-6 p. 442-445
artikel
52 Jain–Kivelson-type resonance as a noninvasive probe of screening in the quantum Hall regime Nemutudi, R.

36 3-6 p. 425-427
artikel
53 Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110) Crespillo, M.L.

36 3-6 p. 581-585
artikel
54 Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures Orlov, L.K.

36 3-6 p. 518-521
artikel
55 Leakage current and ferroelectric memory in Nd and Sm substituted Bi4Ti3O12 films Tomar, M.S.

36 3-6 p. 574-577
artikel
56 Left handed composite materials in the optical range Voskoboynikov, O.

36 3-6 p. 564-566
artikel
57 Lithium intercalation into single-wall carbon nanotube bundles Fagan, Solange B.

36 3-6 p. 499-501
artikel
58 Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN Lozykowski, H.J.

36 3-6 p. 453-455
artikel
59 Mean life times of quasi-bound states in δ-doped GaAs quantum wells Vlaev, S.J.

36 3-6 p. 347-349
artikel
60 Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN Sherliker, B.

36 3-6 p. 223-226
artikel
61 Microwave-induced zero-resistance states on 2D electron gas: theoretical explanation and temperature dependence Iñarrea, Jesús

36 3-6 p. 334-337
artikel
62 ‘Mobility gap’ of a spin-split GaAs two-dimensional electron gas Huang, Tsai-Yu

36 3-6 p. 466-468
artikel
63 Molecular conduction using the parameter-free bond-pair model Bolcatto, P.G.

36 3-6 p. 605-607
artikel
64 Morphology and electrical resistivity of metallic nanostructures Camacho, Juan M.

36 3-6 p. 555-558
artikel
65 Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power Torchynska, T.V.

36 3-6 p. 186-189
artikel
66 Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities Frederick, S.

36 3-6 p. 197-199
artikel
67 Optical and electronic characterization of the band structure of blue methylene and rhodamine 6G-doped TiO2 sol–gel nanofilms Tomás, S.A.

36 3-6 p. 570-573
artikel
68 Optical and electronic properties of AlInGaN/InGaN superlattices Rodrigues, S.C.P.

36 3-6 p. 434-437
artikel
69 Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3μm Monte, A.F.G.

36 3-6 p. 194-196
artikel
70 Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5μm laser diodes Yim, J.S.

36 3-6 p. 190-193
artikel
71 Optical investigation of Si nano-crystals in amorphous silicon matrix Vivas Hernandez, A.

36 3-6 p. 510-513
artikel
72 Optical phonon modes confinement in quasiperiodic semiconductor superlattice Anselmo, D.H.A.L.

36 3-6 p. 407-410
artikel
73 Optical properties of colloidal nanocrystal spheres and tetrapods De Giorgi, M.

36 3-6 p. 552-554
artikel
74 Optical properties of porous silicon surface Chambon, E.

36 3-6 p. 514-517
artikel
75 Optical pulse shaping capabilities of grating-assisted codirectional couplers Azaña, José

36 3-6 p. 289-293
artikel
76 Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips Luo, Xiangning

36 3-6 p. 308-312
artikel
77 Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells Misiewicz, J.

36 3-6 p. 446-449
artikel
78 Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP Pettersson, H.

36 3-6 p. 227-230
artikel
79 Photoluminescence and Raman spectroscopy in porous SiC Torchynska, T.V.

36 3-6 p. 536-538
artikel
80 Photoluminescence behavior of CdSe on GaAsOx/GaAs substrates Ozasa, Kazunari

36 3-6 p. 578-580
artikel
81 Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance De Giorgi, M.

36 3-6 p. 200-202
artikel
82 Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device Kwon, O'Dae

36 3-6 p. 298-300
artikel
83 Preface Henini, Mohamed

36 3-6 p. 173-174
artikel
84 Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs–AlGaAs quantum wells Beltrán Ríos, Carlos L.

36 3-6 p. 369-373
artikel
85 Propagation of light in quasi-regular dielectric heterostructures with delta-like layers Mora-Ramos, M.E.

36 3-6 p. 413-415
artikel
86 Propagation of polaritons in coaxial multi-shell cylinders Nobre, E.F.

36 3-6 p. 589-591
artikel
87 Quantum capture area in layered quantum well structures Shulika, Oleksiy V.

36 3-6 p. 350-355
artikel
88 Quantum dot photonic devices for lightwave communication Bimberg, Dieter

36 3-6 p. 175-179
artikel
89 Quantum feedback of a double-dot qubit Korotkov, Alexander N.

36 3-6 p. 253-255
artikel
90 Quantum-size effects in SERS from noble-metal nanoparticles Pustovit, Vitaliy N.

36 3-6 p. 559-563
artikel
91 Realisation of ultra-low loss photonic crystal slab waveguide devices Charlton, M.D.B.

36 3-6 p. 277-281
artikel
92 Roughness and nanoholes in sol–gel thin films Antunes, A.

36 3-6 p. 567-569
artikel
93 Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication Raimundo, Daniel S.

36 3-6 p. 207-211
artikel
94 Self-consistent analysis of the miniband structures in superlattice quantum wires Yi, Jong Chang

36 3-6 p. 392-395
artikel
95 Shaping electrical field in heterostructure transistors Mil'shtein, S.

36 3-6 p. 319-322
artikel
96 Slow light in photonic crystals Chu, Jiun Haw

36 3-6 p. 282-284
artikel
97 Spin carrier dynamics under full spin–orbit coupling Marques, G.E.

36 3-6 p. 480-483
artikel
98 Spin ordering in chromium layered structures with inserted nonmagnetic monolayers Navarro, O.

36 3-6 p. 472-474
artikel
99 Spin-polarized charge fluctuations in magnetic tunneling diodes Bittencourt, A.C.

36 3-6 p. 463-465
artikel
100 Spin-polarized tunneling in an electromagnetic structure Seo, K.C.

36 3-6 p. 484-487
artikel
101 Spin relaxation due to the phonon modulation of the spin–orbit interaction in quantum dots Alcalde, A.M.

36 3-6 p. 241-243
artikel
102 Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures Ashok, Ashwin

36 3-6 p. 460-462
artikel
103 Stability issues in tunneling via quantum systems Tsu, Raphael

36 3-6 p. 212-215
artikel
104 Stark effect on a geometry defined by a cake's slice Reyes-Esqueda, Jorge-Alejandro

36 3-6 p. 596-598
artikel
105 Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning Morelhão, S.L.

36 3-6 p. 219-222
artikel
106 Structure and photo-induced features of TiO2 thin films prepared by RF magnetron sputtering Zhao, Xiu-Tian

36 3-6 p. 549-551
artikel
107 Study and development of a silicon infrared diode operating under forward bias El Tahchi, M.

36 3-6 p. 260-263
artikel
108 Symmetry properties and electronic band structure of ordered Zn0.5Cd0.5Se alloys Salcedo-Reyes, J.C.

36 3-6 p. 342-346
artikel
109 Synthesis and magnetic behavior of nanostructured ferrites for spintronics Tomar, M.S.

36 3-6 p. 475-479
artikel
110 Temperature dependence of the locked mode in a single-electron latch Kummamuru, Ravi K.

36 3-6 p. 304-307
artikel
111 The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/Al x Ga1−x as quantum dots Osório, F.A.P.

36 3-6 p. 244-246
artikel
112 The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques Sahiner, M. Alper

36 3-6 p. 522-526
artikel
113 The mechanism of interlayer exchange coupling in silicon/iron layered structures Tugushev, V.

36 3-6 p. 488-490
artikel
114 Thermal quenching of the self-activated band of ZnSe:Cl thin films grown by molecular beam epitaxy Martínez-Cantón, A.E.

36 3-6 p. 527-530
artikel
115 The superconductor proximity effect in Au–YBa2Cu3O7−δ bilayer films: the role of order parameter anisotropy Millo, O.

36 3-6 p. 539-542
artikel
116 Thomas–Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations Rodríguez-Vargas, I.

36 3-6 p. 404-406
artikel
117 Three-dimensional quantum dot array Daneshvar, K.

36 3-6 p. 250-252
artikel
118 Time response of a highly sensitive and tunable THz detector using the quantum hall effect Takase, Keiko

36 3-6 p. 269-271
artikel
119 Transport measurements on MOVPE-grown InN films Chen, Shang-Chia

36 3-6 p. 428-430
artikel
120 Wavelet analysis of coarsening during unstable MBE growth Moktadir, Z.

36 3-6 p. 601-604
artikel
                             120 gevonden resultaten
 
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